In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we ana...In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we analyze the challenges of developing GaN-based ultraviolet laser diodes,and the approaches to improve the performance of ultraviolet laser diode are reviewed.With these techniques,room temperature(RT)pulsed oscillation of AlGaN UVA(ultraviolet A)LD has been realized,with a lasing wavelength of 357.9 nm.Combining with the suppression of thermal effect,the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.展开更多
Here we developed a novel wavelength-switchable visible continuous-wave(CW)Pr^(3+):YLF laser around 670 nm.In single-wavelength laser operations,the maximum output powers of 2.60 W,1.26 W,and 0.21 W,the maximum slope ...Here we developed a novel wavelength-switchable visible continuous-wave(CW)Pr^(3+):YLF laser around 670 nm.In single-wavelength laser operations,the maximum output powers of 2.60 W,1.26 W,and 0.21 W,the maximum slope efficiencies of 34.7%,27.3%,and 12.3%were achieved with good beam qualities(M^(2)<1.6)at 670.4 nm,674.2 nm,and 678.9 nm,respectively.Record-high output power(2.6 W)and record-high slope efficiency(34.7%)were achieved for the Pr^(3+):YLF laser operation at 670.4 nm.This is also the first demonstration of longer-wavelength peaks beyond 670 nm in the^(3)P_(1)→^(3)F_(3)transition of Pr^(3+):YLF.In multi-wavelength laser operations,the dual-wavelength lasings,including 670.1/674.8 nm,670.1/679.1 nm,and 675.0/679.4 nm,were obtained by fine adjustment of one/two etalons within the cavity.Furthermore,the triple-wavelength lasings,e.g.672.2/674.2/678.6 nm and 670.4/674.8/679.4 nm,were successfully demonstrated.Moreover,both the first-order vortex lasers(LG_(0)^(+1)and LG_(0)^(-1)modes)at 670.4 nm were obtained by off-axis pumping.展开更多
We present a compact injection-locking diode laser module to generate 671 nm laser light with a high output power up to 150 m W.The module adopts a master-slave injection-locking scheme,and the injection-locking state...We present a compact injection-locking diode laser module to generate 671 nm laser light with a high output power up to 150 m W.The module adopts a master-slave injection-locking scheme,and the injection-locking state is monitored using the transmission spectrum from a Fabry-Perot interferometer.Beat frequency spectrum measurement shows that the injection-locked slave laser has no other frequency components within the 150-MHz detection bandwidth.It is found that without additional electronic feedback,the slave laser can follow the master laser over a wide range of 6 GHz.All the elements of the module are commercially available,which favors fast construction of a complete 671-nm laser system for the preparation of cold^(6)Li atoms with only one research-grade diode laser as the seeding source.展开更多
The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calcu-lated using the 2D finite difference time domain(FDTD)algorithm and the scattering matrix method(SMM)....The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calcu-lated using the 2D finite difference time domain(FDTD)algorithm and the scattering matrix method(SMM).The periods and etch depth of the grating parameters have been optimized.A board area laser diode(BA-LD)with high-order diffraction grat-ings has been designed and fabricated.At output powers up to 10.5 W,the measured spectral width of full width at half maxi-mum(FWHM)is less than 0.5 nm.The results demonstrate that the designed high-order surface gratings can effectively nar-row the spectral width of multimode semiconductor lasers at high output power.展开更多
GaN-based continuous-wave operated blue-violet laser diodes(LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm^2 ri...GaN-based continuous-wave operated blue-violet laser diodes(LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm^2 ridge waveguide structure.The electrical and optical characteristics of a blue-violet LD are investigated under direct-current injection at room temperature(25 °C). The stimulated emission wavelength and peak optical power of the LD are around 413 nm and over 600 mW, respectively.In addition, the threshold current density and voltage are as small as 1.46 kA/cm^2 and 4.1 V, respectively. Moreover, the lifetime is longer than 1000 hours under room-temperature continuous-wave operation.展开更多
The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold c...The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.展开更多
