Two-dimensional van der Waals(2D vdW)material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties.In this study,we demonstrate graphene(...Two-dimensional van der Waals(2D vdW)material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties.In this study,we demonstrate graphene(Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors(FET).Unlike conventional FET operation,our Gr-bridge devices exhibit nonclassical transfer characteristics(humped transfer curve),thus possessing a negative differential transconductance.These phenomena are interpreted as the operating behavior in two series-connected FETs,and they result from the gate-tunable contact capacity of the Gr-bridge layer.Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow-and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics.Thus,we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.展开更多
In this paper, we present the design of a 285 GHz tripler realized by planar Schottky diode. The complete multiplying circuit and diodes is mounted on 50 um thick quartz substrate. The measured result shows that outpu...In this paper, we present the design of a 285 GHz tripler realized by planar Schottky diode. The complete multiplying circuit and diodes is mounted on 50 um thick quartz substrate. The measured result shows that output power is achieved above 3.1 dBm in the range from 280 GHz to 290 GHz with a constantly 20 dBm driven power across the band. The peak power is 4 dBm in 285.6 GHz. .展开更多
A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteri...A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteristic test shows that the output i dB compression point is about -8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.展开更多
With a lot of millimeter-wave(mm-Wave)applications being issued,wideband circuits and systems have attracted much attention because of their strong applicability and versatility.In this paper,four transformer-based ul...With a lot of millimeter-wave(mm-Wave)applications being issued,wideband circuits and systems have attracted much attention because of their strong applicability and versatility.In this paper,four transformer-based ultra-wideband mm-Wave circuits demonstrated in CMOS technologies are reviewed from theoretical analysis,implementation,to performance.First,we introduce a mm-Wave low-noise amplifier with transformer-based Gm-boosting and pole-tuning techniques.It achieves wide operating bandwidth,low noise figure,and good gain performance.Second,we review an injection-current-boosting technique which can significantly increase the locking range of mm-Wave injection-locked frequency triplers.Based on the injectionlocked principle,we also discuss an ultra-wideband mm-Wave divider with the transformer-based high-order resonator.Finally,an E-band up-conversion mixer is presented;using the two-path transconductance stage and transformer-based load,it obtains good linearity and a large operating band.展开更多
This paper presents a wide locking range and low DC power injection-locked frequency tripler for Kband frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection ...This paper presents a wide locking range and low DC power injection-locked frequency tripler for Kband frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection signal path and the bias current so that the third harmonic of the injection signal can be maximized to enlarge the locking range. Meanwhile, a 2-bit digital control capacity array is used to further increase the output frequency locking range. It is implemented in a 130-nm CMOS process and occupies a chip area of 0.7 ×0.8 mm^2 without pads. The measured results show that the proposed ILFT can achieve a whole locking range from 18 to21 GHz under the input signal of 4 dBm and the core circuit dissipates only 4 m W of DC power from a 0.8 V supply voltage. The measured phase noise degradation from that of the injection signal is only 10 dB at 1 MHz offset.展开更多
A frequency-multiplied source at the terahertz band using discrete planar Schottky diodes, which is a critical element in heterodyne instruments, has been studied by some domestic research institutions in recent years...A frequency-multiplied source at the terahertz band using discrete planar Schottky diodes, which is a critical element in heterodyne instruments, has been studied by some domestic research institutions in recent years. Besides the design method, there are still many crucial problems that must be taken into consideration in the design. This article mainly discuss three aspects based on the measured data of a 225 GHz tripler that we designed. Firstly, the accuracy of the diode model concerns the reliability of the simulation results. According to the Spice parameters and the measured results, the physical size and the DC parameter of the Schottky diode can be corrected until there is a good consistency between the simulated and measured results. Secondly, the heat accumulation happens to the Schottky junction when the high input power is added. A steady-state thermal simulation is done and the results show that the hottest temperature is about 140℃ with 250 mW input power, which is safe to the diode. Lastly, some non-ideal factors are brought during the assembly process such as the uncertainty in the conductive adhesive shape and location deviation of the circuit. Furthermore, the effect on the performance of the frequency multiplier is calculated in this work.展开更多
基金Y.T.L.acknowledges the financial support from the National Research Foundation of Korea(NRF)(No.NRF-2021R1C1C1005235)D.K.H.acknowledges the financial support from the Korea Institute of Science and Technology(KIST)Institution Program(No.2E31532).
