Wide bandgap perovskite solar cells(PSCs)have attracted significant attention because they can be applied to the top cells of tandem solar cells.However,high open-circuit voltage(V_(OC))deficit(>0.4 V)result from p...Wide bandgap perovskite solar cells(PSCs)have attracted significant attention because they can be applied to the top cells of tandem solar cells.However,high open-circuit voltage(V_(OC))deficit(>0.4 V)result from poor crystallization and high non-radiative recombination losses become a serious limitation in the pursuit of high performance.Here,the relevance between different Pbl_(2)proportions and performance parameters are revealed through analysis of surface morphology,residual stress,and photostability.The increase of Pbl_(2)proportion promotes crystal growth and reduces the work function of the perovskite film surface and promotes the energy level alignment with the carrier transport layer,which decreased the V_(OC)deficit.However,residual PbI_(2)exacerbated the stress level of perovskite film,and the resulting lattice disorder deteriorated the photostability of the device.Ultimately,after the synergistic passivation of residual PbI_(2)and PEAI,the V_(OC)achieves 1.266 V and V_(OC)deficit is less than 0.4 V,the record value in wide bandgap PSCs.展开更多
Carbazole moiety-based 2PACz([2-(9H-carbazol-9-yl)ethyl]phosphonic acid)self-assembled monolayers(SAMs)are excellent hole-selective contact(HSC)materials with abilities to excel the charge-transferdynamics of perovski...Carbazole moiety-based 2PACz([2-(9H-carbazol-9-yl)ethyl]phosphonic acid)self-assembled monolayers(SAMs)are excellent hole-selective contact(HSC)materials with abilities to excel the charge-transferdynamics of perovskite solar cells(PSCs).Herein,we report a facile but powerful method to functionalize the surface of 2PACz-SAM,by which reproducible,highly stable,high-efficiency wide-bandgap PSCs can be obtained.The 2PACz surface treatment with various donor number solvents improves assembly of 2PACz-SAM and leave residual surface-bound solvent molecules on 2PACz-SAM,which increases perovskite grain size,retards halide segregation,and accelerates hole extraction.The surface functionalization achieves a high power conversion efficiency(PCE)of 17.62%for a single-junction wide-bandgap(~1.77 e V)PSC.We also demonstrate a monolithic all-perovskite tandem solar cell using surfaceengineered HSC,showing high PCE of 24.66%with large open-circuit voltage of 2.008 V and high fillfactor of 81.45%.Our results suggest this simple approach can further improve the tandem device,when coupled with a high-performance narrow-bandgap sub-cell.展开更多
Theβ-LiGaO_(2)with an orthorhombic wurtzite-derived structure is a candidate ultrawide direct-bandgap semiconductor.In this work,using the non-adiabatic Allen-Heine-Cardona approach,we investigate the bandgap renorma...Theβ-LiGaO_(2)with an orthorhombic wurtzite-derived structure is a candidate ultrawide direct-bandgap semiconductor.In this work,using the non-adiabatic Allen-Heine-Cardona approach,we investigate the bandgap renormalization arising from electron-phonon coupling.We find a sizable zero-point motion correction of-0.362 eV to the gap atΓ,which is dominated by the contributions of long-wavelength longitudinal optical phonons.The bandgap ofβ-LiGaO_(2)decreases monotonically with increasing temperature.We investigate the optical spectra by comparing the model Bethe-Salpether equation method with the independent-particle approximation.The calculated optical spectra including electron-hole interactions exhibit strong excitonic effects,in qualitative agreement with the experiment.The contributing interband transitions and the binding energy for the excitonic states are analyzed.展开更多
Wide-bandgap(WBG)perovskites have been attracting much attention because of their immense potential as a front light-absorber for tandem solar cells.However,WBG perovskite solar cells(PSCs)generally exhibit undesired ...Wide-bandgap(WBG)perovskites have been attracting much attention because of their immense potential as a front light-absorber for tandem solar cells.However,WBG perovskite solar cells(PSCs)generally exhibit undesired large open-circuit voltage(VOC)loss due to light-induced phase segregation and severe non-radiative recombination loss.Herein,antimony potassium tartrate(APTA)is added to perovskite precursor as a multifunctional additive that not only coordinates with unbonded lead but also inhibits the migration of halogen in perovskite,which results in suppressed non-radiative recombination,inhibited phase segregation and better band energy alignment.Therefore,a APTA auxiliary WBG PSC with a champion photoelectric conversion efficiency of 20.35%and less hysteresis is presented.They maintain 80%of their initial efficiencies under 100 mW cm^(-2)white light illumination in nitrogen after 1,000 h.Furthermore,by combining a semi-transparent WBG perovskite front cell with a narrow-bandgap tin–lead PSC,a perovskite/perovskite four-terminal tandem solar cell with an efficiency over 26%is achieved.Our work provides a feasible approach for the fabrication of efficient tandem solar cells.展开更多
