In this paper, the effects of different boron (nitrogen)-doping on the electronic properties of blue phosphorene have been investigated by the first-</span></span><span><span><span style=&qu...In this paper, the effects of different boron (nitrogen)-doping on the electronic properties of blue phosphorene have been investigated by the first-</span></span><span><span><span style="font-family:""> </span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">principles calculations. We have taken eight doping configurations into account, the calculated results show that the bond length of P-B is decreasing with the doping concentration increasing. For the four boron atoms doping configuration, the geometric structure appears the distinct distortion. The band gap is decreasing with the doping concentration increasing, and it appears the transition from indirect band gap to direct band gap for boron doping configurations. It is hoped that the calculated results may be useful for designing electronic devices based on blue phosphorene.展开更多
Body-centered cubic(BCC)multi-principal element alloys(MPEAs)have intrinsic high strength but poor ductility,which greatly limits their potential applications.Here we present the boron-doping strategy to enhance the s...Body-centered cubic(BCC)multi-principal element alloys(MPEAs)have intrinsic high strength but poor ductility,which greatly limits their potential applications.Here we present the boron-doping strategy to enhance the strength and ductility of TiZrNb MPEAs simultaneously.The yield strength and ductility of the TiZrNb MPEA with boron addition of 500 ppm are increased by 19.0%and 48.7%compared to the boron-free TiZrNb MPEA,respectively.Boron-doping induced high efficiency in grain refinement from~96.0μm to~16.2μm is the main factor for strengthening.Dislocation dominated deformation mechanism involving cross slip and dislocation pining in the TiZrNb containing 500 ppm boron serves to enhance the strain-hardening capacity,resultant the enhancement of ductility from 7.8%to 11.6%.While the planar slip of dislocations is the dominated deformation mechanism for the boron-free TiZrNb.展开更多
Boron-doped diamond （BDD） electrocatalysis is combined with photocatalysis using titanium dioxide （TiO2） as a catalyst to improve pollutant-oxidation efficiency. Phenol solution is chosen as model wastewater. Diff...Boron-doped diamond （BDD） electrocatalysis is combined with photocatalysis using titanium dioxide （TiO2） as a catalyst to improve pollutant-oxidation efficiency. Phenol solution is chosen as model wastewater. Different methods involving BDD and/or TiO2 during the degradation processes are compared. Parameters such as the currency density and initial concentration are varied in order to determine their effects on the oxidation process. Moreover, the degradation kinetics of phenol is experimentally studied. The results reveal the superiority of series combination of BDD and TiO2, especially the treatment process of electrocatalysis and succedent photocatalysis, and the optimum working currency density for electrocatalysis is 25.48 mA/cm2. The removal rate decreases with the increase in the initial phenol concentration and the degradation reaction follows quasi-first-order kinetics equation.展开更多
In this study,the electrochemical oxidation of reactive brilliant orange X-GN dye with a boron-doped diamond(BDD)anode was investigated.The BDD electrodes were deposited on the niobium(Nb)substrates by the hot filamen...In this study,the electrochemical oxidation of reactive brilliant orange X-GN dye with a boron-doped diamond(BDD)anode was investigated.The BDD electrodes were deposited on the niobium(Nb)substrates by the hot filament chemical vapor deposition method.The effects of processing parameters,such as film thickness,current density,supporting electrolyte concentration,initial solution pH,solution temperature,and initial dye concentration,were evaluated following the variation in the degradation efficiency.The microstructure and the electrochemical property of BDD were characterized by scanning electron microscopy,Raman spectroscopy,and electrochemical workstation;and the degradation of X-GN was estimated using UV-Vis spectrophotometry.Further,the results indicated that the film thickness of BDD had a significant impact on the electrolysis of X-GN.After 3 h of treatment,100%color and 63.2%total organic carbon removal was achieved under optimized experimental conditions:current density of 100 mA/cm2,supporting electrolyte concentration of 0.05 mol/L,initial solution pH 3.08,and solution temperature of 60°C.展开更多
