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Preparation and Analysis of Carbon Fiber-Silicon Carbide Thermally Conductive Asphalt Concrete
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作者 Zhiyong Yang Enjie Hu +3 位作者 Lei Xi Zhi Chen Feng Xiong Chuanhai Zhan 《Fluid Dynamics & Materials Processing》 EI 2024年第4期705-723,共19页
An experimental investigation into the thermal conductivity of CF-SiC two-phase composite asphalt concrete is presented.The main objective of this study was to verify the possibility of using SiC powder instead of min... An experimental investigation into the thermal conductivity of CF-SiC two-phase composite asphalt concrete is presented.The main objective of this study was to verify the possibility of using SiC powder instead of mineral powder as the thermal conductive filler to prepare a new type of asphalt concrete and improve the efficiency of electrothermal snow and ice melting systems accordingly.The thermal conductivity of asphalt concrete prepared with different thermally conductive fillers was tested by a transient plane source method,and the related performances were measured.Then the temperature rise rate and surface temperature were studied through field heating tests.Finally,the actual ice melting efficiency of the thermally conductive asphalt concrete was evaluated using an effective electrothermal system.As shown by the experimental results,the composite made of SiC powder and carbon fiber has a high thermal conductivity.When SiC replaces mineral powder,the thermal conductivity of the asphalt mixture increases first and then decreases with the increase of carbon fiber content.In the present study,in particular,the thermal conductivity attained a peak when the carbon fiber content was 0.2%of the aggregate mass. 展开更多
关键词 Carbon fiber silicon carbide thermally conductive asphalt concrete road performance electrothermal snow melting
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Research on Silicon Carbide Dispersion-Reinforced Hypereutectic Aluminum-Silicon Electronic Packaging Materials
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作者 Ruixi Guo Yunhao Hua Tianze Jia 《Journal of Electronic Research and Application》 2024年第2期86-94,共9页
The objective of this study is to improve the mechanical properties and machining performance of high thermal conductivity and low expansion silicon carbide dispersion-strengthened hypereutectic aluminum-silicon elect... The objective of this study is to improve the mechanical properties and machining performance of high thermal conductivity and low expansion silicon carbide dispersion-strengthened hypereutectic aluminum-silicon electronic packaging materials to meet the needs of aviation,aerospace,and electronic packaging fields.We used the powder metallurgy method and high-temperature hot pressing technology to prepare SiC/Al-Si composite materials with different SiC contents(5vol%,10vol%,15vol%,and 20vol%).The results showed that as the SiC content increased,the tensile strength of the composite material first increased and then decreased.The tensile strength was the highest when the SiC content was 15%;the sintering temperature significantly affected the composite material’s structural density and mechanical properties.Findings indicated 700℃was the optimal sintering and the optimal SiC content of SiC/Al-Si composite materials was between 10%and 15%.Besides,the sintering temperature should be strictly controlled to improve the material’s structural density and mechanical properties. 展开更多
关键词 silicon carbide Electronic packaging materials Powder metallurgy Mechanical properties Composite materials
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Application of silicon carbide temperature monitors in 49-2 swimming-pool test reactor 被引量:1
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作者 宁广胜 张利民 +6 位作者 钟巍华 王绳鸿 刘心语 汪定平 何安平 刘健 张长义 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第5期97-101,共5页
High purity SiC crystal was used as a passive monitor to measure neutron irradiation temperature in the 49-2 research reactor.The SiC monitors were irradiated with fast neutrons at elevated temperatures to 3.2×10... High purity SiC crystal was used as a passive monitor to measure neutron irradiation temperature in the 49-2 research reactor.The SiC monitors were irradiated with fast neutrons at elevated temperatures to 3.2×10^(20)n/cm^(2).The isochronal and isothermal annealing behaviors of the irradiated SiC were investigated by x-ray diffraction and four-point probe techniques.Invisible point defects and defect clusters are found to be the dominating defect types in the neutron-irradiated SiC.The amount of defect recovery in SiC reaches a maximum value after isothermal annealing for 30 min.Based on the annealing temperature dependences of both lattice swelling and material resistivity,the irradiation temperature of the SiC monitors is determined to be~410℃,which is much higher than the thermocouple temperature of 275℃ recorded during neutron irradiation.The possible reasons for the difference are carefully discussed. 展开更多
