With the merits of non-contact,highly efficient,and parallel computing,optoelectronic synaptic devices combining sensing and memory in a single unit are promising for constructing neuromorphic computing and artificial...With the merits of non-contact,highly efficient,and parallel computing,optoelectronic synaptic devices combining sensing and memory in a single unit are promising for constructing neuromorphic computing and artificial visual chip.Based on this,a N:ZnO/MoS_(2)-heterostructured flexible optoelectronic synaptic device is developed in this work,and its capability in mimicking the synaptic behaviors is systemically investigated under the electrical and light signals.Versatile synaptic functions,including synaptic plasticity,long-term/short-term memory,and learning-forgetting-relearning property,have been achieved in this synaptic device.Further,an artificial visual memory system integrating sense and memory is emulated with the device array,and the visual memory behavior can be regulated by varying the light parameters.Moreover,the optoelectronic co-modulation behavior is verified by applying mixed electric and light signals to the array.In detail,a transient recovery property is discovered when the electric signals are applied in synergy during the decay of the light response,of which property facilitates the development of robust artificial visual systems.Furthermore,by superimposing electrical signals during the light response process,a differentiated response of the array is achieved,which can be used as a proof of concept for the color perception of the artificial visual system.展开更多
The explosively developed era of big-data compels the increasing demand of nonvolatile memory with high efficiency and excellent storage properties.Herein,we fabricated a high-speed photoelectric multilevel memory dev...The explosively developed era of big-data compels the increasing demand of nonvolatile memory with high efficiency and excellent storage properties.Herein,we fabricated a high-speed photoelectric multilevel memory device for neuromorphic computing.The novel two-dimensional(2D)MoSSe with a unique Janus structure was employed as the channel,and the stack of Al_(2)O_(3)/black phosphorus quantum dots(BPQDs)/Al_(2)O_(3)was adopted as the dielectric.The storage performance of the resulting memory could be verified by the endurance and retention tests,in which the device could remain stable states of programming and erasing even after 1,000 cycles and 1,000 s.The multibit storage could be realized through both different voltage amplitudes and pulse numbers,which could achieve 6 bits(64 distinguishable levels)under pulse width of 50 ns.Furthermore,our memory device also could realize the simulations of synapses in human brain with optical and electric modulations synergistically,such as excitatory post-synaptic current(EPSC),long-term potentiation/depression(LTP/LTD),and spike-timing-dependent plasticity(STDP).Neuromorphic computing was successfully achieved through a high recognition of handwritten digits up to 92.5%after 103 epochs.This research is a promising avenue for the future development of efficient memory and artificial neural network systems.展开更多
基金supported by the National Natural Science Foundation of China(No.62174068).
文摘With the merits of non-contact,highly efficient,and parallel computing,optoelectronic synaptic devices combining sensing and memory in a single unit are promising for constructing neuromorphic computing and artificial visual chip.Based on this,a N:ZnO/MoS_(2)-heterostructured flexible optoelectronic synaptic device is developed in this work,and its capability in mimicking the synaptic behaviors is systemically investigated under the electrical and light signals.Versatile synaptic functions,including synaptic plasticity,long-term/short-term memory,and learning-forgetting-relearning property,have been achieved in this synaptic device.Further,an artificial visual memory system integrating sense and memory is emulated with the device array,and the visual memory behavior can be regulated by varying the light parameters.Moreover,the optoelectronic co-modulation behavior is verified by applying mixed electric and light signals to the array.In detail,a transient recovery property is discovered when the electric signals are applied in synergy during the decay of the light response,of which property facilitates the development of robust artificial visual systems.Furthermore,by superimposing electrical signals during the light response process,a differentiated response of the array is achieved,which can be used as a proof of concept for the color perception of the artificial visual system.
基金the National Natural Science Foundation of China(NSFC)(Nos.92064009,61904033,and 62004044)Shanghai Rising-Star Program(No.19QA1400600)+1 种基金the Program of Shanghai Subject Chief Scientist(No.18XD1402800)the Support Plans for the Youth Top-Notch Talents of China,and the National Postdoctoral Program for Innovative Talents(No.BX2021070).
文摘The explosively developed era of big-data compels the increasing demand of nonvolatile memory with high efficiency and excellent storage properties.Herein,we fabricated a high-speed photoelectric multilevel memory device for neuromorphic computing.The novel two-dimensional(2D)MoSSe with a unique Janus structure was employed as the channel,and the stack of Al_(2)O_(3)/black phosphorus quantum dots(BPQDs)/Al_(2)O_(3)was adopted as the dielectric.The storage performance of the resulting memory could be verified by the endurance and retention tests,in which the device could remain stable states of programming and erasing even after 1,000 cycles and 1,000 s.The multibit storage could be realized through both different voltage amplitudes and pulse numbers,which could achieve 6 bits(64 distinguishable levels)under pulse width of 50 ns.Furthermore,our memory device also could realize the simulations of synapses in human brain with optical and electric modulations synergistically,such as excitatory post-synaptic current(EPSC),long-term potentiation/depression(LTP/LTD),and spike-timing-dependent plasticity(STDP).Neuromorphic computing was successfully achieved through a high recognition of handwritten digits up to 92.5%after 103 epochs.This research is a promising avenue for the future development of efficient memory and artificial neural network systems.
