Robots are widely used,providing significant convenience in daily life and production.With the rapid development of artificial intelligence and neuromorphic computing in recent years,the realization of more intelligen...Robots are widely used,providing significant convenience in daily life and production.With the rapid development of artificial intelligence and neuromorphic computing in recent years,the realization of more intelligent robots through a pro-found intersection of neuroscience and robotics has received much attention.Neuromorphic circuits based on memristors used to construct hardware neural networks have proved to be a promising solution of shattering traditional control limita-tions in the field of robot control,showcasing characteristics that enhance robot intelligence,speed,and energy efficiency.Start-ing with introducing the working mechanism of memristors and peripheral circuit design,this review gives a comprehensive analysis on the biomimetic information processing and biomimetic driving operations achieved through the utilization of neuro-morphic circuits in brain-like control.Four hardware neural network approaches,including digital-analog hybrid circuit design,novel device structure design,multi-regulation mechanism,and crossbar array,are summarized,which can well simulate the motor decision-making mechanism,multi-information integration and parallel control of brain at the hardware level.It will be definitely conductive to promote the application of memristor-based neuromorphic circuits in areas such as intelligent robotics,artificial intelligence,and neural computing.Finally,a conclusion and future prospects are discussed.展开更多
Multi-level programmable photonic integrated circuits(PICs)and optical metasurfaces have gained widespread attention in many fields,such as neuromorphic photonics,opticalcommunications,and quantum information.In this ...Multi-level programmable photonic integrated circuits(PICs)and optical metasurfaces have gained widespread attention in many fields,such as neuromorphic photonics,opticalcommunications,and quantum information.In this paper,we propose pixelated programmable Si_(3)N_(4)PICs with record-high 20-level intermediate states at 785 nm wavelength.Such flexibility in phase or amplitude modulation is achieved by a programmable Sb_(2)S_(3)matrix,the footprint of whose elements can be as small as 1.2μm,limited only by the optical diffraction limit of anin-house developed pulsed laser writing system.We believe our work lays the foundation for laser-writing ultra-high-level(20 levels and even more)programmable photonic systems and metasurfaces based on phase change materials,which could catalyze diverse applications such as programmable neuromorphic photonics,biosensing,optical computing,photonic quantum computing,and reconfigurable metasurfaces.展开更多
Quantum computers accelerate many algorithms based on the superposition principle of quantum mechanics.The Grover algorithm provides significant performance to malicious users attacking symmetric key systems.Since the...Quantum computers accelerate many algorithms based on the superposition principle of quantum mechanics.The Grover algorithm provides significant performance to malicious users attacking symmetric key systems.Since the performance of attacks using quantum computers depends on the efficiency of the quantum circuit of the encryption algorithms,research research on the implementation of quantum circuits is essential.This paper presents a new framework to construct quantum circuits of substitution boxes(S-boxes)using system modeling.We model the quantum circuits of S-boxes using two layers:Toffoli and linear layers.We generate vector spaces based on the values of qubits used in the linear layers and apply them to find quantum circuits.The framework finds the circuit bymatching elements of vector spaces generated fromthe input and output of a given S-box,using the forward search or themeet-in-the-middle strategy.We developed a tool to apply this framework to 4-bit S-boxes.While the 4-bit S-box quantum circuit construction tool LIGHTER-R only finds circuits that can be implemented with four qubits,the proposed tool achieves the circuits with five qubits.The proposed tool can find quantum circuits of 4-bit odd permutations based on the controlled NOT,NOT,and Toffoli gates,whereas LIGHTER-R is unable to perform this task in the same environment.We expect this technique to become a critical step toward optimizing S-box quantum circuits.展开更多
Loss of synapse and functional connectivity in brain circuits is associated with aging and neurodegeneration,however,few molecular mechanisms are known to intrinsically promote synaptogenesis or enhance synapse functi...Loss of synapse and functional connectivity in brain circuits is associated with aging and neurodegeneration,however,few molecular mechanisms are known to intrinsically promote synaptogenesis or enhance synapse function.We have previously shown that MET receptor tyrosine kinase in the developing cortical circuits promotes dendritic growth and dendritic spine morphogenesis.To investigate whether enhancing MET in adult cortex has synapse regenerating potential,we created a knockin mouse line,in which the human MET gene expression and signaling can be turned on in adult(10–12 months)cortical neurons through doxycycline-containing chow.We found that similar to the developing brain,turning on MET signaling in the adult cortex activates small GTPases and increases spine density in prefrontal projection neurons.These findings are further corroborated by increased synaptic activity and transient generation of immature silent synapses.Prolonged MET signaling resulted in an increasedα-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid/N-methyl-Daspartate(AMPA/NMDA)receptor current ratio,indicative of enhanced synaptic function and connectivity.Our data reveal that enhancing MET signaling could be an interventional approach to promote synaptogenesis and preserve functional connectivity in the adult brain.These findings may have implications for regenerative therapy in aging and neurodegeneration conditions.展开更多
