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基于ICP的Ar等离子体干法刻蚀Ti/Ni/Ag薄膜
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作者 黄梦茹 卢林红 +2 位作者 郭丰杰 马奎 杨发顺 《半导体技术》 CAS 北大核心 2024年第10期893-898,共6页
在电感耦合等离子体(ICP)刻蚀工艺中,选择合适的刻蚀条件对Ti/Ni/Ag薄膜的刻蚀至关重要。使用氩气(Ar)作为刻蚀气体,研究了射频偏压功率、气体体积流量、腔体压强、刻蚀时间等多个参数对功率芯片背面Ti/Ni/Ag薄膜刻蚀深度的影响,并优化... 在电感耦合等离子体(ICP)刻蚀工艺中,选择合适的刻蚀条件对Ti/Ni/Ag薄膜的刻蚀至关重要。使用氩气(Ar)作为刻蚀气体,研究了射频偏压功率、气体体积流量、腔体压强、刻蚀时间等多个参数对功率芯片背面Ti/Ni/Ag薄膜刻蚀深度的影响,并优化刻蚀工艺参数。实验结果表明,调节射频偏压功率和Ar体积流量可以显著影响刻蚀速率,进而对薄膜的微结构进行有效调控。通过优化工艺参数,在射频偏压功率300 W、Ar体积流量40 cm^(3)/min、腔体压强1.2 Pa、刻蚀时间50 min下,芯片Ti/Ni/Ag薄膜的刻蚀深度达到283.25μm,有效提升了刻蚀效率和刻蚀精度。 展开更多
关键词 ti/Ni/Ag薄膜 电感耦合等离子体(ICP) 刻蚀深度 AR 射频偏压功率
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Influence of Annealing Time on the Microstructure and Properties of Pb(Zr_(0.53)Ti_(0.47))O_3 Thin Films 被引量:1
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作者 HUANG Ling MAO Wei +2 位作者 HUANG Zhixiong SHI Minxian MEI Qinlin 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2012年第1期88-91,共4页
The PZT thin films were prepared on (111)- Pt/Ti/SiO2/Si substrates by sol-gel method, and lead acetate [Pb(CH3COO)2], zirconium nitrate [Zr(NO3)4] were used as raw materials. The X-ray diffractometer (XRD) an... The PZT thin films were prepared on (111)- Pt/Ti/SiO2/Si substrates by sol-gel method, and lead acetate [Pb(CH3COO)2], zirconium nitrate [Zr(NO3)4] were used as raw materials. The X-ray diffractometer (XRD) and scanning electron microscopy (SEM) were used to characterize the phase structure and surface morphology of the films annealed at 650 ~C but with different holding time. Ferroelectric and dielectric properties of the films were measured by the ferroelectric tester and the precision impedance analyzer, respectively. The PZT thin films were constructed with epoxy resin as a composite structure, and the damping properties of the composite were tested by dynamic mechanical analyzer (DMA). The results show that the films annealed for 90 minutes present a dense and compact crystal arrangement on the surface; moreover, the films also achieve their best electric quality. At the same time, the largest damping loss factor of the composite constructed with the 90 mins-annealed film shows peak value of 0.9, hi^her than the pure epoxy resin. 展开更多
关键词 sol-gel method Pb(Zr0.53ti0.47)O3 thin film surface feature ferroelectric and dielectricproperty damping property
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(Zr,Ti)O_(4)基微波薄膜介质基片制备关键工艺研究
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作者 江俊俊 康建宏 +2 位作者 汪小玲 刘杨琼 赵杨军 《材料导报》 EI CAS CSCD 北大核心 2024年第S01期42-46,共5页
素坯成型工艺对微波陶瓷材料在微波薄膜介质基片产品中的工程化应用具有关键影响。目前关于(Zr,Ti)O_(4)主晶相系统微波介质陶瓷材料的研究主要集中在降低(Zr,Ti)O_(4)陶瓷烧结温度、掺杂改性优化其介电性能、Q×f值(品质因数与频... 素坯成型工艺对微波陶瓷材料在微波薄膜介质基片产品中的工程化应用具有关键影响。目前关于(Zr,Ti)O_(4)主晶相系统微波介质陶瓷材料的研究主要集中在降低(Zr,Ti)O_(4)陶瓷烧结温度、掺杂改性优化其介电性能、Q×f值(品质因数与频率的乘积)等配方优化方面。本文以(Zr,Ti)-O4基微波陶瓷材料为原材料,通过研究中介微波薄膜介质基片关键成型工艺对其物相结构、微观形貌和介电性能的影响,发现不同素坯成型工艺方式对(Zr,Ti)O_(4)基陶瓷的致密度、介质损耗值、Q×f值等影响显著。采用方式四进行薄膜介质基片的制备,获得的(Zr,Ti)O_(4)基薄膜介质基片致密度较高,气孔率低,陶瓷材料的介质损耗低至1.1×10^(-4),15 GHz下Q×f值高达50000。本文通过对不同素坯成型方式的研究,以期为(Zr,Ti)O_(4)基微波陶瓷材料薄膜介质基片的工程化应用提供理论支撑。 展开更多
