A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microsco...A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microscopy (XTEM), while the electrical properties were studied by the spreading resistance profile (SRP). Experimental results demonstrate that both structural and electrical properties of the SOI structure are very good.展开更多
The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics(MD) simulations.This work focuses on the effects of the implantation energy,dose of hydrogen ...The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics(MD) simulations.This work focuses on the effects of the implantation energy,dose of hydrogen ions and implantation temperature on the distribution of hydrogen ions and defect rate induced by ion implantation.Numerical analysis shows that implanted hydrogen ions follow an approximate Gaussian distribution which mainly depends on the implantation energy and is independent of the hydrogen ion dose and implantation temperature.By introducing a new parameter of defect rate,the influence of the processing parameters on defect rate is also quantitatively examined.展开更多
Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based...Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based on statistical average, this work aims to quantitatively examine defect nucleation and growth at nanoscale during annealing in Smart-Cut~ technology. Research focus is put on the effects of the implantation energy, hydrogen implantation dose and annealing temperature on defect density in the statistical region. It is found that most defects nucleate and grow at the annealing stage, and that defect density increases with the increase of the annealing temperature and the decrease of the hydrogen implantation dose. In addition, the enhancement and the impediment effects of stress field on defect density in the annealing process are discussed.展开更多
基金supported by the Australian Research Council (ARC), the National Natural Science Foundation of China (10525210 and 10732050) 973 Project (2004CB619303)
基金Supported by the National Natural Science Foundation of China(No.69906005)and the Shanghai Youth Foundation(No.01 QMH1403)
文摘A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microscopy (XTEM), while the electrical properties were studied by the spreading resistance profile (SRP). Experimental results demonstrate that both structural and electrical properties of the SOI structure are very good.
基金Project supported by the National Natural Science Foundation of China(No.11372261)the Excellent Young Scientists Supporting Project of Science and Technology Department of Sichuan Province(No.2013JQ0030)+3 种基金the Supporting Project of Department of Education of Sichuan Province(No.2014zd3132)the Opening Project of Key Laboratory of Testing Technology for Manufacturing Process,Southwest University of Science and Technology-Ministry of Education(No.12zxzk02)the Fund of Doctoral Research of Southwest University of Science and Technology(No.12zx7106)the Postgraduate Innovation Fund Project of Southwest University of Science and Technology(No.14ycxjj0121)
文摘The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics(MD) simulations.This work focuses on the effects of the implantation energy,dose of hydrogen ions and implantation temperature on the distribution of hydrogen ions and defect rate induced by ion implantation.Numerical analysis shows that implanted hydrogen ions follow an approximate Gaussian distribution which mainly depends on the implantation energy and is independent of the hydrogen ion dose and implantation temperature.By introducing a new parameter of defect rate,the influence of the processing parameters on defect rate is also quantitatively examined.
基金Project supported by the National Natural Science Foundation of China(No.11372261)the Excellent Young Scientists Supporting Project of Science and Technology Department of Sichuan Province(No.2013JQ0030)+3 种基金the Supporting Project of Department of Education of Sichuan Province(No.2014zd3132)the Opening Project of Key Laboratory of Testing Technology for Manufacturing Process,Southwest University of Science and Technology-Ministry of Education(No.12zxzk02)the Fund of Doctoral Research of Southwest University of Science and Technology(No.12zx7106)the Postgraduate Innovation Fund Project of Southwest University of Science and Technology(No.14ycxjj0121)
文摘Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based on statistical average, this work aims to quantitatively examine defect nucleation and growth at nanoscale during annealing in Smart-Cut~ technology. Research focus is put on the effects of the implantation energy, hydrogen implantation dose and annealing temperature on defect density in the statistical region. It is found that most defects nucleate and grow at the annealing stage, and that defect density increases with the increase of the annealing temperature and the decrease of the hydrogen implantation dose. In addition, the enhancement and the impediment effects of stress field on defect density in the annealing process are discussed.
