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Molecular Dynamics Study of Effects of Si-Doping Upon Structure and Mechanical Properties of Carbon Nanotube 被引量:1
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作者 SONG Hai-Yang SUN He-Ming ZHANG Guo-Xiang 《Communications in Theoretical Physics》 SCIE CAS CSCD 2006年第4期741-744,共4页
In this paper, a Si-doped single-walled carbon nanotube (SWCNT) (7,7) and several perfect armchair SWCNTs are investigated using the classical molecular dynamics simulations method. The inter-atomic short-range in... In this paper, a Si-doped single-walled carbon nanotube (SWCNT) (7,7) and several perfect armchair SWCNTs are investigated using the classical molecular dynamics simulations method. The inter-atomic short-range interaction is represented by empirical Tersoff bond order potential. The computational results show that the axial Young's modulus of the perfect SWCNTs are in the range of 1.099 ± 0.005 TPa, which is in good agreement with the existing experimental results. From our simulation, the Si-doping decreases the Young's modulus of SWCNT, and with the increased strain levels, the effect of Si-doped layer in enhancing the local stress level increases. The Young's modulus of armchair SWCNTs are weakly affected by tube radius. 展开更多
关键词 molecular dynamics simulation carbon nanotubes Young's modulus si-doping
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The Effect of Si-Doping on the Release of Antibiotic from Hydroxyapatite Coatings
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作者 Mirjam Lilja Carl Lindahl +2 位作者 Wei Xia Hakan Engqvist Maria Stromme 《Journal of Biomaterials and Nanobiotechnology》 2013年第3期237-241,共5页
Herein, we show that incorporation of ions during biomimetic coating deposition may be utilized to tailor the drug loading capacity of hydroxyapatite (HA) coatings. Pure biomimetic HA (HA-B) and Si-doped equivalents (... Herein, we show that incorporation of ions during biomimetic coating deposition may be utilized to tailor the drug loading capacity of hydroxyapatite (HA) coatings. Pure biomimetic HA (HA-B) and Si-doped equivalents (SiHA-B) where deposited by a biomimetic process onto titanium dioxide covered titanium substrates. The antibiotic Cephalothin was incorporated into the coatings by adsorptive loading and the release was studied in-vitro. SiHA-B coatings exhibited superior drug incorporation capacity compared to pure HA-B coatings, resulting in a drug release profile dominated by an initial 10 min burst effect while a more prolonged 10 hour release was observed from HA-B coatings. The results emphasize the possibility to impact the drug release kinetics from implant coatings by selective doping elements and the use of thin, biomimetic HA-coatings as drug delivery vehicles. Functionalizing metal implants with SiHA-B coatings presents an interesting strategy towards creating synergetic effects through ion- and antibiotic release and, hence, contributing both towards preventing post-surgical infections while at the same time enhancing the bone-bonding ability. 展开更多
关键词 Titanium Dioxide HYDROXYAPATITE CEPHALOTHIN Drug Release si-doping
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Homoepitaxial growth of (100) Si-doped β-Ga_(2)O_(3) films via MOCVD
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作者 Wenbo Tang Xueli Han +11 位作者 Xiaodong Zhang Botong Li Yongjian Ma Li Zhang Tiwei Chen Xin Zhou Chunxu Bian Yu Hu Duanyang Chen Hongji Qi Zhongming Zeng Baoshun Zhang 《Journal of Semiconductors》 EI CAS CSCD 2023年第6期39-45,共7页
Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth ... Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in(100) β-Ga_(2)O_(3) films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped β-Ga_(2)O_(3) film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the(400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance–voltage characteristics, the effective net doping concentrations of the films are 5.41 × 10~(15) – 1.74 × 10~(20) cm~(-3). Hall measurements demonstrate a high electron mobility value of 51cm~2/(V·s), corresponding to a carrier concentration of 7.19 × 10~(18) cm~(-3) and a high activation efficiency of up to 61.5%. Transmission line model(TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 × 10~(-4) Ω·cm~2 for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 × 10~(19) cm~(-3), confirming the effective Si doing in the MOCVD epitaxy. 展开更多
关键词 homoepitaxial growth MOCVD si-doping films high activation efficiency Ohmic contacts