关键词 (Zr ti)O_(4) 薄膜介质基片 工程化应用 微波陶瓷材料 成型工艺 介电性能
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EFFECT OF HEAT TREATMENTS ON THE MICROSTRUCTURE AND TRANSFORMATION CHARACTERISTICS OF TiNiPd SHAPE MEMORY ALLOY THIN FILMS
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作者 C.C. Zhang C.S. Yang +2 位作者 G.F. Ding S. Q. Qian J.S. Wu 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2005年第6期707-713,共7页
Microstructure and phase transformation behaviors of the film annealed at different temperatures were studied by X-ray diffractometry (XRD), transmission electron microscopy and differential scanning calorimeter (... Microstructure and phase transformation behaviors of the film annealed at different temperatures were studied by X-ray diffractometry (XRD), transmission electron microscopy and differential scanning calorimeter (DSC). Also tensile tests were examined. For increasing annealed temperature, multiple phase transformations, transformations via a B19-phase or direct martensite/austenite transformtion are observed. The TiNiPd thin film annealed at 750℃ had relatively uniform martensite/austenite transformtion and shape memory effect. Martensite/austenite transformtion was also found in strain-temperature curves. Subsequent annealing at 450℃ had minor effect on transformation temperatures of Ti-Ni-Pd thin films but resulted in more uniform transformation and improved shape memory effect. 展开更多
关键词 ti-Ni-Pd thin films MICROSTRUCTURE martensitic phase transformation shape memory effect
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Enhanced Ferroelectric Polarization in Laser-ablated Bi4Ti3O12 Thin Films by Controlling Preferred Orientation
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作者 王传彬 LUO Sijun +2 位作者 SHEN Qiang HU Mingzhe ZHANG Lianmeng 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2018年第2期268-272,共5页
Polycrystalline Bi_4Ti_3O_(12) thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt(111)/Ti/Si O_2/Si substrates by laser-ablation under different kinetic growth condit... Polycrystalline Bi_4Ti_3O_(12) thin films with various fractions of a-axis, c-axis and random orientations have been grown on Pt(111)/Ti/Si O_2/Si substrates by laser-ablation under different kinetic growth conditions. The relationship between the structure and ferroelectric property of the films was investigated, so as to explore the possibility of enhancing ferroelectric polarization by controlling the preferred orientation. The structural characterization indicated that the large growth rate and high oxygen background pressure were both favorable for the growth of non-c-axis oriented grains in the Bi_4Ti_3O_(12) thin films. The films with high fractions of a-axis and random orientations, i e, f(a-sxis) = 28.3% and f(random) = 69.6%, could be obtained at the deposition temperature of 973 K, oxygen partial pressure of 15 Pa and laser fluence of 4.6 J/cm^2, respectively. It was also noted that the variation of ferroelectric polarization was in accordance with the evolution non-c-axis orientation. A large value of remanent polarization(2 Pr = 35.5 μC/cm^2) was obtained for the Bi_4Ti_3O_(12) thin films with significant non-c-axis orientation, even higher than that of rare-earth-doped Bi_4Ti_3O_(12) films. 展开更多
