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Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors
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作者 Xiao Li Zhikang Ma +6 位作者 Jinxiong Li Wengao Pan Congwei Liao Shengdong Zhang Zhuo Gao Dong Fu Lei Lu 《Journal of Semiconductors》 EI CAS CSCD 2024年第10期54-59,共6页
This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojun... This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor(TFT)using the elevated-metal metal-oxide(EMMO)architecture and indium−zinc oxide(InZnO).The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas(2DEG)at the interface quantum well,as verified using a metal−insulator−semiconductor(MIS)device.Although the 2DEG indeed contributes to a higher mobility than the monolayer channel,the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect,originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well.Benefited from the proper energy-band engineering,a high mobility of 84.3 cm2·V^(−1)·s^(−1),a decent threshold voltage(V_(th))of−6.5 V,and a steep subthreshold swing(SS)of 0.29 V/dec were obtained in InZnO-based heterojunction TFT. 展开更多
关键词 oxide semiconductor thin-film transistors two-dimensional electron gas HETEROJUNCTION high mobility
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Indispensable gutter layers in thin-film composite membranes for carbon capture
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作者 Gengyi Zhang Haiqing Lin 《Green Energy & Environment》 SCIE EI CAS CSCD 2024年第8期1220-1238,共19页
Industrial thin-film composite(TFC)membranes achieve superior gas separation properties from high-performance selective layer materials,while the success of membrane technology relies on high-performance gutter layers... Industrial thin-film composite(TFC)membranes achieve superior gas separation properties from high-performance selective layer materials,while the success of membrane technology relies on high-performance gutter layers to achieve production scalability and low-cost manufacturing.However,the current literature predominantly focuses on the design of polymer architectures to obtain high permeability and selectivity,while the art of fabricating gutter layers is usually safeguarded by industrial manufacturers and appears lackluster to academic researchers.This is the first report aiming to provide a comprehensive and critical review of state-of-the-art gutter layer materials and their design and modification to enable TFC membranes with superior separation performance.We first elucidate the importance of the gutter layer on membrane performance through modeling and experimental results.Then various gutter layer materials used to obtain high-performance composite membranes are critically reviewed,and the strategies to improve their compatibility with the selective layer are highlighted,such as oxygen plasma treatment,polydopamine deposition,and surface grafting.Finally,we present the opportunities of the gutter layer design for practical applications. 展开更多
关键词 thin-film composite membranes Gutter layer Gas separation Carbon capture
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Implementation of sub-100 nm vertical channel-all-around(CAA) thin-film transistor using thermal atomic layer deposited IGZO channel
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作者 Yuting Chen Xinlv Duan +9 位作者 Xueli Ma Peng Yuan Zhengying Jiao Yongqing Shen Liguo Chai Qingjie Luan Jinjuan Xiang Di Geng Guilei Wang Chao Zhao 《Journal of Semiconductors》 EI CAS CSCD 2024年第7期40-44,共5页
In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for th... In-Ga-Zn-O(IGZO) channel based thin-film transistors(TFT), which exhibit high on-off current ratio and relatively high mobility, has been widely researched due to its back end of line(BEOL)-compatible potential for the next generation dynamic random access memory(DRAM) application. In this work, thermal atomic layer deposition(TALD) indium gallium zinc oxide(IGZO) technology was explored. It was found that the atomic composition and the physical properties of the IGZO films can be modulated by changing the sub-cycles number during atomic layer deposition(ALD) process. In addition, thin-film transistors(TFTs) with vertical channel-all-around(CAA) structure were realized to explore the influence of different IGZO films as channel layers on the performance of transistors. Our research demonstrates that TALD is crucial for high density integration technology, and the proposed vertical IGZO CAA-TFT provides a feasible path to break through the technical problems for the continuous scale of electronic equipment. 展开更多
关键词 In-Ga-Zn-O(IGZO) thermal atomic layer deposition vertical channel thin-film transistor
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Numerical Study and Optimization of CZTS-Based Thin-Film Solar Cell Structure with Different Novel Buffer-Layer Materials Using SCAPS-1D Software
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作者 Md. Zamil Sultan Arman Shahriar +4 位作者 Rony Tota Md. Nuralam Howlader Hasibul Haque Rodro Mahfuja Jannat Akhy Md. Abir Al Rashik 《Energy and Power Engineering》 2024年第4期179-195,共17页