The anodic oxidation of aqueous solutions containing dimethyl phthalate （DMP） up to 125 mg/L with sodium sulfate （Na2SO4） as supporting electrolyte within the pH range 2.0-10.0 was studied using a one-compartment ...The anodic oxidation of aqueous solutions containing dimethyl phthalate （DMP） up to 125 mg/L with sodium sulfate （Na2SO4） as supporting electrolyte within the pH range 2.0-10.0 was studied using a one-compartment batch reactor employing a boron-doped diamond （BDD） as anode. Electrolyses were carded out at constant current density （1.5-4.5 mA/cm^2）. Complete mineralization was always achieved owing to the great concentration of hydroxyl radical （-OH） generated at the BDD surface. The effects of pH, apparent current density and initial DMP concentration on the degradation rate of DMP, the specific charge required for its total mineralization and mineralization current efficiency were investigated systematically. The mineralization rate of DMP was found to be pH-independent and to increase with increasing applied current density. Results indicated that this electrochemical process was subjected, at least partially, to the mass transfer of organics onto the BDD surface. Kinetic analysis of the temporal change of DMP concentration during electrolysis determined by High Performance Liquid Chromatography （HPLC） revealed that DMP decay under all tested conditions followed a pseudo first-order reaction. Aromatic intermediates and generated carboxylic acids were identified by Gas Chromatography- Mass Spectrometry （GC-MS） and a general pathway for the electrochemical incineration of DMP on BDD was proposed.展开更多
The electrochemical treatment of wastewater containing chlorophenols （2-monochlorophenol, 4-monochlorophenol, 2,4-dichlorophenol, 2,4,6-trichlorophenol） was carried out experimentally with synthetic boron-d0ped diam...The electrochemical treatment of wastewater containing chlorophenols （2-monochlorophenol, 4-monochlorophenol, 2,4-dichlorophenol, 2,4,6-trichlorophenol） was carried out experimentally with synthetic boron-d0ped diamond （BDD） thin film electrodes. Current vs time curves under different cell voltages were measured. Removal rate of COD, instant current efficiency （ICE） and energy consumption were investigated under different current densities. The influence of supporting media is reported, which plays an important role in determining the global oxidation rate. The oxidative chloride is stronger than peroxodisulphate. The electrochemical characteristics of boron-doped diamond electrodes were investigated in comparison with active coating Ti substrate anode （ACT）. The experimental results show that BDD is markedly superior to ACT due to its different absorption properties.展开更多
High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The mo...High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond.展开更多
Highly conductive boron-doped hydrogenated mieroerystalline silicon （μc-Si：H） films are prepared by very high frequency plasma enhanced chemical vapour deposition （VHF PECVD） at the substrate temperatures （Ts）...Highly conductive boron-doped hydrogenated mieroerystalline silicon （μc-Si：H） films are prepared by very high frequency plasma enhanced chemical vapour deposition （VHF PECVD） at the substrate temperatures （Ts） ranging from 90℃ to 270℃. The effects of Ts on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical （dark conductivity, carrier concentration and Hall mobility） and structural （crystallinity and grain size） properties are all strongly dependent on Ts. As Ts increases, it is observed that 1） the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at Ts=210℃, 2） the crystalline volume fraction （Xc） and the grain size increase initially, then reach their maximum values at TS=140℃, and finally decrease, 3） the dark conductivity （σd）, carrier concentration and Hall mobility have a similar dependence on Ts and arrive at their maximum values at Ts-190℃. In addition, it is also observed that at a lower substrate temperature Ts, a higher dopant concentration is required in order to obtain a maximum σd.展开更多
Boron-doped Ketjenblack is attempted as cathode catalyst for non-aqueous rechargeable Li–O2 batteries. The boron-doped Ketjenblack delivers an extremely high discharge capacity of 7193 m Ah/g at a current density of ...Boron-doped Ketjenblack is attempted as cathode catalyst for non-aqueous rechargeable Li–O2 batteries. The boron-doped Ketjenblack delivers an extremely high discharge capacity of 7193 m Ah/g at a current density of 0.1 m A/cm2, and the capacity is about 2.3 times as that of the pristine KB. When the batteries are cycled with different restricted capacity, the boron-doped Ketjenblack based cathodes exhibits higher discharge platform and longer cycle life than Ketjenblack based cathodes. Additionally, the boron-doped Ketjenblack also shows a superior electrocatalytic activity for oxygen reduction in 0.1 mol/L KOH aqueous solution. The improvement in catalytic activity results from the defects and activation sites introduced by boron doping.展开更多
Chemically robust conductive p-type boron-doped diamond （BDD） films are an important electrode material and have been widely applied in electrochemistry. In this study, BDD films are taken as a two-dimensional （2D...Chemically robust conductive p-type boron-doped diamond （BDD） films are an important electrode material and have been widely applied in electrochemistry. In this study, BDD films are taken as a two-dimensional （2D） electrode in a eleetrophoresis tank system instead of the conventional one-dimensional platinum wire electrode. The theoretical simulations by finite element numerical analysis reveal that the 2D BDD electrodes have relatively high intensity and uniformity of electric field in the tank. Experimentally, the 2D BDD electrodes with smaller size show excellent properties for the separation of DNA fragments. The advantages of the 2D BDD electrodes with chemical inertness, sustainability, high intensity and uniformity electronic field, as well as reduced small size of electrophoresis tank would open a possibility for realizing new generation, high-performance biological devices.展开更多
