局部放电是电力变压器绝缘劣化的主要原因,研究局部放电定位对提高电网的安全运行很有帮助。该文研制了一种用于电力变压器局部放电定位的复合传感器,并针对该传感器进行了定位仿真和实验。复合传感器由共形的13阵元十字形超声波传感器...局部放电是电力变压器绝缘劣化的主要原因,研究局部放电定位对提高电网的安全运行很有帮助。该文研制了一种用于电力变压器局部放电定位的复合传感器,并针对该传感器进行了定位仿真和实验。复合传感器由共形的13阵元十字形超声波传感器阵列和22阵元的超高频传感器阵列组成。应用高阶累积量处理技术对十字形超声阵列进行虚拟扩展,扩展后阵列具有61个阵元的阵列性能,提高了超声阵列的孔径和方向性锐度,这极大减少了后续硬件电路和成本。利用扩展超声阵列配合超高频阵列来仿真局部放电定位,结果表明扩展阵列具有很好的定位效果。在噪声背景下与多重信号分类(multiple signal classification,MUSIC)方法作了比较,结果表明高阶累积量处理技术能更好地抑制各种高斯色噪声的干扰。基于该十字形超声波阵列传感器进行了局部放电定位实验,结果表明扩展后的十字形超声阵列能精确地定位局部放电,定位的相对误差小于5%。对较少数目阵元的阵列实施虚拟扩展技术,为阵列技术在电力设备上的实用化提供了可能性。展开更多
A novel capacitive pressure sensor is presented, whose sensing structure is a solid-state capacitor consisting of three square membranes with Al/SiO2/n-type silicon. It was fabricated using pn junction self-stop etchi...A novel capacitive pressure sensor is presented, whose sensing structure is a solid-state capacitor consisting of three square membranes with Al/SiO2/n-type silicon. It was fabricated using pn junction self-stop etching combined with adhesive bonding,and only three masks were used during the process. Sensors with side lengths of 1000,1200,and 1400μm were fabricated,showing sensitivity of 1.8,2.3, and 3.6fF/hPa over the range of 410～ 1010hPa, respectively. The sensi- tivity of the sensor with a side length of 1500μm is 4. 6fF/hPa,the nonlinearity is 6. 4% ,and the max hysteresis is 3.6%. The results show that permittivity change plays an important part in the capacitance change.展开更多
文摘局部放电是电力变压器绝缘劣化的主要原因,研究局部放电定位对提高电网的安全运行很有帮助。该文研制了一种用于电力变压器局部放电定位的复合传感器,并针对该传感器进行了定位仿真和实验。复合传感器由共形的13阵元十字形超声波传感器阵列和22阵元的超高频传感器阵列组成。应用高阶累积量处理技术对十字形超声阵列进行虚拟扩展,扩展后阵列具有61个阵元的阵列性能,提高了超声阵列的孔径和方向性锐度,这极大减少了后续硬件电路和成本。利用扩展超声阵列配合超高频阵列来仿真局部放电定位,结果表明扩展阵列具有很好的定位效果。在噪声背景下与多重信号分类(multiple signal classification,MUSIC)方法作了比较,结果表明高阶累积量处理技术能更好地抑制各种高斯色噪声的干扰。基于该十字形超声波阵列传感器进行了局部放电定位实验,结果表明扩展后的十字形超声阵列能精确地定位局部放电,定位的相对误差小于5%。对较少数目阵元的阵列实施虚拟扩展技术,为阵列技术在电力设备上的实用化提供了可能性。
文摘A novel capacitive pressure sensor is presented, whose sensing structure is a solid-state capacitor consisting of three square membranes with Al/SiO2/n-type silicon. It was fabricated using pn junction self-stop etching combined with adhesive bonding,and only three masks were used during the process. Sensors with side lengths of 1000,1200,and 1400μm were fabricated,showing sensitivity of 1.8,2.3, and 3.6fF/hPa over the range of 410～ 1010hPa, respectively. The sensi- tivity of the sensor with a side length of 1500μm is 4. 6fF/hPa,the nonlinearity is 6. 4% ,and the max hysteresis is 3.6%. The results show that permittivity change plays an important part in the capacitance change.