This paper presents the cw output characteristics of Nd^(3+):KGd(WO_(4))_(2)(KGW)laser crystal with different NcP+concentration grown in our laboratory.The laser output at 1.067 μm of KGW crystal(3×3×6 mm)w...This paper presents the cw output characteristics of Nd^(3+):KGd(WO_(4))_(2)(KGW)laser crystal with different NcP+concentration grown in our laboratory.The laser output at 1.067 μm of KGW crystal(3×3×6 mm)was obtained to be 68.9 mW and the slope efficiency reached 28.8%when pumped by laser diode of power 305 mW at 807 nm.展开更多
In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-...In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition(MOCVD),and the width and length of the ridge waveguide structure are 30 and 1200μm,respectively.The threshold current is about 400 mA,and corresponding threshold current density is 1.1 kA/cm2.展开更多
A double-tapered AlGaN electron blocking layer (EBL) is proposed to apply in a deep ultraviolet semiconductor laser diode. Compared with the inverse double-tapered EBL, the laser with the double-tapered EBL shows a hi...A double-tapered AlGaN electron blocking layer (EBL) is proposed to apply in a deep ultraviolet semiconductor laser diode. Compared with the inverse double-tapered EBL, the laser with the double-tapered EBL shows a higher slope efficiency, which indicates that effective enhancement in the transportation of electrons and holes is achieved. Particularly, comparisons among the double-tapered EBL, the inverse double-tapered EBL, the singletapered EBL and the inverse single-tapered EBL show that the double-tapered EBL has the best performance in terms of current leakage.展开更多
Au80Sn20 alloy is a widely used solder for laser diode packaging.In this paper,the thermal resistance of Ga N-based blue laser diodes packaged in TO56 cans were measured by the forward voltage method.The microstructur...Au80Sn20 alloy is a widely used solder for laser diode packaging.In this paper,the thermal resistance of Ga N-based blue laser diodes packaged in TO56 cans were measured by the forward voltage method.The microstructures of Au80Sn20 solder were then investigated to understand the reason for the difference in thermal resistance.It was found that the microstructure with a higher content of Au-rich phase in the center of the solder and a lower content of(Au,Ni)Sn phase at the interface of the solder/heat sink resulted in lower thermal resistance.This is attributed to the lower thermal resistance of Au-rich phase and higher thermal resistance of(Au,Ni)Sn phase.展开更多
In recent years,because of their small size,high efficiency and environment-friendly advantages,Ⅲ-nitride based ultraviolet(UV)light-emitting diodes(LEDs)have been widely used in many areas to substitute for mercury ...In recent years,because of their small size,high efficiency and environment-friendly advantages,Ⅲ-nitride based ultraviolet(UV)light-emitting diodes(LEDs)have been widely used in many areas to substitute for mercury lamps,such as in 3D printing,curing and sterilization.Ⅲ-nitride alloys cover the whole UV spectrum which is comprised of UV-A(320–400 nm),UV-B(280–320 nm)and UV-C(200–280 nm)by controlling Al/Ga/In content.In addition,Ⅲ-nitride based UV laser diodes(LDs)also have some potential applications in the case of high-power-density,narrow-spectrum,good-directional lighting.However,Ⅲ-nitride based UV laser diodes still have many challenges such as poor crystal quality and low hole concentration in p-type AlGaN.展开更多
AIM:To investigate the effects of diode laser treatment on ocular biometric parameters in premature infants with retinopathy of prematurity(ROP).METHODS:Premature infants who received diode laser treatment for ROP(n=6...AIM:To investigate the effects of diode laser treatment on ocular biometric parameters in premature infants with retinopathy of prematurity(ROP).METHODS:Premature infants who received diode laser treatment for ROP(n=68)and premature infants with spontaneous regressed ROP without treatment(n=50)were performed longitudinal ocular biometric measurements including anterior chamber depth,lens thickness and axial length as follows:1 d prior to laser treatment,and 3,6,9,and 12 mo after the laser treatment.RESULTS:The mean birth weight,gestational age and initial examination time values were 936.53±302.07 g,26.66±2.42 wk,36.26±2.73 wk in the treatment group and 959.78±260.08 g,27.28±2.10 wk,36.56±2.54 wk in the control group.There was no statistically significant difference in these demographic characteristics of the groups.Anterior chamber depth,lens thickness and axial length demonstrated statistically significant linear increases during the study period in the two groups(P<0.001 for each).There were no statistically significant differences between the two groups in terms of anterior chamber depth after laser treatment.Measurements of the lens thickness at 9 th and 12 th months(9 th month 3.70±0.22 vs 3.60±0.21 mm,P=0.017;12 th month 3.81±0.21 vs 3.69±0.22 mm,P=0.002)and the axial length at 12 th month(19.35±0.79 vs 19.13±0.54 mm,P=0.031)after laser treatment were statistically higher in the treatment group.CONCLUSION:Diode laser retinal photocoagulation treatment in premature infants seems to increase the lens thickness and axial length.展开更多