Phonon bandgap typically has a significant effect on phonon-phonon scattering process.In this work,the effects of mass modified phonon bandgap inθ-phase Ta N are systemically investigated by the means of first-princi...Phonon bandgap typically has a significant effect on phonon-phonon scattering process.In this work,the effects of mass modified phonon bandgap inθ-phase Ta N are systemically investigated by the means of first-principles calculations with linearized Boltzmann transport equation.Through detailed calculations,we find that phonon bandgap has a significant effect on three-phonon process while exhibits a much weaker effect on four-phonon process.The reason for the ultrahigh thermal conductivity ofθ-phase Ta N is the long lifetime of phonons including both three-phonon and four-phonon processes,which originates from the weak phonon anharmonicity and large phonon bandgap-induced small phonon-phonon scattering phase space.This work advances the understanding of phonon bandgap effects on phonon transport.展开更多
This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gainβof the bipolar junction transistor(BJT)and the temperature ...This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gainβof the bipolar junction transistor(BJT)and the temperature as well as reduce the influence of resistance-temperature dependency.Considering the degraded circuit performance caused by the process deviation,the trimmable module of the temperature coefficient(TC)is introduced to improve the circuit stability.The circuit has the advantages of simple structure,high linear stability,high TC accuracy,and trimmable TC.It consumes an area of 0.09 mm^(2)when fabricated by using the 0.25-μm complementary metal-oxide-semiconductor(CMOS)process.The proposed circuit achieves the simulated power supply rejection(PSR)of about-78.7 dB@1 kHz,the measured TC of~4.7 ppm/℃over a wide temperature range from-55℃to 125℃with the 2.5-V single-supply voltage,and the tested line regulation of 0.10 mV/V.Such a high-performance bandgap reference circuit can be widely applied in high-precision and high-reliability electronic systems.展开更多
Uncertainties are unavoidable in practical engineering,and phononic crystals are no exception.In this paper,the uncertainties are treated as the interval parameters,and an interval phononic crystal beam model is estab...Uncertainties are unavoidable in practical engineering,and phononic crystals are no exception.In this paper,the uncertainties are treated as the interval parameters,and an interval phononic crystal beam model is established.A perturbation-based interval finite element method(P-IFEM)and an affine-based interval finite element method(A-IFEM)are proposed to study the dynamic response of this interval phononic crystal beam,based on which an interval vibration transmission analysis can be easily implemented and the safe bandgap can be defined.Finally,two numerical examples are investigated to demonstrate the effectiveness and accuracy of the P-IFEM and A-IFEM.Results show that the safe bandgap range may even decrease by 10%compared with the deterministic bandgap without considering the uncertainties.展开更多
Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a ...Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.展开更多
Lead-free inorganic copper-silver-bismuth-halide materials have attracted more and more attention due to their environmental friendliness,high element abundance,and low cost.Here,we developed a strategy of one-step ga...Lead-free inorganic copper-silver-bismuth-halide materials have attracted more and more attention due to their environmental friendliness,high element abundance,and low cost.Here,we developed a strategy of one-step gas-solid-phase diffusioninduced reaction to fabricate a series of bandgap-tunable Cu_(a)Agm_(1)Bim_(2)I_(n)/CuI bilayer films due to the atomic diffusion effect for the first time.By designing and regulating the sputtered Cu/Ag/Bi metal film thickness,the bandgap of Cu_(a)Agm_(1)Bim_(2)I_(n)/CuI could be reduced from 2.06 to 1.78 eV.Solar cells with the structure of FTO/TiO_(2)/Cu_(a)Agm_(1)Bim_(2)I_(n)/CuI/carbon were constructed,yielding a champion power conversion efficiency of 2.76%,which is the highest reported for this class of materials owing to the bandgap reduction and the peculiar bilayer structure.The current work provides a practical path for developing the next generation of efficient,stable,and environmentally friendly photovoltaic materials.展开更多
