The influence of a gradient interlayer on the residual stress and cracking in TiN thin films was studied as a function of the thickness of gradient interlayer. Both X ray in situ tensile testing and grazing method wer...The influence of a gradient interlayer on the residual stress and cracking in TiN thin films was studied as a function of the thickness of gradient interlayer. Both X ray in situ tensile testing and grazing method were used to measure the residual stress in thin films. In TiN films, there exists a residual stress of 10 GPa, which can be remarkably decreased by a gradient interlayer between film and substrate. The cracking behavior of films after tension shows that the crack of film/substrate system begins at interface between film and substrate.展开更多
Single(200)-oriented TiN thin films were deposited on quartz substrate by direct current(DC) magnetron reactive sputtering process at a wide range of substrate temperature from 200 to 600 ℃.The effects of sputtering ...Single(200)-oriented TiN thin films were deposited on quartz substrate by direct current(DC) magnetron reactive sputtering process at a wide range of substrate temperature from 200 to 600 ℃.The effects of sputtering pressure and substrate temperature on the crystalline nature,morphology,electrical and optical properties of the deposited thin films were analyzed by X-ray diffraction(XRD),atomic force microscopy(AFM),four-point resistivity test system and ultraviolet visible near-infrared(UV-Vis-NIR) spectroscopy,respectively.The results show that single(200)-oriented TiN thin films can be obtained at a wide range of substrate temperature from 200 to 600 ℃ with the grain size increasing from 35.9 to 64.5 nm.The resistivity of the product is as low as95 μΩ·cm,and the value of the optical reflectance is above68 % in the near-infrared(NIR) range of 760-1500 nm.展开更多
Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO acti...Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.展开更多
Several nc-TiN/a-TiB2 thin films comprised of nanocrystalline (nc-) TiN and amor phous (a-) TiB2 phases were deposited on Si(100) at room temperature by reactive unbalanced dc magnetron sputtering, followed by vacuum ...Several nc-TiN/a-TiB2 thin films comprised of nanocrystalline (nc-) TiN and amor phous (a-) TiB2 phases were deposited on Si(100) at room temperature by reactive unbalanced dc magnetron sputtering, followed by vacuum annealed at 400, 600, 80 0 and 1000℃ for 1h, respectively. Effects of B content on microstructure, mecha nical behaviors and thermal microstructure stability have been investigated by X -ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and nanoindentation measurements. The results indicated that B addition greatly affected both microstructure and mechanical behavior of nc-Ti N/a-TiB2 thin films. With increasing B content the grain size decreased. A maxim um hardness value of about 33GPa was obtained at B content of about 19at.%. The improved mechanical properties of nc-TiN/a-TiB2 films with the addition of B int o TiN were attributed to their densified microstructure with development of fine grain size. Only addition of sufficient B could restrain grain growth during an nealing. High B content resulted in high microstructure stability. The crystalli zation of amorphous matrix occurred at about 800℃, forming TiB or TiB2 crystall ite, depending on B content. Before that no change in bonding configuration was found.展开更多
Resistive RAM is a promising, relatively new type of memory with fast switching characteristics. Metal chalcogenide films have been used as the amorphous semiconductor layer in these types of devices. The amount of cr...Resistive RAM is a promising, relatively new type of memory with fast switching characteristics. Metal chalcogenide films have been used as the amorphous semiconductor layer in these types of devices. The amount of crystallinity present in the films may be important for both reliable operation and increased longevity of the devices. Germanium sulfide films can be used for these devices, and a possible way to tune the crystalline content of the films is by substituting Sn for some of the Ge atoms in the film. Thin films of GexSnySz containing varying amounts of tin were deposited in a plasma enhanced chemical vapor deposition reactor. Films with 2%, 8%, 15%, 26%, and 34% atomic percentage Sn were deposited to determine crystallinity and structural information with XRD and Raman spectroscopy. Based on these depositions it was determined that at about 8% Sn content and below, the films were largely amorphous, and at about 26% Sn and above, they appeared to be largely crystalline. At 15% Sn composition, which is between 8% and 26%, the film is more a mixture of the two phases. Based on this information, current-voltage (IV) curves of simple memory switching devices were constructed at 5% Sn (in the amorphous region), at 25% Sn (in the crystalline region), and at 15% (in the mixed region). Based on the IV curves from these devices, the 15% composition gave the best overall switching behavior suggesting that a certain degree of order in the semiconductor layer is important for RRAM devices.展开更多
In this paper, an elastic recoil detection analysis method is described using 35 MeV <sup>35</sup>Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other...In this paper, an elastic recoil detection analysis method is described using 35 MeV <sup>35</sup>Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon.展开更多
