If yOU stock your reflgeratot with fruit iuices,you may be setting your kids原译 假如你往冰箱里塞满果汁,你就可能给孩子带来肥胖麻烦。 改译 假如你往冰箱里塞满了果汁饮料,那么你就可能让你的孩子加入减肥大军的行列。 原句非...If yOU stock your reflgeratot with fruit iuices,you may be setting your kids原译 假如你往冰箱里塞满果汁,你就可能给孩子带来肥胖麻烦。 改译 假如你往冰箱里塞满了果汁饮料,那么你就可能让你的孩子加入减肥大军的行列。 原句非常形象,我们的译笔能否也“松弛”一点,略添幽默?展开更多
Two-dimensional(2D)Ruddlesden-Popper(RP)halide perovskites with diverse structures and properties have drawn increasing attention due to their promising optoelectronic applications.Recently,a new all-inorganic Cs_(2)P...Two-dimensional(2D)Ruddlesden-Popper(RP)halide perovskites with diverse structures and properties have drawn increasing attention due to their promising optoelectronic applications.Recently,a new all-inorganic Cs_(2)Pb(SCN)_(2)Br_(2) has been reported that opens up new potential for the development of 2D RP perovskites.However,recent reports of unusual dual emissions and two-edge absorption in Cs_(2)Pb(SCN)_(2)Br_(2) have generated intense debate about its origin and remains controversial.Here,by combining continuous pressure tuning with in situ diagnostics,we have unambiguously revealed the underlying mechanisms that the 2D Cs_(2)Pb(SCN)_(2)Br_(2) exhibits an intrinsic blue emission at 2.66 eV and an absorption edge close to the emission peak.While the gradually formed CsPbBr_(3) is responsible for the green emission at 2.33 eV with the absorption shoulder at 2.41 eV.Furthermore,by fitting the temperature-dependent intensity of the intrinsic blue emission,we have determined the corrected value of exciton binding energy for 2D Cs_(2)Pb(SCN)_(2)Br_(2) to be 90 meV.Intriguingly,an emission enhancement of 2.5 times is achieved in Cs_(2)Pb(SCN)_(2)Br_(2) under a mild pressure within 0.8 GPa,caused by the pressuresuppressed exciton-phonon interaction.This work not only elucidates the origin of the dual emissions and two-edge absorption in Cs_(2)Pb(SCN)_(2)Br_(2),but it also provides a potential means to regulate and optimize the optoelectronic properties of 2D perovskites.展开更多
Hot carrier effect（HCE） is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS.Based on the chemical reaction equation of HCE degradation and a geometry ...Hot carrier effect（HCE） is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS.Based on the chemical reaction equation of HCE degradation and a geometry dependent reaction diffusion equation,a HCE degradation model for annular NMOS and two-edged NMOS is proposed.According to this model,we conclude that the time exponent of the threshold voltage degradation depends on the configuration of the gate,and annular NMOS has more serious HCE degradation than two-edged NMOS.The design,fabrication and HCE experiments of these NMOS in a 0.5-μm PD SOI process verify the correctness of the conclusion.展开更多
文摘If yOU stock your reflgeratot with fruit iuices,you may be setting your kids原译 假如你往冰箱里塞满果汁,你就可能给孩子带来肥胖麻烦。 改译 假如你往冰箱里塞满了果汁饮料,那么你就可能让你的孩子加入减肥大军的行列。 原句非常形象,我们的译笔能否也“松弛”一点,略添幽默?
基金supported by the National Natural Science Foundation of China(NSFC)(grant nos.22275004,U1930401,and 52325309)the Shanghai Science and Technology Committee(grant no.22JC1410300)+2 种基金the Shanghai Key Laboratory of Novel Extreme Condition Materials(grant no.22dz2260800)supported by the NSFC(grant no.22275077).Q.H.is supported by the CAEP Research(grant no.CX20210048)the Tencent Xplorer Prize(grant no.XPLORER-2020-1013).
文摘Two-dimensional(2D)Ruddlesden-Popper(RP)halide perovskites with diverse structures and properties have drawn increasing attention due to their promising optoelectronic applications.Recently,a new all-inorganic Cs_(2)Pb(SCN)_(2)Br_(2) has been reported that opens up new potential for the development of 2D RP perovskites.However,recent reports of unusual dual emissions and two-edge absorption in Cs_(2)Pb(SCN)_(2)Br_(2) have generated intense debate about its origin and remains controversial.Here,by combining continuous pressure tuning with in situ diagnostics,we have unambiguously revealed the underlying mechanisms that the 2D Cs_(2)Pb(SCN)_(2)Br_(2) exhibits an intrinsic blue emission at 2.66 eV and an absorption edge close to the emission peak.While the gradually formed CsPbBr_(3) is responsible for the green emission at 2.33 eV with the absorption shoulder at 2.41 eV.Furthermore,by fitting the temperature-dependent intensity of the intrinsic blue emission,we have determined the corrected value of exciton binding energy for 2D Cs_(2)Pb(SCN)_(2)Br_(2) to be 90 meV.Intriguingly,an emission enhancement of 2.5 times is achieved in Cs_(2)Pb(SCN)_(2)Br_(2) under a mild pressure within 0.8 GPa,caused by the pressuresuppressed exciton-phonon interaction.This work not only elucidates the origin of the dual emissions and two-edge absorption in Cs_(2)Pb(SCN)_(2)Br_(2),but it also provides a potential means to regulate and optimize the optoelectronic properties of 2D perovskites.
基金Project supported by the Key Program of the National Natural Science Foundation of China(No.60836004)the Ministry of Education Creative Team Research Project,China.
文摘Hot carrier effect（HCE） is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS.Based on the chemical reaction equation of HCE degradation and a geometry dependent reaction diffusion equation,a HCE degradation model for annular NMOS and two-edged NMOS is proposed.According to this model,we conclude that the time exponent of the threshold voltage degradation depends on the configuration of the gate,and annular NMOS has more serious HCE degradation than two-edged NMOS.The design,fabrication and HCE experiments of these NMOS in a 0.5-μm PD SOI process verify the correctness of the conclusion.
