A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,bi...A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,biasing,and DC block circuitry included on the chip.Thepower amplifier has an average power gain of 19dB over 6～18GHz.At operation frequenciesfrom 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMICis 34.7dBm at 10Ghz.The input return loss is less than-10db and the out-put return is lessthan-6dB over operating frequency.This power amplifier has,to our knowledge,the best powergain flatness reported at C-X-Ku-band applications.展开更多
Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation o...Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation of 32dB, and input and output return losses over 10dB from 8 to 20GHz. The switch design uses 2.5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm. These performance characteristics are measured at a normal bias setting of 1.3V,which corresponds to 7mA of series diode bias current.展开更多
文摘A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,biasing,and DC block circuitry included on the chip.Thepower amplifier has an average power gain of 19dB over 6～18GHz.At operation frequenciesfrom 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMICis 34.7dBm at 10Ghz.The input return loss is less than-10db and the out-put return is lessthan-6dB over operating frequency.This power amplifier has,to our knowledge,the best powergain flatness reported at C-X-Ku-band applications.
文摘Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation of 32dB, and input and output return losses over 10dB from 8 to 20GHz. The switch design uses 2.5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm. These performance characteristics are measured at a normal bias setting of 1.3V,which corresponds to 7mA of series diode bias current.