Tin sulfide （SnS） thin films were prepared by electrodeposition onto fluorine-doped tin oxide （FTO） glass substrates using an aqueous solution containing SnCl2 and Na2S2O3 at various deposition potentials （L） an...Tin sulfide （SnS） thin films were prepared by electrodeposition onto fluorine-doped tin oxide （FTO） glass substrates using an aqueous solution containing SnCl2 and Na2S2O3 at various deposition potentials （L） and bath concentrations. The pH value and temperature of the solution were kept constant. The deposited films were characterized using X-ray diffraction （XRD）, field-emission scanning electron microscopy （FESEM）, photoluminescence （PL）, and ultraviolet-visible （UV-Vis） spectroscopy. The FESEM images demonstrated that changes in the deposition potential （E） and solution concentration led to marked changes in the morphology of the deposited SnS films. Energy-dispersive X-ray analysis （EDXA） results showed that the SrdS atomic ratio strongly depended on both the solution concentration and the deposition potential. To obtain an SrdS atomic ratio approximately equal to l, the optimal Sn2＋/S2O2- 3 molar ratio and E parameter were 1/8 and -1.0 V, respectively. The XRD patterns showed that the synthesized SnS was obviously polycrystalline, with an orthorhombic structure. The effects of the variations of bath concentration and deposition potential on the band-gap energy （Eg） were studied using PL and UV-Vis experiments. The PL spectra of all the SnS films contained two peaks in the visible region and one peak in the infrared （IR） region. The UV-Vis spectra showed that the optical band-gap energy varies from 1.21 to 1.44 eV.展开更多
The Pr and Ta separately doped FTO（10 at.% F incorporated Sn O2） films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO（FTO） films are inv...The Pr and Ta separately doped FTO（10 at.% F incorporated Sn O2） films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO（FTO） films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction（XRD） measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has（200） preferential orientation, but this orientation changes to（211） direction with Pr and Ta doping ratio increasing. Atomic force microscopy（AFM） and scanning electron microscopy（SEM） analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible（UV-Vis） spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications.展开更多
Oil-soluble In2O3 nanoparticles and In2O3-SnO2 nanocomposites were prepared in oleylamine via decomposition of metal acety- lacetonate precursors. Thin films of In2O3 and In2O3-SnO2 were obtained by spin-coating solut...Oil-soluble In2O3 nanoparticles and In2O3-SnO2 nanocomposites were prepared in oleylamine via decomposition of metal acety- lacetonate precursors. Thin films of In2O3 and In2O3-SnO2 were obtained by spin-coating solutions of the oil-soluble In2O3 nanoparticles and In2O3-SnO2 nanocomposites onto substrates and then calcining them. Transmission electron microspectroscopy, scanning electron mi- crospectroscopy, atomic force microspectroscopy, X-ray diffraction, ultraviolet-visible absorption, and photoluminescence spectroscopy were used to investigate the properties of the nanoparticles and thin films. The In2O3 nanoparticles were cubic-phased spheres with a diame- ter of-8 nm; their spectra exhibited a broad emission peak centered at 348 nm. The In2O3-SnO2 nanocomposites were co-particles composed of smaller In2O3 particles and larger SnO2 particles; their spectra exhibited a broad emission peak at 355 nm. After the In2O3-SnO2 nano- composites were calcined at 400℃, the obtained thin films were highly transparent and conductive, with a thickness of 30-40 nm; the sur- faces of the thin films were smooth and crack-free.展开更多
文摘The influence of a gradient interlayer on the residual stress and cracking in TiN thin films was studied as a function of the thickness of gradient interlayer. Both X ray in situ tensile testing and grazing method were used to measure the residual stress in thin films. In TiN films, there exists a residual stress of 10 GPa, which can be remarkably decreased by a gradient interlayer between film and substrate. The cracking behavior of films after tension shows that the crack of film/substrate system begins at interface between film and substrate.
基金the National Natural Science Foundation of China and External science and technology cooperation program of Jiangxi Province(Nos.11364032 and 20151BDH80030)。
文摘Single(200)-oriented TiN thin films were deposited on quartz substrate by direct current(DC) magnetron reactive sputtering process at a wide range of substrate temperature from 200 to 600 ℃.The effects of sputtering pressure and substrate temperature on the crystalline nature,morphology,electrical and optical properties of the deposited thin films were analyzed by X-ray diffraction(XRD),atomic force microscopy(AFM),four-point resistivity test system and ultraviolet visible near-infrared(UV-Vis-NIR) spectroscopy,respectively.The results show that single(200)-oriented TiN thin films can be obtained at a wide range of substrate temperature from 200 to 600 ℃ with the grain size increasing from 35.9 to 64.5 nm.The resistivity of the product is as low as95 μΩ·cm,and the value of the optical reflectance is above68 % in the near-infrared(NIR) range of 760-1500 nm.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61290305 and 91021020)the Natural Science Foundation of Zhejiang Province,China (Grant No.Z6100117)
文摘Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.
文摘Several nc-TiN/a-TiB2 thin films comprised of nanocrystalline (nc-) TiN and amor phous (a-) TiB2 phases were deposited on Si(100) at room temperature by reactive unbalanced dc magnetron sputtering, followed by vacuum annealed at 400, 600, 80 0 and 1000℃ for 1h, respectively. Effects of B content on microstructure, mecha nical behaviors and thermal microstructure stability have been investigated by X -ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and nanoindentation measurements. The results indicated that B addition greatly affected both microstructure and mechanical behavior of nc-Ti N/a-TiB2 thin films. With increasing B content the grain size decreased. A maxim um hardness value of about 33GPa was obtained at B content of about 19at.%. The improved mechanical properties of nc-TiN/a-TiB2 films with the addition of B int o TiN were attributed to their densified microstructure with development of fine grain size. Only addition of sufficient B could restrain grain growth during an nealing. High B content resulted in high microstructure stability. The crystalli zation of amorphous matrix occurred at about 800℃, forming TiB or TiB2 crystall ite, depending on B content. Before that no change in bonding configuration was found.