In this article,we present a theoretical study on the sub-bandgap refractive indexes and optical properties of Sidopedβ-Ga_(2)O_(3) thin films based on newly developed models.The measured sub-bandgap refractive index...In this article,we present a theoretical study on the sub-bandgap refractive indexes and optical properties of Sidopedβ-Ga_(2)O_(3) thin films based on newly developed models.The measured sub-bandgap refractive indexes ofβ-Ga_(2)O_(3) thin film are explained well with the new model,leading to the determination of an explicit analytical dispersion of refractive indexes for photon energy below an effective optical bandgap energy of 4.952 eV for theβ-Ga_(2)O_(3) thin film.Then,the oscillatory structures in long wavelength regions in experimental transmission spectra of Si-dopedβ-Ga_(2)O_(3) thin films with different Si doping concentrations are quantitively interpreted utilizing the determined sub-bandgap refractive index dispersion.Meanwhile,effective optical bandgap values of Si-dopedβ-Ga_(2)O_(3) thin films are further determined and are found to decrease with increasing the Si doping concentration as expectedly.In addition,the sub-bandgap absorption coefficients of Si-dopedβ-Ga_(2)O_(3) thin film are calculated under the frame of the Franz–Keldysh mechanism due to the electric field effect of ionized Si impurities.The theoretical absorption coefficients agree with the available experimental data.These key parameters obtained in the present study may enrich the present understanding of the sub-bandgap refractive indexes and optical properties of impurity-dopedβ-Ga_(2)O_(3) thin films.展开更多
As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and l...As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.展开更多
A new photonic bandgap (PBG) cover for a patch antenna with a photonic bandgap substrate is introduced. The plane wave expansion method and the FDTD method were used to calculate such an antenna system. Numerical re-s...A new photonic bandgap (PBG) cover for a patch antenna with a photonic bandgap substrate is introduced. The plane wave expansion method and the FDTD method were used to calculate such an antenna system. Numerical re-sults for the input return loss, radiation pattern, surface wave, and the directivity of the antennas are presented. A com-parison between the conventional patch antenna and the new PBG antenna is given. It is shown that the new PBG cover is very efficient for improving the radiation directivity. The physical reasons for the improvement are also given.展开更多
Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features,which opens up new potential for device applications.Here,visible–...Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features,which opens up new potential for device applications.Here,visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys,synthesized by a simple and controllable chemical solution deposition method,are reported.The graded bandgaps,arising from the spatial grading of Se composition and thickness within a single domain,are tuned from 1.83 to 1.73 eV,leading to the formation of a homojunction with a builtin electric field.Consequently,a strong and sensitive gate-modulated photovoltaic effect is demonstrated,enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1,a specific detectivity up to^10^11 Jones,and an on/off ratio up to^10^4.Remarkably,when illuminated by the lights ranging from 405 to 808 nm,the biased devices yield a champion photoresponsivity of 191.5 A W−1,a specific detectivity up to^1012 Jones,a photoconductive gain of 10^6–10^7,and a photoresponsive time in the order of^50 ms.These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.展开更多
A high-PSRR high-order curvature-compensated CMOS bandgap voltage reference( BGR),which has the performances of high power supply rejection ratio( PSRR) and low temperature coefficient,is designed in SMIC 0. 18 μm CM...A high-PSRR high-order curvature-compensated CMOS bandgap voltage reference( BGR),which has the performances of high power supply rejection ratio( PSRR) and low temperature coefficient,is designed in SMIC 0. 18 μm CMOS process. Compared to the conventional curvature-compensated BGR which adopted a piecewise-linear current,the temperature characterize of the proposed BGR is effectively improved by adopting two kinds of current including a piecewise-linear current and a current proportional 1. 5 party to the absolute temperature T. By adopting a low dropout( LDO) regulator whose output voltage is the operating supply voltage of the proposed BGR core circuit instead of power supply voltage VDD,the proposed BGR with LDO regulator achieves a well PSRR performance than the BGR without LDO regulator. Simulation results show that the proposed BGR with LDO regulator achieves a temperature coefficient of 2. 1 × 10-6/ ℃ with a 1. 8 V power supply voltage and a line regulation of 4. 9 μV / V at 27 ℃. The proposed BGR with LDO regulator at 10 Hz,100 Hz,1 k Hz,10 k Hz and 100 k Hz have the PSRR of- 106. 388,- 106. 388,- 106. 38,- 105. 93 and-88. 67 d B respectively.展开更多
