Silicon drift detector(SDD) is used in the soft x-ray pulse height analyzer(PHA) to measure soft x-ray emissions in fusion plasmas. SDD has the virtues of high count rates and high energy resolution, and the good perf...Silicon drift detector(SDD) is used in the soft x-ray pulse height analyzer(PHA) to measure soft x-ray emissions in fusion plasmas. SDD has the virtues of high count rates and high energy resolution, and the good performances at work temperature of about -10 ℃ achieved by single stage peltier element. The performance and first experimental results from SDD system are presented.展开更多
In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the...In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S^1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.展开更多
Carbonaceous catalysts are potential alternatives to metal catalysts. Graphene has been paid much attention for its high surface area and light weight. Here, hydrogenated graphene has been prepared by a simple gamma r...Carbonaceous catalysts are potential alternatives to metal catalysts. Graphene has been paid much attention for its high surface area and light weight. Here, hydrogenated graphene has been prepared by a simple gamma ray irradiation of graphene oxide aqueous suspension at room temperature. Transmission electron microscopic, element analysis, X-ray photoelectron spectroscopy, and UV-Vis spectrophotometer studies verified the hydrogenation of graphene. The as-prepared hydrogenated graphene can be used as a metal-free carbonaceous catalyst for the Fenton-like degradation of organic dye in water.展开更多
Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The m...Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,respectively.The electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark condition.The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,respectively.And the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as 21.5.For the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating film.The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 mA cm 2 and 39.9%,respectively.Because the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and p-Si.The barrier height and internal electric field,which is near the surface of p-Si,can effectively be enhanced.Thus we can see the great photovoltaic effect.展开更多
The Cu2 Zn Sn S4(CZTS) powders are successfully synthesized by using Zn S and Cu2 Sn S3 as raw materials directly without any intermediate phase at 450 °C for 3 h in Ar atmosphere.The crystalline structure,morpho...The Cu2 Zn Sn S4(CZTS) powders are successfully synthesized by using Zn S and Cu2 Sn S3 as raw materials directly without any intermediate phase at 450 °C for 3 h in Ar atmosphere.The crystalline structure,morphology and optical properties of the CZTS powders are characterized by X-ray diffraction(XRD),Raman spectrum,field emission scanning electron microscopy(FESEM) and ultraviolet-visible(UV-vis) spectrophotometer,respectively.The results show that the band gap of the obtained CZTS is 1.53 e V.The CZTS film is fabricated by spin coating a mixture of CZTS powders and novolac resin with a weight percentage of 30%.The photoelectrical properties of such CZTS films are measured,and the results show an incident light density of 100 m W·cm-2 with the bias voltage of 0.40 V,and the photocurrent density can approach 9.80×10-5 A·cm2 within 50 s,giving an on/off switching ratio of 1.64.展开更多
基金Yunnan Provincial Natural Science Foundation(2007A044 M)
文摘Silicon drift detector(SDD) is used in the soft x-ray pulse height analyzer(PHA) to measure soft x-ray emissions in fusion plasmas. SDD has the virtues of high count rates and high energy resolution, and the good performances at work temperature of about -10 ℃ achieved by single stage peltier element. The performance and first experimental results from SDD system are presented.
基金the National Natural Science Foundation of China(Grant No. 10576041)
文摘In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S^1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.
文摘Carbonaceous catalysts are potential alternatives to metal catalysts. Graphene has been paid much attention for its high surface area and light weight. Here, hydrogenated graphene has been prepared by a simple gamma ray irradiation of graphene oxide aqueous suspension at room temperature. Transmission electron microscopic, element analysis, X-ray photoelectron spectroscopy, and UV-Vis spectrophotometer studies verified the hydrogenation of graphene. The as-prepared hydrogenated graphene can be used as a metal-free carbonaceous catalyst for the Fenton-like degradation of organic dye in water.
基金supported by the State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,Donghua University (Grant No.13M1060102)the Fundamental Research Funds for the Central Universities,China,Donghua University (Grant No. 13D110913)+5 种基金National Natural Science Foundation of China (Grant Nos. 51072034,11174048,51172042)the Cultivation Fund of the Key Scientific and Technical Innovation Project of China (Grant No. 708039)Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 201100751300-01)Science and Technology Commission of Shanghai Municipality (Grant No. 12nm0503900)the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learningthe Program of Introducing Talents of Discipline to Universities of China(Grant No. 111-2-04)
文摘Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,respectively.The electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark condition.The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,respectively.And the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as 21.5.For the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating film.The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 mA cm 2 and 39.9%,respectively.Because the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and p-Si.The barrier height and internal electric field,which is near the surface of p-Si,can effectively be enhanced.Thus we can see the great photovoltaic effect.
基金supported by the Beijing Key Laboratory of Special Melting and Preparation of High-End Metal Materials
文摘The Cu2 Zn Sn S4(CZTS) powders are successfully synthesized by using Zn S and Cu2 Sn S3 as raw materials directly without any intermediate phase at 450 °C for 3 h in Ar atmosphere.The crystalline structure,morphology and optical properties of the CZTS powders are characterized by X-ray diffraction(XRD),Raman spectrum,field emission scanning electron microscopy(FESEM) and ultraviolet-visible(UV-vis) spectrophotometer,respectively.The results show that the band gap of the obtained CZTS is 1.53 e V.The CZTS film is fabricated by spin coating a mixture of CZTS powders and novolac resin with a weight percentage of 30%.The photoelectrical properties of such CZTS films are measured,and the results show an incident light density of 100 m W·cm-2 with the bias voltage of 0.40 V,and the photocurrent density can approach 9.80×10-5 A·cm2 within 50 s,giving an on/off switching ratio of 1.64.