Highly boron-doped diamond films were deposited on porous titanium substrates by hot filament chemical vapor deposition technique. The morphology variation of highly boron-doped diamond films grown on porous titanium ...Highly boron-doped diamond films were deposited on porous titanium substrates by hot filament chemical vapor deposition technique. The morphology variation of highly boron-doped diamond films grown on porous titanium substrates was investigated, and the effects of carbon concentration on nucleation density and diamond growth were also studied. The continuous change of surface morphology and structure of diamond film were characterized by scanning electron microscopy. The structures of diamond film and interlayer were analyzed by X-ray diffraction. The quality of boron-doped diamond film was confirmed by visible Raman spectroscopy. The experimental results reveal that surface morphology and quality of boron-doped diamond films are various due to the change of carbon concentration. The thickness of intermediate layer decreases with the carbon concentration increasing.展开更多
Theoretical study on the supramolecular complexes formed between boron-doped het- erofullerene （C59B） and zinc porphine （ZnF）, namely C59B-ZnP and its anion species C59B-ZnP, was performed by density functional th...Theoretical study on the supramolecular complexes formed between boron-doped het- erofullerene （C59B） and zinc porphine （ZnF）, namely C59B-ZnP and its anion species C59B-ZnP, was performed by density functional theory calculation at wB97XD/6-31G（d） level. Strong interaction between porphyrin and heterofullerene moiety was predicted for these complexes based on geometry and electronic structure analysis. Especially, pseudobonding interaction occurring between the B atom of fullerene and the N atom of porphyrin was predicted to occur in C59B-ZnP complex, but be broken in C59B-ZnP complex. Time-dependent density functional theory calculation manifests the redshift of electron absorption for ZnP upon the interaction with heterofullerene.展开更多
Hill-like polycrystalline diamond grains(HPDGs)randomly emerged on a heavy boron-doped p+single-crystal diamond(SCD)film by prolonging the growth duration of the chemical vapor deposition process.The Raman spectral re...Hill-like polycrystalline diamond grains(HPDGs)randomly emerged on a heavy boron-doped p+single-crystal diamond(SCD)film by prolonging the growth duration of the chemical vapor deposition process.The Raman spectral results confirm that a relatively higher boron concentration(~1.1×10^(21) cm^(-3))is detected on the HPDG with respect to the SCD region(~5.4×10^(20) cm^(-3)).It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination.The current-voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination,which means that the HPDGs provide a leakage path to form an ohmic contact.There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions.The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.展开更多
Using diborane as doping gas, p-doped μc-Si：H layers are deposited by using the plasma enhanced chemical vapour deposition （PECVD） technology. The effects of deposition pressure and plasma power on the growth and ...Using diborane as doping gas, p-doped μc-Si：H layers are deposited by using the plasma enhanced chemical vapour deposition （PECVD） technology. The effects of deposition pressure and plasma power on the growth and the properties of μc-Si：H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped μc-Si：H films with a dark conductivity as high as 1.42 Ω^-1·cm^-1 and a crystallinity of above 50% are obtained. With this p-layer, μc-Si：H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped μc-Si：H layers is discussed.展开更多
The direct detection of clenbuterol（CL） in pig liver without any extraction separation at a pyrrole-DNA modified boron-doped diamond（BDD） electrode is reported. The pyrrole-DNA modified BDD electrode has a strong ...The direct detection of clenbuterol（CL） in pig liver without any extraction separation at a pyrrole-DNA modified boron-doped diamond（BDD） electrode is reported. The pyrrole-DNA modified BDD electrode has a strong electrocatalytic effect on the redox reaction of CL. One oxidization and two reduction peaks of CL appear at 340. 2, 299. 8 and 166. 6 mV（ versus SCE）, respectively. The pyrrole polymer alone cannot electrocatalyze the above reaction at a BDD electrode ; the electrocatalytic effect of a BDD electrode modified with DNA membrane is unsufficient for the analytical detection of CL; the replacement of boron-doped diamond by glass carbon makes the electrocatalytic reaction impossible ; the redox process is pH dependent. The influences of various experimental parameters on the pyrrole-DNA modified BDD electrode were investigated. A sensitive cyclic vohammetric response for CL was obtained in a linear range from 3.4 × 10^-6 to 5 × 10^ -4 mol/L with a detection limit of 8.5 × 10^-7 mol/L. A mean recovery of 102. 7% of CL in the pig liver sample solution and a reproducibility of 3.2% were obtained.展开更多
Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related pho...Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band（from 0.75eV to 0.90eV） including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.展开更多
