The microstructure and optical properties of a buried layer formed by O<sup>+</sup>(200keV,1.8×10<sup>18</sup>/cm<sup>2</sup>)and N<sup>+</sup>(180 keV,4×10<...The microstructure and optical properties of a buried layer formed by O<sup>+</sup>(200keV,1.8×10<sup>18</sup>/cm<sup>2</sup>)and N<sup>+</sup>(180 keV,4×10<sup>17</sup>/cm<sup>2</sup>)co-implantation and annealed at 1200℃for 2 h have been investigated by Auger electron,IR absorption and reflection spectroscopicmeasurements.The results show that the buried layer consists of silicon dioxide and SiO<sub>x</sub>（x【 2）and the nitrogen segregates to the wings of the buried layer where it forms an oxynitride.Bydetail theoretical analysis and computer simulation of the IR reflection interference spectrum,therefractive index profiles of the buried layer were obtained.展开更多
In this paper, a method to fabricate Silicon-on-Nothing （SON） MOSFETs using H^＋ and He^＋ co-implantation is presented. The technique is compatible with conventional CMOS technology and its feasibility has been exp...In this paper, a method to fabricate Silicon-on-Nothing （SON） MOSFETs using H^＋ and He^＋ co-implantation is presented. The technique is compatible with conventional CMOS technology and its feasibility has been experimentally demonstrated. SON MOSFETs with 50nm gate length have been fabricated. Compared with the corresponding bulk MOSFETs, the SON MOSFETs show higher on current, reduced leakage current and lower subthreshold slope.展开更多
In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Scho...In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge termination.The resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.展开更多
H_5 photonic crystal（PC） microcavities co-implanted with erbium（Er） and oxygen（O） ions were fabricated on silicon-on-insulator（SOI） wafers.Photoluminescence（PL） measurements were taken at room temperature an...H_5 photonic crystal（PC） microcavities co-implanted with erbium（Er） and oxygen（O） ions were fabricated on silicon-on-insulator（SOI） wafers.Photoluminescence（PL） measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identically implanted unpatterned SOI wafer.In addition,we also explored the adjustment of cavity modes by changing the structural parameters of the PC,and the measured results showed that the cavity-resonant peaks shifted towards shorter wavelengths as the radius of the air holes increased,which is consistent with the theoretical simulation.展开更多
文摘The microstructure and optical properties of a buried layer formed by O<sup>+</sup>(200keV,1.8×10<sup>18</sup>/cm<sup>2</sup>)and N<sup>+</sup>(180 keV,4×10<sup>17</sup>/cm<sup>2</sup>)co-implantation and annealed at 1200℃for 2 h have been investigated by Auger electron,IR absorption and reflection spectroscopicmeasurements.The results show that the buried layer consists of silicon dioxide and SiO<sub>x</sub>（x【 2）and the nitrogen segregates to the wings of the buried layer where it forms an oxynitride.Bydetail theoretical analysis and computer simulation of the IR reflection interference spectrum,therefractive index profiles of the buried layer were obtained.
基金Project supported by National Natural Science Foundation of China （Grant No 90207004） and State Key Fundamental Research Project of China.
文摘In this paper, a method to fabricate Silicon-on-Nothing （SON） MOSFETs using H^＋ and He^＋ co-implantation is presented. The technique is compatible with conventional CMOS technology and its feasibility has been experimentally demonstrated. SON MOSFETs with 50nm gate length have been fabricated. Compared with the corresponding bulk MOSFETs, the SON MOSFETs show higher on current, reduced leakage current and lower subthreshold slope.
基金supported by the GuangdongMajor Project of Basic and Applied Basic Research(2023B0303000012)Guangdong Science Foundation for Distinguished Young Scholars(2022B1515020073)Shenzhen Science and Technology Program(JCYJ20220818102809020).
文摘In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge termination.The resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.
基金Project supported by the National Key Basic Research Special Fund of China(No.2007CB613404)the National High Technology Research and Development Program of China(No.2011AA010303)the National Natural Science Foundation of China(Nos.61090390, 60837001,60977045,60877014,60776057)
文摘H_5 photonic crystal（PC） microcavities co-implanted with erbium（Er） and oxygen（O） ions were fabricated on silicon-on-insulator（SOI） wafers.Photoluminescence（PL） measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identically implanted unpatterned SOI wafer.In addition,we also explored the adjustment of cavity modes by changing the structural parameters of the PC,and the measured results showed that the cavity-resonant peaks shifted towards shorter wavelengths as the radius of the air holes increased,which is consistent with the theoretical simulation.
