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Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology 被引量:2
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作者 王伟 黄北举 +1 位作者 董赞 陈弘达 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第1期677-683,共7页
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit ... A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes: it can emit visible to near infra-red (NIR) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored. 展开更多
关键词 optoelectronic integrated circuit complementary metal-oxide-semiconductor technology silicon-based light emitting device ELECTROLUMINESCENCE
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CMOS传感器紫外敏化膜层的厚度优化及其光电性能测试 被引量:8
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作者 刘琼 马守宝 +3 位作者 钱晓晨 阮俊 卢忠荣 陶春先 《光子学报》 EI CAS CSCD 北大核心 2017年第6期225-230,共6页
采用真空热阻蒸方式在CMOS图像传感器感光面上镀制不同厚度性比价高的Lumogen薄膜.研究发现不同Lumogen薄膜厚度的CMOS传感器的暗电流噪声未发生明显变化,说明真空热蒸发方式对互补金属氧化物半导体器件本身未造成热损伤;光响应非均匀... 采用真空热阻蒸方式在CMOS图像传感器感光面上镀制不同厚度性比价高的Lumogen薄膜.研究发现不同Lumogen薄膜厚度的CMOS传感器的暗电流噪声未发生明显变化,说明真空热蒸发方式对互补金属氧化物半导体器件本身未造成热损伤;光响应非均匀度随膜厚增加而增大;动态范围却随膜厚增加而减小;量子效率随膜厚增加呈现先增大后减小.同时,研究发现敏化膜层最佳厚度为389nm,此时CMOS传感器的量子效率提高了10%,且光响应非均匀度,动态范围均在相对较好的范围内. 展开更多
关键词 传感器技术 薄膜技术 紫外敏化 互补金属氧化物半导体传感器 荧光材料 量子效率 动态范围
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CMOS器件单粒子效应电荷收集机理 被引量:2
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作者 董刚 封国强 +1 位作者 陈睿 韩建伟 《北京航空航天大学学报》 EI CAS CSCD 北大核心 2014年第6期839-843,共5页
针对90 nm CMOS(Complementary Metal Oxide Semiconductor)工艺,采用三维数值模拟方法,研究了反相器中NMOS(Negative channel-Metal-Oxide-Semiconductor)晶体管与PMOS(Positive channel-Metal-Oxide-Semiconductor)晶体管的单粒子瞬变... 针对90 nm CMOS(Complementary Metal Oxide Semiconductor)工艺,采用三维数值模拟方法,研究了反相器中NMOS(Negative channel-Metal-Oxide-Semiconductor)晶体管与PMOS(Positive channel-Metal-Oxide-Semiconductor)晶体管的单粒子瞬变(SET,Single Event Transient)电流脉冲,深入分析了PMOSFET(Positive channel-Metal-Oxide-Semiconductor FieldEffect Transistor)与NMOSFET(Negative channel-Metal-Oxide-Semiconductor Field-Effect Transistor)发生单粒子效应时电荷输运过程和电荷收集机理.研究结果表明,由于电路耦合作用,反相器中晶体管的电荷收集与单个晶体管差异显著;反相器中PMOS晶体管电荷收集过程中存在寄生双极放大效应,NMOS晶体管中不存在寄生双极放大效应;由于双极放大效应,90 nm工艺下PMOS晶体管产生的SET电压脉冲比NMOS晶体管产生的电压脉冲持续时间更长,进而导致PMOS晶体管的SET效应更加敏感.研究结果为数字电路SET的精确建模、进行大规模集成电路SET效应模拟提供了参考依据. 展开更多
关键词 单粒子瞬变 重离子 寄生双极放大效应 反相器 电荷收集 cmos工艺
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10 Gbit/s 0.25μm CMOS 1∶4 demultiplexer
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作者 丁敬峰 王志功 +3 位作者 朱恩 王贵 夏春晓 熊明珍 《Journal of Southeast University(English Edition)》 EI CAS 2005年第2期141-144,共4页
A 10 Gbit/s (STM-64, OC-192) 1:4 demultiplexer (DEMUX) with 4-phase clock wasachieved in TSMC's standard 0.25 μm complementary metal-oxide-semiconductor (CMOS) technique. Allof the circuits are in source coupled ... A 10 Gbit/s (STM-64, OC-192) 1:4 demultiplexer (DEMUX) with 4-phase clock wasachieved in TSMC's standard 0.25 μm complementary metal-oxide-semiconductor (CMOS) technique. Allof the circuits are in source coupled FET logic (SCFL) to achieve as high as possible speed andsuppress common mode distortions. This DEMUX is featured by constant-delay buffers to generate a4-phase clock and adjust skews of the four channel outputs. The fabricated DEMUX operates error freeat 10 Gbit/s by 2^(31) -1 pseudorandom bit sequences (PRBS) via on-wafer testing. The measured rootmean square (rms) jitter, rising and failing edge of the eye-diagram are 11, 123 and 137 ps,respectively. The chip size is 0.9 mm x 1.2 mm and the power dissipation is 550 mW with a 3. 3 Vsupply. 展开更多
关键词 optical receive complementary metal-oxide-semiconductor (cmos) demultiplexer (DEMUX) LATCH