关键词 Bi4ti3O12 thin film preferred orientation ferroelectric polarization laser-ablation
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Microstructure and magnetic properties of NiZn ferrite thin films prepared by sol-gel method
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作者 聂小亮 兰中文 +2 位作者 余忠 孙科 李乐中 《中国有色金属学会会刊:英文版》 CSCD 2007年第A02期854-857,共4页
Ti4+ substitution for Fe3+ in Ni0.5Zn0.5Fe2O4(NZF) ferrite thin films were realized by sol-gel method and annealing at 600 ℃ for 30 min in the air. Crystal structure and lattice constant determination was performed b... Ti4+ substitution for Fe3+ in Ni0.5Zn0.5Fe2O4(NZF) ferrite thin films were realized by sol-gel method and annealing at 600 ℃ for 30 min in the air. Crystal structure and lattice constant determination was performed by X-ray diffractometer(XRD). Surface microstructure was observed by scanning electron microscope(SEM) and atomic force microscope(AFM),and the magnetic properties were measured by vibrating sample magnetometer(VSM). XRD analyses of the samples show that Ni0.5+xZn0.5TixFe2-2xO4(NZTF) films with x varying from 0 to 0.15 in steps of 0.05 are composed of single phase with spinel structure. And the lattice parameter,particle size and the diffraction intensity of the films increase with substitution of Ti as the result of the larger radius ions entering the lattice. SEM and AFM show homogeneous grain size of each sample,but there is a few differences in grain size with different Ti-substitution contents. As the nonmagnetic Ti4+ substitutes Fe3+,both the saturation magnetization and coercivity decrease. 展开更多
关键词 镍锌铁素体薄膜 制备方法 溶胶-凝胶法 微观结构 磁性
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Effect of (Ba+Sr)/Ti ratio on dielectric and tunable properties of Ba_(0.6)Sr_(0.4)TiO_3 thin film prepared by sol-gel method
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作者 朱伟诚 彭东文 +1 位作者 程晋荣 孟中岩 《中国有色金属学会会刊:英文版》 CSCD 2006年第B01期261-265,共5页
Ba0.6Sr0.4TiO3 (BST) thin films were fabricated on Pt coated Si (100) substrates by sol-gel techniques with molar ratio of (Ba+Sr) to Ti changing from 0.76 to 1.33. The effect of (Ba+Sr)/Ti ratio deviating from the st... Ba0.6Sr0.4TiO3 (BST) thin films were fabricated on Pt coated Si (100) substrates by sol-gel techniques with molar ratio of (Ba+Sr) to Ti changing from 0.76 to 1.33. The effect of (Ba+Sr)/Ti ratio deviating from the stoichiometry on microstructure, grain growth, dielectric and tunable properties of BST thin films were investigated. TiO2 and (Ba,Sr)2TiO4 were found as a second phase at the ratios of 0.76 and 1.33, respectively. The variation of the ratio reveals more significant effect on the grain size in B-site rich samples than that in A-site rich samples. The dissipation factor decreases rapidly from 0.1 to 0.01 at 1 MHz with decreasing (Ba+Sr)/Ti ratio. The tunability increases with decreasing ratio from 1.33 to 1.05, and then decreases with decreasing ratio from 1.05 to 0.76. The film with (Ba+Sr)/Ti ratio of 1.05 has a maximum tunability of 32% and a dissipation factor of 0.03 at 1 MHz. 展开更多