关键词 silicon carbide irradiation temperature monitor research reactor
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Unveiling phonon frequency-dependent mechanism of heat transport across stacking fault in silicon carbide
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作者 王甫 孙彦东 +2 位作者 邹宇 徐贲 付宝勤 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第9期373-380,共8页
Stacking faults(SFs)are often present in silicon carbide(SiC)and affect its thermal and heat-transport properties.However,it is unclear how SFs influence thermal transport.Using non-equilibrium molecular dynamics and ... Stacking faults(SFs)are often present in silicon carbide(SiC)and affect its thermal and heat-transport properties.However,it is unclear how SFs influence thermal transport.Using non-equilibrium molecular dynamics and lattice dynamics simulations,we studied phonon transport in SiC materials with an SF.Compared to perfect SiC materials,the SF can reduce thermal conductivity.This is caused by the additional interface thermal resistance(ITR)of SF,which is difficult to capture by the previous phenomenological models.By analyzing the spectral heat flux,we find that SF reduces the contribution of low-frequency(7.5 THz-12 THz)phonons to the heat flux,which can be attributed to SF reducing the phonon lifetime and group velocity,especially in the low-frequency range.The SF hinders phonon transport and results in an effective interface thermal resistance around the SF.Our results provide insight into the microscopic mechanism of the effect of defects on heat transport and have guiding significance for the regulation of the thermal conductivity of materials. 展开更多
关键词 silicon carbide stacking fault thermal conductivity interface thermal resistance phonon transport spectral heat flux
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High-pressure and high-temperature sintering of pure cubic silicon carbide:A study on stress-strain and densification
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作者 刘金鑫 彭放 +5 位作者 马国龙 梁文嘉 何瑞琦 管诗雪 唐越 向晓君 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第9期498-505,共8页
Silicon carbide(SiC)is a high-performance structural ceramic material with excellent comprehensive properties,and is unmatched by metals and other structural materials.In this paper,raw SiC powder with an average grai... Silicon carbide(SiC)is a high-performance structural ceramic material with excellent comprehensive properties,and is unmatched by metals and other structural materials.In this paper,raw SiC powder with an average grain size of 5μm was sintered by an isothermal-compression process at 5.0 GPa and 1500?C;the maximum hardness of the sintered samples was31.3 GPa.Subsequently,scanning electron microscopy was used to observe the microscopic morphology of the recovered SiC samples treated in a temperature and extended pressure range of 0-1500?C and 0-16.0 GPa,respectively.Defects and plastic deformation in the SiC grains were further analyzed by transmission electron microscopy.Further,high-pressure in situ synchrotron radiation x-ray diffraction was used to study the intergranular stress distribution and yield strength under non-hydrostatic compression.This study provides a new viewpoint for the sintering of pure phase micron-sized SiC particles. 展开更多
关键词 high pressure and high temperature silicon carbide stress analysis DEFECT
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Development and Application of Multi-phase Nitrides Bonded Silicon Carbide Lintel Blocks for Dry Quenching Furnaces
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作者 CAO Huiyan FENG Yanbin +4 位作者 ZHANG Xinhua HUANG Zhigang LI Jie WANG Xinhui WU Jiguang 《China's Refractories》 CAS 2023年第2期7-11,共5页
Multi-phase nitrides bonded silicon carbide lintel blocks were prepared using industrial SiC(SiC≥98 mass%,3-0.5,≤0.5 and≤0.044 mm),Si powder(Si≥98 mass%,≤0.044 mm),and SiO2 micropowder(SiO2≥96 mass%,d50=0.15 pm)... Multi-phase nitrides bonded silicon carbide lintel blocks were prepared using industrial SiC(SiC≥98 mass%,3-0.5,≤0.5 and≤0.044 mm),Si powder(Si≥98 mass%,≤0.044 mm),and SiO2 micropowder(SiO2≥96 mass%,d50=0.15 pm)as raw materials,and calcium lignosulfonate as the additive,batching,mixing,and molding on a vibration pressure molding machine,drying and then firing at 1420℃for 10 h in high-purity N2.The apparent porosity,the bulk density,the cold modulus of rupture,the hot modulus of rupture,and the linear expansion coefficient of the samples were tested.The phase composition and the microstructure of the samples at different nitriding depths(50,100,and 150 mm)were analyzed by XRD and SEM.The