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Design of CMOS class-E power amplifier for low power applications
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作者 袁成 李智群 +1 位作者 刘继华 王志功 《Journal of Southeast University(English Edition)》 EI CAS 2009年第2期180-184,共5页
A fully integrated class-E power amplifier(PA) at 2.4 GHz implemented in a 0. 18 μm 6-metal-layer mixed/RF CMOS ( complementary metal-oxide-semiconductor transistor ) technology is presented. A two-stage amplific... A fully integrated class-E power amplifier(PA) at 2.4 GHz implemented in a 0. 18 μm 6-metal-layer mixed/RF CMOS ( complementary metal-oxide-semiconductor transistor ) technology is presented. A two-stage amplification structure is chosen for this PA. The driving stage produces a high swing switch signal by using resonation technology. The output stage is designed as a class-E topology to realize the power amplification. Under a 1.2 V power supply, the PA delivers a maximum output power of 8. 8 dBm with a power-added efficiency (PAE) of 44%. A new power control method for the class-E power amplifier is described. By changing the amplitude and duty cycle of the signal which enters the class-E switch transistor, the output power can be covered from - 3 to 8. 8 dBm through a three-bit control word. The proposed PA can be used in low power applications, such as wireless sensor networks and biotelemetry systems. 展开更多
关键词 class-E power amplifier complementary metal-oxidesemiconductor transistor(cmos technology low power application
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Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors 被引量:4
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作者 马林东 李豫东 +7 位作者 郭旗 文林 周东 冯婕 刘元 曾骏哲 张翔 王田珲 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第11期264-268,共5页
Radiation effects on complementary metal-oxide-semiconductor(CMOS) active pixel sensors(APS) induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology.... Radiation effects on complementary metal-oxide-semiconductor(CMOS) active pixel sensors(APS) induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad(Si) ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose(TID) damage. 展开更多
关键词 complementary metal-oxide-semiconductorcmos active pixel sensor dark current fixedpattern noise quantum efficiency
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局部化混合晶向应变硅CMOS结构及其制备方法
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作者 黄晓橹 颜丙勇 邵华 《半导体技术》 CAS CSCD 北大核心 2012年第8期617-622,633,共7页
描述了混合晶向技术原理以及各种硅衬底晶向的反型层中载流子迁移率特性,分析了应变硅技术对载流子迁移率的增强机理,介绍了DSL这种应变硅技术的工艺实现方法。提出了将混合晶向技术和应变硅技术两者有机结合以提高载流子迁移率的局部... 描述了混合晶向技术原理以及各种硅衬底晶向的反型层中载流子迁移率特性,分析了应变硅技术对载流子迁移率的增强机理,介绍了DSL这种应变硅技术的工艺实现方法。提出了将混合晶向技术和应变硅技术两者有机结合以提高载流子迁移率的局部化混合晶向应变硅基本思路,分析了基于该基本思路的局部化混合晶向应变硅CMOS结构及其电学性能。最后详细描述了局部化混合晶向应变硅CMOS结构工艺流程,为开发高性能、低功耗CMOS集成电路提供了一个科学合理的工艺制备方法。 展开更多
关键词 混合晶向技术(HOT) 应变硅 局部化 迁移率 互补金属氧化物半导体(cmos)
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Wafer-scale carbon-based CMOS PDK compatible with siliconbased VLSI design flow
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作者 Minghui Yin Haitao Xu +7 位作者 Yunxia You Ningfei Gao Weihua Zhang Hongwei Liu Huanhuan Zhou Chen Wang Lian-Mao Peng Zhiqiang Li 《Nano Research》 SCIE EI CSCD 2024年第8期7557-7566,共10页
Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,enc... Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure platforms.In this study,we present the development of a waferscale 3μm carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design flow.The proposed 3μm-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 ns.Validation of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator circuits.Leveraging the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μm.This research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements. 展开更多
关键词 carbon nanotube field-effect transistors(CNTFETs) complementary metal-oxide-semiconductor(cmos) process design kit(PDK) wafer-scale very-large-scale integration(VLSI)
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Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology 被引量:1
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作者 Ge-liang YANG Zhi-gong WANG +3 位作者 Zhi-qun LI Qin LI Fa-en LIU Zhu LI 《Journal of Zhejiang University-Science C(Computers and Electronics)》 SCIE EI 2013年第4期288-295,共8页
A Ka-band sub-harmonically pumped resistive mixer (SHPRM) was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor (CMOS) technology. An area-effective asymmetric broadside c... A Ka-band sub-harmonically pumped resistive mixer (SHPRM) was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor (CMOS) technology. An area-effective asymmetric broadside coupled spiral Marchand balance-to-unbalance (balun) with magnitude and phase imbalance compensation is used in the mixer to transform local oscillation (LO) signal from single to differential mode. The results showed that the SHPRM achieves the conversion gain of -15- -12.5 dB at fixed fIF=0.5 GHz with 8 dBm LO input power for the radio frequency (RF) bandwidth of 28 35 GHz. The in-band LO-intermediate freqency (IF), RF-IF, and LO-RF isolations are better than 31, 34, and 36 dB, respectively. Besides, the 2LO-IF and 2LO-RF isolations are better than 60 and 45 dB, respectively. The measured input referred PIdB and 3rd-order inter-modulation intercept point (IIP3) are 0.5 and 10.5 dBm, respectively. The measurement is performed under a gate bias voltage as low as 0.1 V and the whole chip only occupies an area of 0.33 mm^2 including pads. 展开更多
关键词 complementary metal-oxide-semiconductor cmos Sub-harmonically pumped resistive mixer (SHPRM) Mar-chand balance-to-unbalance (balun) Millimeter wave (MMW) Monolithic microwave integrated circuit (MMIC)
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DC Gain Analysis of Scaled CMOS Op Amp in Sub-100 nm Technology Nodes:A Research Based on Channel Length Modulation Effect
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作者 程嘉 蒋建飞 蔡琪玉 《Journal of Shanghai Jiaotong university(Science)》 EI 2009年第5期613-619,共7页
Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field ... Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4(BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced,which only needs a few technology parameters.With this transistor intrinsic gain model,complementary metal-oxide-semiconductor(CMOS) operational amplifier(op amp) DC gain could be predicted.A two-stage folded cascode op amp is used as an example in this work.Non-minimum length device is used to improve the op amp DC gain.An improvement of 20 dB is proved when using doubled channel length design.Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain.After these,a full op amp DC gain scaling roadmap is proposed,from 130 nm technology node to 32 nm technology node.Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB.Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology.The prediction based on our simplified gain model agrees with SPICE simulation results. 展开更多
关键词 analog circuits complementary metal-oxide-semiconductor cmos analog integrated circuits MODELING operational amplifiers simulation technology node