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Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane 被引量:3
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作者 Ying-Hui Zhong Bo Yang +7 位作者 Ming-Ming Chang Peng Ding Liu-Hong Ma Meng-Ke Li Zhi-Yong Duan Jie Yang Zhi Jin Zhi-Chao Wei 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第3期455-459,共5页
An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotio... An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects. 展开更多
关键词 InP-based HEMT ANTI-RADIATION proton irradiation si-doped PLANE
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High-responsivity solar-blind photodetector based on MOCVD-grown Si-dopedβ-Ga_(2)O_(3)thin film 被引量:2
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作者 Yu-Song Zhi Wei-Yu Jiang +9 位作者 Zeng Liu Yuan-Yuan Liu Xu-Long Chu Jia-Hang Liu Shan Li Zu-Yong Yan Yue-Hui Wang Pei-Gang Li Zhen-Ping Wu Wei-Hua Tang 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第5期595-601,共7页
Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photo... Si-dopedβ-Ga_(2)O_(3)films are fabricated through metal-organic chemical vapor deposition(MOCVD).Solar-blind ultraviolet(UV)photodetector(PD)based on the films is fabricated by standard photolithography,and the photodetection properties are investigated.The results show that the photocurrent increases to 11.2 mA under 200μW·cm^(-2)254 nm illumination and±20 V bias,leading to photo-responsivity as high as 788 A·W^(-1).The Si-dopedβ-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance. 展开更多
关键词 si-dopedβ-Ga_(2)O_(3) metal-organic chemical vapor deposition(MOCVD) solar-blind high responsivity
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Residual Strain and Electronic Characteristics of Si-doped GaN
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作者 LI Chao ZHOU Xun +8 位作者 ZOU Ze-ya DU Jiang-feng JI Hong YANG Mo-hua ZHAO Hong ZHAO Jin-xia ZHU Yah-ling YU Zhi-wei YU Qi 《Semiconductor Photonics and Technology》 CAS 2008年第2期80-84,共5页
The residual strain and the damage induced by Si implantation in GaN samples have been studied, as well as the electronic characteristics. These as-grown samples are implanted with different doses of Si(1 × 10^1... The residual strain and the damage induced by Si implantation in GaN samples have been studied, as well as the electronic characteristics. These as-grown samples are implanted with different doses of Si(1 × 10^14 cm^-2, 1×10^15 cm^-2 or ] × 10^16 cm^-2, ]00 keV) and following annealed by rapid thermal anneal(RTA) at 1 000℃ or 1 100℃ for 60 s. High resolution X-ray diffractometer(HRXRD) measurement reveals that the damage peak induced by the implantation appears and increases with the rise of the impurity dose, expanding the crystal lattice. The absolute value of biaxial strain decreases with the increase of the annealing temperature for the same sample. RT-Hall test reveals that the sample annealed at 1 100℃ acquires higher mobility and higher carrier density than that annealed at 1 000 ℃, which reflects that the residual strain(or residual stress) is the main scattering factor. And the sample C3(1 × 10^16 cm^-2 and annealed at 1100 ℃) acquires the best electronic characteristic with the carrier density of 3.25 × 10^19 cm^-3 and the carrier mobility of 31 cm2/(V·S). 展开更多
关键词 residual strain ANNEAL si-doped GaN XRD
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Electronic structures and optical properties of Si-and Sn-doped β-Ga_2O_3: A GGA+U study 被引量:2
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作者 Jun-Ning Dang Shu-wen Zheng +1 位作者 Lang Chen Tao Zheng 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第1期502-510,共9页
The electronic structures and optical properties of β-Ga_2O_3 and Si-and Sn-doped β-Ga_2O_3 are studied using the GGA + U method based on density functional theory. The calculated bandgap and Ga 3d-state peak of β-... The electronic structures and optical properties of β-Ga_2O_3 and Si-and Sn-doped β-Ga_2O_3 are studied using the GGA + U method based on density functional theory. The calculated bandgap and Ga 3d-state peak of β-Ga_2O_3 are in good agreement with experimental results. Si-and Sn-doped β-Ga_2O_3 tend to form under O-poor conditions, and the formation energy of Si-doped β-Ga_2O_3 is larger than that of Sn-doped β-Ga_2O_3 because of the large bond length variation between Ga–O and Si–O. Si-and Sn-doped β-Ga_2O_3 have wider optical gaps than β-Ga_2O_3, due to the Burstein–Moss effect and the bandgap renormalization effect. Si-doped β-Ga_2O_3 shows better electron conductivity and a higher optical absorption edge than Sn-doped β-Ga_2O_3, so Si is more suitable as a dopant of n-type β-Ga_2O_3, which can be applied in deep-UV photoelectric devices. 展开更多
