Single-gallium antimonide （GaSb）-nanowire- based photodetectors were fabricated on both rigid SiO2/Si substrate and flexible polyethylene terephthalate （PET） substrates, both of which exhibited high responsivity, ...Single-gallium antimonide （GaSb）-nanowire- based photodetectors were fabricated on both rigid SiO2/Si substrate and flexible polyethylene terephthalate （PET） substrates, both of which exhibited high responsivity, fast- response, and long-term stability in photoswitching over a broad spectral range from ultraviolet to near infrared. Besides, the as-fabricated rigid device exhibited high responsivity of 7,350 A/W under illumination of 2 = 350 nm and light intensity P = 0.2 mW/cm^2, while the flexible device displays higher detectivity of 9.67 × 10^9 jones at 700 nm than the rigid one and lower noise equivalent power （NEP, NEP＊700 nm = 2.0 × 10^-12 W/Hz^1/2） for the much lower dark current on PET. The high responsivity, broad spectral detection from ultraviolet to near-infrared and long-term stability make GaSb nanowire one of the most important candidates to construct advanced optical sensors or other optoelectronic devices.展开更多
基金supported by the National Natural Science Foundation of China(61377033,91123008)
文摘Single-gallium antimonide （GaSb）-nanowire- based photodetectors were fabricated on both rigid SiO2/Si substrate and flexible polyethylene terephthalate （PET） substrates, both of which exhibited high responsivity, fast- response, and long-term stability in photoswitching over a broad spectral range from ultraviolet to near infrared. Besides, the as-fabricated rigid device exhibited high responsivity of 7,350 A/W under illumination of 2 = 350 nm and light intensity P = 0.2 mW/cm^2, while the flexible device displays higher detectivity of 9.67 × 10^9 jones at 700 nm than the rigid one and lower noise equivalent power （NEP, NEP＊700 nm = 2.0 × 10^-12 W/Hz^1/2） for the much lower dark current on PET. The high responsivity, broad spectral detection from ultraviolet to near-infrared and long-term stability make GaSb nanowire one of the most important candidates to construct advanced optical sensors or other optoelectronic devices.