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Simulation analysis of combined UV/blue photodetector in CMOS process by technology computer-aided design
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作者 Changping CHEN Xiangliang JIN +2 位作者 Lizhen TANG Hongjiao YANG Jun LUO 《Frontiers of Optoelectronics》 EI CSCD 2014年第1期69-73,共5页
A composite ultraviolet (UV)/blue photode- tector structure has been proposed, which is composed of P-type silicon substrate, Pwelb Nwell and N-channel metal- oxide-semiconductor field-effect transistor (NMOSFET) ... A composite ultraviolet (UV)/blue photode- tector structure has been proposed, which is composed of P-type silicon substrate, Pwelb Nwell and N-channel metal- oxide-semiconductor field-effect transistor (NMOSFET) realized in the PweH. In this photodetector, lateral ring- shaped Pwell-Nwell junction was used to separate the photogenerated carriers, and non-equilibrium excess hole was injected to the Pwell bulk for changing the bulk potential and shifting the NMOSFET's threshold voltage as well as the output drain current. By technology computer-aided design (TCAD) device, simulation and analysis of this proposed photodetector were carried out. Simulation results show that the combined photodetector has enhanced responsivity to UV/blue spectrum. More- over, it exhibits very high sensitivity to weak and especially ultral-weak optical light. A sensitivity of 7000 A/W was obtained when an incident optical power of 0.01 μW was illuminated to the photodetector, which is 35000 times higher than the responsivity of a conventional silicon-based UV photodiode (usually is about 0.2 A/W). As a result, this proposed combined photodetector has great potential values for UV applications. 展开更多
关键词 ultraviolet (UV)golue photodetector weaklight detection complimentary metal-oxide-semiconductorcmos technology computer-aided design (TCAD)
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一种用于单细胞阻抗检测的CMOS-MEMS单芯片电化学阻抗传感器
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作者 聂鉴卿 蔡盛训 +2 位作者 王琨 关一民 刘德盟 《微纳电子技术》 CAS 2024年第12期114-121,共8页
传统的基于贵金属的共面电极价格昂贵,且难以与互补金属氧化物半导体(CMOS)工艺集成,阻碍了采用共面电极的传感器的量产与大规模应用。开发了一种基于微机电系统(MEMS)工艺的共面钽电极电化学阻抗传感器,该传感器集成了精准微泵和微流道... 传统的基于贵金属的共面电极价格昂贵,且难以与互补金属氧化物半导体(CMOS)工艺集成,阻碍了采用共面电极的传感器的量产与大规模应用。开发了一种基于微机电系统(MEMS)工艺的共面钽电极电化学阻抗传感器,该传感器集成了精准微泵和微流道,可实现单细胞在共面电极上的精准操控和非侵入性电阻抗检测和分析。设计了3组不同宽度和间距的钽电极,其中30μm/10μm的配置对细胞响应最为灵敏。细胞流过电极的动态阻抗测试表明,在500 kHz~2 MHz频率范围内,传感器能有效检测HEK 293细胞和CHO细胞,两种细胞的阻抗响应指数分别达到3.93%和1.80%。研究表明基于钽电极的电化学阻抗传感器在单细胞阻抗分析中有较高的应用潜力,测试结果可以指导高通量、低成本的单细胞电阻抗检测芯片的量产开发。 展开更多
关键词 单细胞阻抗检测 共面钽电极 微型阻抗传感器 精准微泵 互补金属氧化物半导体(cmos)工艺兼容
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低功耗全数字电容式传感器接口电路设计 被引量:22
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作者 邓芳明 何怡刚 +2 位作者 张朝龙 冯伟 吴可汗 《仪器仪表学报》 EI CAS CSCD 北大核心 2014年第5期994-998,共5页
电容式传感器被广泛地应用在集成传感器的设计中。近年来,随着无线传感器与射频识别技术的迅速发展,低功耗传感器及其接口电路设计成为热点。低功耗接口电路设计中往往采用低的电源电压,然而当器件工艺进入纳米时代后,低的电源电压使得... 电容式传感器被广泛地应用在集成传感器的设计中。近年来,随着无线传感器与射频识别技术的迅速发展,低功耗传感器及其接口电路设计成为热点。低功耗接口电路设计中往往采用低的电源电压,然而当器件工艺进入纳米时代后,低的电源电压使得在电压幅度域处理传感器信号的传统接口电路设计所允许的电压范围进一步降低。针对这种挑战,设计了一种新型的全数字电容式传感器接口电路。该设计基于锁相环原理,将传感器信号处理转移到频率域,因此该设计可以采用全数字结构。设计的接口电路结合湿度传感器,采用中芯国际0.18μm CMOS工艺流片,后期测试结果显示,该接口电路在芯片面积、线性度及功耗上获得了优异性能。尤其是在0.5 V电源电压下,整个接口电路只消耗了1.05μW功率,相比传统传感器接口电路功耗性能获得了极大提升,此设计确实为低功耗传感器接口电路设计提供了一种新方法。 展开更多
关键词 电容式传感器 全数字接口电路 锁相环 cmos工艺
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二十四所半导体工艺技术发展历程与展望 被引量:1
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作者 何开全 王志宽 钟怡 《微电子学》 CAS CSCD 北大核心 2008年第1期17-22,共6页