field application effects of the blocks were studied.The results show that:(1)the multi-phase nitrides bonded silicon carbide refractories can dynamically adjust their own phase composition and minimize structural and thermal stresses,improving the service life of key parts of dry quenching furnaces;(2)calcium lignosulfonate can improve the nitriding micro-environment of multi-phase nitrides bonded silicon carbide lintel blocks,successfully increasing the effective nitriding thickness of the blocks to 300 mm;(3)Sinosteel LI RR provides a unique concept in the design of materials and block types as well as the stable and scientific overall structure,promoting the industrialization process of dry quenching furnaces with long service life in China. 展开更多
关键词 inclined channel area dry quenching furnaces silicon carbide multi-phase nitrides lintel blocks
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Steam Oxidation Resistance Comparison of Several Silicon Carbide Refractories at Elevated Temperatures
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作者 WANG Jiaping WU Jiguang +2 位作者 HUANG Zhigang LYU Chunjiang WANG Wenwu 《China's Refractories》 CAS 2023年第2期18-23,共6页
The oxidation tests of different SiC refractories including Si3N4-SiC bricks,Si3N4-Si2N2O-SiC bricks from China(SNO-1),Si3N4-Si2N2O-SiC bricks from overseas(SNO-2),SiAlON-SiC bricks,oxides bonded SiC bricks,self-bonde... The oxidation tests of different SiC refractories including Si3N4-SiC bricks,Si3N4-Si2N2O-SiC bricks from China(SNO-1),Si3N4-Si2N2O-SiC bricks from overseas(SNO-2),SiAlON-SiC bricks,oxides bonded SiC bricks,self-bonded SiC bricks as well as SiC castables were carried out in the steam atmosphere(1 000 ℃,32 kg·m-3·h-1)for different durations(100,200,300,400 and 500 h).The mass,the volume,the bulk density and the apparent porosity before and after the oxidation were tested.The XRD and SEM analyses were conducted.The results indicate that:(1)under the steam atmosphere condition(1 000 ℃,32 kg·m-3·h-1),as the oxidation time increases from 0 to 500 h,the volume and the mass of the silicon carbide refractories increase,while the bulk density decreases;in terms of the apparent porosity,oxides bonded SiC bricks and SiC castables present an increasing trend,Si3N4-SiC bricks,SiAlON-SiC bricks and self-bonded SiC bricks present an increasing trend first and then a decreasing trend,and Si3N4-Si2N2O-SiC bricks present a decreasing trend or a trend of decreasing first and then increasing;(2)as for Si3N4-Si2N2O-SiC bricks,SNO-1 and SNO-2 have basically the same chemical and phase composition,SNO-2 has the lower mass change rate than SNO-1 during oxidation from 200-500 h,which indicates that SNO-2 has the better steam oxidation resistance than SNO-1. 展开更多
关键词 silicon carbide REFRACTORIES STEAM oxidation resistance
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Fabrication and Pressureless Sintering of Silicon Carbide Refractories
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作者 GUO Junhua WANG Wenwu +1 位作者 CAO Huiyan XU Haiyang 《China's Refractories》 CAS 2021年第4期40-44,共5页
This work studies the fabrication and pressureless sintering of silicon carbide(SiC)refractories.SiC particles were adopted as aggregates,introducing different amounts(20%,30%,40%,50%,and 60%,by mass)of submicron SiC ... This work studies the fabrication and pressureless sintering of silicon carbide(SiC)refractories.SiC particles were adopted as aggregates,introducing different amounts(20%,30%,40%,50%,and 60%,by mass)of submicron SiC powder,adding resin as the binder and the carbon source,and B4C as the sintering aid.It is found that when the mass ratio of B4C to the submicron SiC powder is 3%,the optimal sintering can be obtained.With the increase of the submicron powder addition,the sintering linear shrinkage increases and the mechanical properties enhance.The optimal sintering temperature is 2050-2100℃. 展开更多
关键词 silicon carbide refractories submicron silicon carbide powder pressureless sintering
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Diffusion Bonding of Silicon Carbide Particulate Reinforced 2024 Al Composites 被引量:6
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作者 Mingjiu ZHAO+, Liqing CHEN and Jing BI (Metal Matrix Composites Department, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110015, China) Gang ZHANG (Shenyang Institute of Technology, Shenyang 110015, China) 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2000年第5期471-474,共4页
A study has been made on diffusion bonding of SiCp/2024Al composites by means of pure Al interlayer. In the condition of TB=843 K, PB=16 MPa, tB=60 min, the diffusion bonded joint, with a shear strength of 235 MPa, wa... A study has been made on diffusion bonding of SiCp/2024Al composites by means of pure Al interlayer. In the condition of TB=843 K, PB=16 MPa, tB=60 min, the diffusion bonded joint, with a shear strength of 235 MPa, was obtained when a 15μm thick interlayer was used. The results of the shear testing and SEM indicate that fracture of the joint presented characteristics of ductile rupture. 展开更多