In this paper, the adsorption and storage of hydrogen on calcium-decorated, boron-doped bilayer graphene was investigated using first principles calculation. The calcium-decorated bilayer graphene was investigated and...In this paper, the adsorption and storage of hydrogen on calcium-decorated, boron-doped bilayer graphene was investigated using first principles calculation. The calcium-decorated bilayer graphene was investigated and it was shown that the binding energy of H2 molecule adsorbed on the calcium-decorated bilayer graphene is −0.02 eV and the energy does not belong to reversible usage range of −0.2 - −0.6 eV. Substitutional boron doping can improve the adsorption energy of Ca to bilayer graphene with the empty pz orbital of boron atoms. Our calculations show that calcium atoms can be solidly adsorbed on the interlayer (Ca/B/Graphene) and outerlayer (2Ca/B/Graphene and 3Ca/B/Graphene) of B-doped bilayer graphene. Hydrogen molecule binds with Ca/B/Graphene, 2Ca/B/Graphene and 3Ca/B/Graphene system with an energy that belongs to reversible usage range of −0.2 - −0.6 eV. The overlap between Ca 3d and H2σ orbitals just below the Fermi energy demonstrates the charge transfer between the Ca atom and the H atom and the role of hybridization of the 3d orbita of Ca with the σ orbitals of H2 in efficient adsorption of hydrogen molecules. The charge from hydrogen bonding orbital transfers to empty 3d orbitals of the Ca atom, and then from the 3d orbitals of the Ca atom donated to H2σ* antibonding orbital. Hydrogen moleculars can be adsorbed on the interlayer and outerlayer of Ca-decorated B-doped bilayer graphene.展开更多
An electroanalytical method was developed for the direct quantitative determination of paracetamol in tablets based on its oxidation behavior. The electrochemical oxidation and determination of paracetamol were easily...An electroanalytical method was developed for the direct quantitative determination of paracetamol in tablets based on its oxidation behavior. The electrochemical oxidation and determination of paracetamol were easily carried out on born-doped diamond (BDD) electrode using two voltammetric techniques (CV and DPV). The electrochemical measurements performed by cyclic voltammetric (CV) and differential pulse voltammetry (DPV) techniques were carried out using a cathodically pretreated boron-doped diamond electrode in HClO4 and KClO4 electrolytes. HClO4 was then selected for analytical purposes and scan rate studies were also completed. The oxidation of the paracetamol is found to be irreversible and a diffusion-controlled nature of the paracetamol oxidation peak was established. A linear calibration curve for DPV analysis was constructed in the paracetamol concentration range from 0 μM to 13.87 μM, with 0.16 μM and 0.55 μM as the detection and quantification limit respectively.展开更多
A new electroanalytical procedure was developed for the determination of Benzophenone-3 (BENZO) in commercial sunscreen as the active ingredient. The procedure is based on the use of electrochemical methods as cyclic ...A new electroanalytical procedure was developed for the determination of Benzophenone-3 (BENZO) in commercial sunscreen as the active ingredient. The procedure is based on the use of electrochemical methods as cyclic and square-wave voltammetry, with boron-doped diamond (BDD) electrodes. The reduction of BENZO in Britton-Robinson buffer (0.1 mol●L–1) using this type of electrode gives rise to one irreversible peak in –1.30 V (versus Ag/AgCl) in presence of cationic surfactant cetyltrimethylammonium bromide (CTABr). The proposed electrochemical method was successfully applied to the analysis of commercially available pharmaceutical preparations.展开更多
The current efficiency for NF3 formation was independent on the current density in the range of 200 to 1,000 mA·cm^2. The average values of NF3 current efficiencies on the BDD （boron-doped diamond） anode with t...The current efficiency for NF3 formation was independent on the current density in the range of 200 to 1,000 mA·cm^2. The average values of NF3 current efficiencies on the BDD （boron-doped diamond） anode with the boron-concentration of 2,500 ppm were 32.3% at 80℃, 63.3% at 100℃ and 59.7% at 120℃. The best current efficiencies for NF3 formation on the BDD anode with boron-concentrations of 2,500, 5,000 and 7,500 ppm were obtained at 100℃ and those were 63.3%, 73.3% and 56.2%, respectively. Although anode effect occurred on the BDD electrodes covered with a part of the surface of the spiculate structure, which had the boron-concentrations higher than 7,500 ppm, it did not take place on the BDD electrodes covered with the surface of diamond structure, even if the BDD electrode had the boron-concentration of 8,000 ppm.展开更多
文摘In this paper, the effects of different boron (nitrogen)-doping on the electronic properties of blue phosphorene have been investigated by the first-</span></span><span><span><span style="font-family:""> </span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">principles calculations. We have taken eight doping configurations into account, the calculated results show that the bond length of P-B is decreasing with the doping concentration increasing. For the four boron atoms doping configuration, the geometric structure appears the distinct distortion. The band gap is decreasing with the doping concentration increasing, and it appears the transition from indirect band gap to direct band gap for boron doping configurations. It is hoped that the calculated results may be useful for designing electronic devices based on blue phosphorene.