The objective in this presentation is to introduce some of the unique properties and applications of nullors in active circuit analysis and designs. The emphasis is to discuss the role nullors can play in symbolic rep...The objective in this presentation is to introduce some of the unique properties and applications of nullors in active circuit analysis and designs. The emphasis is to discuss the role nullors can play in symbolic representation of transfer functions. To show this we adopt the topological platform for the circuit analysis and use a recently developed Admittance Method (AM) to achieve the Sum of Tree Products (STP), replacing the determinant and cofactors of the Nodal Admittance Matrix (NAM) of the circuit. To construct a transfer function, we start with a given active circuit and convert all its controlled sources and I/O-ports to nullors. Now, with a solid nullor circuit (passive elements and nullors) we first eliminate the passive elements through AM operations. This produces the STPs. Second, the all-nullor circuit is then used to find the signs or the STPs. Finally, the transfer function (in symbolic, if chosen) is obtained from the ratio between the STPs.展开更多
As the manufacturing process of silicon-based integrated circuits(ICs)approaches its physical limit,the quantum effect of silicon-based field-effect transistors(FETs)has become increasingly evident.And the burgeoning ...As the manufacturing process of silicon-based integrated circuits(ICs)approaches its physical limit,the quantum effect of silicon-based field-effect transistors(FETs)has become increasingly evident.And the burgeoning carbon-based semiconductor technology has become one of the most disruptive technologies in the post-Moore era.As one-dimensional nanomaterials,carbon nanotubes(CNTs)are far superior to silicon at the same technology nodes of FETs because of their excellent electrical transport and scaling properties,rendering them the most competitive material in the next-generation ICs technology.However,certain challenges impede the industrialization of CNTs,particularly in terms of material preparation,which significantly hinders the development of CNT-based ICs.Focusing on CNT-based ICs technology,this review summarizes its main technical status,development trends,existing challenges,and future development directions.展开更多
Reducing the control error is vital for high-fidelity digital and analog quantum operations.In superconducting circuits,one disagreeable error arises from the reflection of microwave signals due to impedance mismatch ...Reducing the control error is vital for high-fidelity digital and analog quantum operations.In superconducting circuits,one disagreeable error arises from the reflection of microwave signals due to impedance mismatch in the control chain.Here,we demonstrate a reflection cancelation method when considering that there are two reflection nodes on the control line.We propose to generate the pre-distortion pulse by passing the envelopes of the microwave signal through digital filters,which enables real-time reflection correction when integrated into the field-programmable gate array(FPGA).We achieve a reduction of single-qubit gate infidelity from 0.67%to 0.11%after eliminating microwave reflection.Real-time correction of microwave reflection paves the way for precise control and manipulation of the qubit state and would ultimately enhance the performance of algorithms and simulations executed on quantum processors.展开更多
In this paper,the electromagnetic performance of variable flux memory(VFM)machines with series-magnetic-circuit is investigated and compared for different rotor topologies.Based on a V-type VFM machine,five topologies...In this paper,the electromagnetic performance of variable flux memory(VFM)machines with series-magnetic-circuit is investigated and compared for different rotor topologies.Based on a V-type VFM machine,five topologies with different interior permanent magnet(IPM)arrangements are evolved and optimized under same constrains.Based on two-dimensional(2-D)finite element(FE)method,their electromagnetic performance at magnetization and demagnetization states is evaluated.It reveals that the iron bridge and rotor lamination region between constant PM(CPM)and variable PM(VPM)play an important role in torque density and flux regulation(FR)capabilities.Besides,the global efficiency can be improved in VFM machines by adjusting magnetization state(MS)under different operating conditions.展开更多
In recent years,scientists have become increasingly concerned in recycling electronic trash,particularly waste printed circuit boards(WPCBs).Previous research has indicated that the presence of Cu impacts the pyrolysi...In recent years,scientists have become increasingly concerned in recycling electronic trash,particularly waste printed circuit boards(WPCBs).Previous research has indicated that the presence of Cu impacts the pyrolysis of WPCBs.However,there may be errors in the experimental results,as printed circuit boards(PCBs)with copper and those without copper are produced differently.For this experiment,we blended copper powder with PCB nonmetallic resin powder in various ratios to create the samples.The apparent kinetics and pyrolysis properties of four resin powders with varying copper concentrations were compared using nonisothermal thermogravimetric analysis(TG)and thermal pyrolysis-gas chromatography mass spectrometry(Py-GC/MS).From the perspective of kinetics,the apparent activation energy of the resin powder in the pyrolysis reaction shows a rise(0.1<a<0.2)-stable(0.2<a<0.4)-accelerated increase(0.4<a<0.8)-decrease(0.8<a<0.9)process.After adding copper powder,the apparent activation energy changes more obviously when(0.2<a<0.4).In the early stage of the pyrolysis reaction(0.1<a<0.6),the apparent activation energy is reduced,but when a?0.8,it is much higher than that of the resin sample without copper.Additionally,it is discovered using thermogravimetric analysis and Py-GC/MS that copper shortens the temperature range of the primary pyrolysis reaction and prevents the creation of compounds containing bromine.This inhibition will raise the temperature at which compounds containing bromine first form,and it will keep rising as the copper level rises.The majority of the circuit board molecules have lower bond energies when copper is present,according to calculations performed using the Gaussian09 software,which promotes the pyrolysis reaction.展开更多
