Urolithiasis is a common condition that affects 5%-10%of the population globally[1].Once afflicted,urolithiasis tends to be recurrent,with up to 50%in most cases in 5 years since the first stone event[2].Despite the s...Urolithiasis is a common condition that affects 5%-10%of the population globally[1].Once afflicted,urolithiasis tends to be recurrent,with up to 50%in most cases in 5 years since the first stone event[2].Despite the significant progress in understanding the pathogenesis and management of urolithiasis,the condition remains a significant public health concern.The aim of this special issue of the Asian Journal of Urology was to provide an update on the current state of knowledge regarding the pathogenesis,diagnosis,and management of urolithiasis.展开更多
A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VD...A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.展开更多
针对某电子特种气体生产装置中的蒸馏罐SIS控制方案存在的问题进行了改进和优化,以横河DCS CENTUM VP和横河SIS Prosafe-RS为对象,在DCS与SIS之间建立了临时通讯的安全临时措施,并分析了一些技术要点、难点及解决方案,进而降低了SIS误...针对某电子特种气体生产装置中的蒸馏罐SIS控制方案存在的问题进行了改进和优化,以横河DCS CENTUM VP和横河SIS Prosafe-RS为对象,在DCS与SIS之间建立了临时通讯的安全临时措施,并分析了一些技术要点、难点及解决方案,进而降低了SIS误操作急停及开停车频繁导致生产装置使用效率低等问题,保障了装置生产安全稳定运行和装置的生产效率。展开更多
文摘Urolithiasis is a common condition that affects 5%-10%of the population globally[1].Once afflicted,urolithiasis tends to be recurrent,with up to 50%in most cases in 5 years since the first stone event[2].Despite the significant progress in understanding the pathogenesis and management of urolithiasis,the condition remains a significant public health concern.The aim of this special issue of the Asian Journal of Urology was to provide an update on the current state of knowledge regarding the pathogenesis,diagnosis,and management of urolithiasis.
基金Supported by National Natural Science Foundation of China(11925304,12020101002,11903086,11903087,11973095)Foundation of the Chinese Academy of Sciences(QYZDJ-SSW-SLH043,GJJSTD20210002)。
基金Project supported in part by the Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017)111 Project(Grant No.B12026)。
文摘A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.
文摘针对某电子特种气体生产装置中的蒸馏罐SIS控制方案存在的问题进行了改进和优化,以横河DCS CENTUM VP和横河SIS Prosafe-RS为对象,在DCS与SIS之间建立了临时通讯的安全临时措施,并分析了一些技术要点、难点及解决方案,进而降低了SIS误操作急停及开停车频繁导致生产装置使用效率低等问题,保障了装置生产安全稳定运行和装置的生产效率。
