绝缘体上的锗硅技术(SiGe on Insulator,SGOI)和以它为衬底开发的应变硅技术 (Strained Silicon on Insulator,sSOI)融合了SiGe技术和SOI技术二者的优点,是近年来人们广泛 重视的研究热点和硅基集成电路产业进一步发展的重要研究方向,...绝缘体上的锗硅技术(SiGe on Insulator,SGOI)和以它为衬底开发的应变硅技术 (Strained Silicon on Insulator,sSOI)融合了SiGe技术和SOI技术二者的优点,是近年来人们广泛 重视的研究热点和硅基集成电路产业进一步发展的重要研究方向,是国际半导体技术发展路线图 (ITRS)中CMOS技术今后几年发展的方向。文章综述了SGOI薄膜的多种制备方法和最新研究进 展。展开更多
To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator（SGOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs）,this paper proposes a novel device called double step b...To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator（SGOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs）,this paper proposes a novel device called double step buried oxide（BOX） SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from phonon boundary scattering is considered.A comparative study of SGOI nMOSFETs with different BOX thicknesses under channel and different channel strains has been performed.By reducing moderately the BOX thickness under the channel,the channel temperature caused by the self-heating effect can be effectively reduced.Moreover,mobility degradation,off state current and a short-channel effect such as drain induced barrier lowering can be well suppressed.Therefore,SGOI MOSFETs with a thinner BOX under the channel can improve the overall performance and long-term reliability efficiently.展开更多
Ge condensation process of a sandwiched structure of Si/SiGe/Si on silicon-on-insulator （SOI） to form SiGe-on- insulator （SGOI） substrate is investigated. The non-homogeneity of SiGe on insulator is observed after...Ge condensation process of a sandwiched structure of Si/SiGe/Si on silicon-on-insulator （SOI） to form SiGe-on- insulator （SGOI） substrate is investigated. The non-homogeneity of SiGe on insulator is observed after a long time oxidation and annealing due to an increased consumption of silicon at the inflection points of the corrugated SiGe film morphology, which happens in the case of the rough surface morphology, with lateral Si atoms diffusing to the inflection points of the corrugated SiGe film. The transmission electron microscopy measurements show that the non-homogeneous SiGe layer exhibits a single crystalline nature with perfect atom lattice. Possible formation mechanism of the non-homogeneity SiGe layer is presented by discussing the highly nonuniform oxidation rate that is spatially dependent in the Ge condensation process. The results are of guiding significance for fabricating the SGOI by Ge condensation process.展开更多
SiGe-on-Insulator (SGOI) is an ideal substrate material for realizing strained-silicon structures that are very competing and popular in present silicon technology. In this paper, two methods are proposed to fabricate...SiGe-on-Insulator (SGOI) is an ideal substrate material for realizing strained-silicon structures that are very competing and popular in present silicon technology. In this paper, two methods are proposed to fabricate SGOI novel structure. One is modified Separation by Implantation of Oxygen (SIMOX) starting from pseuodomorphic SiGe thin film without graded SiGe buffer layer. Results show that two-step annealing can improve the cystallinity quality of SiGe and block the Ge diffusion in high temperature annealing. SGOI structure with good quality has been obtained through two-step annealing. The second method is proposed to achieve SGOI with high content of Ge. High quality strained relax SiGe is grown on a compliant silicon-on-insulator (SOI) substrate by UHCVD firstly. During high temperature oxidation,Ge atoms diffuse into the top Si layer of SOI. We successfully obtain SGOI with the Ge content of 38%, which is available for the growth of strained Si.展开更多
文摘绝缘体上的锗硅技术(SiGe on Insulator,SGOI)和以它为衬底开发的应变硅技术 (Strained Silicon on Insulator,sSOI)融合了SiGe技术和SOI技术二者的优点,是近年来人们广泛 重视的研究热点和硅基集成电路产业进一步发展的重要研究方向,是国际半导体技术发展路线图 (ITRS)中CMOS技术今后几年发展的方向。文章综述了SGOI薄膜的多种制备方法和最新研究进 展。
基金Project supported by the National Natural Science Foundation of China(Nos.60976068,60936005)the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708083)the Specialized Research Fund for the Doctoral Program of Higher Education,China(No.200807010010)
文摘To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator（SGOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs）,this paper proposes a novel device called double step buried oxide（BOX） SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from phonon boundary scattering is considered.A comparative study of SGOI nMOSFETs with different BOX thicknesses under channel and different channel strains has been performed.By reducing moderately the BOX thickness under the channel,the channel temperature caused by the self-heating effect can be effectively reduced.Moreover,mobility degradation,off state current and a short-channel effect such as drain induced barrier lowering can be well suppressed.Therefore,SGOI MOSFETs with a thinner BOX under the channel can improve the overall performance and long-term reliability efficiently.
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2012CB933503 and 2013CB632103)the National Natural Science Foundation of China(Grant Nos.61176092,61036003,and 60837001)+1 种基金the Ph.D.Programs Foundation of Ministry of Education of China(Grant No.20110121110025)the Fundamental Research Funds for the Central Universities,China(Grant No.2010121056)
文摘Ge condensation process of a sandwiched structure of Si/SiGe/Si on silicon-on-insulator （SOI） to form SiGe-on- insulator （SGOI） substrate is investigated. The non-homogeneity of SiGe on insulator is observed after a long time oxidation and annealing due to an increased consumption of silicon at the inflection points of the corrugated SiGe film morphology, which happens in the case of the rough surface morphology, with lateral Si atoms diffusing to the inflection points of the corrugated SiGe film. The transmission electron microscopy measurements show that the non-homogeneous SiGe layer exhibits a single crystalline nature with perfect atom lattice. Possible formation mechanism of the non-homogeneity SiGe layer is presented by discussing the highly nonuniform oxidation rate that is spatially dependent in the Ge condensation process. The results are of guiding significance for fabricating the SGOI by Ge condensation process.
基金Project supported by the Special Funds for Major State Basic Research Projects (G20000365) The National Natural Science Foundation of China under (60201004, 90101012) and the Shanghai Special Foundation for Nanotechnology Project (0252nm084 and 0359nm204)
文摘SiGe-on-Insulator (SGOI) is an ideal substrate material for realizing strained-silicon structures that are very competing and popular in present silicon technology. In this paper, two methods are proposed to fabricate SGOI novel structure. One is modified Separation by Implantation of Oxygen (SIMOX) starting from pseuodomorphic SiGe thin film without graded SiGe buffer layer. Results show that two-step annealing can improve the cystallinity quality of SiGe and block the Ge diffusion in high temperature annealing. SGOI structure with good quality has been obtained through two-step annealing. The second method is proposed to achieve SGOI with high content of Ge. High quality strained relax SiGe is grown on a compliant silicon-on-insulator (SOI) substrate by UHCVD firstly. During high temperature oxidation,Ge atoms diffuse into the top Si layer of SOI. We successfully obtain SGOI with the Ge content of 38%, which is available for the growth of strained Si.