This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentr... This study explored the performances of CZTS-based thin-film solar cell with three novel buffer layer materials ZnS, CdS, and CdZnS, as well as with variation in thickness of buffer and absorber-layer, doping concentrations of absorber-layer material and operating temperature. Our aims focused to identify the most optimal thin-film solar cell structure that offers high efficiency and lower toxicity which are desirable for sustainable and eco-friendly energy sources globally. SCAPS-1D, widely used software for modeling and simulating solar cells, has been used and solar cell fundamental performance parameters such as open-circuited voltage (), short-circuited current density (), fill-factor() and efficiency() have been optimized in this study. Based on our simulation results, it was found that CZTS solar cell with Cd<sub>0.4</sub>Zn<sub>0.6</sub>S as buffer-layer offers the most optimal combination of high efficiency and lower toxicity in comparison to other structure investigated in our study. Although the efficiency of Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS are comparable, Cd<sub>0.4</sub>Zn<sub>0.6</sub>S is preferable to use as buffer-layer for its non-toxic property. In addition, evaluation of performance as a function of buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S, ZnS and CdS showed that optimum buffer-layer thickness for Cd<sub>0.4</sub>Zn<sub>0.6</sub>S was in the range from 50 to 150nm while ZnS offered only 50 – 75 nm. Furthermore, the temperature dependence performance parameters evaluation revealed that it is better to operate solar cell at temperature 290K for stable operation with optimum performances. This study would provide valuable insights into design and optimization of nanotechnology-based solar energy technology for minimizing global energy crisis and developing eco-friendly energy sources sustainable and simultaneously. 展开更多
关键词 thin-film Solar Cell CZTS Buffer-Layer Renewable Energy Green-House Gases Efficiency
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Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS
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作者 Rasika N. Mohottige Micheal Farndale +1 位作者 Gary S. Coombs Shahnoza Saburhhojayeva 《Open Journal of Applied Sciences》 2024年第5期1315-1329,共15页
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ... We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels. 展开更多
关键词 n-Si p-CIGS 1D-SCAPS thin-films In2S3
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All-Solid-State Thin-Film Lithium-Sulfur Batteries 被引量:8
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作者 Renming Deng Bingyuan Ke +5 位作者 Yonghui Xie Shoulin Cheng Congcong Zhang Hong Zhang Bingan Lu Xinghui Wang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2023年第5期326-338,共13页
Lithium-sulfur(Li-S)system coupled with thin-film solid electrolyte as a novel high-energy micro-battery has enormous potential for complementing embedded energy harvesters to enable the autonomy of the Internet of Th... Lithium-sulfur(Li-S)system coupled with thin-film solid electrolyte as a novel high-energy micro-battery has enormous potential for complementing embedded energy harvesters to enable the autonomy of the Internet of Things microdevice.However,the volatility in high vacuum and intrinsic sluggish kinetics of S hinder researchers from empirically integrating it into allsolid-state thin-film batteries,leading to inexperience in fabricating all-solid-state thin-film Li-S batteries(TFLSBs).Herein,for the first time,TFLSBs have been successfully constructed by stacking vertical graphene nanosheets-Li2S(VGsLi2S)composite thin-film cathode,lithium-phosphorous-oxynitride(LiPON)thin-film solid electrolyte,and Li metal anode.Fundamentally eliminating Lipolysulfide shuttle effect and maintaining a stable VGs-Li2S/LiPON interface upon prolonged cycles have been well identified by employing the solid-state Li-S system with an“unlimited Li”reservoir,which exhibits excellent longterm cycling stability with a capacity retention of 81%for 3,000 cycles,and an exceptional high temperature tolerance up to 60℃.More impressively,VGs-Li2S-based TFLSBs with evaporated-Li thin-film anode also demonstrate outstanding cycling performance over 500 cycles with a high Coulombic efficiency of 99.71%.Collectively,this study presents a new development strategy for secure and high-performance rechargeable all-solid-state thin-film batteries. 展开更多
关键词 All-solid-state thin-film batteries Li-S batteries Vertical graphene nanosheets Lithium phosphorous oxynitride Li2S
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Stability of high-salinity-enhanced foam:Surface behavior and thin-film drainage 被引量:1
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作者 Lin Sun Xue-Hui Sun +6 位作者 Yong-Chang Zhang Jun Xin Hong-Ying Sun Yi-Bo Li Wan-Fen Pu Jin-Yu Tang Bing Wei 《Petroleum Science》 SCIE EI CAS CSCD 2023年第4期2343-2353,共11页