A lowtemperature coefficient( TC) bandgap reference( BGR) with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of BGR ...A lowtemperature coefficient( TC) bandgap reference( BGR) with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of BGR achieves fine adjustment step towards the reference voltage,while keeping optimal TC by utilizing large resistance to help layout match. The high-order curvature compensation realized by poly and p-diffusion resistors is introduced into the design to guarantee the temperature characteristic. Implemented in 180 nm technology,the proposed BGR has been simulated to have a power supply rejection ratio( PSRR) of 91 dB@100 Hz. The calibration technique covers output voltage scope of 0. 49 V-0. 56 Vwith TC of 9. 45 × 10^(-6)/℃-9. 56 × 10^(-6)/℃ over the temperature range of-40 ℃-120 ℃. The designed BGR provides a reference voltage of 500 mV,with measured TC of 10. 1 × 10^(-6)/℃.展开更多
Benefiting from the superior optoelectronic properties and low-cost manufacturing techniques,mixedhalide wide bandgap(WBG)perovskite solar cells(PSCs)are currently considered as ideal top cells for fabricating multi-j...Benefiting from the superior optoelectronic properties and low-cost manufacturing techniques,mixedhalide wide bandgap(WBG)perovskite solar cells(PSCs)are currently considered as ideal top cells for fabricating multi-junction or tandem solar cells,which are designed to beyond the Shockley-Queisser(S-Q)limit of single-junction solar cells.However,the poor long-term operational stability of WBG PSCs limits their further employment and hinders the marketization of multi-junction or tandem solar cells.In this review,recent progresses on improving environmental stability of mixed-halide WBG PSCs through different strategies,including compositional engineering,additive engineering,interface engineering,and other strategies,are summarized.Then,the outlook and potential direction are discussed and explored to promote the further development of WBG PSCs and their applications in multijunction or tandem solar cells.展开更多
We investigated the structural and optical properties of amorphous-SiGe thin films synthesized via a low-cost, high-growth rate deposition method. Films were formed by e-beam evaporation of mixed pellets of Si and Ge....We investigated the structural and optical properties of amorphous-SiGe thin films synthesized via a low-cost, high-growth rate deposition method. Films were formed by e-beam evaporation of mixed pellets of Si and Ge. Film composition was varied by changing the weight ratio of Si and Ge pellets mixture. Films were amorphous with a composition uniform. Ge-rich films are in tensile stress, while Si-rich films are in compressive stress. As the Ge fraction increases (from 22 at.% to 94 at.%), the optical bandgap decreases (from 1.7 eV to 0.9 eV) and the photosensitivity of the films extends into IR band of solar spectrum. By changing the weighted ratio of the evaporation source mixture, the bandgap and optical sensitivity of a-SiGe films can be easily tuned. Our studies prove that a-SiGe films are a tunable absorber. This can be used for photo-detector, photovoltaic and microelectronic applications to extend the spectral response.展开更多
基金the supports from the National Natural Science Foundation of China(Nos.62264012,62164009)Inner Mongolia Higher Education Research Project(No.NJZZ22343)+1 种基金Inner Mongolia University Research Foundation for Advanced Talents in 2021(No.10000-21311201/005)the Inner Mongolia Autonomous Region for Advanced Talents in 2020(No.12000-12102628)。
文摘Wide bandgap perovskite solar cells(PSCs)have attracted significant attention because they can be applied to the top cells of tandem solar cells.However,high open-circuit voltage(V_(OC))deficit(>0.4 V)result from poor crystallization and high non-radiative recombination losses become a serious limitation in the pursuit of high performance.Here,the relevance between different Pbl_(2)proportions and performance parameters are revealed through analysis of surface morphology,residual stress,and photostability.The increase of Pbl_(2)proportion promotes crystal growth and reduces the work function of the perovskite film surface and promotes the energy level alignment with the carrier transport layer,which decreased the V_(OC)deficit.However,residual PbI_(2)exacerbated the stress level of perovskite film,and the resulting lattice disorder deteriorated the photostability of the device.Ultimately,after the synergistic passivation of residual PbI_(2)and PEAI,the V_(OC)achieves 1.266 V and V_(OC)deficit is less than 0.4 V,the record value in wide bandgap PSCs.