The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with ...The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.展开更多
During faults in a distribution network,the output power of a distributed generation(DG)may be uncertain.Moreover,the output currents of distributed power sources are also affected by the output power,resulting in unc...During faults in a distribution network,the output power of a distributed generation(DG)may be uncertain.Moreover,the output currents of distributed power sources are also affected by the output power,resulting in uncertainties in the calculation of the short-circuit current at the time of a fault.Additionally,the impacts of such uncertainties around short-circuit currents will increase with the increase of distributed power sources.Thus,it is very important to develop a method for calculating the short-circuit current while considering the uncertainties in a distribution network.In this study,an affine arithmetic algorithm for calculating short-circuit current intervals in distribution networks with distributed power sources while considering power fluctuations is presented.The proposed algorithm includes two stages.In the first stage,normal operations are considered to establish a conservative interval affine optimization model of injection currents in distributed power sources.Constrained by the fluctuation range of distributed generation power at the moment of fault occurrence,the model can then be used to solve for the fluctuation range of injected current amplitudes in distributed power sources.The second stage is implemented after a malfunction occurs.In this stage,an affine optimization model is first established.This model is developed to characterizes the short-circuit current interval of a transmission line,and is constrained by the fluctuation range of the injected current amplitude of DG during normal operations.Finally,the range of the short-circuit current amplitudes of distribution network lines after a short-circuit fault occurs is predicted.The algorithm proposed in this article obtains an interval range containing accurate results through interval operation.Compared with traditional point value calculation methods,interval calculation methods can provide more reliable analysis and calculation results.The range of short-circuit current amplitude obtained by this algorithm is slightly larger than those obtained using the Monte Carlo algorithm and the Latin hypercube sampling algorithm.Therefore,the proposed algorithm has good suitability and does not require iterative calculations,resulting in a significant improvement in computational speed compared to the Monte Carlo algorithm and the Latin hypercube sampling algorithm.Furthermore,the proposed algorithm can provide more reliable analysis and calculation results,improving the safety and stability of power systems.展开更多
When the contacts of a medium-voltage DC air circuit breaker(DCCB) are separated, the energy distribution of the arc is determined by the formation process of the near-electrode sheath. Therefore, the voltage drop thr...When the contacts of a medium-voltage DC air circuit breaker(DCCB) are separated, the energy distribution of the arc is determined by the formation process of the near-electrode sheath. Therefore, the voltage drop through the near-electrode sheath is an important means to build up the arc voltage, which directly determines the current-limiting performance of the DCCB. A numerical model to describe the near-electrode sheath formation process can provide insight into the physical mechanism of the arc formation, and thus provide a method for arc energy regulation. In this work, we establish a two-dimensional axisymmetric time-varying model of a medium-voltage DCCB arc when interrupted by high current based on a fluid-chemical model involving 16 kinds of species and 46 collision reactions. The transient distributions of electron number density, positive and negative ion number density, net space charge density, axial electric field, axial potential between electrodes, and near-cathode sheath are obtained from the numerical model. The computational results show that the electron density in the arc column increases, then decreases, and then stabilizes during the near-cathode sheath formation process, and the arc column's diameter gradually becomes wider. The 11.14 V–12.33 V drops along the17 μm space charge layer away from the cathode(65.5 k V/m–72.5 k V/m) when the current varies from 20 k A–80 k A.The homogeneous external magnetic field has little effect on the distribution of particles in the near-cathode sheath core,but the electron number density at the near-cathode sheath periphery can increase as the magnetic field increases and the homogeneous external magnetic field will lead to arc diffusion. The validity of the numerical model can be proven by comparison with the experiment.展开更多