Cocamidopropyl hydroxyl sulfobetaine(CHSB)is one of the most promising foaming agents for high-salinity reservoirs because the salt in place facilitates its foam stability,even with salinity as high as 2×10^(5)mg... Cocamidopropyl hydroxyl sulfobetaine(CHSB)is one of the most promising foaming agents for high-salinity reservoirs because the salt in place facilitates its foam stability,even with salinity as high as 2×10^(5)mg/L.However,the synergistic effects between CHSB and salt have not been fully understood.This study utilized bulk foam tests and thin-film interferometry to comprehensively investigate the macroscopic and microscopic decay processes of CHSB foams with NaCl concentrations ranging from 2.3×10^(4)to 2.1×10^(5)mg/L.We focused on the dilatational viscoelasticity and dynamic thin-film thickness to elucidate the high-salinity-enhanced foam stability.The increase in dilatational viscoelasticity and supramolecular oscillating structural force(Π_(OS))with salinity dominated the superior stability of CHSB foam.With increasing salinity,more CHSB molecules accumulated on the surface with a lower diffusion rate,leading to high dilatational moduli and surface elasticity,thus decelerating coarsening and coalescence.Meanwhile,the number density of micelles in the thin film increased with salinity,resulting in increasedΠOS.Consequently,the energy barrier for stepwise thinning intensified,and the thin-film drainage slowed.This work conduces to understand the mechanisms behind the pronounced stability of betaine foam and can promote the widespread application of foam in harsh reservoirs. 展开更多
关键词 High-salinity reservoirs Betaine foam Foam stability Dilatational viscoelasticity Disjoining pressure thin-film interferometry
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Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems
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作者 Runxiao Shi Tengteng Lei +1 位作者 Zhihe Xia Man Wong 《Journal of Semiconductors》 EI CAS CSCD 2023年第9期3-10,共8页
Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of tu... Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently. 展开更多
关键词 flexible electronics metal-oxide semiconductor thin-film transistor dual gate FLUORINATION analog front-end system sensors
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Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors
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作者 Yanxin Wang Jiye Li +4 位作者 Fayang Liu Dongxiang Luo Yunping Wang Shengdong Zhang Lei Lu 《Journal of Semiconductors》 EI CAS CSCD 2023年第9期57-61,共5页
As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this w... As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs. 展开更多
关键词 amorphous indium-gallium-zinc oxide(a-IGZO) thin-film transistors(TFTs) current stress self-heating(SH) FLUORINATION
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Enhanced efficiency of the Sb_(2)Se_(3)thin-film solar cell by the anode passivation using an organic small molecular of TCTA
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作者 Yujie Hu Zhixiang Chen +3 位作者 Yi Xiang Chuanhui Cheng Weifeng Liu Weishen Zhan 《Journal of Semiconductors》 EI CAS CSCD 2023年第8期62-67,共6页
Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode ... Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode interface of the Sb_(2)Se_(3)solar cell.We fabricated the device by the vacuum thermal evaporation,and took ITO/TCTA(3.0 nm)/Sb_(2)Se_(3)(50 nm)/C60(5.0 nm)/Alq3(3.0 nm)/Al as the device architecture,where Alq3 is the tris(8-hydroxyquinolinato)aluminum.By introducing a TCTA layer,the open-circuit voltage is raised from 0.36 to 0.42 V,and the power conversion efficiency is significantly improved from 3.2%to 4.3%.The TCTA layer not only inhibits the chemical reaction between the ITO and Sb_(2)Se_(3)during the annealing process but it also blocks the electron diffusion from Sb_(2)Se_(3)to ITO anode.The enhanced performance is mainly attributed to the suppression of the charge recombination at the anode interface. 展开更多
关键词 Sb_(2)Se_(3) thin-film solar cell PASSIVATION
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High-performance amorphous In–Ga–Zn–O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO_(2) heterojunction charge trapping stack
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作者 熊文 霍景永 +3 位作者 吴小晗 刘文军 张卫 丁士进 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第1期580-584,共5页
Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Co... Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction. 展开更多
关键词 nonvolatile memory a-IGZO thin-film transistor(TFT) charge trapping stack p-SnO/n-SnO_(2)heterojunction
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Advances in mobility enhancement of ITZO thin-film transistors:a review
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作者 Feilian Chen Meng Zhang +3 位作者 Yunhao Wan Xindi Xu Man Wong Hoi-Sing Kwok 《Journal of Semiconductors》 EI CAS CSCD 2023年第9期11-25,共15页
Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in impr... Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented. 展开更多
关键词 thin-film transistor(TFT) indium-tin-zinc oxide(ITZO)TFT MOBILITY active matrix(AM)displays
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Equivalent Circuit Analysis of an RF Integrated Inductor with Ferrite Thin-Film 被引量:1
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作者 任天令 杨晨 +3 位作者 刘锋 刘理天 王自惠 张筱 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第3期511-515,共5页