基金supported by the National Research Foundation of Korea (NRF)the Ministry of Science,ICT (2022M3J1A1085285,2019R1A2C1084010,and 2022R1A2C2006532)the Korea Electric Power Corporation (R20XO02-1)。
文摘Carbazole moiety-based 2PACz([2-(9H-carbazol-9-yl)ethyl]phosphonic acid)self-assembled monolayers(SAMs)are excellent hole-selective contact(HSC)materials with abilities to excel the charge-transferdynamics of perovskite solar cells(PSCs).Herein,we report a facile but powerful method to functionalize the surface of 2PACz-SAM,by which reproducible,highly stable,high-efficiency wide-bandgap PSCs can be obtained.The 2PACz surface treatment with various donor number solvents improves assembly of 2PACz-SAM and leave residual surface-bound solvent molecules on 2PACz-SAM,which increases perovskite grain size,retards halide segregation,and accelerates hole extraction.The surface functionalization achieves a high power conversion efficiency(PCE)of 17.62%for a single-junction wide-bandgap(~1.77 e V)PSC.We also demonstrate a monolithic all-perovskite tandem solar cell using surfaceengineered HSC,showing high PCE of 24.66%with large open-circuit voltage of 2.008 V and high fillfactor of 81.45%.Our results suggest this simple approach can further improve the tandem device,when coupled with a high-performance narrow-bandgap sub-cell.
基金Project support from the National Natural Science Foundation of China(Grant No.11604254)the Natural Science Foundation of Shaanxi ProvinceChina(Grant No.2019JQ-240)。
文摘Theβ-LiGaO_(2)with an orthorhombic wurtzite-derived structure is a candidate ultrawide direct-bandgap semiconductor.In this work,using the non-adiabatic Allen-Heine-Cardona approach,we investigate the bandgap renormalization arising from electron-phonon coupling.We find a sizable zero-point motion correction of-0.362 eV to the gap atΓ,which is dominated by the contributions of long-wavelength longitudinal optical phonons.The bandgap ofβ-LiGaO_(2)decreases monotonically with increasing temperature.We investigate the optical spectra by comparing the model Bethe-Salpether equation method with the independent-particle approximation.The calculated optical spectra including electron-hole interactions exhibit strong excitonic effects,in qualitative agreement with the experiment.The contributing interband transitions and the binding energy for the excitonic states are analyzed.
基金supported by the National High Technology Research and Development Program(2015AA050601)the National Natural Science Foundation of China(61904126,12134010,12174290)。
文摘Wide-bandgap(WBG)perovskites have been attracting much attention because of their immense potential as a front light-absorber for tandem solar cells.However,WBG perovskite solar cells(PSCs)generally exhibit undesired large open-circuit voltage(VOC)loss due to light-induced phase segregation and severe non-radiative recombination loss.Herein,antimony potassium tartrate(APTA)is added to perovskite precursor as a multifunctional additive that not only coordinates with unbonded lead but also inhibits the migration of halogen in perovskite,which results in suppressed non-radiative recombination,inhibited phase segregation and better band energy alignment.Therefore,a APTA auxiliary WBG PSC with a champion photoelectric conversion efficiency of 20.35%and less hysteresis is presented.They maintain 80%of their initial efficiencies under 100 mW cm^(-2)white light illumination in nitrogen after 1,000 h.Furthermore,by combining a semi-transparent WBG perovskite front cell with a narrow-bandgap tin–lead PSC,a perovskite/perovskite four-terminal tandem solar cell with an efficiency over 26%is achieved.Our work provides a feasible approach for the fabrication of efficient tandem solar cells.