基金the National Key Research and Development Program(No.2018YFB0703402)the Chinese Academy of Sciences(No.ZDBSLY-JSC023)+1 种基金the Liao Ning Revitalization Talents Program(Nos.XLYC1802078 and XLYC1807062)Liaoning Key Research and Development Program(2020JH2/10100013)。
文摘Body-centered cubic(BCC)multi-principal element alloys(MPEAs)have intrinsic high strength but poor ductility,which greatly limits their potential applications.Here we present the boron-doping strategy to enhance the strength and ductility of TiZrNb MPEAs simultaneously.The yield strength and ductility of the TiZrNb MPEA with boron addition of 500 ppm are increased by 19.0%and 48.7%compared to the boron-free TiZrNb MPEA,respectively.Boron-doping induced high efficiency in grain refinement from~96.0μm to~16.2μm is the main factor for strengthening.Dislocation dominated deformation mechanism involving cross slip and dislocation pining in the TiZrNb containing 500 ppm boron serves to enhance the strain-hardening capacity,resultant the enhancement of ductility from 7.8%to 11.6%.While the planar slip of dislocations is the dominated deformation mechanism for the boron-free TiZrNb.
基金The Key Project of Chinese Ministry of Education (No.108601)Major Projects of National Water Pollution Control and Management Technology (No.2009ZX07101-011)Specialized Research Fund for the Doctoral Program of Higher Education (No.20060286010)
文摘Boron-doped diamond （BDD） electrocatalysis is combined with photocatalysis using titanium dioxide （TiO2） as a catalyst to improve pollutant-oxidation efficiency. Phenol solution is chosen as model wastewater. Different methods involving BDD and/or TiO2 during the degradation processes are compared. Parameters such as the currency density and initial concentration are varied in order to determine their effects on the oxidation process. Moreover, the degradation kinetics of phenol is experimentally studied. The results reveal the superiority of series combination of BDD and TiO2, especially the treatment process of electrocatalysis and succedent photocatalysis, and the optimum working currency density for electrocatalysis is 25.48 mA/cm2. The removal rate decreases with the increase in the initial phenol concentration and the degradation reaction follows quasi-first-order kinetics equation.
基金Project(2016YEB0301402) supported by the National Key Research and Development Program of ChinaProject(51601226) supported by the National Natural Science Foundation of China+1 种基金Project supported by the Open-End Fund for the Valuable and Precision Instruments of Central South University,ChinaProject supported by State Key Laboratory of Powder Metallurgy,China
文摘In this study,the electrochemical oxidation of reactive brilliant orange X-GN dye with a boron-doped diamond(BDD)anode was investigated.The BDD electrodes were deposited on the niobium(Nb)substrates by the hot filament chemical vapor deposition method.The effects of processing parameters,such as film thickness,current density,supporting electrolyte concentration,initial solution pH,solution temperature,and initial dye concentration,were evaluated following the variation in the degradation efficiency.The microstructure and the electrochemical property of BDD were characterized by scanning electron microscopy,Raman spectroscopy,and electrochemical workstation;and the degradation of X-GN was estimated using UV-Vis spectrophotometry.Further,the results indicated that the film thickness of BDD had a significant impact on the electrolysis of X-GN.After 3 h of treatment,100%color and 63.2%total organic carbon removal was achieved under optimized experimental conditions:current density of 100 mA/cm2,supporting electrolyte concentration of 0.05 mol/L,initial solution pH 3.08,and solution temperature of 60°C.