This paper presents the design and testing of a 15 Gbps non-return-to-zero(NRZ),30 Gbps 4-level pulse amplitude modulation(PAM4)configurable laser diode driver(LDD)implemented in 0.15-μm GaAs E-mode pHEMT technology....This paper presents the design and testing of a 15 Gbps non-return-to-zero(NRZ),30 Gbps 4-level pulse amplitude modulation(PAM4)configurable laser diode driver(LDD)implemented in 0.15-μm GaAs E-mode pHEMT technology.The driver bandwidth is enhanced by utilizing cross-coupled neutralization capacitors across the output stage.The output transmission-line back-termination,which absorbs signal reflections from the imperfectly matched load,is performed passively with on-chip 50-Ωresistors.The proposed 30 Gbps PAM4 LDD is implemented by combining two 15 Gbps-NRZ LDDs,as the high and low amplification paths,to generate PAM4 output current signal with levels of 0,40,80,and 120 mA when driving 25-Ωlasers.The high and low amplification paths can be used separately or simultaneously as a 15 Gbps-NRZ LDD.The measurement results show clear output eye diagrams at speeds of up to 15 and 30 Gbps for the NRZ and PAM4 drivers,respectively.At a maximum output current of 120 mA,the driver consumes 1.228 W from a single supply voltage of-5.2 V.The proposed driver shows a high current driving capability with a better output power to power dissipation ratio,which makes it suitable for driving high current distributed feedback(DFB)lasers.The chip occupies a total area of 0.7×1.3 mm^(2).展开更多
Densities of Ar metastable states 1s_5 and 1s_3 are measured by using the tunable diode laser absorption spectroscopy(TDLAS) in Ar and Ar/O2 mixture dual-frequency capacitively coupled plasma(DF-CCP). We investigate t...Densities of Ar metastable states 1s_5 and 1s_3 are measured by using the tunable diode laser absorption spectroscopy(TDLAS) in Ar and Ar/O2 mixture dual-frequency capacitively coupled plasma(DF-CCP). We investigate the effects of high-frequency(HF, 60 MHz) power, low-frequency(LF, 2 MHz) power, and working pressure on the density of Ar metastable states for three different gas components(0%, 5%, and 10% oxygen mixed in argon). The dependence of Ar metastable state density on the oxygen content is also studied at different working pressures. It is found that densities of Ar metastable states in discharges with different gas components exhibit different behaviors as HF power increases. With the increase of HF power, the metastable density increases rapidly at the initial stage, and then tends to be saturated at a higher HF power. With a small fraction(5% or 10%) of oxygen added in argon plasma, a similar change of the Ar metastable density with HF power can be observed, but the metastable density is saturated at a higher HF power than in the pure argon discharge. In the DF-CCP, the metastable density is found to be higher than in a single frequency discharge, and has weak dependence on LF power. As working pressure increases, the metastable state density first increases and then decreases,and the pressure value, at which the density maximum occurs, decreases with oxygen content increasing. Besides, adding a small fraction of oxygen into argon plasma will significantly dwindle the metastable state density as a result of quenching loss by oxygen molecules.展开更多
The influences of InGaN/GaN multiple quantum wells(MQWs) and AlGaN electron-blocking layers(EBL) on the performance of GaN-based violet laser diodes are investigated. Compared with the InGaN/GaN MQWs grown at two diff...The influences of InGaN/GaN multiple quantum wells(MQWs) and AlGaN electron-blocking layers(EBL) on the performance of GaN-based violet laser diodes are investigated. Compared with the InGaN/GaN MQWs grown at two different temperatures, the same-temperature growth of InGaN well and GaN barrier layers has a positive effect on the threshold current and slope efficiency of laser diodes, indicating that the quality of MQWs is improved. In addition, the performance of GaN laser diodes could be further improved by increasing Al content in the AlGaN EBL due to the fact that the electron leakage current could be reduced by properly increasing the barrier height of AlGaN EBL. The violet laser diode with a peak output power of 20 W is obtained.展开更多
