SiGe-based thermoelectric(TE)materials have gained increasing interests due to their low maintenance costs,environmental friendliness and long lifespan.However,the intrinsically high thermal conductivity of Si-based m...SiGe-based thermoelectric(TE)materials have gained increasing interests due to their low maintenance costs,environmental friendliness and long lifespan.However,the intrinsically high thermal conductivity of Si-based materials also results in poor TE properties.In this investigation,a zirconia(ZrO_(2))composite strategy was applied to an n-type SiGe alloy,tremendously elevating its TE performance.After mechanical alloying and spark plasma sintering(SPS)processes,the ZrO_(2)induced the formation of nanopores in the SiGe matrix via phosphorus adsorption.Moreover,such increase in porosity enhanced the phonon scattering and dramatically suppressed lattice thermal conductivity,from 2.83 to 1.59 W·m^(-1)·K^(-1)at 873 K.Additionally,reduced phosphorus doping led to an increase in Seebeck coefficients and a relatively minor decrease in electrical conductivity,The power factor didn't deteriorate significantly,either,as its maximum of~3.43 mW·m^(-1-)K^(-2)was achieved at 873 K with(Si_(0.8)Ge_(0.2))_(0.097)P_(0.03)(ZrO_(2))_(0.003).In short,a peak figure of merit(ZT)of~1.27 at 873 K and an average ZT~0.7 from 323 to 873 K were obtained.This study demonstrates that the electrical and thermal transportation of SiGe material can be synergistically tuned by compositing ZrO_(2),illustrating a novel strategy to optimize the TE properties of bulk materials.展开更多
Based on theoretical analysis and computer-aided simulation, optimized design principles for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials,determination of germanium percentage and pr...Based on theoretical analysis and computer-aided simulation, optimized design principles for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials,determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap layer, and adjustment of threshold voltage. In the light of these principles,a SiGe PMOSFET is designed and fabricated successfully. Measurement indicates that the SiGe PMOSFET's (L=2μm) transconductance is 45 mS/mm (300K) and 92mS/mm (77K), while that is 33 mS/mm (300K) and 39mS/mm (77K) in Si PMOSFET with the same structure.展开更多
Strained SiGe alloys are successfully grown on Si(100) substrate in gas source molecular beam epitaxy system using disilane (Si 2H 6) and germane (GeH 4). The surface reconstructions are monitored by in situ r...Strained SiGe alloys are successfully grown on Si(100) substrate in gas source molecular beam epitaxy system using disilane (Si 2H 6) and germane (GeH 4). The surface reconstructions are monitored by in situ reflection high energy electron diffraction during epitaxy. At a fixed substrate temperature, the Ge composition in the alloys increase with GeH 4/(GeH 4+2Si 2H 6) gas flow rate ratio. Surface morphologies of the grown samples show a strong dependence on the Ge composition, substrate temperature and SiGe epilayer thickness. Results indicate that high substrate temperature and large Ge composition are favorable for the growth mode transition from two dimensional to three dimensional growth.展开更多
To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe （including： bulk, （001） surface, and （110） surface） are calculated by DPT ＋ U me...To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe （including： bulk, （001） surface, and （110） surface） are calculated by DPT ＋ U method in the present work. The calculated results are as follows. （i） The （110） surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. （ii） For O interstitial doping on SiGe （110） surface, the existences of energy states caused by 0 doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. （iii） The finding about decreased surface work function of O-doped SiGe （110） surface can confirm previous experimental observations. （iv） In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar ceils in the future.展开更多
In order to discuss the application possibility of SiGe crystal in thermoelectric materials, we investigated the thermoelectric properties of several silicon-germanium alloys with different content, orientation and el...In order to discuss the application possibility of SiGe crystal in thermoelectric materials, we investigated the thermoelectric properties of several silicon-germanium alloys with different content, orientation and electric conductive type. As discussed in the experiment result, the absolute value of Seebeck coefficient fluctuates from 300 to 600 μV/K in the whole temperature range. In the present paper, the relationship of Seebeck coefficient against content, orientation and electric conductive type is summarized in detail. The Seebeck coefficient of the sample with 〈111〉 orientation is smaller than that in 〈100〉 at the same temperature. Absolute value of P-type is larger than that of N-type except pure Ge. But as the temperature increases, the absolute value of pure Ge decreases many times as quickly as that of other specimens. In addition, the specimens of bulk GeSi alloy crystals for experiment were grown by the Czoehralski method through varying the pulling rate during the growing process.展开更多
A novel infrared light emitting diode （LED） based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence （EL） emission of this LED is in the inf...A novel infrared light emitting diode （LED） based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence （EL） emission of this LED is in the infrared range, which is dominated by the band gap of Si1-xGex alloy. The EL wavelength variation of the LED shows a red shift, which increases with increasing mole fraction of Ge. With Ge mole fractions of 0.18, 0.23 and 0.29, the average EL wavelengths are around 1,144, 1,162 and 1,185 nm, respectively. The observed magnitudes of the red shifts are consistent with theoretical calculations. Therefore, by modulating the mole fraction of Ge in the Si1-xGex alloy, we can adjust the band gap of the SiGe film and tune the emission wavelength of the fabricated LED. Such an IR LED device may have great potential applications in optical communication, environmental monitoring and biological and medical analyses.展开更多
基金financially supported by the National Key Research and Development Program of China(Nos.2022YFE0119100 and 2017YFE0198000)the National Natural Science Foundation of China(Nos.U21A2054,52273285,52061009 and 52262032)Guangxi Science and Technology Planning Project(No.AD21220056)。
文摘SiGe-based thermoelectric(TE)materials have gained increasing interests due to their low maintenance costs,environmental friendliness and long lifespan.However,the intrinsically high thermal conductivity of Si-based materials also results in poor TE properties.In this investigation,a zirconia(ZrO_(2))composite strategy was applied to an n-type SiGe alloy,tremendously elevating its TE performance.After mechanical alloying and spark plasma sintering(SPS)processes,the ZrO_(2)induced the formation of nanopores in the SiGe matrix via phosphorus adsorption.Moreover,such increase in porosity enhanced the phonon scattering and dramatically suppressed lattice thermal conductivity,from 2.83 to 1.59 W·m^(-1)·K^(-1)at 873 K.Additionally,reduced phosphorus doping led to an increase in Seebeck coefficients and a relatively minor decrease in electrical conductivity,The power factor didn't deteriorate significantly,either,as its maximum of~3.43 mW·m^(-1-)K^(-2)was achieved at 873 K with(Si_(0.8)Ge_(0.2))_(0.097)P_(0.03)(ZrO_(2))_(0.003).In short,a peak figure of merit(ZT)of~1.27 at 873 K and an average ZT~0.7 from 323 to 873 K were obtained.This study demonstrates that the electrical and thermal transportation of SiGe material can be synergistically tuned by compositing ZrO_(2),illustrating a novel strategy to optimize the TE properties of bulk materials.