关键词 Ba0.6Sr0.4tiO3薄膜 溶胶-凝胶法 制备 (钡+锶)/钛配比 介电性质
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Influence of the Annealing Temperature on the Thickness and Roughness of La<SUB>2</SUB>Ti<SUB>2</SUB>O<SUB>7</SUB>Thin Films
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作者 Mohamed A. Baba Ala Gasim +2 位作者 Abdelmoneim Mohamed Awadelgied Nafie Abdallatief Almuslet Ahmed Mohamed Salih 《Advances in Materials Physics and Chemistry》 2020年第8期189-198,共10页
In this work, the impact of the substrate annealing temperature on the thickness and roughness of La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> thin films was verified. A group of LTO T... In this work, the impact of the substrate annealing temperature on the thickness and roughness of La<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub> thin films was verified. A group of LTO Thin films was grown on Si (100) substrates successfully via pulsed laser deposition technique (PLD) at various annealing temperatures with a constant numbers of pulses and energy per pulse. Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) were used to investigate the thickness and roughness of the deposited <span style="white-space:normal;">La</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">Ti</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">7</sub> thin films. The average thickness of the thin films was decreased due to the increasing in the annealing temperature linearly;the maximum thickness was found (231 nm) when LTO thin film deposited at 500<span style="white-space:nowrap;"><span style="white-space:nowrap;">°</span><span style="white-space:nowrap;">C</span></span>. The root mean square roughness was increased linearly with increasing the substrate Temperatures. The minimum roughness was found (0.254 nm) when LTO deposited at (500<span style="white-space:nowrap;"><span style="white-space:nowrap;">°</span><span style="white-space:nowrap;">C</span></span>). From the obtained results, its clear evidence that the annealing temperature has an influence on the thickness and roughness of the LTO thin films. 展开更多
关键词 La2ti2O7 thin films PLD Perovskites Annealing Temperature
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Microstructure and magnetic properties of Ti/Co/Ti films 被引量:1
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作者 FENG Shunzhen ZHANG Yujie ZHANG Hanwei SUN Huiyuan 《Rare Metals》 SCIE EI CAS CSCD 2006年第z1期450-453,共4页
