Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural a...Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×10^(18)cm^(-3), a high Mg activation efficiency of 6.5%,an activation energy of 114 me V for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.展开更多
Soil pot experiments were conducted in a greenhouse to examine the effects of different nitrogen （N） supply （low, 0.15 g N/kg; middle, 0.3 g N/kg; and high, 0.6 g N/kg dry soil） on the growth, photosynthetic chara...Soil pot experiments were conducted in a greenhouse to examine the effects of different nitrogen （N） supply （low, 0.15 g N/kg; middle, 0.3 g N/kg; and high, 0.6 g N/kg dry soil） on the growth, photosynthetic characteristics and photosynthetic nitrogen use efficiency （PNUE） of tobacco seedlings （Nicotiana tabacum L. Yunyan 87）. The results showed middle and high N significantly enhanced seedling growth including plant stem and leaf dry weight comparing with low N. High N supply could lead to a dramatic increase in the photosynthetic capacity of tobacco seedlings under low N conditions. There were significant differences in leaf N content between nitrogen treatments. About a 76% increase in leafN content in plants fed by high N resulted in about 43% increase in Rubisco content and 27% in net photosynthetic rate. The non-corresponding increases in photosynthetic rate in tobacco seedlings fed by high N relative to low N resulted from Rubisco activity and/or carboxylation efficiency （CE）. These results indicated that tobacco seedlings under high N application can maintain high net photosynthetic rate （Pn） but lower PNUE, will finally result in a decline in N use efficiency.展开更多
High efficiency, stable organic light-emitting diodes （OLEDs） based on 2-pheyl-4＇-carbazole-9-H-Thioxanthen-9- one-10, 10-dioxide （TXO-PhCz） with different doping concentration are constructed. The stability of t...High efficiency, stable organic light-emitting diodes （OLEDs） based on 2-pheyl-4＇-carbazole-9-H-Thioxanthen-9- one-10, 10-dioxide （TXO-PhCz） with different doping concentration are constructed. The stability of the encap- sulated devices are investigated in detail. The devices with the 10 wt% doped TXO-PhCz emitter layer （EML） show the best performance with a current efficiency of 52.1 cd/A, a power efficiency of 32.71re^W, and an external quantum efficiency （EQE） of 17.7%. The devices based on the lOwt%-doped TXO-PhCz EML show the best operational stability with a half-life time （LTSO） of 8Oh, which is 8 h longer than that of the reference devices based on fac-tris（2-phenylpyridinato）iridium（ Ⅲ） （Ir（ppy）a）. These indicate excellent stability of TXO-PhCz for redox and oxidation processes under electrical excitation and TXO-PhCz can be potentially used as the emitters for OLEDs with high efficiency and excellent stability. The high-performance device based on TXO-PhCz with high stability can be further improved by the optimization of the encapsulation technology and the development of a new host for TXO-PhCz.展开更多
Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth ...Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in(100) β-Ga_(2)O_(3) films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped β-Ga_(2)O_(3) film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the(400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance–voltage characteristics, the effective net doping concentrations of the films are 5.41 × 10~(15) – 1.74 × 10~(20) cm~(-3). Hall measurements demonstrate a high electron mobility value of 51cm~2/(V·s), corresponding to a carrier concentration of 7.19 × 10~(18) cm~(-3) and a high activation efficiency of up to 61.5%. Transmission line model(TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 × 10~(-4) Ω·cm~2 for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 × 10~(19) cm~(-3), confirming the effective Si doing in the MOCVD epitaxy.展开更多
Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology....Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.展开更多
An efficient diode-end-pumped actively Q-switched Nd：YLF/SrW04 Raman laser is demonstrated. The fun- damental wave is 1047.0nm and the corresponding first-Stocks wave is 1158.7nm. With a pumping power of 10.5 W, the ...An efficient diode-end-pumped actively Q-switched Nd：YLF/SrW04 Raman laser is demonstrated. The fun- damental wave is 1047.0nm and the corresponding first-Stocks wave is 1158.7nm. With a pumping power of 10.5 W, the average output power of 2.2 W at 1158.7nm is obtained, with the corresponding optical conversion efficiency of 20.9%. At a repetition rate of 6 kHz, the pulse width of the Raman laser is 8. 7ns and the peak power is calculated to be 42.1 kW. The beam quality factors M2 in horizontal and vertical directions are 1.3 and 1.5, respectively.展开更多