回顾了中电科技集团公司第二十四研究所自建所以来的半导体集成电路工艺发展历程。晶圆尺寸从1.5吋(40 mm)到6吋(150 mm),特征线宽从10μm到0.5μm,器件特征频率从低频到射频,工作电压从5 V到800 V,包括射频和高压大功率的各种器件。从... 回顾了中电科技集团公司第二十四研究所自建所以来的半导体集成电路工艺发展历程。晶圆尺寸从1.5吋(40 mm)到6吋(150 mm),特征线宽从10μm到0.5μm,器件特征频率从低频到射频,工作电压从5 V到800 V,包括射频和高压大功率的各种器件。从研制成功全国第一块大规模集成电路至今,二十四所作为全国唯一的模拟集成电路专业研究所,在各个领域均取得了突出的成就,见证了中国半导体集成电路事业的发展历程。最后,展望了二十四所模拟及专用集成电路工艺技术的发展前景。 展开更多
关键词 半导体工艺 双极 互补双极 cmos VDMOS BIcmos SOI
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Neuronal signal detecting and stimulating circuit array for monolithic integrated MEA
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作者 谢书珊 王志功 +1 位作者 潘海仙 吕晓迎 《Journal of Southeast University(English Edition)》 EI CAS 2009年第2期175-179,共5页
A neuronal signal detecting circuit and a neuronal signal stimulating circuit designed for a monolithic integrated MEA(micro-electrode array) system are described. As a basic cell of the circuits, an OPA( operation... A neuronal signal detecting circuit and a neuronal signal stimulating circuit designed for a monolithic integrated MEA(micro-electrode array) system are described. As a basic cell of the circuits, an OPA( operational amplifier) is designed with low power, low noise, small size and high gain. The detecting circuit has a chip area of 290 μm × 400 μm, a power dissipation of 2.02 mW, an equivalent input noise of 17.72 nV/ Hz, a gain of 60. 5 dB, and an output voltage from - 2. 48 to + 2. 5 V. The stimulating circuit has a chip area of 130 μm × 290 μm, a power dissipation of 740 μW, and an output voltage from - 2. 5 to 2. 04 V. The parameters show that two circuits are suitable for a monolithic integrated MEA system. The detecting circuit and MEA have been fabricated. The test results show that the detecting circuit works well. 展开更多
关键词 neuronal signal detecting noise micro-electrode array MEA complementary metal-oxide-semiconductor transistor cmos technology
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Wafer-scale fabrication of carbon-nanotube-based CMOS transistors and circuits with high thermal stability 被引量:1
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作者 Nan Wei Ningfei Gao +7 位作者 Haitao Xu Zhen Liu Lei Gao Haoxin Jiang Yu Tian Yufeng Chen Xiaodong Du Lian-Mao Peng 《Nano Research》 SCIE EI CSCD 2022年第11期9875-9880,共6页
Thanks to its single-atomic-layer structure,high carrier transport,and low power dissipation,carbon nanotube electronics is a leading candidate towards beyond-silicon technologies.Its low temperature fabrication proce... Thanks to its single-atomic-layer structure,high carrier transport,and low power dissipation,carbon nanotube electronics is a leading candidate towards beyond-silicon technologies.Its low temperature fabrication processes enable three-dimensional(3D)integration with logic and memory(static random access memory(SRAM),magnetic random access memory(MRAM),resistive random access memory(RRAM),etc.)to realize efficient near-memory computing.Importantly,carbon nanotube transistors require good thermal stability up to 400℃ processing temperature to be compatible with back-end-of-line(BEOL)process,which has not been previously addressed.In this work,we developed a robust wafer-scale process to build complementary carbon nanotube transistors with high thermal stability and good uniformity,where AlN was employed as electrostatic doping layer.The gate stack and passivation layer were optimized to realize high-quality interfaces.Specifically,we demonstrate 1-bit carbon nanotube full adders working under 250℃ with rail-to-rail outputs. 展开更多