关键词 Diffusion Bonding of silicon carbide Particulate Reinforced 2024 Al Composites SICP AL
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Microstructural characterization of silicon carbide reinforced dissimilar grade aluminium explosive clads 被引量:2
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作者 S.Saravanan H.Inokawa +1 位作者 R.Tomoshige K.Raghukandan 《Defence Technology(防务技术)》 SCIE EI CAS CSCD 2020年第3期689-694,共6页
Aluminium composites are inevitable in ship building,commercial and defence aircrafts construction due to their light weight,high strength to weight ratio,admirable properties and cost affordability.In this study,the ... Aluminium composites are inevitable in ship building,commercial and defence aircrafts construction due to their light weight,high strength to weight ratio,admirable properties and cost affordability.In this study,the microstructural characteristics of explosive cladded dissimilar grade aluminium(Al 1100-Al 5052) clad composites reinforced with silicon carbide(SiC) particles is presented.Microstructure taken at the interface by optical and scanning electron microscopes(SEM) revealed the formation of a silicon carbide layer between the dissimilar grade aluminium sheets.Though reaction layers were witnessed at few locations along the interface,the diffusion of atoms between the participant metals is not visible as confirmed by energy dispersive spectroscopy,elemental mapping,line analysis and X-ray diffraction(XRD).The variation in microhardness at various regions of the silicon carbide reinforced dissimilar aluminium explosive clad is reported.The increase in tensile strength of the SiC laced clad is also presented. 展开更多
关键词 Explosive cladding Aluminium silicon carbide MICROSTRUCTURE Elemental mapping HARDNESS
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Separation of methane from different gas mixtures using modified silicon carbide nanosheet: Micro and macro scale numerical studies 被引量:2
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作者 Golchehreh Bayat Roozbeh Saghatchi +1 位作者 Jafar Azamat Alireza Khataee 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2020年第5期1268-1276,共9页
This research discusses the separation of methane gas from three different gas mixtures,CH4/H2 S,CH4/N2 and CH4/CO2,using a modified silicon carbide nanosheet(Si CNS)membrane using both molecular dynamics(MD)and compu... This research discusses the separation of methane gas from three different gas mixtures,CH4/H2 S,CH4/N2 and CH4/CO2,using a modified silicon carbide nanosheet(Si CNS)membrane using both molecular dynamics(MD)and computational fluid dynamics(CFD)methods.The research examines the effects of different structures of the Si CNSs on the separation of these gas mixtures.Various parameters including the potential of the mean force,separation factor,permeation rate,selectivity and diffusivity are discussed in detail.Our MD simulations showed that the separation of CH4/H2 S,and CH4/CO2 mixtures was successful,while simulation demonstrated a poor result for the CH4/N2 mixture.The effect of temperature on the diffusivity of gas is also discussed,and a correlation is introduced for diffusivity as a function of temperature.The evaluated value for diffusivity is then used in the CFD method to investigate the permeation rate of gas mixtures. 展开更多
关键词 Gas separation silicon carbide nanosheets Molecular dynamics Computational fluid dynamics
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Temperature Fluctuation Synthesis/Simultaneous Densification and Microstructure Control of Titanium Silicon Carbide (Ti_3SiC_2) Ceramics 被引量:2
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作者 Zhimei SUN and Yanchun ZHOU (Ceramic and Composite Department, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110015, China) 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2000年第5期461-465,共5页
A novel temperature fluctuation synthesis/simultaneous densification process was developed for the preparation of Ti3SiC2 bulk ceramics. In this process. Si is used as an in-situ liquid forming phase and it is favorab... A novel temperature fluctuation synthesis/simultaneous densification process was developed for the preparation of Ti3SiC2 bulk ceramics. In this process. Si is used as an in-situ liquid forming phase and it is favorable for both the solid-liquid synthesis and the densification of Ti3SiC2 rainies. The present work demonstrated that the temperature fluctuation synthesis/simultaneous densification process is one of the most effective and simple methods for the preparation of Ti3SiC2 bulk materials providing relatively low synthesis temperature. short reaction time; and simultaneous synthesis and densification. This work also showed the capability to control the microstructure, e.g., the preferred orientation, of the bulk Ti3SiC2 materials simply by applying the hot pressing pressure at different Stages of the temperature fluctuation process. And textured Ti3SiC2 bulk materials with {002} faces of laminated Ti3SiC2 grains normal to the hot pressing axis were prepared. 展开更多