A diode-pumped actively Q-switched Raman laser is demonstrated, with YV04 employed as Raman active medium, based on a ceramic Nd：YAG laser operating at 1444nm. The first-stokes Raman generation at 1657nm is achieved....A diode-pumped actively Q-switched Raman laser is demonstrated, with YV04 employed as Raman active medium, based on a ceramic Nd：YAG laser operating at 1444nm. The first-stokes Raman generation at 1657nm is achieved. A maximum output power of as high as 612mW is obtained under a pump power of 20. 7 W and at a pulse repetition frequency rate of 20kHz, corresponding to an optical-to-optical conversion efficiency of 3%.展开更多
By analyzing airborne observations over North China from 30 flights during spring and autumn of 2005-2007, characteristics of the vertical distributions of aerosol and cloud condensation nuclei （CCN） at 0.3% supersa...By analyzing airborne observations over North China from 30 flights during spring and autumn of 2005-2007, characteristics of the vertical distributions of aerosol and cloud condensation nuclei （CCN） at 0.3% supersaturation in various locations of North China are investigated. The measurement samplings were conducted over different surfaces such as plains, plateau, and sea. The results show that the number concentration of accumulation mode aerosols was greater in autumn than in spring, but the reverse is true for CCN. This means that more aerosols with diameters smaller than 100 nm could be activated as CCN in spring, and this could induce higher aerosol activation efficiency. The aerosol activation efficiency over the plains near the Taihang Mountain was greater in spring than in autumn, and it was greater over sea than over land. The aerosol activation efficiency above the boundary layer over the Bashang Plateau was very low. Based on a fit of the negative exponential vertical distributions of aerosol and CCN, a spatial parameterization model of aerosol and CCN as well as aerosol activation efficiency over North China was proposed. The results show that aerosol activation efficiency was not clearly dependent on altitude because it was mainly affected by regional physical and chemical characteristics of aerosols and the ambient atmospheric conditions. The mean aerosol activation efficiency is 0.66, with values of 0.70 and 0.53 in spring and autumn, respectively.展开更多
2,7-Di（9,9-dimethyl-9H-fluoren-l-yl）-9H-thioxanthen-9-one （DMBFTX） with thermally activated delayed fluorescence （TADF） was well designed and synthesized. The phosphorescent organic lightemitting device （PHOLED...2,7-Di（9,9-dimethyl-9H-fluoren-l-yl）-9H-thioxanthen-9-one （DMBFTX） with thermally activated delayed fluorescence （TADF） was well designed and synthesized. The phosphorescent organic lightemitting device （PHOLED） based on this novel TADF host material displays a stable red phosphorescence region, a peak external quantum efficiency （EQE） value of 12.9% and a low EQE roll-off of 38.8%at a luminance of 10000 cd/m2, which is benefited from the reverse intersystem crossing （RISC） of TADF host and less populated triplet exitons. Notably, the red device based on the TADF host DMBFrX exhibits superior electroluminescence performance and reduced efficiency roll-offcompared with the one hosted by commercially available host 1,3-bis（9-carbazolyl）benzene （mCP）, illustrating the high potential of employing the TADF host material with small energy gap to reduce efficiency roll-off in PHOLED.展开更多
基金Project supported by the National Key Research and Development Program of China (Grant Nos.2021YFB3601000 and 2021YFB3601002)the National Natural Science Foundation of China (Grant Nos.62074077,61921005,61974062,62204121,and 61904082)+1 种基金Leading-edge Technology Program of Jiangsu Natural Science Foundation (Grant No.BE2021008-2)the China Postdoctoral Science Foundation (Grant No.2020M671441)。
文摘Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×10^(18)cm^(-3), a high Mg activation efficiency of 6.5%,an activation energy of 114 me V for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.