A tunable single-passband microwave photonic filter is proposed and demonstrated, based on a laser diode(LD)array with multiple optical carriers and a Fabry-Perot(F-P) laser diode. Multiple optical carriers in conjunc...A tunable single-passband microwave photonic filter is proposed and demonstrated, based on a laser diode(LD)array with multiple optical carriers and a Fabry-Perot(F-P) laser diode. Multiple optical carriers in conjunction with the F-P LD will realize a filter with multiple passbands. By adjusting the wavelengths of the multiple optical carriers, multiple passbands are merged into a single passband with a broadened bandwidth. By varying the number of the optical carrier, the bandwidth can be adjusted. The central frequency can be tuned by adjusting the wavelength of the multiple optical carriers simultaneously. A single-passband filter implemented by two optical carriers is experimentally demonstrated.展开更多
Almost all the atoms in the hyperfine sublevel F=4,m_(F)=0("clock level")of cesium ground state have been pumped out by using a laser diode tuned on the Cs-D2 line;and 15.2%population difference(|δoo|)which...Almost all the atoms in the hyperfine sublevel F=4,m_(F)=0("clock level")of cesium ground state have been pumped out by using a laser diode tuned on the Cs-D2 line;and 15.2%population difference(|δoo|)which is more than two times better than what the traditional magnetical selecting state method could provide is found.This experimental result can be applied into building an optically pumped Cs beam frequency standard and better performance will be expected.展开更多
As a step toward realizing magnesium civilization,which needs a sustainable Mg production process,the reduction of MgO to Mg has been investigated.Direct diode laser(DDL)produces high power and continuous beam in tiny...As a step toward realizing magnesium civilization,which needs a sustainable Mg production process,the reduction of MgO to Mg has been investigated.Direct diode laser(DDL)produces high power and continuous beam in tiny spots.The laser with energy density up to 83*10^(5) W/cm^(2) is focused on MgO/Si target inside the vacuum chamber,creating the high temperature zone,which stimulates the Mg production reaction.The vapor is collected on the copper plate;and then,analyzed chemically in terms of Mg production efficiency.The largest reduction and energy efficiencies in Ar atmosphere were 41%and 15.3 mg kJ^(−1),while in the vacuum,13.5%and 15.8 mg kJ^(−1) were attainable.The reactions of MgO and Si have been investigated.Calculations revealed that the MgO reduction with Si proceeds as heterogeneous reaction.The rate of reaction of Si with MgO is faster than the rate of MgO evaporation and Mg vapor deposition.展开更多
The laser provides a controllable means of supplying localized energy for solder joint formation and is a valuable tool in electronics manufacture.Diode laser soldering for fine pitch QFP devices were carried out with...The laser provides a controllable means of supplying localized energy for solder joint formation and is a valuable tool in electronics manufacture.Diode laser soldering for fine pitch QFP devices were carried out with Sn-Ag-Cu lead-free solder and Sn-Pb solder respectively,and the mechanical properties of micro-joints of the QFP devices were tested and studied by STR-1000 micro-joints tester.The results indicate that sound QFP micro-joints without bridging or solder ball are gained by means of diode laser soldering method with appropriate laser processing parameters,and the pitch of the QFP devices is as fine as to 0.4mm.Tensile strength of QFP micro-joints increases gradually with the increase of laser output power,the maximum tensile strength presents when the laser output power increase to a certain value.The results also indicate that the mechanical properties of QFP micro-joints soldered by diode laser soldering system are better than those of QFP micro-joints soldered by IR reflow soldering method.The experimental results may provide a theory guide for investigation of diode laser soldering.展开更多
基金This work was supported by the National Key R&D Program of China(2022YFB3605104)National Natural Science Foundation of China(62250038,61904172,61974162,62034008,62074142,and 62074140)+1 种基金Strategic Priority Research Program of Chinese Academy of Sciences(XDB43030101)Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2022SX-TD016).
