In this paper, co-doping method is used to improve the current efficiency of solution-processed organic light-emitting diodes(OLEDs). By changing the ratio of two thermally activated delayed fluorescent(TADF) emitters...In this paper, co-doping method is used to improve the current efficiency of solution-processed organic light-emitting diodes(OLEDs). By changing the ratio of two thermally activated delayed fluorescent(TADF) emitters, we studied the performance of device and its mechanism. A solution processed OLED with a structure of indium tin oxide(ITO, 150 nm)/PEDOT:PSS(30 nm)/CBP:4 Cz IPN-x%:4 Cz PN-y%(30 nm)/TPBi(40 nm)/Li F(1 nm)/Al(100 nm) was fabricated. The current efficiencies of 26.6 cd/A and 26.4 cd/A were achieved by the devices with dopant ratio of 6% 4 Cz IPN:2% 4 Cz PN and 2% 4 Cz IPN:6% 4 Cz PN in emitting material layer(EML), respectively. By investigating the tendency of current density change in devices with different doping ratio, we suggested that the enhancement of the current efficiency should be due to the charge transport balance improvement induced by assist dopant in EML.展开更多
基金supported by the National High Technology Research and Development Program of China (No.2012AA011901)the National Program on Key Basic Research Project of China (No.2012CB723406)+2 种基金the National Natural Science Foundation of China (No.51573036)the Fundamental Research Funds for the Central Universities of China (No.JD2016JGPY0007)the Industry-University-Research Cooperation Project of Aviation Industry Corporation of China (No.CXY2013HFGD20)。
文摘In this paper, co-doping method is used to improve the current efficiency of solution-processed organic light-emitting diodes(OLEDs). By changing the ratio of two thermally activated delayed fluorescent(TADF) emitters, we studied the performance of device and its mechanism. A solution processed OLED with a structure of indium tin oxide(ITO, 150 nm)/PEDOT:PSS(30 nm)/CBP:4 Cz IPN-x%:4 Cz PN-y%(30 nm)/TPBi(40 nm)/Li F(1 nm)/Al(100 nm) was fabricated. The current efficiencies of 26.6 cd/A and 26.4 cd/A were achieved by the devices with dopant ratio of 6% 4 Cz IPN:2% 4 Cz PN and 2% 4 Cz IPN:6% 4 Cz PN in emitting material layer(EML), respectively. By investigating the tendency of current density change in devices with different doping ratio, we suggested that the enhancement of the current efficiency should be due to the charge transport balance improvement induced by assist dopant in EML.