文摘Soil pot experiments were conducted in a greenhouse to examine the effects of different nitrogen （N） supply （low, 0.15 g N/kg; middle, 0.3 g N/kg; and high, 0.6 g N/kg dry soil） on the growth, photosynthetic characteristics and photosynthetic nitrogen use efficiency （PNUE） of tobacco seedlings （Nicotiana tabacum L. Yunyan 87）. The results showed middle and high N significantly enhanced seedling growth including plant stem and leaf dry weight comparing with low N. High N supply could lead to a dramatic increase in the photosynthetic capacity of tobacco seedlings under low N conditions. There were significant differences in leaf N content between nitrogen treatments. About a 76% increase in leafN content in plants fed by high N resulted in about 43% increase in Rubisco content and 27% in net photosynthetic rate. The non-corresponding increases in photosynthetic rate in tobacco seedlings fed by high N relative to low N resulted from Rubisco activity and/or carboxylation efficiency （CE）. These results indicated that tobacco seedlings under high N application can maintain high net photosynthetic rate （Pn） but lower PNUE, will finally result in a decline in N use efficiency.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61420106002,51373189,61178061,and 61227008the Hundred Talents Program of the Chinese Academy of Sciences,the National Basic Research Program of China under Grant No 2014CB932600the Start-Up Fund of the Technical Institute of Physics and Chemistry of the Chinese Academy of Sciences
文摘High efficiency, stable organic light-emitting diodes （OLEDs） based on 2-pheyl-4＇-carbazole-9-H-Thioxanthen-9- one-10, 10-dioxide （TXO-PhCz） with different doping concentration are constructed. The stability of the encap- sulated devices are investigated in detail. The devices with the 10 wt% doped TXO-PhCz emitter layer （EML） show the best performance with a current efficiency of 52.1 cd/A, a power efficiency of 32.71re^W, and an external quantum efficiency （EQE） of 17.7%. The devices based on the lOwt%-doped TXO-PhCz EML show the best operational stability with a half-life time （LTSO） of 8Oh, which is 8 h longer than that of the reference devices based on fac-tris（2-phenylpyridinato）iridium（ Ⅲ） （Ir（ppy）a）. These indicate excellent stability of TXO-PhCz for redox and oxidation processes under electrical excitation and TXO-PhCz can be potentially used as the emitters for OLEDs with high efficiency and excellent stability. The high-performance device based on TXO-PhCz with high stability can be further improved by the optimization of the encapsulation technology and the development of a new host for TXO-PhCz.
基金supported in part by the National Basic Research Program of China (Grant No. 2021YFB3600202)Key Laboratory Construction Project of Nanchang (Grant No. 2020-NCZDSY-008)Suzhou Science and Technology Foundation (Grant No. SYG202027)。
文摘Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in(100) β-Ga_(2)O_(3) films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped β-Ga_(2)O_(3) film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the(400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance–voltage characteristics, the effective net doping concentrations of the films are 5.41 × 10~(15) – 1.74 × 10~(20) cm~(-3). Hall measurements demonstrate a high electron mobility value of 51cm~2/(V·s), corresponding to a carrier concentration of 7.19 × 10~(18) cm~(-3) and a high activation efficiency of up to 61.5%. Transmission line model(TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 × 10~(-4) Ω·cm~2 for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 × 10~(19) cm~(-3), confirming the effective Si doing in the MOCVD epitaxy.