关键词 CERAMICS Temperature Fluctuation Synthesis/Simultaneous Densification and Microstructure Control of Titanium silicon carbide TI3SIC2 SIC
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Steam Oxidation Resistance of Silicon Carbide Castables at Elevated Temperatures 被引量:2
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作者 SHI Huiying WANG Jiaping +2 位作者 WU Jiguang HUANG Zhigang QIN Hongbin 《China's Refractories》 CAS 2021年第3期23-27,共5页
Silicon carbide castables of different SiC contents(86%and 71%,by mass)were prepared using white fused corundum,silicon carbide particles and fines,activated alumina powder,silica fume and pure calcium aluminate cemen... Silicon carbide castables of different SiC contents(86%and 71%,by mass)were prepared using white fused corundum,silicon carbide particles and fines,activated alumina powder,silica fume and pure calcium aluminate cement as main starting materials,heat treating at 1000℃ for 3 h,and oxidizing in steam atmosphere at 1000℃ for different durations(100,200,300,400 and 500 h).The mass and volume before and after oxidation,the bulk density,the apparent porosity and the cold compressive strength were tested.The phase composition and the microstructure before and after oxidation were analyzed by XRD and SEM.The results indicate that:(1)within 300 h of oxidation duration,silicon carbide shows an increasing oxidation rate;however,the oxidation rate is low during 300-500 h of oxidation duration;2)the oxidation rate of the specimen with 71%SiC is slightly higher than the one with 86%SiC;3)with the increasing oxidation degree of silicon carbide,the apparent porosity of the specimens tends to increase,followed by the declining bulk density and cold compressive strength. 展开更多
关键词 silicon carbide refractory castables STEAM OXIDATION oxidation resistance
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Effect of silicon carbide and wire-mesh reinforcements in dissimilar grade aluminium explosive clad composites 被引量:1
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作者 S.Saravanan K.Raghukandan 《Defence Technology(防务技术)》 SCIE EI CAS CSCD 2020年第6期1160-1166,共7页
Aluminium composites are inevitable in the manufacture of aircraft structural elements owing to less weight,superior corrosion resistance and higher specific properties.These composites reduce the weight of the aircra... Aluminium composites are inevitable in the manufacture of aircraft structural elements owing to less weight,superior corrosion resistance and higher specific properties.These composites reduce the weight of the aircraft,improve the fuel efficiency and enhance the maintenance duration.This study proposes the development of dissimilar grade aluminium(aluminium 1100-aluminium 5052)composites with different reinforcement’s viz.,stainless steel wire-mesh,silicon carbide(SiC)powders and SiC powder interspersed wire-mesh,by explosive cladding technique.Wire-mesh enhances the friction and restricts the movement of flyer plate to craft a defect free clad,while SiC particles form a band on the interface.Highest strength is obtained when SiC powder interspersed wire mesh is employed as reinforcement.The dissimilar aluminium explosive clad with SiC particle reinforcement results in lower strength,which is higher than that of the weaker parent alloy and that of the conventional dissimilar aluminium explosive clads without any reinforcement. 展开更多
关键词 Explosive cladding Aluminium Wire mesh silicon carbide Microstructure Strength
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A review of manufacturing technologies for silicon carbide superjunction devices 被引量:1
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作者 Run Tian Chao Ma +3 位作者 Jingmin Wu Zhiyu Guo Xiang Yang Zhongchao Fan 《Journal of Semiconductors》 EI CAS CSCD 2021年第6期19-24,共6页
Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect tra... Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect transistor devices.Numerous efforts have been conducted to employ the same concept in silicon carbide devices.These works are summarized here. 展开更多
关键词 silicon carbide(SiC) power semiconductor devices superjunction(SJ) process development
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Effects of Pore-forming Agents on Properties of Silicon Carbide Porous Ceramics Prepared from Crystalline Silicon Cutting Waste 被引量:1