关键词 density functional theory GGA + U method si-doped β-Ga2O3 Sn-doped β-Ga2O3 electronic structure OPTICAL property
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Formation of Al-Si Composite Oxide Film by Hydrolysis Precipitation and Anodizing
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作者 Zhe-Sheng Feng Ying-Jie Xia Jia Ding Jin-Ju Chen 《Journal of Electronic Science and Technology of China》 2007年第4期289-292,共4页
This paper presents a new technique in the high dielectric constant composite oxide film preparation. On the basis of nano-compsite high dielectric constant aluminum oxide fdm growth technology, a new idea of adultera... This paper presents a new technique in the high dielectric constant composite oxide film preparation. On the basis of nano-compsite high dielectric constant aluminum oxide fdm growth technology, a new idea of adulterating Si oxide species into the aluminum composite film was proposed. As a result, the specific capacitance and withstanding voltage of the composite oxide film formed at the anodizing voltage of 20V are enhanced, and the leakage current of the aluminum composite oxide fdm is reduced through incorporation of Si oxide species. 展开更多
关键词 Aluminum electric foil si-doped specific capacitance withstanding voltage.
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Promotional effect of Si-doped V_2O_5/TiO_2 for selective catalytic reduction of NOx by NH_3 被引量:13
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作者 Yanxiao Pan Wei Zhao +2 位作者 Qin Zhong Wei Cai Hongyu Li 《Journal of Environmental Sciences》 SCIE EI CAS CSCD 2013年第8期1703-1711,共9页
TiO2 supports doped with different amounts of Si were prepared by a sol-gel method, and 1 wt% vanadia (V2O5) loaded on Si-doped TiO2 was obtained by an impregnation method. The mole ratio of Si/Ti was 0.2, NOx conve... TiO2 supports doped with different amounts of Si were prepared by a sol-gel method, and 1 wt% vanadia (V2O5) loaded on Si-doped TiO2 was obtained by an impregnation method. The mole ratio of Si/Ti was 0.2, NOx conversion exceeds 94% at 300℃ and GHSV of 41,324 hr-1 , which is about 20% higher than pure V2O5/TiO2 . The catalysts were characterized by XRD, BET, TEM, FT-IR, NH3-TPD, XPS, H2-TPR, Raman and in situ DRIFTS. The results of FT-IR and XPS indicated that Si was doped into the TiO2 lattice successfully and a solid solution was obtained. V2O5 active component could be dispersed well on the support with the increasing of surface area of the catalyst, which was confirmed by Raman and XRD results. Above all, the numbers of acid sites (especially the Br nsted-acid) and oxidation properties were enhanced for Si-doped V2O5/TiO2 catalysts, which improved the deNOx catalytic activity. 展开更多
关键词 si-doped V2O5/TiO2 SCR Si-O-Ti VOx species
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Stress,structural and electrical properties of Si-doped GaN film grown by MOCVD
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作者 许志豪 张进成 +4 位作者 段焕涛 张忠芬 朱庆玮 徐浩 郝跃 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第12期13-17,共5页
The stresses, structural and electrical properties of n-type Si-doped GaN films grown by metaiorganic chemical vapor deposition (MOCVD) are systemically studied. It is suggested that the main stress relaxation is in... The stresses, structural and electrical properties of n-type Si-doped GaN films grown by metaiorganic chemical vapor deposition (MOCVD) are systemically studied. It is suggested that the main stress relaxation is induced by bending dislocations in low doping samples. But for higher doping samples, as the Si doping concentration increases, the in-plane stresses in the grown films are quickly relaxed due to the rapid increase of the edge dislocation densities. Hall effect measurements reveal that the carrier mobility first increases rapidly and then decreases with increasing Si doping concentration. This phenomenon is attributed to the interaction between various scattering process. It is suggested that the dominant scattering process is defect scattering for low doping samples and ionized impurity scattering for high doping samples. 展开更多
关键词 si-doped GaN stress relaxation DEFECT electrical properties
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