基金Project supported the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.XBBS201316,2016-QNXZ-B-2,and 2016-QNXZ-B-8)Young Talent Training Project of Science and Technology,Xinjiang,China(Grant No.qn2015yx035)
文摘Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11204160,61378032 and 61211120196the Shandong Province Science and Technology Research Projects under Grant No 2010GGX10137
文摘An efficient diode-end-pumped actively Q-switched Nd：YLF/SrW04 Raman laser is demonstrated. The fun- damental wave is 1047.0nm and the corresponding first-Stocks wave is 1158.7nm. With a pumping power of 10.5 W, the average output power of 2.2 W at 1158.7nm is obtained, with the corresponding optical conversion efficiency of 20.9%. At a repetition rate of 6 kHz, the pulse width of the Raman laser is 8. 7ns and the peak power is calculated to be 42.1 kW. The beam quality factors M2 in horizontal and vertical directions are 1.3 and 1.5, respectively.
基金Supported by the Foundation of the State Key Laboratory of Crystal Material of Shandong University under Grant No KF1101the Foundation of Shandong University under Grant No 1170072613176+2 种基金the National Natural Science Foundation of China under Grant Nos 11004122 and 11204160the Special Grade of China Postdoctoral Science Foundation under Grant No 201104627the Independent Innovation Foundation of Shandong University under Grant No 2011GN058
文摘A diode-pumped actively Q-switched Raman laser is demonstrated, with YV04 employed as Raman active medium, based on a ceramic Nd：YAG laser operating at 1444nm. The first-stokes Raman generation at 1657nm is achieved. A maximum output power of as high as 612mW is obtained under a pump power of 20. 7 W and at a pulse repetition frequency rate of 20kHz, corresponding to an optical-to-optical conversion efficiency of 3%.
基金Supported by the National Natural Science Foundation of China (40905058 and 40475003)Chinese Academy of Meteorological Sciences Basic Research and Operation Fund (2009Z003 and 2011Z005)China Meteorological Administration Special Public Welfare Research Fund (GYHY200806001)
文摘By analyzing airborne observations over North China from 30 flights during spring and autumn of 2005-2007, characteristics of the vertical distributions of aerosol and cloud condensation nuclei （CCN） at 0.3% supersaturation in various locations of North China are investigated. The measurement samplings were conducted over different surfaces such as plains, plateau, and sea. The results show that the number concentration of accumulation mode aerosols was greater in autumn than in spring, but the reverse is true for CCN. This means that more aerosols with diameters smaller than 100 nm could be activated as CCN in spring, and this could induce higher aerosol activation efficiency. The aerosol activation efficiency over the plains near the Taihang Mountain was greater in spring than in autumn, and it was greater over sea than over land. The aerosol activation efficiency above the boundary layer over the Bashang Plateau was very low. Based on a fit of the negative exponential vertical distributions of aerosol and CCN, a spatial parameterization model of aerosol and CCN as well as aerosol activation efficiency over North China was proposed. The results show that aerosol activation efficiency was not clearly dependent on altitude because it was mainly affected by regional physical and chemical characteristics of aerosols and the ambient atmospheric conditions. The mean aerosol activation efficiency is 0.66, with values of 0.70 and 0.53 in spring and autumn, respectively.
基金supported by National Natural Science Foundation of China(No. 61605158)the Science and TechnologyDepartment of Shaanxi Province(No. 2016JQ2028)the Education Department of Shaanxi Province(No. 16JK1790)
文摘2,7-Di（9,9-dimethyl-9H-fluoren-l-yl）-9H-thioxanthen-9-one （DMBFTX） with thermally activated delayed fluorescence （TADF） was well designed and synthesized. The phosphorescent organic lightemitting device （PHOLED） based on this novel TADF host material displays a stable red phosphorescence region, a peak external quantum efficiency （EQE） value of 12.9% and a low EQE roll-off of 38.8%at a luminance of 10000 cd/m2, which is benefited from the reverse intersystem crossing （RISC） of TADF host and less populated triplet exitons. Notably, the red device based on the TADF host DMBFrX exhibits superior electroluminescence performance and reduced efficiency roll-offcompared with the one hosted by commercially available host 1,3-bis（9-carbazolyl）benzene （mCP）, illustrating the high potential of employing the TADF host material with small energy gap to reduce efficiency roll-off in PHOLED.