基金Project supported by the National Natural Science Foundation of China(Grant No.52206092)the Natural Science Foundation of Jiangsu Province+5 种基金China(Grant No.BK20210565)funded by the Department of Science and Technology of Jiangsu Province(Grant No.BK20220032)the Basic Science(Natural Science)Research Project of Higher Education Institutions of Jiangsu Province,China(Grant No.21KJB470009)Nanjing Science and Technology Innovation Project for Overseas Studentsthe“Shuangchuang”Doctor Program of Jiangsu Province,China(Grant No.JSSCBS20210315)the Open Research Fund of Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments,Southeast University(Grant No.KF202010)。
文摘Phonon bandgap typically has a significant effect on phonon-phonon scattering process.In this work,the effects of mass modified phonon bandgap inθ-phase Ta N are systemically investigated by the means of first-principles calculations with linearized Boltzmann transport equation.Through detailed calculations,we find that phonon bandgap has a significant effect on three-phonon process while exhibits a much weaker effect on four-phonon process.The reason for the ultrahigh thermal conductivity ofθ-phase Ta N is the long lifetime of phonons including both three-phonon and four-phonon processes,which originates from the weak phonon anharmonicity and large phonon bandgap-induced small phonon-phonon scattering phase space.This work advances the understanding of phonon bandgap effects on phonon transport.
文摘This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gainβof the bipolar junction transistor(BJT)and the temperature as well as reduce the influence of resistance-temperature dependency.Considering the degraded circuit performance caused by the process deviation,the trimmable module of the temperature coefficient(TC)is introduced to improve the circuit stability.The circuit has the advantages of simple structure,high linear stability,high TC accuracy,and trimmable TC.It consumes an area of 0.09 mm^(2)when fabricated by using the 0.25-μm complementary metal-oxide-semiconductor(CMOS)process.The proposed circuit achieves the simulated power supply rejection(PSR)of about-78.7 dB@1 kHz,the measured TC of~4.7 ppm/℃over a wide temperature range from-55℃to 125℃with the 2.5-V single-supply voltage,and the tested line regulation of 0.10 mV/V.Such a high-performance bandgap reference circuit can be widely applied in high-precision and high-reliability electronic systems.
基金the National Natural Science Foundation of China(Nos.12272172 and 11847009)the Natural Science Foundation of Jiangsu Higher Education Institutions of China(No.22KJB580005)+1 种基金the Youth Talent Promotion Project from China Association for Science and Technology(No.2022QNRC001)the Priority Academic Program Development of Jiangsu Higher Education Institutions of China。
文摘Uncertainties are unavoidable in practical engineering,and phononic crystals are no exception.In this paper,the uncertainties are treated as the interval parameters,and an interval phononic crystal beam model is established.A perturbation-based interval finite element method(P-IFEM)and an affine-based interval finite element method(A-IFEM)are proposed to study the dynamic response of this interval phononic crystal beam,based on which an interval vibration transmission analysis can be easily implemented and the safe bandgap can be defined.Finally,two numerical examples are investigated to demonstrate the effectiveness and accuracy of the P-IFEM and A-IFEM.Results show that the safe bandgap range may even decrease by 10%compared with the deterministic bandgap without considering the uncertainties.
文摘Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.
基金supported by National Natural Science Foundation of China(Grant No.52072327,62074052,61874159)Zhongyuan Thousand Talents(Zhongyuan Scholars)Program of Henan Province(202101510004)+6 种基金Higher Education and Teaching Reformation Project(2014SJGLX064)Academic Degrees&Graduate Education Reform Project of Henan Province(2021SJGLX060Y)Key research and development projects of Universities in Henan Province(20A140026)the Scientific Research Innovation Team of Xuchang University(2022CXTD008)Science and Technology Project of Henan Province(222102230009).L.Ding thanks the National Key Research and Development Program of China(2022YFB3803300)the open research fund of Songshan Lake Materials Laboratory(2021SLABFK02)the National Natural Science Foundation of China(21961160720).
文摘Lead-free inorganic copper-silver-bismuth-halide materials have attracted more and more attention due to their environmental friendliness,high element abundance,and low cost.Here,we developed a strategy of one-step gas-solid-phase diffusioninduced reaction to fabricate a series of bandgap-tunable Cu_(a)Agm_(1)Bim_(2)I_(n)/CuI bilayer films due to the atomic diffusion effect for the first time.By designing and regulating the sputtered Cu/Ag/Bi metal film thickness,the bandgap of Cu_(a)Agm_(1)Bim_(2)I_(n)/CuI could be reduced from 2.06 to 1.78 eV.Solar cells with the structure of FTO/TiO_(2)/Cu_(a)Agm_(1)Bim_(2)I_(n)/CuI/carbon were constructed,yielding a champion power conversion efficiency of 2.76%,which is the highest reported for this class of materials owing to the bandgap reduction and the peculiar bilayer structure.The current work provides a practical path for developing the next generation of efficient,stable,and environmentally friendly photovoltaic materials.