The paper considers the response to the accumulated energy in the resistor (R)-capacitor (C) circuit. In the (RC) circuit, the capacitor C is initially charged with the “capacitive” voltage U0. At that moment t=0, t...The paper considers the response to the accumulated energy in the resistor (R)-capacitor (C) circuit. In the (RC) circuit, the capacitor C is initially charged with the “capacitive” voltage U0. At that moment t=0, the P circuit switch turns on. By using Kirchhoff’s laws on the elements, a homogeneous differential equation of the first order with constant coefficients is obtained with the initial condition UC(0)=U0. The solution of the differential equation is presented in exponential form UC(t)=U0⋅e−t/τ. Qualitative analysis RC of the circuit gives a phase portrait on the line. From the phase portrait on the line, it can be seen that the charge UC(t)→UC∗=0when t→∞stabilizes, regardless of the initial conditions. It is shown that from UC(t)=U0⋅e−t/τa dynamic system defined by the function φ(t,UC)=UC⋅e−t/τcan be formed from. It has also been shown that, from the formed dynamic system, an autonomous system (circuit equation RC) can be found whose solution describes the formed dynamic system. It is also shown that the dynamic system φ(t,UC)=UC⋅e−t/τhas one attractive fixed point UC=0.展开更多
October 25-27(Fri-Sun),2024 Hangzhou杭州,Hangzhou,China Call for Papers The 7th IEEE International Conference on Integrated Circuits,Technologies and Applications(ICTA 2024),will be held on October 25-27,2024 in Hangz...October 25-27(Fri-Sun),2024 Hangzhou杭州,Hangzhou,China Call for Papers The 7th IEEE International Conference on Integrated Circuits,Technologies and Applications(ICTA 2024),will be held on October 25-27,2024 in Hangzhou,China.This conference will be held in China to provide an international forum according to IEEE standard for the presentation and exchange of the latest technical achievements and cross-discipline fertilization of IC designs,technologies,and applications in our fast-changing society.This year's theme is“Chiplet and Future IDM”.展开更多
With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of Si...With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of SiC MOSFET,the change rate of voltage and current in the turn-on and turn-off process increases with the increase of switching frequency.Also,the current and voltage spike oscillation phenomenon is gradually intensified due to the influence of circuit stray parameters.Based on the analysis of SiC MOSFET characteristics,the paper discusses the design requirements and design principles of SiC MOSFET drive circuit.Then,taking the SiC module C2M0080120D of Cree Company as an example,a driver circuit design is realized through the ACPL-355JC optocoupler driver module of Broadcom Company.The circuit not only has the characteristics of fast transmission delay and excellent performance,but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software,and the switching characteristics of SiC MOSFET under different working conditions are studied in depth.The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation,which lays a foundation for the practical application of SiC MOSFET in the future.展开更多
This study investigates the breakdown voltage characteristics in sulfur hexafluoride(SF6)circuit breakers,employing a novel approach that integrates both experimental investigations and finite element simulations.Util...This study investigates the breakdown voltage characteristics in sulfur hexafluoride(SF6)circuit breakers,employing a novel approach that integrates both experimental investigations and finite element simulations.Utilizing a sphere-sphere electrode configuration,we meticulously measured the relationship between breakdown voltage and electrode gap distances ranging from 1 cm to 4.5 cm.Subsequent simulations,conducted using COMSOL Multiphysics,mirrored the experimental setup to validate the model’s accuracy through a comparison of the breakdown voltage-electrode gap distance curves.The simulation results not only aligned closely with the experimental data but also allowed the extraction of detailed electric field strength,electric potential contours,and electric current flow curves at the breakdown voltage for gap distances extending from 1 to 4.5 cm.Extending the analysis,the study explored the electric field and potential distribution at a constant voltage of 72.5 kV for gap distances between 1 to 10 cm,identifying the maximum electric field strength.A comprehensive comparison of five different electrode configurations(sphere-sphere,sphere-rod,sphere-plane,rod-plane,rod-rod)at 72.5 kV and a gap distance of 1.84 cm underscored the significant influence of electrode geometry on the breakdown process.Moreover,the research contrasts the breakdown voltage in SF6 with that in air,emphasizing SF6’s superior insulating properties.This investigation not only elucidates the intricate dynamics of electrical breakdown in SF6 circuit breakers but also contributes valuable insights into the optimal electrode configurations and the potential for alternative insulating gases,steering future advancements in high-voltage circuit breaker technology.展开更多
Cold-junction compensation(CJC)and disconnection detection circuit design of various thermocouples(TC)and multi-channel TC interface circuits were designed.The CJC and disconnection detection circuit consists of a CJC...Cold-junction compensation(CJC)and disconnection detection circuit design of various thermocouples(TC)and multi-channel TC interface circuits were designed.The CJC and disconnection detection circuit consists of a CJC semiconductor device,an instrumentation amplifier(IA),two resistors,and a diode for disconnection detection.Based on the basic circuit,a multi-channel interface circuit was also implemented.The CJC was implemented using compensation semiconductor and IA,and disconnection detection was detected by using two resistors and a diode so that IA input voltage became-0.42 V.As a result of the experiment using R-type TC,the error of the designed circuit was reduced from 0.14 mV to 3μV after CJC in the temperature range of 0°C to 1400°C.In addition,it was confirmed that the output voltage of IA was saturated from 88 mV to-14.2 V when TC was disconnected from normal.The output voltage of the designed circuit was 0 V to 10 V in the temperature range of 0°C to 1400°C.The results of the 4-channel interface experiment using R-type TC were almost identical to the CJC and disconnection detection results for each channel.The implemented multi-channel interface has a feature that can be applied equally to E,J,K,T,R,and S-type TCs by changing the terminals of CJC semiconductor devices and adjusting the IA gain.展开更多