文摘In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we analyze the challenges of developing GaN-based ultraviolet laser diodes,and the approaches to improve the performance of ultraviolet laser diode are reviewed.With these techniques,room temperature(RT)pulsed oscillation of AlGaN UVA(ultraviolet A)LD has been realized,with a lasing wavelength of 357.9 nm.Combining with the suppression of thermal effect,the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.
基金supported by the National Natural Science Foundation of China(Nos.11674269,61975168).
文摘Here we developed a novel wavelength-switchable visible continuous-wave(CW)Pr^(3+):YLF laser around 670 nm.In single-wavelength laser operations,the maximum output powers of 2.60 W,1.26 W,and 0.21 W,the maximum slope efficiencies of 34.7%,27.3%,and 12.3%were achieved with good beam qualities(M^(2)<1.6)at 670.4 nm,674.2 nm,and 678.9 nm,respectively.Record-high output power(2.6 W)and record-high slope efficiency(34.7%)were achieved for the Pr^(3+):YLF laser operation at 670.4 nm.This is also the first demonstration of longer-wavelength peaks beyond 670 nm in the^(3)P_(1)→^(3)F_(3)transition of Pr^(3+):YLF.In multi-wavelength laser operations,the dual-wavelength lasings,including 670.1/674.8 nm,670.1/679.1 nm,and 675.0/679.4 nm,were obtained by fine adjustment of one/two etalons within the cavity.Furthermore,the triple-wavelength lasings,e.g.672.2/674.2/678.6 nm and 670.4/674.8/679.4 nm,were successfully demonstrated.Moreover,both the first-order vortex lasers(LG_(0)^(+1)and LG_(0)^(-1)modes)at 670.4 nm were obtained by off-axis pumping.
基金the National Natural Science Foundation of China(Grant Nos.12035006,12205095,and12147219)the Natural Science Foundation of Zhejiang Province(Grant No.LQ21A040001)。
文摘We present a compact injection-locking diode laser module to generate 671 nm laser light with a high output power up to 150 m W.The module adopts a master-slave injection-locking scheme,and the injection-locking state is monitored using the transmission spectrum from a Fabry-Perot interferometer.Beat frequency spectrum measurement shows that the injection-locked slave laser has no other frequency components within the 150-MHz detection bandwidth.It is found that without additional electronic feedback,the slave laser can follow the master laser over a wide range of 6 GHz.All the elements of the module are commercially available,which favors fast construction of a complete 671-nm laser system for the preparation of cold^(6)Li atoms with only one research-grade diode laser as the seeding source.
基金supported by the National Key R&D Program of China,No.2022YFB4601201.
文摘The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calcu-lated using the 2D finite difference time domain(FDTD)algorithm and the scattering matrix method(SMM).The periods and etch depth of the grating parameters have been optimized.A board area laser diode(BA-LD)with high-order diffraction grat-ings has been designed and fabricated.At output powers up to 10.5 W,the measured spectral width of full width at half maxi-mum(FWHM)is less than 0.5 nm.The results demonstrate that the designed high-order surface gratings can effectively nar-row the spectral width of multimode semiconductor lasers at high output power.
基金supported by the National Key R&D Program of China (Nos. 2016YFB0401801, 2016YFB0400803)the Science Challenge Project (No. TZ2016003)+1 种基金the National Natural Science Foundation of China (Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110)the Beijing Municipal Science and Technology Project (No. Z161100002116037)
文摘GaN-based continuous-wave operated blue-violet laser diodes(LDs) with long lifetime are demonstrated, which are grown on a c-plane GaN substrate by metal organic chemical vapor deposition with a 10 × 600 μm^2 ridge waveguide structure.The electrical and optical characteristics of a blue-violet LD are investigated under direct-current injection at room temperature(25 °C). The stimulated emission wavelength and peak optical power of the LD are around 413 nm and over 600 mW, respectively.In addition, the threshold current density and voltage are as small as 1.46 kA/cm^2 and 4.1 V, respectively. Moreover, the lifetime is longer than 1000 hours under room-temperature continuous-wave operation.