基金supported by the National Natural Science Foundation of China (No 50778172) the Funds for Creative Research Groups of China (No 50621804)
文摘The anodic oxidation of aqueous solutions containing dimethyl phthalate （DMP） up to 125 mg/L with sodium sulfate （Na2SO4） as supporting electrolyte within the pH range 2.0-10.0 was studied using a one-compartment batch reactor employing a boron-doped diamond （BDD） as anode. Electrolyses were carded out at constant current density （1.5-4.5 mA/cm^2）. Complete mineralization was always achieved owing to the great concentration of hydroxyl radical （-OH） generated at the BDD surface. The effects of pH, apparent current density and initial DMP concentration on the degradation rate of DMP, the specific charge required for its total mineralization and mineralization current efficiency were investigated systematically. The mineralization rate of DMP was found to be pH-independent and to increase with increasing applied current density. Results indicated that this electrochemical process was subjected, at least partially, to the mass transfer of organics onto the BDD surface. Kinetic analysis of the temporal change of DMP concentration during electrolysis determined by High Performance Liquid Chromatography （HPLC） revealed that DMP decay under all tested conditions followed a pseudo first-order reaction. Aromatic intermediates and generated carboxylic acids were identified by Gas Chromatography- Mass Spectrometry （GC-MS） and a general pathway for the electrochemical incineration of DMP on BDD was proposed.
基金Project(20113282241450) supported by the Science and Technology Program from Ministry of Transport of China
文摘The electrochemical treatment of wastewater containing chlorophenols （2-monochlorophenol, 4-monochlorophenol, 2,4-dichlorophenol, 2,4,6-trichlorophenol） was carried out experimentally with synthetic boron-d0ped diamond （BDD） thin film electrodes. Current vs time curves under different cell voltages were measured. Removal rate of COD, instant current efficiency （ICE） and energy consumption were investigated under different current densities. The influence of supporting media is reported, which plays an important role in determining the global oxidation rate. The oxidative chloride is stronger than peroxodisulphate. The electrochemical characteristics of boron-doped diamond electrodes were investigated in comparison with active coating Ti substrate anode （ACT）. The experimental results show that BDD is markedly superior to ACT due to its different absorption properties.
基金supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51001042)the Doctor Foundation of the Henan Polytechnic University,China (Grant No. 2010-32)
文摘High-quality p-type boron-doped IIb diamond large single crystals are successfully synthesized by the temperature gradient method in a china-type cubic anvil high-pressure apparatus at about 5.5 GPa and 1600 K. The morphologies and surface textures of the synthetic diamond crystals with different boron additive quantities are characterized by using an optical microscope and a scanning electron microscope respectively. The impurities of nitrogen and boron in diamonds are detected by micro Fourier transform infrared technique. The electrical properties including resistivities, Hall coefficients, Hall mobilities and carrier densities of the synthesized samples are measured by a four-point probe and the Hall effect method. The results show that large p-type boron-doped diamond single crystals with few nitrogen impurities have been synthesized. With the increase of quantity of additive boron, some high-index crystal faces such as {113} gradually disappear, and some stripes and triangle pits occur on the crystal surface. This work is helpful for the further research and application of boron-doped semiconductor diamond.
文摘Highly conductive boron-doped hydrogenated mieroerystalline silicon （μc-Si：H） films are prepared by very high frequency plasma enhanced chemical vapour deposition （VHF PECVD） at the substrate temperatures （Ts） ranging from 90℃ to 270℃. The effects of Ts on the growth and properties of the films are investigated. Results indicate that the growth rate, the electrical （dark conductivity, carrier concentration and Hall mobility） and structural （crystallinity and grain size） properties are all strongly dependent on Ts. As Ts increases, it is observed that 1） the growth rate initially increases and then arrives at a maximum value of 13.3 nm/min at Ts=210℃, 2） the crystalline volume fraction （Xc） and the grain size increase initially, then reach their maximum values at TS=140℃, and finally decrease, 3） the dark conductivity （σd）, carrier concentration and Hall mobility have a similar dependence on Ts and arrive at their maximum values at Ts-190℃. In addition, it is also observed that at a lower substrate temperature Ts, a higher dopant concentration is required in order to obtain a maximum σd.
基金supported by the MOST(Grant nos.2013CB934000and 2014DFG71590)Beijing Municipal Program(Grant no.YETP0157)
文摘Boron-doped Ketjenblack is attempted as cathode catalyst for non-aqueous rechargeable Li–O2 batteries. The boron-doped Ketjenblack delivers an extremely high discharge capacity of 7193 m Ah/g at a current density of 0.1 m A/cm2, and the capacity is about 2.3 times as that of the pristine KB. When the batteries are cycled with different restricted capacity, the boron-doped Ketjenblack based cathodes exhibits higher discharge platform and longer cycle life than Ketjenblack based cathodes. Additionally, the boron-doped Ketjenblack also shows a superior electrocatalytic activity for oxygen reduction in 0.1 mol/L KOH aqueous solution. The improvement in catalytic activity results from the defects and activation sites introduced by boron doping.