基金This study was financially supported by the National Natural Science Foundation of China(No.12074324)the Shenzhen Municipal Science and Technology Innovation Council(No.JCJY20180508163404043).
文摘In this article,we present a theoretical study on the sub-bandgap refractive indexes and optical properties of Sidopedβ-Ga_(2)O_(3) thin films based on newly developed models.The measured sub-bandgap refractive indexes ofβ-Ga_(2)O_(3) thin film are explained well with the new model,leading to the determination of an explicit analytical dispersion of refractive indexes for photon energy below an effective optical bandgap energy of 4.952 eV for theβ-Ga_(2)O_(3) thin film.Then,the oscillatory structures in long wavelength regions in experimental transmission spectra of Si-dopedβ-Ga_(2)O_(3) thin films with different Si doping concentrations are quantitively interpreted utilizing the determined sub-bandgap refractive index dispersion.Meanwhile,effective optical bandgap values of Si-dopedβ-Ga_(2)O_(3) thin films are further determined and are found to decrease with increasing the Si doping concentration as expectedly.In addition,the sub-bandgap absorption coefficients of Si-dopedβ-Ga_(2)O_(3) thin film are calculated under the frame of the Franz–Keldysh mechanism due to the electric field effect of ionized Si impurities.The theoretical absorption coefficients agree with the available experimental data.These key parameters obtained in the present study may enrich the present understanding of the sub-bandgap refractive indexes and optical properties of impurity-dopedβ-Ga_(2)O_(3) thin films.
基金supported by the National Natural Science Foundation of China(Nos.61521064,61522408,61574169,6 1334007,61474136,61574166)the Ministry of Science andTechnology of China(Nos.2016YFA0201803,2016YFA0203800,2017YFB0405603)+2 种基金the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Nos.QYZDB-SSWJSC048,QYZDY-SSW-JSC001)the Beijing Municipal Science and Technology Project(No.Z171100002017011)the Opening Project of the Key Laboratory of Microelectronic Devices&Integration Technology,Institute of Microelectronics of Chinese Academy of Sciences
文摘As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.
文摘A new photonic bandgap (PBG) cover for a patch antenna with a photonic bandgap substrate is introduced. The plane wave expansion method and the FDTD method were used to calculate such an antenna system. Numerical re-sults for the input return loss, radiation pattern, surface wave, and the directivity of the antennas are presented. A com-parison between the conventional patch antenna and the new PBG antenna is given. It is shown that the new PBG cover is very efficient for improving the radiation directivity. The physical reasons for the improvement are also given.
基金supported by Grants from the UK EPSRC Future Compound Semiconductor Manufacturing Hub(EP/P006973/1)the financial support from EPSRC(EP/L018330/1,EP/N032888/1)+3 种基金the U.S.Army Research Laboratory under Cooperative Agreement Number W911NF-16-2-0120the “973 Program—the National Basic Research Program of China” Special Funds for the Chief Young Scientis(2015CB358600)the Excellent Young Scholar Fund from National Natural Science Foundation of China(21422103)the China Scholarship Council(CSC)
文摘Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features,which opens up new potential for device applications.Here,visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys,synthesized by a simple and controllable chemical solution deposition method,are reported.The graded bandgaps,arising from the spatial grading of Se composition and thickness within a single domain,are tuned from 1.83 to 1.73 eV,leading to the formation of a homojunction with a builtin electric field.Consequently,a strong and sensitive gate-modulated photovoltaic effect is demonstrated,enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1,a specific detectivity up to^10^11 Jones,and an on/off ratio up to^10^4.Remarkably,when illuminated by the lights ranging from 405 to 808 nm,the biased devices yield a champion photoresponsivity of 191.5 A W−1,a specific detectivity up to^1012 Jones,a photoconductive gain of 10^6–10^7,and a photoresponsive time in the order of^50 ms.These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.