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作者 MA Beiyue WU Hua +2 位作者 GAO Zhi REN Xinming ZHANG Yaran 《China's Refractories》 CAS 2019年第4期12-16,共5页
SiC powder was rapidly synthesized in an induction furnace with crystalline silicon cutting waste and active carbon as raw materials,and then SiC porous ceramics were prepared at 1600 t for 4 h with carbon embedded us... SiC powder was rapidly synthesized in an induction furnace with crystalline silicon cutting waste and active carbon as raw materials,and then SiC porous ceramics were prepared at 1600 t for 4 h with carbon embedded using the powder as raw material,the starch and the graphite as pore-forming agents.Effects of additions of different pore-forming agents on the phase composition,microstructures,physical properties,and cold crushing strength of the porous ceramics were investigated.The results show that the main crystalline phases of the synthetic powder areα-S iC(6H-SiC)andβ-SiC(3C-SiC).The phase composition of the porous ceramics includesα-S iC(6H-SiC),β-SiC(3C-SiC),FeSi,quartz and Si2N20.The apparent porosity and closed porosity of the porous ceramics prepared by adding starch are higher,and the cold compressive strength of the porous ceramics added with graphite is higher.As increasing the additions of the starch,the apparent porosity,closed porosity and linear shrinkage ratio of the porous ceramics increase,and the bulk density decreases correspondingly.When 20 mass%starch is added,the apparent porosity,closed porosity,linear shrinkage ratio and cold compressive strength are 57.05%,2.03%,5.10%and 10.20 MPa,respectively. 展开更多
关键词 silicon carbide porous ceramics pore-forming agent crystalline silicon cutting waste
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Preparation of Silicon Carbide with High Properties 被引量:1
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作者 Guangiiang YUAN Yang ZHOU and Daming CHEN National Key Laboratory of Advanced Composites, Beijing institute of Aeronautical Materials, P.O. Box 81-3, Beijing 100095, China Bangsheng LI School of Materials Science and Engineering, Harbin institute of Tech 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2001年第1期53-54,共2页
In order to prepare silicon carbide with high properties, three kinds of SiC powders A, B, and C with different composition and two kinds of additives, which were Y2O3-A12O3 system and Y2O3-La2O3 system, were used in ... In order to prepare silicon carbide with high properties, three kinds of SiC powders A, B, and C with different composition and two kinds of additives, which were Y2O3-A12O3 system and Y2O3-La2O3 system, were used in this experiment. The properties of hot-pressed SiC ceramics were measured. With the same additives, different SiC powder resulted in different properties. On the other hand, with the same SiC powder, increasing the amount of the additive Y2O3Al2O3 improved properties of SiC ceramics at room temperature, and increasing the amount of the additive Y2O3-La2O3 improved property SiC ceramics at elevated temperature. In addition. the microstructure of SiC ceramics was studied by scanning electron microscopy. 展开更多
关键词 SIC Preparation of silicon carbide with High Properties
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Steam Oxidation Resistance of Nitride Bonded Silicon Carbide Refractories for Waste Incinerators at Elevated Temperatures 被引量:1
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作者 HUANG Zhigang WANG Jiaping +2 位作者 LI Jie CAO Huiyan WU Jiguang 《China's Refractories》 CAS 2019年第3期4-7,共4页
Steam oxidation resistance of Si3N4 and Si2N2O as well as SiAlON bonded SiC refractories at 900℃was tested according to ASTM-C863.Phase composition and microstructure before and after oxidation were analyzed by XRD a... Steam oxidation resistance of Si3N4 and Si2N2O as well as SiAlON bonded SiC refractories at 900℃was tested according to ASTM-C863.Phase composition and microstructure before and after oxidation were analyzed by XRD and SEM.The results show that Si3N4 and Si2N2O bonded SiC refractory presents better steam oxidation resistance than SiAlON bonded SiC.For Si3N4 and Si2N2O bonded SiC,the oxidation speed is higher with more pronounced volume expansion in the early 100 h;afterwards,the volume expansion slows down gradually and starts to level off after 300 h.It is considered that the high silica glass phase formed during the oxidation covers Si3N4 and Si2N2O,and SiC as a protective layer and fills the open pores.But for SiAlON bonded SiC,the volume expands gradually and constantly with the increasing oxidation duration even after 500 h,due to the continuous formation of mullite transformed from oxidation products and Al2O3 in SiAlON. 展开更多
关键词 nitride bonded silicon carbide steam oxidation resistance waste incinerator
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Application of Reaction-Bonded Silicon Carbide in Manufacturing of Spacecraft Combustion Chamber