文摘Resistive RAM is a promising, relatively new type of memory with fast switching characteristics. Metal chalcogenide films have been used as the amorphous semiconductor layer in these types of devices. The amount of crystallinity present in the films may be important for both reliable operation and increased longevity of the devices. Germanium sulfide films can be used for these devices, and a possible way to tune the crystalline content of the films is by substituting Sn for some of the Ge atoms in the film. Thin films of GexSnySz containing varying amounts of tin were deposited in a plasma enhanced chemical vapor deposition reactor. Films with 2%, 8%, 15%, 26%, and 34% atomic percentage Sn were deposited to determine crystallinity and structural information with XRD and Raman spectroscopy. Based on these depositions it was determined that at about 8% Sn content and below, the films were largely amorphous, and at about 26% Sn and above, they appeared to be largely crystalline. At 15% Sn composition, which is between 8% and 26%, the film is more a mixture of the two phases. Based on this information, current-voltage (IV) curves of simple memory switching devices were constructed at 5% Sn (in the amorphous region), at 25% Sn (in the crystalline region), and at 15% (in the mixed region). Based on the IV curves from these devices, the 15% composition gave the best overall switching behavior suggesting that a certain degree of order in the semiconductor layer is important for RRAM devices.
文摘In this paper, an elastic recoil detection analysis method is described using 35 MeV <sup>35</sup>Cl as incident ions. This method can determine and profile simultaneously H, D, He, C and O or in the other case, H, C, N and O. The depth resolution for the elements heavier than He is better than 20 nm. It has been applied to study the Co/Si and TiN thin films, and the depth profiles of He implanted in monocrystal silicon.
文摘Tin sulfide （SnS） thin films were prepared by electrodeposition onto fluorine-doped tin oxide （FTO） glass substrates using an aqueous solution containing SnCl2 and Na2S2O3 at various deposition potentials （L） and bath concentrations. The pH value and temperature of the solution were kept constant. The deposited films were characterized using X-ray diffraction （XRD）, field-emission scanning electron microscopy （FESEM）, photoluminescence （PL）, and ultraviolet-visible （UV-Vis） spectroscopy. The FESEM images demonstrated that changes in the deposition potential （E） and solution concentration led to marked changes in the morphology of the deposited SnS films. Energy-dispersive X-ray analysis （EDXA） results showed that the SrdS atomic ratio strongly depended on both the solution concentration and the deposition potential. To obtain an SrdS atomic ratio approximately equal to l, the optimal Sn2＋/S2O2- 3 molar ratio and E parameter were 1/8 and -1.0 V, respectively. The XRD patterns showed that the synthesized SnS was obviously polycrystalline, with an orthorhombic structure. The effects of the variations of bath concentration and deposition potential on the band-gap energy （Eg） were studied using PL and UV-Vis experiments. The PL spectra of all the SnS films contained two peaks in the visible region and one peak in the infrared （IR） region. The UV-Vis spectra showed that the optical band-gap energy varies from 1.21 to 1.44 eV.
文摘The Pr and Ta separately doped FTO（10 at.% F incorporated Sn O2） films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO（FTO） films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction（XRD） measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has（200） preferential orientation, but this orientation changes to（211） direction with Pr and Ta doping ratio increasing. Atomic force microscopy（AFM） and scanning electron microscopy（SEM） analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible（UV-Vis） spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications.
基金financial support from the National Natural Science Foundation of China (No. 21073012)
文摘Oil-soluble In2O3 nanoparticles and In2O3-SnO2 nanocomposites were prepared in oleylamine via decomposition of metal acety- lacetonate precursors. Thin films of In2O3 and In2O3-SnO2 were obtained by spin-coating solutions of the oil-soluble In2O3 nanoparticles and In2O3-SnO2 nanocomposites onto substrates and then calcining them. Transmission electron microspectroscopy, scanning electron mi- crospectroscopy, atomic force microspectroscopy, X-ray diffraction, ultraviolet-visible absorption, and photoluminescence spectroscopy were used to investigate the properties of the nanoparticles and thin films. The In2O3 nanoparticles were cubic-phased spheres with a diame- ter of-8 nm; their spectra exhibited a broad emission peak centered at 348 nm. The In2O3-SnO2 nanocomposites were co-particles composed of smaller In2O3 particles and larger SnO2 particles; their spectra exhibited a broad emission peak at 355 nm. After the In2O3-SnO2 nano- composites were calcined at 400℃, the obtained thin films were highly transparent and conductive, with a thickness of 30-40 nm; the sur- faces of the thin films were smooth and crack-free.