基金Supported by the National Natural Science Foundation of China under Grant No 51472105the Key Program in Science and Technology of Jilin Province under Grant No 20150204062GX
文摘Chemically robust conductive p-type boron-doped diamond （BDD） films are an important electrode material and have been widely applied in electrochemistry. In this study, BDD films are taken as a two-dimensional （2D） electrode in a eleetrophoresis tank system instead of the conventional one-dimensional platinum wire electrode. The theoretical simulations by finite element numerical analysis reveal that the 2D BDD electrodes have relatively high intensity and uniformity of electric field in the tank. Experimentally, the 2D BDD electrodes with smaller size show excellent properties for the separation of DNA fragments. The advantages of the 2D BDD electrodes with chemical inertness, sustainability, high intensity and uniformity electronic field, as well as reduced small size of electrophoresis tank would open a possibility for realizing new generation, high-performance biological devices.
基金Funded by the National Natural Science Foundation of China (No.50972105)the Natural Science Foundation of Tianjin Province(No.10JCYBJC05900)
文摘Highly boron-doped diamond films were deposited on porous titanium substrates by hot filament chemical vapor deposition technique. The morphology variation of highly boron-doped diamond films grown on porous titanium substrates was investigated, and the effects of carbon concentration on nucleation density and diamond growth were also studied. The continuous change of surface morphology and structure of diamond film were characterized by scanning electron microscopy. The structures of diamond film and interlayer were analyzed by X-ray diffraction. The quality of boron-doped diamond film was confirmed by visible Raman spectroscopy. The experimental results reveal that surface morphology and quality of boron-doped diamond films are various due to the change of carbon concentration. The thickness of intermediate layer decreases with the carbon concentration increasing.
文摘Theoretical study on the supramolecular complexes formed between boron-doped het- erofullerene （C59B） and zinc porphine （ZnF）, namely C59B-ZnP and its anion species C59B-ZnP, was performed by density functional theory calculation at wB97XD/6-31G（d） level. Strong interaction between porphyrin and heterofullerene moiety was predicted for these complexes based on geometry and electronic structure analysis. Especially, pseudobonding interaction occurring between the B atom of fullerene and the N atom of porphyrin was predicted to occur in C59B-ZnP complex, but be broken in C59B-ZnP complex. Time-dependent density functional theory calculation manifests the redshift of electron absorption for ZnP upon the interaction with heterofullerene.
基金Project supported by the Key-Area Research and Development Program of Guangdong Province(Grant No.2020B0101690001)the National Natural Science Foundation of China(NSFC)(Grant No.51972135).
文摘Hill-like polycrystalline diamond grains(HPDGs)randomly emerged on a heavy boron-doped p+single-crystal diamond(SCD)film by prolonging the growth duration of the chemical vapor deposition process.The Raman spectral results confirm that a relatively higher boron concentration(~1.1×10^(21) cm^(-3))is detected on the HPDG with respect to the SCD region(~5.4×10^(20) cm^(-3)).It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination.The current-voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination,which means that the HPDGs provide a leakage path to form an ohmic contact.There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions.The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.
基金Project supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601)Basic Research Project of Henan province,China (Grant No 072300410140)
文摘Using diborane as doping gas, p-doped μc-Si：H layers are deposited by using the plasma enhanced chemical vapour deposition （PECVD） technology. The effects of deposition pressure and plasma power on the growth and the properties of μc-Si：H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped μc-Si：H films with a dark conductivity as high as 1.42 Ω^-1·cm^-1 and a crystallinity of above 50% are obtained. With this p-layer, μc-Si：H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped μc-Si：H layers is discussed.
基金Supported by the National Natural Science Foundation of China(Nos. 20435010, 20375012, 20205005 and 20475014).