The two series of as-deposited and annealed Ti/Co/Ti thin films were deposited by magnetron sputtering onto glass substrates at room temperature. The structural and magnetic properties of the films at room temperature... The two series of as-deposited and annealed Ti/Co/Ti thin films were deposited by magnetron sputtering onto glass substrates at room temperature. The structural and magnetic properties of the films at room temperature were investigated as function of Co layer thickness. X-ray diffraction (XRD) profiles show Co nanograins are formed as the hexagonal-close-packed (hcp) structure. The perpendicular coercivity of the Ti(15 nm)/Co(30 nm)/Ti(15 nm) film annealed at 450 ℃ for 30 min is about 288 kA·m-1. 展开更多
关键词 perpendicular magnetic recording COERCIVITY ti/Co/ti thin films
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Microstructural Characteristics of Epitaxial BaSrNb_(0.3)Ti_(0.7)O_3 Film
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作者 Li'na CHENG Xiuliang MA 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2007年第4期517-520,共4页
Microstructural characteristics in the BaSrNb0.3Ti0.7O3 thin film, grown on SrTiO3 substrate by computercontrolled laser molecular beam epitaxy, were characterized by means of transmission electron microscopy (TEM).... Microstructural characteristics in the BaSrNb0.3Ti0.7O3 thin film, grown on SrTiO3 substrate by computercontrolled laser molecular beam epitaxy, were characterized by means of transmission electron microscopy (TEM). It is found that the film is single-crystallized and epitaxially grown on the SrTiO3 substrate forming a flat and distinct interface. Anti-phase domains were identified, and the crystallographic features of mismatch dislocations at the interface between film and substrate were clarified. The high conductivity of the present film was discussed from the viewpoint of Nb dopant and the nitrogen atmosphere. 展开更多
关键词 BaSrNb0.3ti0.7O3 thin film Epitaxial growth Transmission electron microscopy TEM
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Photoelectrocatalytic Oxidation of Ethinylestradiol on a Ti/TiO<sub>2</sub>Electrode: Degradation Efficiency and Search for By-Products
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作者 Karla Moreira Vieira Fabiana Maria Monteiro Paschoal +2 位作者 Maria Valnice Boldrin Zanoni Clésia Cristina Nascentes Rodinei Augusti 《Green and Sustainable Chemistry》 2014年第3期151-161,共11页
The degradation of ethinylestradiol (EE, an orally bio-active estrogen) in an aqueous-methanolic solution using a Ti/TiO2 thin-film electrode and UV radiation (a photoelectrocatalytic system) was evaluated. Hence, HPL... The degradation of ethinylestradiol (EE, an orally bio-active estrogen) in an aqueous-methanolic solution using a Ti/TiO2 thin-film electrode and UV radiation (a photoelectrocatalytic system) was evaluated. Hence, HPLC/UV analysis shows that EE (at 0.34 mmol) is totally consumed after 30 minutes of exposure to the photoelectrocatalytic system in the presence of Na2SO4 (0.1 mol·L-1) and with an applied bias potential of +1.0 V versus the Ag/AgCl reference electrode. Moreover, monitoring by direct infusion electrospray ionization mass spectrometry (ESI-MS) and SPME-GC/ MS (solid phase microextraction coupled with gas chromatography-mass spectrometry) reveals that apparently no degradation products are formed under these conditions. Hence, this study demonstrates that the photoelectrocatalytic system can be efficiently used to promote the complete degradation (and likely mineralization) of this hormone under these conditions. 展开更多