文摘Two-dimensional van der Waals(2D vdW)material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties.In this study,we demonstrate graphene(Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors(FET).Unlike conventional FET operation,our Gr-bridge devices exhibit nonclassical transfer characteristics(humped transfer curve),thus possessing a negative differential transconductance.These phenomena are interpreted as the operating behavior in two series-connected FETs,and they result from the gate-tunable contact capacity of the Gr-bridge layer.Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow-and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics.Thus,we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.
文摘In this paper, we present the design of a 285 GHz tripler realized by planar Schottky diode. The complete multiplying circuit and diodes is mounted on 50 um thick quartz substrate. The measured result shows that output power is achieved above 3.1 dBm in the range from 280 GHz to 290 GHz with a constantly 20 dBm driven power across the band. The peak power is 4 dBm in 285.6 GHz. .
基金Supported by the National High-Technology Research and Development Program of China under Grant No 2011AA010203the National Basic Research Program of China under Grant Nos 2011CB201704 and 2010CB327502the National Natural Science Foundation of China under Grant Nos 61434006 and 61106074
文摘A 330-500 GHz zero-biased broadband monolithic integrated tripler is reported. The measured results show that the maximum efficiency and the maximum output power are 2% and 194μW at 348 GHz. The saturation characteristic test shows that the output i dB compression point is about -8.5 dBm at 334 GHz and the maximum efficiency is obtained at the point, which is slightly below the 1 dB compression point. Compared with the conventional hybrid integrated circuit, a major advantage of the monolithic integrated circuit is the significant improvement of reliability and consistency. In this work, a terahertz monolithic frequency multiplier at this band is designed and fabricated.
基金supported by the National Natural Science Foundation of China(Nos.61804024,61874020,and 61771115)the National Science and Technology Major Project of the Ministry of Science and Technology of China(No.2018ZX03001008)。
文摘With a lot of millimeter-wave(mm-Wave)applications being issued,wideband circuits and systems have attracted much attention because of their strong applicability and versatility.In this paper,four transformer-based ultra-wideband mm-Wave circuits demonstrated in CMOS technologies are reviewed from theoretical analysis,implementation,to performance.First,we introduce a mm-Wave low-noise amplifier with transformer-based Gm-boosting and pole-tuning techniques.It achieves wide operating bandwidth,low noise figure,and good gain performance.Second,we review an injection-current-boosting technique which can significantly increase the locking range of mm-Wave injection-locked frequency triplers.Based on the injectionlocked principle,we also discuss an ultra-wideband mm-Wave divider with the transformer-based high-order resonator.Finally,an E-band up-conversion mixer is presented;using the two-path transconductance stage and transformer-based load,it obtains good linearity and a large operating band.
基金supported by the National Natural Science Foundation of China(No.61376037)the National Twelve-Five Project(No.513***)
文摘This paper presents a wide locking range and low DC power injection-locked frequency tripler for Kband frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection signal path and the bias current so that the third harmonic of the injection signal can be maximized to enlarge the locking range. Meanwhile, a 2-bit digital control capacity array is used to further increase the output frequency locking range. It is implemented in a 130-nm CMOS process and occupies a chip area of 0.7 ×0.8 mm^2 without pads. The measured results show that the proposed ILFT can achieve a whole locking range from 18 to21 GHz under the input signal of 4 dBm and the core circuit dissipates only 4 m W of DC power from a 0.8 V supply voltage. The measured phase noise degradation from that of the injection signal is only 10 dB at 1 MHz offset.
文摘A frequency-multiplied source at the terahertz band using discrete planar Schottky diodes, which is a critical element in heterodyne instruments, has been studied by some domestic research institutions in recent years. Besides the design method, there are still many crucial problems that must be taken into consideration in the design. This article mainly discuss three aspects based on the measured data of a 225 GHz tripler that we designed. Firstly, the accuracy of the diode model concerns the reliability of the simulation results. According to the Spice parameters and the measured results, the physical size and the DC parameter of the Schottky diode can be corrected until there is a good consistency between the simulated and measured results. Secondly, the heat accumulation happens to the Schottky junction when the high input power is added. A steady-state thermal simulation is done and the results show that the hottest temperature is about 140℃ with 250 mW input power, which is safe to the diode. Lastly, some non-ideal factors are brought during the assembly process such as the uncertainty in the conductive adhesive shape and location deviation of the circuit. Furthermore, the effect on the performance of the frequency multiplier is calculated in this work.