文摘Robots are widely used,providing significant convenience in daily life and production.With the rapid development of artificial intelligence and neuromorphic computing in recent years,the realization of more intelligent robots through a pro-found intersection of neuroscience and robotics has received much attention.Neuromorphic circuits based on memristors used to construct hardware neural networks have proved to be a promising solution of shattering traditional control limita-tions in the field of robot control,showcasing characteristics that enhance robot intelligence,speed,and energy efficiency.Start-ing with introducing the working mechanism of memristors and peripheral circuit design,this review gives a comprehensive analysis on the biomimetic information processing and biomimetic driving operations achieved through the utilization of neuro-morphic circuits in brain-like control.Four hardware neural network approaches,including digital-analog hybrid circuit design,novel device structure design,multi-regulation mechanism,and crossbar array,are summarized,which can well simulate the motor decision-making mechanism,multi-information integration and parallel control of brain at the hardware level.It will be definitely conductive to promote the application of memristor-based neuromorphic circuits in areas such as intelligent robotics,artificial intelligence,and neural computing.Finally,a conclusion and future prospects are discussed.
基金funded by the National Nature Science Foundation of China(Grant Nos.52175509 and 52130504)National Key Research and Development Program of China(2017YFF0204705)2021 Postdoctoral Innovation Research Plan of Hubei Province(0106100226)。
文摘Multi-level programmable photonic integrated circuits(PICs)and optical metasurfaces have gained widespread attention in many fields,such as neuromorphic photonics,opticalcommunications,and quantum information.In this paper,we propose pixelated programmable Si_(3)N_(4)PICs with record-high 20-level intermediate states at 785 nm wavelength.Such flexibility in phase or amplitude modulation is achieved by a programmable Sb_(2)S_(3)matrix,the footprint of whose elements can be as small as 1.2μm,limited only by the optical diffraction limit of anin-house developed pulsed laser writing system.We believe our work lays the foundation for laser-writing ultra-high-level(20 levels and even more)programmable photonic systems and metasurfaces based on phase change materials,which could catalyze diverse applications such as programmable neuromorphic photonics,biosensing,optical computing,photonic quantum computing,and reconfigurable metasurfaces.
基金supported by the MSIT(Ministry of Science and ICT),Republic of Korea,under the ITRC(Information Technology Research Center)support program(IITP-2024-RS-2022-00164800)supervised by the IITP(Institute for Information&Communications Technology Planning&Evaluation).
文摘Quantum computers accelerate many algorithms based on the superposition principle of quantum mechanics.The Grover algorithm provides significant performance to malicious users attacking symmetric key systems.Since the performance of attacks using quantum computers depends on the efficiency of the quantum circuit of the encryption algorithms,research research on the implementation of quantum circuits is essential.This paper presents a new framework to construct quantum circuits of substitution boxes(S-boxes)using system modeling.We model the quantum circuits of S-boxes using two layers:Toffoli and linear layers.We generate vector spaces based on the values of qubits used in the linear layers and apply them to find quantum circuits.The framework finds the circuit bymatching elements of vector spaces generated fromthe input and output of a given S-box,using the forward search or themeet-in-the-middle strategy.We developed a tool to apply this framework to 4-bit S-boxes.While the 4-bit S-box quantum circuit construction tool LIGHTER-R only finds circuits that can be implemented with four qubits,the proposed tool achieves the circuits with five qubits.The proposed tool can find quantum circuits of 4-bit odd permutations based on the controlled NOT,NOT,and Toffoli gates,whereas LIGHTER-R is unable to perform this task in the same environment.We expect this technique to become a critical step toward optimizing S-box quantum circuits.
基金supported by NIH/NIMH grant R01MH111619(to SQ),R21AG078700(to SQ)Institute of Mental Health Research(IMHR,Level 1 funding,to SQ and DF)institution startup fund from The University of Arizona(to SQ)。
文摘Loss of synapse and functional connectivity in brain circuits is associated with aging and neurodegeneration,however,few molecular mechanisms are known to intrinsically promote synaptogenesis or enhance synapse function.We have previously shown that MET receptor tyrosine kinase in the developing cortical circuits promotes dendritic growth and dendritic spine morphogenesis.To investigate whether enhancing MET in adult cortex has synapse regenerating potential,we created a knockin mouse line,in which the human MET gene expression and signaling can be turned on in adult(10–12 months)cortical neurons through doxycycline-containing chow.We found that similar to the developing brain,turning on MET signaling in the adult cortex activates small GTPases and increases spine density in prefrontal projection neurons.These findings are further corroborated by increased synaptic activity and transient generation of immature silent synapses.Prolonged MET signaling resulted in an increasedα-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid/N-methyl-Daspartate(AMPA/NMDA)receptor current ratio,indicative of enhanced synaptic function and connectivity.Our data reveal that enhancing MET signaling could be an interventional approach to promote synaptogenesis and preserve functional connectivity in the adult brain.These findings may have implications for regenerative therapy in aging and neurodegeneration conditions.