关键词 PHOTOELECTROCATALYtiC Oxidation EthinYLESTRADIOL ti/tiO2 thin-film ELECTRODE Degradation Efficiency SEARCH for By-Products
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透明TiO_2纳米管/FTO电极制备及表征 被引量:19
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作者 汤育欣 陶杰 +5 位作者 陶海军 吴涛 王玲 张焱焱 李转利 田西林 《物理化学学报》 SCIE CAS CSCD 北大核心 2008年第6期1120-1126,共7页
采用射频磁控溅射方法在透明导电玻璃(FTO)上沉积纯钛薄膜,室温条件下在H3PO4+HF电解液中通过恒压阳极氧化方法得到TiO2纳米管阵列,并通过场发射扫描电子显微镜(FESEM)、X射线衍射(XRD)、UV-Vis透射光谱以及光电化学的方法对纳米管阵列... 采用射频磁控溅射方法在透明导电玻璃(FTO)上沉积纯钛薄膜,室温条件下在H3PO4+HF电解液中通过恒压阳极氧化方法得到TiO2纳米管阵列,并通过场发射扫描电子显微镜(FESEM)、X射线衍射(XRD)、UV-Vis透射光谱以及光电化学的方法对纳米管阵列进行了表征.研究表明,在电压为20V、氧化时间为50min时,钛薄膜转化为TiO2纳米管阵列,管长约为380nm,内径约为90nm,管壁约为15nm;再经过500℃空气热处理6h之后得到锐钛矿型的TiO2纳米管/FTO透明电极,在可见光区的平均透过率约为80%,TiO2禁带宽度为3.28eV,发生了蓝移,带尾扩展到2.6eV;此外,对结晶前后的复合电极分别在暗态和紫外光下进行线性扫描和瞬态光电流测试,结果表明,结晶的电极表现出更好的光电转换性能;施加阳极电压和紫外光照射都能够促进TiO2光生载流子有效分离,使电子迅速传至导电玻璃表面通过外电路形成光电流. 展开更多
关键词 射频磁控溅射 钛薄膜 阳极氧化 tiO2纳米管阵列 透明电极
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Ti-Mo合金薄膜的储氢特性和抗氢脆能力 被引量:24
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作者 施立群 周筑颖 赵国庆 《金属学报》 SCIE EI CAS CSCD 北大核心 2000年第5期530-534,共5页
用前向反冲方法和高能非Rutherford背散射方法研究了磁控溅射制备的Ti-Mo合金薄膜的氢化性能和碳、氧污染的影响。掺Mo的Ti合金薄膜不仅能大大减低碳的污染,而且较纯钛有较高的吸氢性能.合金氢化后由δ相氢化物和... 用前向反冲方法和高能非Rutherford背散射方法研究了磁控溅射制备的Ti-Mo合金薄膜的氢化性能和碳、氧污染的影响。掺Mo的Ti合金薄膜不仅能大大减低碳的污染,而且较纯钛有较高的吸氢性能.合金氢化后由δ相氢化物和β相固溶体组成.随着Mo成分增加,合金中的β-(Ti,Mo)含量上升.当Mo含量(原子分数,%)约20时可形成单一的β相固溶体,此时氢含量(原子分数,%)仍可在45以上.Ti-Mo合金薄膜同时也具有良好的附着力和抗粉化性能。 展开更多
关键词 ti-MO合金 薄膜 氢化 氢脆 储氢特性
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溅射参数对钛膜结构及其TiO_2纳米管制备的影响 被引量:4
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作者 汤育欣 陶杰 +3 位作者 陶海军 张焱焱 李转利 田西林 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2008年第12期2186-2190,共5页
采用射频磁控溅射在玻璃基片上制备了参数不同的钛膜,并选取钛膜在HF水溶液中恒压阳极氧化得到TiO2纳米管阵列。结果表明:溅射压强从0.1Pa升至1.5Pa,薄膜致密度显著下降,溅射压强以0.5Pa为宜;溅射功率为105W,溅射速率约为0.23nm/s,溅射... 采用射频磁控溅射在玻璃基片上制备了参数不同的钛膜,并选取钛膜在HF水溶液中恒压阳极氧化得到TiO2纳米管阵列。结果表明:溅射压强从0.1Pa升至1.5Pa,薄膜致密度显著下降,溅射压强以0.5Pa为宜;溅射功率为105W,溅射速率约为0.23nm/s,溅射时间延长,薄膜厚度线性增加;衬底预热有利于提高膜的致密度和结晶性能,在衬底温度低于300℃时,钛晶粒在(002)晶面择优生长,当升温到更高温度时,(010)峰、(011)峰出现且强度升高,而(002)峰的强度降低;在室温下,当溅射功率小于150W时,薄膜具有较高密度,晶粒生长各向异性,增至167W时,钛晶粒在(002)晶面择优生长,呈明显柱状六方晶表面形态,且晶界有明显孔洞存在,致密度下降。将溅射功率为150W,工作压力为0.5Pa,溅射时间为1h条件下所制备的钛膜在氧化电压为10V、电解液为0.5%(质量分数,下同)HF水溶液中室温阳极氧化,得到高规整度的TiO2纳米管阵列。 展开更多
关键词 磁控溅射 钛薄膜 阳极氧化 tiO2纳米管阵列
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WO_x-Ti薄膜的电致变色性能 被引量:3
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作者 黄佳木 徐爱娇 +1 位作者 蔡明 杨孟锦 《重庆大学学报(自然科学版)》 EI CAS CSCD 北大核心 2007年第2期98-102,共5页
为了提高WOx薄膜的电致变色性能,笔者采用磁控反应溅射工艺,以纯钨和纯钛为靶材在ITO玻璃上制备Ti掺杂WOx电致变色薄膜,用薄膜的透射光谱和XRD衍射方法对掺杂后薄膜的电致变色性能和结构进行了分析,研究了Ti掺杂对WOx薄膜电致变色性能... 为了提高WOx薄膜的电致变色性能,笔者采用磁控反应溅射工艺,以纯钨和纯钛为靶材在ITO玻璃上制备Ti掺杂WOx电致变色薄膜,用薄膜的透射光谱和XRD衍射方法对掺杂后薄膜的电致变色性能和结构进行了分析,研究了Ti掺杂对WOx薄膜电致变色性能和微观结构的影响机理.实验表明:Ti掺杂不会降低WOx薄膜的致色效果,还能显著提高薄膜的循环寿命,缩短响应时间,提高记忆存储能力,XRD分析表明,掺杂Ti之后的WOx薄膜仍为非晶态,且非晶态有增强的趋势. 展开更多