基金supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0405000,2016YFB0401803)the National Natural Science Foundation of China(Grant Nos.61834008,61574160,and 61704184)support of the Chinese Academy of Science Visiting Professorship for Senior International Scientists (Grant No.2013T2J0048)
文摘The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.
基金Supported by the National Natural Science Foundation of ChinaFujian Provincial Natural Science Foundation.
文摘This paper presents the cw output characteristics of Nd^(3+):KGd(WO_(4))_(2)(KGW)laser crystal with different NcP+concentration grown in our laboratory.The laser output at 1.067 μm of KGW crystal(3×3×6 mm)was obtained to be 68.9 mW and the slope efficiency reached 28.8%when pumped by laser diode of power 305 mW at 807 nm.
基金This work was supported by the National Key R&D Program of China(Grant Nos.2018YFB0406903,2017YFB0405001,2016YFB0400803 and 2016YFB0401801)the Science Challenge Project(Grant No.TZ2016003)+5 种基金the National Natural Science Foundation of China(Grant Nos.62034008,62074142,62074140,61974162,61904172,and 61874175)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2019115)Beijing Nova Program(Grant No.202093)Beijing Municipal Science and Technology Project(Grant No.Z161100002116037)Jiangsu Institute of Advanced Semiconductors(IASEMI 2020-CRP-02)Young Elite Scientists Sponsorship Program by CAST.
文摘In this work,we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode(LD),and its stimulated emission wavelength is around 442 nm.The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition(MOCVD),and the width and length of the ridge waveguide structure are 30 and 1200μm,respectively.The threshold current is about 400 mA,and corresponding threshold current density is 1.1 kA/cm2.
基金Supported by the National Key Research and Development Program under Grant No 2016YFE0118400the Key Project of Science and Technology of Henan Province under Grant No 172102410062+1 种基金the National Natural Science Foundation of China under Grant No 61176008the National Natural Science Foundation of China Henan Provincial Joint Fund Key Project under Grant No U1604263
文摘A double-tapered AlGaN electron blocking layer (EBL) is proposed to apply in a deep ultraviolet semiconductor laser diode. Compared with the inverse double-tapered EBL, the laser with the double-tapered EBL shows a higher slope efficiency, which indicates that effective enhancement in the transportation of electrons and holes is achieved. Particularly, comparisons among the double-tapered EBL, the inverse double-tapered EBL, the singletapered EBL and the inverse single-tapered EBL show that the double-tapered EBL has the best performance in terms of current leakage.
基金supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0401803,2017YFE0131500,2017YFB0405000)National Natural Science Foundation of China(Grant Nos.61834008,61574160,61804164,and 61704184)+1 种基金Natural Science Foundation of Jiangsu province(BK20180254)China Postdoctoral Science Foundation(2018M630619)。
文摘Au80Sn20 alloy is a widely used solder for laser diode packaging.In this paper,the thermal resistance of Ga N-based blue laser diodes packaged in TO56 cans were measured by the forward voltage method.The microstructures of Au80Sn20 solder were then investigated to understand the reason for the difference in thermal resistance.It was found that the microstructure with a higher content of Au-rich phase in the center of the solder and a lower content of(Au,Ni)Sn phase at the interface of the solder/heat sink resulted in lower thermal resistance.This is attributed to the lower thermal resistance of Au-rich phase and higher thermal resistance of(Au,Ni)Sn phase.
文摘In recent years,because of their small size,high efficiency and environment-friendly advantages,Ⅲ-nitride based ultraviolet(UV)light-emitting diodes(LEDs)have been widely used in many areas to substitute for mercury lamps,such as in 3D printing,curing and sterilization.Ⅲ-nitride alloys cover the whole UV spectrum which is comprised of UV-A(320–400 nm),UV-B(280–320 nm)and UV-C(200–280 nm)by controlling Al/Ga/In content.In addition,Ⅲ-nitride based UV laser diodes(LDs)also have some potential applications in the case of high-power-density,narrow-spectrum,good-directional lighting.However,Ⅲ-nitride based UV laser diodes still have many challenges such as poor crystal quality and low hole concentration in p-type AlGaN.
