A kind of optical data storage medium based on electron-trapping materials,Y_(3)Al_(5)O_(12):Ce^(3+)fluorescent ceramic,was developed by vacuum sintering technology.The medium shows sufficiently deep traps[1.67 and 0....A kind of optical data storage medium based on electron-trapping materials,Y_(3)Al_(5)O_(12):Ce^(3+)fluorescent ceramic,was developed by vacuum sintering technology.The medium shows sufficiently deep traps[1.67 and 0.77 eV].The properties of trap levels were researched by thermoluminescence curves,and the optical storage mechanism based on Ce^(3+)ion doping was proposed.More importantly,the data can be written-in by 254 nm UV light,and readout by heating[300°C].This work expands the application fields of fluorescent ceramics,and it is expected to promote the development of electron-trapping materials.展开更多
In this paper,a novel Ce(Gd2 Y)Al5O12/Ce:Y3Al5O12(Ce:GYAG/Ce:YAG)composite scintillation ceramic was designed and fabricated by a solid-state reaction method.The phase,luminescence and scintillation properties were in...In this paper,a novel Ce(Gd2 Y)Al5O12/Ce:Y3Al5O12(Ce:GYAG/Ce:YAG)composite scintillation ceramic was designed and fabricated by a solid-state reaction method.The phase,luminescence and scintillation properties were investigated.The Ce:GYAG/Ce:YAG composite ceramic consisting of two-phase has a broad emission band ranging from 500 to 750 nm.The total mass attenuation coefficient of Ce:GYAG/Ce:YAG is 0.3864 cm^-1,in between those of Ce:YAG and Ce:GYAG ceramics.In addition,the composite ceramic had a high light yield of 20430 ph/MeV.By controlling the ratio of GYAG and YAG,the composite ceramic can realize a spectrum design and total mass attenuation coefficient control to meet the requirements for wide-X-ray-energy-range detectors.展开更多
Pulling growth technique serves as a popular method to grow congruent melting single crystals with multiscale sizes ranging from micrometers to centimeters.In order to obtain high quality single crystals,the crystal c...Pulling growth technique serves as a popular method to grow congruent melting single crystals with multiscale sizes ranging from micrometers to centimeters.In order to obtain high quality single crystals,the crystal constituents would be arranged at the lattice sites by precisely controlling the crystal growth process.Growing interface is the position where the phase transition of crystal constituents occurs during pulling growth process.The precise control of energy at the growing interface becomes a key technique in pulling growth.In this work,we review some recent advances of pulling technique towards rare earth single crystal growth.In Czochralski pulling growth,the optimized growth parameters were designed for rare earth ions doped Y_3Al_5O_(12)and Ce:(Lu_(1-x)Y_x)_2Si O_5on the basis of anisotropic chemical bonding and isotropic mass transfer calculations at the growing interface.The fast growth of high quality rare earth single crystals is realized by controlling crystallization thermodynamics and kinetics in different size zones.On the other hand,the micro pulling down technique can be used for high throughput screening novel rare earth optical crystals.The growth interface control is realized by improving the crucible bottom and temperature field,which favors the growth of rare earth crystal fibers.The rare earth laser crystal fiber can serve as another kind of laser gain medium between conventional bulk single crystal and glass fiber.The future work on pulling technique might focus on the mass production of rare earth single crystals with extreme size and with the size near that of devices.展开更多
基金supported by the National Key Research and Development Program of China(No.2021YFB2802001)the National Natural Science Foundation of China(No.62175153)。
文摘A kind of optical data storage medium based on electron-trapping materials,Y_(3)Al_(5)O_(12):Ce^(3+)fluorescent ceramic,was developed by vacuum sintering technology.The medium shows sufficiently deep traps[1.67 and 0.77 eV].The properties of trap levels were researched by thermoluminescence curves,and the optical storage mechanism based on Ce^(3+)ion doping was proposed.More importantly,the data can be written-in by 254 nm UV light,and readout by heating[300°C].This work expands the application fields of fluorescent ceramics,and it is expected to promote the development of electron-trapping materials.
基金financially supported by the National Natural Science Foundation of China(Nos.61378069,61405221,and 11535010)Youth Innovation Promotion Association of the Chinese Academy of Science(CAS)+2 种基金National Key Research and Development Program of China(SQ2017YFGX010025-03)Interdisciplinary Innovation Team of the CASGeneral Financial Grant from the China Postdoctoral Science Foundation(No.2016M601654)
文摘In this paper,a novel Ce(Gd2 Y)Al5O12/Ce:Y3Al5O12(Ce:GYAG/Ce:YAG)composite scintillation ceramic was designed and fabricated by a solid-state reaction method.The phase,luminescence and scintillation properties were investigated.The Ce:GYAG/Ce:YAG composite ceramic consisting of two-phase has a broad emission band ranging from 500 to 750 nm.The total mass attenuation coefficient of Ce:GYAG/Ce:YAG is 0.3864 cm^-1,in between those of Ce:YAG and Ce:GYAG ceramics.In addition,the composite ceramic had a high light yield of 20430 ph/MeV.By controlling the ratio of GYAG and YAG,the composite ceramic can realize a spectrum design and total mass attenuation coefficient control to meet the requirements for wide-X-ray-energy-range detectors.
基金supported by Jilin Province Science and Technology Development Project(Grant No.21521092JH)
文摘Pulling growth technique serves as a popular method to grow congruent melting single crystals with multiscale sizes ranging from micrometers to centimeters.In order to obtain high quality single crystals,the crystal constituents would be arranged at the lattice sites by precisely controlling the crystal growth process.Growing interface is the position where the phase transition of crystal constituents occurs during pulling growth process.The precise control of energy at the growing interface becomes a key technique in pulling growth.In this work,we review some recent advances of pulling technique towards rare earth single crystal growth.In Czochralski pulling growth,the optimized growth parameters were designed for rare earth ions doped Y_3Al_5O_(12)and Ce:(Lu_(1-x)Y_x)_2Si O_5on the basis of anisotropic chemical bonding and isotropic mass transfer calculations at the growing interface.The fast growth of high quality rare earth single crystals is realized by controlling crystallization thermodynamics and kinetics in different size zones.On the other hand,the micro pulling down technique can be used for high throughput screening novel rare earth optical crystals.The growth interface control is realized by improving the crucible bottom and temperature field,which favors the growth of rare earth crystal fibers.The rare earth laser crystal fiber can serve as another kind of laser gain medium between conventional bulk single crystal and glass fiber.The future work on pulling technique might focus on the mass production of rare earth single crystals with extreme size and with the size near that of devices.