关键词 WOx-ti薄膜 电致变色 掺杂 磁控溅射 循环寿命
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光源对TiO_2光催化剂性能的影响 被引量:11
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作者 武爱莲 郭婷 孙彦平 《太原理工大学学报》 CAS 2003年第3期291-294,共4页
采用阳极氧化法制备了 Ti O2 /Ti薄膜半导体光电极 ,并测试了该电极在 2 5 4 nm和365 nm两种光源照射下苯酚的转化过程。实验表明 :2 5 4 nm波长光源下苯酚的降解以均相光氧化反应为主 ;365 nm波长的光照下 ,以多相光催化反应为主 ,电... 采用阳极氧化法制备了 Ti O2 /Ti薄膜半导体光电极 ,并测试了该电极在 2 5 4 nm和365 nm两种光源照射下苯酚的转化过程。实验表明 :2 5 4 nm波长光源下苯酚的降解以均相光氧化反应为主 ;365 nm波长的光照下 ,以多相光催化反应为主 ,电极上加偏压能明显提高反应速率。在三电极体系中 ,用频响分析系统测试了光电极的交流阻抗图谱 ( EIS) ,分析 展开更多
关键词 tiO2/ti薄膜半导体光电极 苯酚 多相光催化反应 交流阻抗图谱 光电机 光催化剂 光源 性能
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钛掺杂对ZnO∶Ti透明导电薄膜性能的影响 被引量:7
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作者 顾锦华 汪浩 +4 位作者 兰椿 钟志有 孙奉娄 杨春勇 侯金 《人工晶体学报》 EI CAS CSCD 北大核心 2014年第4期845-851,共7页
以不同钛掺杂含量的氧化锌陶瓷靶作为溅射源材料,采用射频磁控溅射工艺在玻璃基片上沉积了Ti掺ZnO(TZO)透明导电薄膜,通过XRD、XPS、分光光度计和霍尔效应测试系统,研究了钛掺杂含量对TZO薄膜微观结构和光电特性的影响。结果表明:所有TZ... 以不同钛掺杂含量的氧化锌陶瓷靶作为溅射源材料,采用射频磁控溅射工艺在玻璃基片上沉积了Ti掺ZnO(TZO)透明导电薄膜,通过XRD、XPS、分光光度计和霍尔效应测试系统,研究了钛掺杂含量对TZO薄膜微观结构和光电特性的影响。结果表明:所有TZO薄膜均为六角纤锌矿结构,并且具有(002)择优取向,钛掺杂含量对薄膜性能具有明显的影响。当钛掺杂含量为3wt%时,TZO薄膜的结晶质量最好、可见光平均透过率最高、电阻率最低、品质因数最大(748.15 S/cm),具有最佳的光电综合性能。TZO薄膜的光学带隙随钛掺杂含量增加而单调增大。 展开更多
关键词 磁控溅射 ZnO∶ti 透明导电薄膜
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电弧离子镀多层Ti/TiN厚膜组织和力学性能研究 被引量:9
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作者 马占吉 武生虎 +2 位作者 肖更竭 任妮 赵栋才 《中国表面工程》 EI CAS CSCD 2008年第3期26-29,共4页
采用电弧离子镀技术在钛合金(Ti6Al4V)上制备了Ti/TiN/┄/Ti/TiN多层厚膜,膜层厚度为21.6μm~25.6μm,对不同Ti/TiN调制周期的多层膜物相、形貌、附着力和硬度进行了分析。结果表明:随膜层中Ti比例增加,膜层附着力增加,但膜层维氏硬度... 采用电弧离子镀技术在钛合金(Ti6Al4V)上制备了Ti/TiN/┄/Ti/TiN多层厚膜,膜层厚度为21.6μm~25.6μm,对不同Ti/TiN调制周期的多层膜物相、形貌、附着力和硬度进行了分析。结果表明:随膜层中Ti比例增加,膜层附着力增加,但膜层维氏硬度变化不大。 展开更多
关键词 电弧离子镀技术 ti/tiN多层膜 附着力 硬度
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退火处理对Ti-WO_3薄膜的结构和气敏特性的影响 被引量:4
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作者 张召涛 杨晓红 +3 位作者 马勇 孙彩芹 闫勇彦 朱绍平 《传感器与微系统》 CSCD 北大核心 2008年第8期39-41,共3页
用X射线衍射和透射电镜表征了直流磁控溅射法制得的Ti-WO3薄膜的晶型、晶格常数、粒径等。研究了退火对Ti-WO3薄膜气敏性质和微结构的影响,找出了最佳退火温度和工作温度;并对机理进行了分析。结果表明:450℃退火的薄膜的气敏效应很好,... 用X射线衍射和透射电镜表征了直流磁控溅射法制得的Ti-WO3薄膜的晶型、晶格常数、粒径等。研究了退火对Ti-WO3薄膜气敏性质和微结构的影响,找出了最佳退火温度和工作温度;并对机理进行了分析。结果表明:450℃退火的薄膜的气敏效应很好,最佳工作温度在150℃左右; 展开更多
关键词 直流磁控溅射 ti-WO3薄膜 退火 气敏特性
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用掠入射XAFS方法研究Ti/Ni/Ti纳米薄膜的界面结构 被引量:1
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作者 于海生 黄宇营 +5 位作者 魏向军 姜政 王建强 顾颂琦 张硕 高星 《核技术》 CAS CSCD 北大核心 2011年第7期489-493,共5页
在上海光源BL14W1线站建立了掠入射XAFS(GI-XAFS)方法,利用GI-XAFS方法并结合X射线反射(XRR)研究了直流磁控溅射方法生长在W/Si基底上的Ti/Ni/Ti纳米薄膜的界面结构随Ni层厚度的变化。结果表明,随着薄膜厚度的增加,Ni/Ti界面层间的相互... 在上海光源BL14W1线站建立了掠入射XAFS(GI-XAFS)方法,利用GI-XAFS方法并结合X射线反射(XRR)研究了直流磁控溅射方法生长在W/Si基底上的Ti/Ni/Ti纳米薄膜的界面结构随Ni层厚度的变化。结果表明,随着薄膜厚度的增加,Ni/Ti界面层间的相互扩散有所增加,Ni层厚度为5 nm时,Ni/Ti界面层间的扩散厚度为2 nm左右;Ni层厚度为1 nm时,由于无序度较大,Ni-Ni配位和Ni-Ti配位的键长有所收缩;随着薄膜Ni层厚度的减小,无序度逐渐增加,Ni-Ti配位增加,Ni-Ni配位减少。 展开更多
关键词 掠入射 X射线吸收精细结构(XAFS) ti/Ni/ti薄膜 X射线反射(XRR)
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