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作者 CHEN Ming-he, GAO Lin, ZHOU Jian-hua, WANG Min (College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China) 《厦门大学学报(自然科学版)》 CAS CSCD 北大核心 2002年第S1期2-,共1页
Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resi... Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resistance to thermal shock and high abrasion resistance. The silicon carbide ceramics material has so far been used widely for manufacturing various components such as heat exchangers, rolls, rockets combustion chamber. Sintering of ceramics structural parts have many technological method, the reaction-bonded is one of important sintering technology of ceramics structural parts. The preparation of reaction-bonded silicon carbide (RBSC) is based on a reaction sintering process, whereby a compacted body of α-SiC and carbon (graphite) powders is heated in contact with liquid silicon or gas silicon, which impregnates the body, converting the carbon (graphite) to β-SiC which bonds the original alpha grain. This process is characterized by low temperature and a short time sintering, and being appropriate to the preparation of large size and complex-shaped components, and so on. Besides, during compacting process of reaction sintering, it can maintain a stable dimension of ceramics parts. Therefore, the method of reaction-bonded silicon carbide ceramics has been identified as a technology suitable for producing complicated and highly exact dimensions’ ceramics parts. In this paper, the method of reaction-bonded silicon carbide was applied to the manufacturing of a complex-shaped spacecraft combustion chamber of SiC ceramics. SiC and carbon powder of 4~30 μm were chosen as the raw materials, green compacts containing appropriate wt.% carbon were formed using the mold press method, sintering was performed in a graphite electric furnace under an argon atmosphere. It was introduced in detail that the technological parameters and technological flow of reaction sintering silicon carbide ceramics. At the same time, physical and mechanical experiments such as bending strength, coefficient of thermal expansion, coefficient of thermal conductivity, gastight property, heat resisting property etc. have been carried out. The results demonstrated that spacecraft combustion chamber made from reaction sintering of silicon carbide ceramics is feasible and the results of experiment is satisfactory. The strength of high-temperature structural parts made by reaction sintered SiC varied with silicon content; Under the this article testing condition, the optimum silicon content is 10.5% for the part investigated. The method of reaction sintered SiC ceramics is suitable for manufacturing of complicated spacecraft parts with a working temperature of 1 500 ℃. 展开更多
关键词 silicon carbide ceramics SPACECRAFT combustion chamber reaction bonded
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Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film
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作者 张健 张昊春 +2 位作者 黄子亮 孙文博 李依依 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第1期382-387,共6页
In recent years,there is a strong interest in thermal cloaking at the nanoscale,which has been achieved by using graphene and crystalline silicon films to build the nanoscale thermal cloak according to the classical m... In recent years,there is a strong interest in thermal cloaking at the nanoscale,which has been achieved by using graphene and crystalline silicon films to build the nanoscale thermal cloak according to the classical macroscopic thermal cloak model.Silicon carbide,as a representative of the third-generation semiconductor material,has splendid properties,such as the high thermal conductivity and the high wear resistance.Therefore,in the present study,we build a nanoscale thermal cloak based on silicon carbide.The cloaking performance and the perturbation of the functional area to the external temperature filed are analyzed by the ratio of thermal cloaking and the response temperature,respectively.It is demonstrated that silicon carbide can also be used to build the nanoscale thermal cloak.Besides,we explore the influence of inner and outer radius on cloaking performance.Finally,the potential mechanism of the designed nanoscale thermal cloak is investigated by calculating and analyzing the phonon density of states(PDOS)and mode participation rate(MPR)within the structure.We find that the main reason for the decrease in the thermal conductivity of the functional area is phonon localization.This study extends the preparation method of nanoscale thermal cloaks and can provide a reference for the development of other nanoscale devices. 展开更多
关键词 nanoscale thermal cloak silicon carbide molecular dynamics in-situ annealing
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