An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance (L) and quality factor (Q) of the inductor is analyze... An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance (L) and quality factor (Q) of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration. 展开更多
关键词 INDUCTOR equivalent circuit ferrite thin-film RF ICs
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Cutting force measurement based on tool embedded Ni-chrome thin-film micro-sensors
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作者 武文革 成云平 杜晓军 《Journal of Measurement Science and Instrumentation》 CAS 2014年第4期16-19,共4页
Cutting force measurement has become a crucial activity for enhancing machining process performance. This paper described the design and fabrication of embedded Ni-chrome thin-film micro-sensors in tool holders to mea... Cutting force measurement has become a crucial activity for enhancing machining process performance. This paper described the design and fabrication of embedded Ni-chrome thin-film micro-sensors in tool holders to measure the cutting force in machining operations. A Ni-chrome thin-film sensor device is embedded within a substrate structure through a dy- namic brazing process, which consists of a Ti6A14V substrate, a nickel-chromium thin-film sensor and an alumina insulating layer. The Wheatstone bridge which consists of four sensors would produce the output voltage when the thin film caused de- formation by the cutting forces. The relationship between input and output voltages was theoretically analyzed. According- ly, an in-process cutting force measurement system is established. The results show that the thin-film sensor had good lineari- ty and less mutual interference, and it is suitable for all kinds of turning forces under the measurement conditions. 展开更多
关键词 thin-film micro-sensor cutting force measurement theoretical analysis
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Dynamic Calibration of the Cutting Temperature Sensor of NiCr/NiSi Thin-film Thermocouple 被引量:16
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作者 CUI Yunxian YANG Deshun +2 位作者 JIA Ying ZENG Qiyong SUN Baoyuan 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2011年第1期73-77,共5页
In high-speed cutting, natural thermocouple, artificial thermocouple and infrared radiation temperature measurement are usually adopted for measuring cutting temperature, but these methods have difficulty in measuring... In high-speed cutting, natural thermocouple, artificial thermocouple and infrared radiation temperature measurement are usually adopted for measuring cutting temperature, but these methods have difficulty in measuring transient temperature accurately of cutting area on account of low response speed and limited cutting condition. In this paper, NiCr/NiSi thin-film thermocouples(TFTCs) are fabricated according to temperature characteristic of cutting area in high-speed cutting by means of advanced twinned microwave electro cyclotron resonance(MW-ECR) plasma source enhanced radio frequency(RF) reaction non-balance magnetron sputtering technique, and can be used for transient cutting temperature measurement. The time constants of the TFTCs with different thermo-junction film width are measured at four kinds of sampling frequency by using Ultra-CFR short pulsed laser system that established. One-dimensional unsteady heat conduction model is constructed and the dynamic performance is analyzed theoretically. It can be seen from the analysis results that the NiCr/NiSi TFTCs are suitable for measuring transient temperature which varies quickly, the response speed of TFTCs can be obviously improved by reducing the thickness of thin-film, and the area of thermo-junction has little influence on dynamic response time. The dynamic calibration experiments are made on the constructed dynamic calibration system, and the experimental results confirm that sampling frequency should be larger than 50 kHz in dynamic measurement for stable response time, and the shortest response time is 0.042 ms. Measurement methods and devices of cutting heat and cutting temperature measurement are developed and improved by this research, which provide practical methods and instruments in monitoring cutting heat and cutting temperature for research and production in high-speed machining. 展开更多
关键词 thin-film thermocouple cutting temperature sensor dynamic calibration one-dimensional unsteady heat conduction response time
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Substrate matters:The influences of substrate layers on the performances of thin-film composite reverse osmosis membranes 被引量:5
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作者 Jie Li,Mingjie Wei YongWang 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2017年第11期1676-1684,共9页