基金Sponsored by the National Natural Science Foundation of China(Grant No.61471075)the 2013 Program for Innovation Team Building at Institutions of Higher Education in Chongqing(The Innovation Team of Smart Medical System and Key Technology)
文摘A high-PSRR high-order curvature-compensated CMOS bandgap voltage reference( BGR),which has the performances of high power supply rejection ratio( PSRR) and low temperature coefficient,is designed in SMIC 0. 18 μm CMOS process. Compared to the conventional curvature-compensated BGR which adopted a piecewise-linear current,the temperature characterize of the proposed BGR is effectively improved by adopting two kinds of current including a piecewise-linear current and a current proportional 1. 5 party to the absolute temperature T. By adopting a low dropout( LDO) regulator whose output voltage is the operating supply voltage of the proposed BGR core circuit instead of power supply voltage VDD,the proposed BGR with LDO regulator achieves a well PSRR performance than the BGR without LDO regulator. Simulation results show that the proposed BGR with LDO regulator achieves a temperature coefficient of 2. 1 × 10-6/ ℃ with a 1. 8 V power supply voltage and a line regulation of 4. 9 μV / V at 27 ℃. The proposed BGR with LDO regulator at 10 Hz,100 Hz,1 k Hz,10 k Hz and 100 k Hz have the PSRR of- 106. 388,- 106. 388,- 106. 38,- 105. 93 and-88. 67 d B respectively.
基金Supported by the National Natural Science Foundation of China(61604109)the National High-Tech R&D Program of China(2015AA042605)
文摘A lowtemperature coefficient( TC) bandgap reference( BGR) with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of BGR achieves fine adjustment step towards the reference voltage,while keeping optimal TC by utilizing large resistance to help layout match. The high-order curvature compensation realized by poly and p-diffusion resistors is introduced into the design to guarantee the temperature characteristic. Implemented in 180 nm technology,the proposed BGR has been simulated to have a power supply rejection ratio( PSRR) of 91 dB@100 Hz. The calibration technique covers output voltage scope of 0. 49 V-0. 56 Vwith TC of 9. 45 × 10^(-6)/℃-9. 56 × 10^(-6)/℃ over the temperature range of-40 ℃-120 ℃. The designed BGR provides a reference voltage of 500 mV,with measured TC of 10. 1 × 10^(-6)/℃.
基金the National Natural Science Foundation of China(Grant Nos.51602149,61705102,61605073,61935017,91833304,and 91733302)the Natural Science Foundation of Jiangsu Province for Distinguished Young Scholars,China(Grant BK20200034)+5 种基金the Projects of International Cooperation and Exchanges NSFC(51811530018)the Startup Research Foundation from Nanjing Tech University(3827401783,3983500196)the Young 1000 Talents Global Recruitment Program of Chinathe Jiangsu Specially-Appointed Professor programthe“Six talent peaks”Project in Jiangsu Province,Chinafunding from the Deutsche Forschungsgemeinschaft(DFG,German Research Foundation)under Germanys Excellence Strategy-EXC 2089/1-390776260(e-conversion)。
文摘Benefiting from the superior optoelectronic properties and low-cost manufacturing techniques,mixedhalide wide bandgap(WBG)perovskite solar cells(PSCs)are currently considered as ideal top cells for fabricating multi-junction or tandem solar cells,which are designed to beyond the Shockley-Queisser(S-Q)limit of single-junction solar cells.However,the poor long-term operational stability of WBG PSCs limits their further employment and hinders the marketization of multi-junction or tandem solar cells.In this review,recent progresses on improving environmental stability of mixed-halide WBG PSCs through different strategies,including compositional engineering,additive engineering,interface engineering,and other strategies,are summarized.Then,the outlook and potential direction are discussed and explored to promote the further development of WBG PSCs and their applications in multijunction or tandem solar cells.
文摘We investigated the structural and optical properties of amorphous-SiGe thin films synthesized via a low-cost, high-growth rate deposition method. Films were formed by e-beam evaporation of mixed pellets of Si and Ge. Film composition was varied by changing the weight ratio of Si and Ge pellets mixture. Films were amorphous with a composition uniform. Ge-rich films are in tensile stress, while Si-rich films are in compressive stress. As the Ge fraction increases (from 22 at.% to 94 at.%), the optical bandgap decreases (from 1.7 eV to 0.9 eV) and the photosensitivity of the films extends into IR band of solar spectrum. By changing the weighted ratio of the evaporation source mixture, the bandgap and optical sensitivity of a-SiGe films can be easily tuned. Our studies prove that a-SiGe films are a tunable absorber. This can be used for photo-detector, photovoltaic and microelectronic applications to extend the spectral response.