基金Supported by National Key Laboratory Fund (99Js09 5.1)
文摘Based on theoretical analysis and computer-aided simulation, optimized design principles for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials,determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap layer, and adjustment of threshold voltage. In the light of these principles,a SiGe PMOSFET is designed and fabricated successfully. Measurement indicates that the SiGe PMOSFET's (L=2μm) transconductance is 45 mS/mm (300K) and 92mS/mm (77K), while that is 33 mS/mm (300K) and 39mS/mm (77K) in Si PMOSFET with the same structure.
文摘Strained SiGe alloys are successfully grown on Si(100) substrate in gas source molecular beam epitaxy system using disilane (Si 2H 6) and germane (GeH 4). The surface reconstructions are monitored by in situ reflection high energy electron diffraction during epitaxy. At a fixed substrate temperature, the Ge composition in the alloys increase with GeH 4/(GeH 4+2Si 2H 6) gas flow rate ratio. Surface morphologies of the grown samples show a strong dependence on the Ge composition, substrate temperature and SiGe epilayer thickness. Results indicate that high substrate temperature and large Ge composition are favorable for the growth mode transition from two dimensional to three dimensional growth.
基金Project supported by the Natural Science Foundation of Yunnan Province,China(Grant No.2015FB123)the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project,China(Grant No.2015HB015)the National Natural Science Foundation of China(Grant No.U1037604)
文摘To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe （including： bulk, （001） surface, and （110） surface） are calculated by DPT ＋ U method in the present work. The calculated results are as follows. （i） The （110） surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. （ii） For O interstitial doping on SiGe （110） surface, the existences of energy states caused by 0 doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. （iii） The finding about decreased surface work function of O-doped SiGe （110） surface can confirm previous experimental observations. （iv） In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar ceils in the future.
基金the Natural Science Foundation of Hebei Province (No. 500016)
文摘In order to discuss the application possibility of SiGe crystal in thermoelectric materials, we investigated the thermoelectric properties of several silicon-germanium alloys with different content, orientation and electric conductive type. As discussed in the experiment result, the absolute value of Seebeck coefficient fluctuates from 300 to 600 μV/K in the whole temperature range. In the present paper, the relationship of Seebeck coefficient against content, orientation and electric conductive type is summarized in detail. The Seebeck coefficient of the sample with 〈111〉 orientation is smaller than that in 〈100〉 at the same temperature. Absolute value of P-type is larger than that of N-type except pure Ge. But as the temperature increases, the absolute value of pure Ge decreases many times as quickly as that of other specimens. In addition, the specimens of bulk GeSi alloy crystals for experiment were grown by the Czoehralski method through varying the pulling rate during the growing process.
基金The authors are grateful for the support from the ＂Thousands Talents＂ Program for Pioneer Researchers and Their Innovation Teams, China the President＇s Funding of the Chinese Academy of Sciences+3 种基金 the National Natural Science Foundation of China （Nos. 51272238, 21321062, 51432005 and 61405040） the Innovation Talent Project of Henan Province （No. 13HASTIT020） the Talent Project of Zhengzhou University （No. ZDGD13001） and the Surface Engineering Key Lab of LIPCAST the Tsinghua University Initiative Scientific Research Program, the National Natural Science Foundation of China （No. 61306105）.
文摘A novel infrared light emitting diode （LED） based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence （EL） emission of this LED is in the infrared range, which is dominated by the band gap of Si1-xGex alloy. The EL wavelength variation of the LED shows a red shift, which increases with increasing mole fraction of Ge. With Ge mole fractions of 0.18, 0.23 and 0.29, the average EL wavelengths are around 1,144, 1,162 and 1,185 nm, respectively. The observed magnitudes of the red shifts are consistent with theoretical calculations. Therefore, by modulating the mole fraction of Ge in the Si1-xGex alloy, we can adjust the band gap of the SiGe film and tune the emission wavelength of the fabricated LED. Such an IR LED device may have great potential applications in optical communication, environmental monitoring and biological and medical analyses.