文摘The objective in this presentation is to introduce some of the unique properties and applications of nullors in active circuit analysis and designs. The emphasis is to discuss the role nullors can play in symbolic representation of transfer functions. To show this we adopt the topological platform for the circuit analysis and use a recently developed Admittance Method (AM) to achieve the Sum of Tree Products (STP), replacing the determinant and cofactors of the Nodal Admittance Matrix (NAM) of the circuit. To construct a transfer function, we start with a given active circuit and convert all its controlled sources and I/O-ports to nullors. Now, with a solid nullor circuit (passive elements and nullors) we first eliminate the passive elements through AM operations. This produces the STPs. Second, the all-nullor circuit is then used to find the signs or the STPs. Finally, the transfer function (in symbolic, if chosen) is obtained from the ratio between the STPs.
基金supported by National Natural Science Foundation of China(Grant No.52022078)Shaanxi Provincial Key Research and Development Program(Grant No.2021ZDLGY10-02,2019ZDLGY01-09)。
文摘As the manufacturing process of silicon-based integrated circuits(ICs)approaches its physical limit,the quantum effect of silicon-based field-effect transistors(FETs)has become increasingly evident.And the burgeoning carbon-based semiconductor technology has become one of the most disruptive technologies in the post-Moore era.As one-dimensional nanomaterials,carbon nanotubes(CNTs)are far superior to silicon at the same technology nodes of FETs because of their excellent electrical transport and scaling properties,rendering them the most competitive material in the next-generation ICs technology.However,certain challenges impede the industrialization of CNTs,particularly in terms of material preparation,which significantly hinders the development of CNT-based ICs.Focusing on CNT-based ICs technology,this review summarizes its main technical status,development trends,existing challenges,and future development directions.
基金the National Natural Science Foun-dation of China(Grant Nos.12034018 and 11625419).
文摘Reducing the control error is vital for high-fidelity digital and analog quantum operations.In superconducting circuits,one disagreeable error arises from the reflection of microwave signals due to impedance mismatch in the control chain.Here,we demonstrate a reflection cancelation method when considering that there are two reflection nodes on the control line.We propose to generate the pre-distortion pulse by passing the envelopes of the microwave signal through digital filters,which enables real-time reflection correction when integrated into the field-programmable gate array(FPGA).We achieve a reduction of single-qubit gate infidelity from 0.67%to 0.11%after eliminating microwave reflection.Real-time correction of microwave reflection paves the way for precise control and manipulation of the qubit state and would ultimately enhance the performance of algorithms and simulations executed on quantum processors.
基金supported by the CRRC Zhuzhou Institute Company Ltd.and in part by Key R&D projects in Hunan+1 种基金ChinaNo.2022GK2062。
文摘In this paper,the electromagnetic performance of variable flux memory(VFM)machines with series-magnetic-circuit is investigated and compared for different rotor topologies.Based on a V-type VFM machine,five topologies with different interior permanent magnet(IPM)arrangements are evolved and optimized under same constrains.Based on two-dimensional(2-D)finite element(FE)method,their electromagnetic performance at magnetization and demagnetization states is evaluated.It reveals that the iron bridge and rotor lamination region between constant PM(CPM)and variable PM(VPM)play an important role in torque density and flux regulation(FR)capabilities.Besides,the global efficiency can be improved in VFM machines by adjusting magnetization state(MS)under different operating conditions.
基金supported by the National Key Research and Development Program of China(2018YFC1902504).
文摘In recent years,scientists have become increasingly concerned in recycling electronic trash,particularly waste printed circuit boards(WPCBs).Previous research has indicated that the presence of Cu impacts the pyrolysis of WPCBs.However,there may be errors in the experimental results,as printed circuit boards(PCBs)with copper and those without copper are produced differently.For this experiment,we blended copper powder with PCB nonmetallic resin powder in various ratios to create the samples.The apparent kinetics and pyrolysis properties of four resin powders with varying copper concentrations were compared using nonisothermal thermogravimetric analysis(TG)and thermal pyrolysis-gas chromatography mass spectrometry(Py-GC/MS).From the perspective of kinetics,the apparent activation energy of the resin powder in the pyrolysis reaction shows a rise(0.1<a<0.2)-stable(0.2<a<0.4)-accelerated increase(0.4<a<0.8)-decrease(0.8<a<0.9)process.After adding copper powder,the apparent activation energy changes more obviously when(0.2<a<0.4).In the early stage of the pyrolysis reaction(0.1<a<0.6),the apparent activation energy is reduced,but when a?0.8,it is much higher than that of the resin sample without copper.Additionally,it is discovered using thermogravimetric analysis and Py-GC/MS that copper shortens the temperature range of the primary pyrolysis reaction and prevents the creation of compounds containing bromine.This inhibition will raise the temperature at which compounds containing bromine first form,and it will keep rising as the copper level rises.The majority of the circuit board molecules have lower bond energies when copper is present,according to calculations performed using the Gaussian09 software,which promotes the pyrolysis reaction.
