The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of the semiconductor disk laser, and analyses the heat effect by the experimentally measured photolu...The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of the semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperatures. We can see that: with increasing pump power, the thermal effect of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion layer has no enough time to rate to one of the wells, and the non-radiative recombination happens in the barrier. When the thermal effect becomes stronger, the chip will be not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer which is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs. This three QWs structure can add the quantum state of QW, increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etching equipment is also improved to control the surface unevenness to be within 50 nm.展开更多
Pumped by a 940 nm fiber-coupled diode laser, a passively mode-locked Yb:YAG thin disk oscillator was demonstrated with a semiconductor saturable absorber mirror(SESAM). 12.1 W mode-locked pulses were obtained with pu...Pumped by a 940 nm fiber-coupled diode laser, a passively mode-locked Yb:YAG thin disk oscillator was demonstrated with a semiconductor saturable absorber mirror(SESAM). 12.1 W mode-locked pulses were obtained with pulse duration of 698 fs at the repetition rate of 57.43 MHz. Measurement showed that the beam quality was close to the diffraction limit.展开更多
文摘The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of the semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperatures. We can see that: with increasing pump power, the thermal effect of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion layer has no enough time to rate to one of the wells, and the non-radiative recombination happens in the barrier. When the thermal effect becomes stronger, the chip will be not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer which is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs. This three QWs structure can add the quantum state of QW, increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etching equipment is also improved to control the surface unevenness to be within 50 nm.
基金Project supported by the National Key Basic Research Program of China(Grant No.2013CB922402)the National Major Instrument Program of China(Grant No.2012YQ120047)the National Natural Science Foundation of China(Grant No.61210017)
文摘Pumped by a 940 nm fiber-coupled diode laser, a passively mode-locked Yb:YAG thin disk oscillator was demonstrated with a semiconductor saturable absorber mirror(SESAM). 12.1 W mode-locked pulses were obtained with pulse duration of 698 fs at the repetition rate of 57.43 MHz. Measurement showed that the beam quality was close to the diffraction limit.
