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纳米SmB6掺杂CaNb2O6橙红色荧光粉光致发光增强研究
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作者 潘晓剑 包黎红 +2 位作者 张红艳 朝克夫 那仁格日乐 《内蒙古师范大学学报(自然科学汉文版)》 CAS 2020年第6期535-540,共6页
首次以纳米SmB6替代传统的Sm2O3激活剂,制备了一系列Ca1-xNb2O6:x SmB6橙红色荧光粉。采用XRD和SEM等方式对荧光粉粉末进行表征与分析,研究了Ca1-xNb2O6:x SmB6荧光粉的物相、晶体结构、颗粒形貌和光致发光特性。精修结果表明:Sm3+和B2... 首次以纳米SmB6替代传统的Sm2O3激活剂,制备了一系列Ca1-xNb2O6:x SmB6橙红色荧光粉。采用XRD和SEM等方式对荧光粉粉末进行表征与分析,研究了Ca1-xNb2O6:x SmB6荧光粉的物相、晶体结构、颗粒形貌和光致发光特性。精修结果表明:Sm3+和B2-分别成功的替代了Ca2+和O2-的晶格位。根据光致发光实验结果,SmB6掺杂物质的量为0.04mol时,荧光粉的发光强度达到最高值,其发光强度约为使用Sm2O3激活剂的1.4倍。Ca1-xNb2O6:x SmB6荧光粉可作为白光LED中的潜在材料。 展开更多
关键词 纳米smb6 CaNb2O6荧光粉 白光LED
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SmB6单晶纳米结构的可控制备及场发射特性研究
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作者 张彤 黎子娟 +6 位作者 郭泽堃 田颜 林浩坚 许宁生 陈军 邓少芝 刘飞 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2020年第2期199-204,共6页
作为一种典型的近藤拓扑绝缘体,近年来六硼化钐(SmB6)材料受到了凝聚态物理和材料科学领域研究者的广泛关注。与块体材料相比,SmB6纳米材料由于具有更大的比表面积而拥有更为丰富的表面电子态,因此被认为是一个研究表面量子效应和物理... 作为一种典型的近藤拓扑绝缘体,近年来六硼化钐(SmB6)材料受到了凝聚态物理和材料科学领域研究者的广泛关注。与块体材料相比,SmB6纳米材料由于具有更大的比表面积而拥有更为丰富的表面电子态,因此被认为是一个研究表面量子效应和物理机制的理想平台。由于场发射电流主要来源于纳米材料的表面态,所以研究SmB6纳米材料的场发射特性可以为研究其表面量子特性提供有益的参考。本研究利用化学气相沉积法,通过控制实验条件在硅衬底上分别实现了SmB6纳米带和纳米线薄膜的生长。研究结果表明:所制备的SmB6纳米线和纳米带分别为沿着[100]和[110]方向生长的立方单晶结构。场发射特性的测试结果发现:SmB6纳米带薄膜的开启电场为3.24 V/μm,最大电流密度达到了466.16μA/cm2,其场发射性能要优于纳米线薄膜。同时考虑到SmB6拥有很低的电子亲和势、高电导率和丰富的表面电子态,所以若可以进一步提高其场发射特性,那么很可能在冷阴极电子源领域有潜在应用。 展开更多
关键词 六硼化钐 近藤拓扑绝缘体 纳米线 纳米带 场致电子发射
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Quantum phase transition and destruction of Kondo effect in pressurized SmB6
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作者 yazhou zhou qi wu +19 位作者 priscila f.s.rosa rong yu jing guo wei yi shan zhang zhe wang honghong wang shu cai ke yang aiguo li zheng jiang shuo zhang xiangjun wei yuying huang peijie sun yi-feng yang zachary fisk qimiao si zhongxian zhao liling sun 《Science Bulletin》 SCIE EI CAS CSCD 2017年第21期1439-1444,共6页
SmB_6 has been a well-known Kondo insulator for decades, but recently attracts extensive new attention as a candidate topological system. Studying SmB_6 under pressure provides an opportunity to acquire the much-neede... SmB_6 has been a well-known Kondo insulator for decades, but recently attracts extensive new attention as a candidate topological system. Studying SmB_6 under pressure provides an opportunity to acquire the much-needed understanding about the effect of electron correlations on both the metallic surface state and bulk insulating state. Here we do so by studying the evolution of two transport gaps(low temperature gap E_l and high temperature gap E_h) associated with the Kondo effect by measuring the electrical resistivity under high pressure and low temperature(0.3 K) conditions. We associate the gaps with the bulk Kondo hybridization, and from their evolution with pressure we demonstrate an insulator-tometal transition at ~4 GPa. At the transition pressure, a large change in the Hall number and a divergence tendency of the electron-electron scattering coefficient provide evidence for a destruction of the Kondo entanglement in the ground state. Our results raise the new prospect for studying topological electronic states in quantum critical materials settings. 展开更多
关键词 Kondo insulator Surface state smb6 High pressure
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An easy way to controllably synthesize one-dimensional Sm B_6 topological insulator nanostructures and exploration of their field emission applications 被引量:2
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作者 杨汛 甘海波 +6 位作者 田颜 许宁生 邓少芝 陈军 陈焕君 梁世东 刘飞 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第11期503-509,共7页
A convenient fabrication technique for samarium hexaboride(SmB6) nanostructures(nanowires and nanopencils) is developed, combining magnetron-sputtering and chemical vapor deposition. Both nanostructures are proven... A convenient fabrication technique for samarium hexaboride(SmB6) nanostructures(nanowires and nanopencils) is developed, combining magnetron-sputtering and chemical vapor deposition. Both nanostructures are proven to be single crystals with cubic structure, and they both grow along the [001] direction. Formation of both nanostructures is attributed to the vapor-liquid-solid(VLS) mechanism, and the content of boron vapor is proposed to be the reason for their different morphologies at various evaporation distances. Field emission(FE) measurements show that the maximum current density of both the as-grown nanowires and nanopencils can be several hundred μA/cm^2, and their FN plots deviate only slightly from a straight line. Moreover, we prefer the generalized Schottky-Nordheim(SN) model to comprehend the difference in FE properties between the nanowires and nanopencils. The results reveal that the nonlinearity of FN plots is attributable to the effect of image potential on the FE process, which is almost independent of the morphology of the nanostructures.All the research results suggest that the SmB6 nanostructures would have a more promising future in the FE area if their surface oxide layer was eliminated in advance. 展开更多
关键词 one-dimensional smb6 nanostructures chemical vapor deposition(CVD) field emission(FE) image potential
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