文摘AIM:To investigate the effects of diode laser treatment on ocular biometric parameters in premature infants with retinopathy of prematurity(ROP).METHODS:Premature infants who received diode laser treatment for ROP(n=68)and premature infants with spontaneous regressed ROP without treatment(n=50)were performed longitudinal ocular biometric measurements including anterior chamber depth,lens thickness and axial length as follows:1 d prior to laser treatment,and 3,6,9,and 12 mo after the laser treatment.RESULTS:The mean birth weight,gestational age and initial examination time values were 936.53±302.07 g,26.66±2.42 wk,36.26±2.73 wk in the treatment group and 959.78±260.08 g,27.28±2.10 wk,36.56±2.54 wk in the control group.There was no statistically significant difference in these demographic characteristics of the groups.Anterior chamber depth,lens thickness and axial length demonstrated statistically significant linear increases during the study period in the two groups(P<0.001 for each).There were no statistically significant differences between the two groups in terms of anterior chamber depth after laser treatment.Measurements of the lens thickness at 9 th and 12 th months(9 th month 3.70±0.22 vs 3.60±0.21 mm,P=0.017;12 th month 3.81±0.21 vs 3.69±0.22 mm,P=0.002)and the axial length at 12 th month(19.35±0.79 vs 19.13±0.54 mm,P=0.031)after laser treatment were statistically higher in the treatment group.CONCLUSION:Diode laser retinal photocoagulation treatment in premature infants seems to increase the lens thickness and axial length.
文摘This paper presents the design and testing of a 15 Gbps non-return-to-zero(NRZ),30 Gbps 4-level pulse amplitude modulation(PAM4)configurable laser diode driver(LDD)implemented in 0.15-μm GaAs E-mode pHEMT technology.The driver bandwidth is enhanced by utilizing cross-coupled neutralization capacitors across the output stage.The output transmission-line back-termination,which absorbs signal reflections from the imperfectly matched load,is performed passively with on-chip 50-Ωresistors.The proposed 30 Gbps PAM4 LDD is implemented by combining two 15 Gbps-NRZ LDDs,as the high and low amplification paths,to generate PAM4 output current signal with levels of 0,40,80,and 120 mA when driving 25-Ωlasers.The high and low amplification paths can be used separately or simultaneously as a 15 Gbps-NRZ LDD.The measurement results show clear output eye diagrams at speeds of up to 15 and 30 Gbps for the NRZ and PAM4 drivers,respectively.At a maximum output current of 120 mA,the driver consumes 1.228 W from a single supply voltage of-5.2 V.The proposed driver shows a high current driving capability with a better output power to power dissipation ratio,which makes it suitable for driving high current distributed feedback(DFB)lasers.The chip occupies a total area of 0.7×1.3 mm^(2).
基金supported by the National Natural Science Foundation of China(Grant Nos.11335004,11722541,11675039,and 11747153)the Important National Science and Technology Specific Project,China(Grant No.2011ZX02403-001)
文摘Densities of Ar metastable states 1s_5 and 1s_3 are measured by using the tunable diode laser absorption spectroscopy(TDLAS) in Ar and Ar/O2 mixture dual-frequency capacitively coupled plasma(DF-CCP). We investigate the effects of high-frequency(HF, 60 MHz) power, low-frequency(LF, 2 MHz) power, and working pressure on the density of Ar metastable states for three different gas components(0%, 5%, and 10% oxygen mixed in argon). The dependence of Ar metastable state density on the oxygen content is also studied at different working pressures. It is found that densities of Ar metastable states in discharges with different gas components exhibit different behaviors as HF power increases. With the increase of HF power, the metastable density increases rapidly at the initial stage, and then tends to be saturated at a higher HF power. With a small fraction(5% or 10%) of oxygen added in argon plasma, a similar change of the Ar metastable density with HF power can be observed, but the metastable density is saturated at a higher HF power than in the pure argon discharge. In the DF-CCP, the metastable density is found to be higher than in a single frequency discharge, and has weak dependence on LF power. As working pressure increases, the metastable state density first increases and then decreases,and the pressure value, at which the density maximum occurs, decreases with oxygen content increasing. Besides, adding a small fraction of oxygen into argon plasma will significantly dwindle the metastable state density as a result of quenching loss by oxygen molecules.