Thin-film composite(TFC) reverse osmosis(RO) membranes are playing the dominating role in desalination.Tremendous efforts have been put in the studies on the polyamide selective layers. However, the effect of the subs... Thin-film composite(TFC) reverse osmosis(RO) membranes are playing the dominating role in desalination.Tremendous efforts have been put in the studies on the polyamide selective layers. However, the effect of the substrate layers is far less concerned. In this review, we summarize the works that consider the impacts of the substrates, including pore sizes, surface hydrophilicity, on the processes of interfacial polymerization and consequently on the morphologies of the active layers and on final RO performances of the composite membranes. All the works indicate that the pore sizes and surface hydrophilicity of the substrate evidently influence the RO performances of the composite membranes. Unfortunately, we find that the observations and understandings on the substrate effect are frequently varied from case to case because of the lack of substrates with uniform pores and surface chemistries. We suggest using track-etched membranes or anodized alumina membranes having relatively uniform pores and functionalizable pore walls as model substrates to elucidate the substrate effect.Moreover, we argue that homoporous membranes derived from block copolymers have the potential to be used as substrates for the large-scale production of high-performances TFC RO membranes. 展开更多
关键词 Reverse osmosis thin-film composite Interfacial polymerization Homoporous membranes Substrate effect
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High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires 被引量:2
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作者 Zhi Tao Yi-an Huang +7 位作者 Xiang Liu Jing Chen Wei Lei Xiaofeng Wang Lingfeng Pan Jiangyong Pan Qianqian Huang Zichen Zhang 《Nano-Micro Letters》 SCIE EI CAS 2016年第3期247-253,共7页
In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se... In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of Cd Se quantum dots and reduced graphene oxide(RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 AW^(-1) and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors. 展开更多
关键词 thin-film TRANSISTOR Quantum DOTS Reduced graphene oxide ZnO NANOWIRES
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Indium-gallium-zinc-oxide thin-film transistors:Materials,devices,and applications 被引量:4
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作者 Ying Zhu Yongli He +3 位作者 Shanshan Jiang Li Zhu Chunsheng Chen Qing Wan 《Journal of Semiconductors》 EI CAS CSCD 2021年第3期18-36,共19页
Since the invention of amorphous indium-gallium-zinc-oxide(IGZO)based thin-film transistors(TFTs)by Hideo Hosono in 2004,investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electri... Since the invention of amorphous indium-gallium-zinc-oxide(IGZO)based thin-film transistors(TFTs)by Hideo Hosono in 2004,investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance,large-area uniformity,and low processing temperature.This article reviews the recent progress and major trends in the field of IGZO-based TFTs.After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs,an overview of IGZO materials and IGZO-based TFTs is given.In this part,IGZO material electron travelling orbitals and deposition methods are introduced,and the specific device structures and electrical performance are also presented.Afterwards,the recent advances of IGZO-based TFT applications are summarized,including flat panel display drivers,novel sensors,and emerging neuromorphic systems.In particular,the realization of flexible electronic systems is discussed.The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future. 展开更多
关键词 indium-gallium-zinc-oxide thin-film transistors flat panel displays SENSORS flexible electronics neuromorphic systems
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Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors 被引量:2
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作者 钱慧敏 于广 +7 位作者 陆海 武辰飞 汤兰凤 周东 任芳芳 张荣 郑有炓 黄晓明 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第7期463-467,共5页
The time and temperature dependence of threshold voltage shift under positive-bias stress(PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide(a-IGZO) thin-film transisto... The time and temperature dependence of threshold voltage shift under positive-bias stress(PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide(a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development. 展开更多
关键词 amorphous indium gallium zinc oxide thin-film transistors positive bias stress trapping model interface states
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Positive gate-bias temperature instability of ZnO thin-film transistor 被引量:2
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作者 刘玉荣 苏晶 +1 位作者 黎沛涛 姚若河 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第6期602-607,共6页
The positive gate-bias temperature instability of a radio frequency (RF) sputtered ZnO thin-film transistor (ZnO TFT) is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state cu... The positive gate-bias temperature instability of a radio frequency (RF) sputtered ZnO thin-film transistor (ZnO TFT) is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current- voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold- voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate- dielectric/channel interface. 展开更多
关键词 thin-film transistors (TFTs) zinc oxide gate-bias instability threshold-voltage shift
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