文摘The direct detection of clenbuterol（CL） in pig liver without any extraction separation at a pyrrole-DNA modified boron-doped diamond（BDD） electrode is reported. The pyrrole-DNA modified BDD electrode has a strong electrocatalytic effect on the redox reaction of CL. One oxidization and two reduction peaks of CL appear at 340. 2, 299. 8 and 166. 6 mV（ versus SCE）, respectively. The pyrrole polymer alone cannot electrocatalyze the above reaction at a BDD electrode ; the electrocatalytic effect of a BDD electrode modified with DNA membrane is unsufficient for the analytical detection of CL; the replacement of boron-doped diamond by glass carbon makes the electrocatalytic reaction impossible ; the redox process is pH dependent. The influences of various experimental parameters on the pyrrole-DNA modified BDD electrode were investigated. A sensitive cyclic vohammetric response for CL was obtained in a linear range from 3.4 × 10^-6 to 5 × 10^ -4 mol/L with a detection limit of 8.5 × 10^-7 mol/L. A mean recovery of 102. 7% of CL in the pig liver sample solution and a reproducibility of 3.2% were obtained.
文摘Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO2 as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900℃ was studied with different doping concentrations and growth temperature. The broad photoluminescence band（from 0.75eV to 0.90eV） including D1 and D2 bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.
文摘In this paper, the adsorption and storage of hydrogen on calcium-decorated, boron-doped bilayer graphene was investigated using first principles calculation. The calcium-decorated bilayer graphene was investigated and it was shown that the binding energy of H2 molecule adsorbed on the calcium-decorated bilayer graphene is −0.02 eV and the energy does not belong to reversible usage range of −0.2 - −0.6 eV. Substitutional boron doping can improve the adsorption energy of Ca to bilayer graphene with the empty pz orbital of boron atoms. Our calculations show that calcium atoms can be solidly adsorbed on the interlayer (Ca/B/Graphene) and outerlayer (2Ca/B/Graphene and 3Ca/B/Graphene) of B-doped bilayer graphene. Hydrogen molecule binds with Ca/B/Graphene, 2Ca/B/Graphene and 3Ca/B/Graphene system with an energy that belongs to reversible usage range of −0.2 - −0.6 eV. The overlap between Ca 3d and H2σ orbitals just below the Fermi energy demonstrates the charge transfer between the Ca atom and the H atom and the role of hybridization of the 3d orbita of Ca with the σ orbitals of H2 in efficient adsorption of hydrogen molecules. The charge from hydrogen bonding orbital transfers to empty 3d orbitals of the Ca atom, and then from the 3d orbitals of the Ca atom donated to H2σ* antibonding orbital. Hydrogen moleculars can be adsorbed on the interlayer and outerlayer of Ca-decorated B-doped bilayer graphene.
文摘An electroanalytical method was developed for the direct quantitative determination of paracetamol in tablets based on its oxidation behavior. The electrochemical oxidation and determination of paracetamol were easily carried out on born-doped diamond (BDD) electrode using two voltammetric techniques (CV and DPV). The electrochemical measurements performed by cyclic voltammetric (CV) and differential pulse voltammetry (DPV) techniques were carried out using a cathodically pretreated boron-doped diamond electrode in HClO4 and KClO4 electrolytes. HClO4 was then selected for analytical purposes and scan rate studies were also completed. The oxidation of the paracetamol is found to be irreversible and a diffusion-controlled nature of the paracetamol oxidation peak was established. A linear calibration curve for DPV analysis was constructed in the paracetamol concentration range from 0 μM to 13.87 μM, with 0.16 μM and 0.55 μM as the detection and quantification limit respectively.
文摘A new electroanalytical procedure was developed for the determination of Benzophenone-3 (BENZO) in commercial sunscreen as the active ingredient. The procedure is based on the use of electrochemical methods as cyclic and square-wave voltammetry, with boron-doped diamond (BDD) electrodes. The reduction of BENZO in Britton-Robinson buffer (0.1 mol●L–1) using this type of electrode gives rise to one irreversible peak in –1.30 V (versus Ag/AgCl) in presence of cationic surfactant cetyltrimethylammonium bromide (CTABr). The proposed electrochemical method was successfully applied to the analysis of commercially available pharmaceutical preparations.
文摘The current efficiency for NF3 formation was independent on the current density in the range of 200 to 1,000 mA·cm^2. The average values of NF3 current efficiencies on the BDD （boron-doped diamond） anode with the boron-concentration of 2,500 ppm were 32.3% at 80℃, 63.3% at 100℃ and 59.7% at 120℃. The best current efficiencies for NF3 formation on the BDD anode with boron-concentrations of 2,500, 5,000 and 7,500 ppm were obtained at 100℃ and those were 63.3%, 73.3% and 56.2%, respectively. Although anode effect occurred on the BDD electrodes covered with a part of the surface of the spiculate structure, which had the boron-concentrations higher than 7,500 ppm, it did not take place on the BDD electrodes covered with the surface of diamond structure, even if the BDD electrode had the boron-concentration of 8,000 ppm.