基金Supported by the National Key Research and Development Program of China under Grant No 2016YFB0401801the National Natural Science Foundation of China under Grant Nos 61574135,61574134,61474142,61474110,61377020,61376089,and 61223005the One Hundred Person Project of the Chinese Academy of Sciences
文摘The influences of InGaN/GaN multiple quantum wells(MQWs) and AlGaN electron-blocking layers(EBL) on the performance of GaN-based violet laser diodes are investigated. Compared with the InGaN/GaN MQWs grown at two different temperatures, the same-temperature growth of InGaN well and GaN barrier layers has a positive effect on the threshold current and slope efficiency of laser diodes, indicating that the quality of MQWs is improved. In addition, the performance of GaN laser diodes could be further improved by increasing Al content in the AlGaN EBL due to the fact that the electron leakage current could be reduced by properly increasing the barrier height of AlGaN EBL. The violet laser diode with a peak output power of 20 W is obtained.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61302026,61275067 and 61575034the Jiangsu Natural Science Foundation under Grant No BK2012432
文摘A tunable single-passband microwave photonic filter is proposed and demonstrated, based on a laser diode(LD)array with multiple optical carriers and a Fabry-Perot(F-P) laser diode. Multiple optical carriers in conjunction with the F-P LD will realize a filter with multiple passbands. By adjusting the wavelengths of the multiple optical carriers, multiple passbands are merged into a single passband with a broadened bandwidth. By varying the number of the optical carrier, the bandwidth can be adjusted. The central frequency can be tuned by adjusting the wavelength of the multiple optical carriers simultaneously. A single-passband filter implemented by two optical carriers is experimentally demonstrated.
文摘Almost all the atoms in the hyperfine sublevel F=4,m_(F)=0("clock level")of cesium ground state have been pumped out by using a laser diode tuned on the Cs-D2 line;and 15.2%population difference(|δoo|)which is more than two times better than what the traditional magnetical selecting state method could provide is found.This experimental result can be applied into building an optically pumped Cs beam frequency standard and better performance will be expected.
文摘As a step toward realizing magnesium civilization,which needs a sustainable Mg production process,the reduction of MgO to Mg has been investigated.Direct diode laser(DDL)produces high power and continuous beam in tiny spots.The laser with energy density up to 83*10^(5) W/cm^(2) is focused on MgO/Si target inside the vacuum chamber,creating the high temperature zone,which stimulates the Mg production reaction.The vapor is collected on the copper plate;and then,analyzed chemically in terms of Mg production efficiency.The largest reduction and energy efficiencies in Ar atmosphere were 41%and 15.3 mg kJ^(−1),while in the vacuum,13.5%and 15.8 mg kJ^(−1) were attainable.The reactions of MgO and Si have been investigated.Calculations revealed that the MgO reduction with Si proceeds as heterogeneous reaction.The rate of reaction of Si with MgO is faster than the rate of MgO evaporation and Mg vapor deposition.
基金supported by Nanjing University of Aeronautics and Astronautics Doctoral Dissertation Innovation and Excellence Producing Foundation of China (Grant No. BCXJ09-07)Jiangsu Provincial General Colleges and Universities Postgraduate Scientific Research Innovative Plan of China (Grant No. CX09B_074Z)the Six Kind Skilled Personnel Project of Jiangsu Province of China(Grant No. 06-E-020)
文摘The laser provides a controllable means of supplying localized energy for solder joint formation and is a valuable tool in electronics manufacture.Diode laser soldering for fine pitch QFP devices were carried out with Sn-Ag-Cu lead-free solder and Sn-Pb solder respectively,and the mechanical properties of micro-joints of the QFP devices were tested and studied by STR-1000 micro-joints tester.The results indicate that sound QFP micro-joints without bridging or solder ball are gained by means of diode laser soldering method with appropriate laser processing parameters,and the pitch of the QFP devices is as fine as to 0.4mm.Tensile strength of QFP micro-joints increases gradually with the increase of laser output power,the maximum tensile strength presents when the laser output power increase to a certain value.The results also indicate that the mechanical properties of QFP micro-joints soldered by diode laser soldering system are better than those of QFP micro-joints soldered by IR reflow soldering method.The experimental results may provide a theory guide for investigation of diode laser soldering.