基金National Natural Science Foundation of China(61974116)。
文摘The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.
基金This article was supported by the general project“Research on Wind and Photovoltaic Fault Characteristics and Practical Short Circuit Calculation Model”(521820200097)of Jiangxi Electric Power Company.
文摘During faults in a distribution network,the output power of a distributed generation(DG)may be uncertain.Moreover,the output currents of distributed power sources are also affected by the output power,resulting in uncertainties in the calculation of the short-circuit current at the time of a fault.Additionally,the impacts of such uncertainties around short-circuit currents will increase with the increase of distributed power sources.Thus,it is very important to develop a method for calculating the short-circuit current while considering the uncertainties in a distribution network.In this study,an affine arithmetic algorithm for calculating short-circuit current intervals in distribution networks with distributed power sources while considering power fluctuations is presented.The proposed algorithm includes two stages.In the first stage,normal operations are considered to establish a conservative interval affine optimization model of injection currents in distributed power sources.Constrained by the fluctuation range of distributed generation power at the moment of fault occurrence,the model can then be used to solve for the fluctuation range of injected current amplitudes in distributed power sources.The second stage is implemented after a malfunction occurs.In this stage,an affine optimization model is first established.This model is developed to characterizes the short-circuit current interval of a transmission line,and is constrained by the fluctuation range of the injected current amplitude of DG during normal operations.Finally,the range of the short-circuit current amplitudes of distribution network lines after a short-circuit fault occurs is predicted.The algorithm proposed in this article obtains an interval range containing accurate results through interval operation.Compared with traditional point value calculation methods,interval calculation methods can provide more reliable analysis and calculation results.The range of short-circuit current amplitude obtained by this algorithm is slightly larger than those obtained using the Monte Carlo algorithm and the Latin hypercube sampling algorithm.Therefore,the proposed algorithm has good suitability and does not require iterative calculations,resulting in a significant improvement in computational speed compared to the Monte Carlo algorithm and the Latin hypercube sampling algorithm.Furthermore,the proposed algorithm can provide more reliable analysis and calculation results,improving the safety and stability of power systems.
基金Project supported by the National Natural Science Foundation of China (Grant No.51977132)Key Special Science and Technology Project of Liaoning Province (Grant No.2020JH1/10100012)General Program of the Education Department of Liaoning Province (Grant No.LJKZ0126)。
文摘When the contacts of a medium-voltage DC air circuit breaker(DCCB) are separated, the energy distribution of the arc is determined by the formation process of the near-electrode sheath. Therefore, the voltage drop through the near-electrode sheath is an important means to build up the arc voltage, which directly determines the current-limiting performance of the DCCB. A numerical model to describe the near-electrode sheath formation process can provide insight into the physical mechanism of the arc formation, and thus provide a method for arc energy regulation. In this work, we establish a two-dimensional axisymmetric time-varying model of a medium-voltage DCCB arc when interrupted by high current based on a fluid-chemical model involving 16 kinds of species and 46 collision reactions. The transient distributions of electron number density, positive and negative ion number density, net space charge density, axial electric field, axial potential between electrodes, and near-cathode sheath are obtained from the numerical model. The computational results show that the electron density in the arc column increases, then decreases, and then stabilizes during the near-cathode sheath formation process, and the arc column's diameter gradually becomes wider. The 11.14 V–12.33 V drops along the17 μm space charge layer away from the cathode(65.5 k V/m–72.5 k V/m) when the current varies from 20 k A–80 k A.The homogeneous external magnetic field has little effect on the distribution of particles in the near-cathode sheath core,but the electron number density at the near-cathode sheath periphery can increase as the magnetic field increases and the homogeneous external magnetic field will lead to arc diffusion. The validity of the numerical model can be proven by comparison with the experiment.
文摘The paper considers the response to the accumulated energy in the resistor (R)-capacitor (C) circuit. In the (RC) circuit, the capacitor C is initially charged with the “capacitive” voltage U0. At that moment t=0, the P circuit switch turns on. By using Kirchhoff’s laws on the elements, a homogeneous differential equation of the first order with constant coefficients is obtained with the initial condition UC(0)=U0. The solution of the differential equation is presented in exponential form UC(t)=U0⋅e−t/τ. Qualitative analysis RC of the circuit gives a phase portrait on the line. From the phase portrait on the line, it can be seen that the charge UC(t)→UC∗=0when t→∞stabilizes, regardless of the initial conditions. It is shown that from UC(t)=U0⋅e−t/τa dynamic system defined by the function φ(t,UC)=UC⋅e−t/τcan be formed from. It has also been shown that, from the formed dynamic system, an autonomous system (circuit equation RC) can be found whose solution describes the formed dynamic system. It is also shown that the dynamic system φ(t,UC)=UC⋅e−t/τhas one attractive fixed point UC=0.
文摘October 25-27(Fri-Sun),2024 Hangzhou杭州,Hangzhou,China Call for Papers The 7th IEEE International Conference on Integrated Circuits,Technologies and Applications(ICTA 2024),will be held on October 25-27,2024 in Hangzhou,China.This conference will be held in China to provide an international forum according to IEEE standard for the presentation and exchange of the latest technical achievements and cross-discipline fertilization of IC designs,technologies,and applications in our fast-changing society.This year's theme is“Chiplet and Future IDM”.
基金the phased achievements of the postgraduate practice innovation project(SJCX22_1479)in Jiangsu Province.
文摘With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of SiC MOSFET,the change rate of voltage and current in the turn-on and turn-off process increases with the increase of switching frequency.Also,the current and voltage spike oscillation phenomenon is gradually intensified due to the influence of circuit stray parameters.Based on the analysis of SiC MOSFET characteristics,the paper discusses the design requirements and design principles of SiC MOSFET drive circuit.Then,taking the SiC module C2M0080120D of Cree Company as an example,a driver circuit design is realized through the ACPL-355JC optocoupler driver module of Broadcom Company.The circuit not only has the characteristics of fast transmission delay and excellent performance,but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software,and the switching characteristics of SiC MOSFET under different working conditions are studied in depth.The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation,which lays a foundation for the practical application of SiC MOSFET in the future.
基金Ningbo Science and Technology Plan Project(Grant No.2023Z043)。
文摘This study investigates the breakdown voltage characteristics in sulfur hexafluoride(SF6)circuit breakers,employing a novel approach that integrates both experimental investigations and finite element simulations.Utilizing a sphere-sphere electrode configuration,we meticulously measured the relationship between breakdown voltage and electrode gap distances ranging from 1 cm to 4.5 cm.Subsequent simulations,conducted using COMSOL Multiphysics,mirrored the experimental setup to validate the model’s accuracy through a comparison of the breakdown voltage-electrode gap distance curves.The simulation results not only aligned closely with the experimental data but also allowed the extraction of detailed electric field strength,electric potential contours,and electric current flow curves at the breakdown voltage for gap distances extending from 1 to 4.5 cm.Extending the analysis,the study explored the electric field and potential distribution at a constant voltage of 72.5 kV for gap distances between 1 to 10 cm,identifying the maximum electric field strength.A comprehensive comparison of five different electrode configurations(sphere-sphere,sphere-rod,sphere-plane,rod-plane,rod-rod)at 72.5 kV and a gap distance of 1.84 cm underscored the significant influence of electrode geometry on the breakdown process.Moreover,the research contrasts the breakdown voltage in SF6 with that in air,emphasizing SF6’s superior insulating properties.This investigation not only elucidates the intricate dynamics of electrical breakdown in SF6 circuit breakers but also contributes valuable insights into the optimal electrode configurations and the potential for alternative insulating gases,steering future advancements in high-voltage circuit breaker technology.
文摘Cold-junction compensation(CJC)and disconnection detection circuit design of various thermocouples(TC)and multi-channel TC interface circuits were designed.The CJC and disconnection detection circuit consists of a CJC semiconductor device,an instrumentation amplifier(IA),two resistors,and a diode for disconnection detection.Based on the basic circuit,a multi-channel interface circuit was also implemented.The CJC was implemented using compensation semiconductor and IA,and disconnection detection was detected by using two resistors and a diode so that IA input voltage became-0.42 V.As a result of the experiment using R-type TC,the error of the designed circuit was reduced from 0.14 mV to 3μV after CJC in the temperature range of 0°C to 1400°C.In addition,it was confirmed that the output voltage of IA was saturated from 88 mV to-14.2 V when TC was disconnected from normal.The output voltage of the designed circuit was 0 V to 10 V in the temperature range of 0°C to 1400°C.The results of the 4-channel interface experiment using R-type TC were almost identical to the CJC and disconnection detection results for each channel.The implemented multi-channel interface has a feature that can be applied equally to E,J,K,T,R,and S-type TCs by changing the terminals of CJC semiconductor devices and adjusting the IA gain.