关键词 carbon nanotube field-effect transistors complementary metal-oxide-semiconductor(cmos) thermal stability waferscale integrated circuits
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GPS导航接收机中可变增益放大器设计 被引量:1
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作者 黄敏 黄海生 +1 位作者 李鑫 王嘉齐 《导航定位学报》 CSCD 2019年第1期98-102,共5页
针对GPS接收机易受不同传输距离和多路径衰减效应的影响使得接收的信号强度不固定的问题,基于TSMC0.18μm互补金属氧化物半导体(CMOS)工艺设计一款可变增益放大器:它与脉冲宽度调制式自动增益控制和脉冲宽度译码器组成的自动增益控制电... 针对GPS接收机易受不同传输距离和多路径衰减效应的影响使得接收的信号强度不固定的问题,基于TSMC0.18μm互补金属氧化物半导体(CMOS)工艺设计一款可变增益放大器:它与脉冲宽度调制式自动增益控制和脉冲宽度译码器组成的自动增益控制电路保证接收信号强度输出的稳定;该电路的核心结构由五位二进制码控制五级级联放大电路来产生不同的增益。仿真结果表明:当电源电压为1.8V时,总的增益最小为14dB,最大可以达到73dB;并且在各个工艺角下增益误差都小于5%,噪声系数为19.68dB;输入1dB压缩点为—22.14dBm。 展开更多
关键词 可变增益放大器 互补金属氧化物半导体工艺 增益可控性 增益范围 自动增益控制
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Strain induced changes in performance of strained-Si/strained-Si1-yGey/relaxed-Si1-xGex MOSFETs and circuits for digital applications
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作者 Kumar Subindu Kumari Amrita Das Mukul K 《Journal of Central South University》 SCIE EI CAS CSCD 2017年第6期1233-1244,共12页
Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high perfor... Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high performance complementary metal-oxide-semiconductor(CMOS) circuits. Down scaling metal-oxide-semiconductor field-effect transistors(MOSFETs) into the deep submicron/nanometer regime forces the source(S) and drain(D) series resistance to become comparable with the channel resistance and thus it cannot be neglected. Owing to the persisting technological importance of strained Si devices, in this work, we propose a multi-iterative technique for evaluating the performance of strained-Si/strained-Si_(1-y)Ge_y/relaxed-Si_(1-x)Ge_x MOSFETs and its related circuits in the presence of S/D series resistance, leading to the development of a simulator that can faithfully plot the performance of the device and related digital circuits. The impact of strain on device/circuit performance is also investigated with emphasis on metal gate and high-k dielectric materials. 展开更多
关键词 complementary metal-oxide-semiconductor (cmos) HIGH-K dielectric material inverter metal-oxide-semiconductor FIELD-EFFECT transistors (MOSFETs) SiGe series resistance strain
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Small Area ROM Design for Embedded Applications
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作者 崔嵬 吴嗣亮 《Journal of Beijing Institute of Technology》 EI CAS 2007年第4期460-464,共5页
The compact full custom layout design of a 16 kbit mask-programmable complementary metal oxide semiconductor (CMOS) read only memory (ROM) with low power dissipation is introduced. By optimizing storage cell size and ... The compact full custom layout design of a 16 kbit mask-programmable complementary metal oxide semiconductor (CMOS) read only memory (ROM) with low power dissipation is introduced. By optimizing storage cell size and peripheral circuit structure, the ROM has a small area of 0.050 mm2 with a power-delay product of 0.011 pJ/bit at +1.8 V. The high packing density and the excellent power-delay product have been achieved by using SMIC 0.18 μm 1P6M CMOS technology. A novel and simple sense amplifier/driver structure is presented which restores the signal full swing efficiently and reduces the signal rising time by 2.4 ns, as well as the memory access time. The ROM has a fast access time of 8.6 ns. As a consequence, the layout design not only can be embedded into microprocessor system as its program memory, but also can be fabricated individually as ROM ASIC. 展开更多
关键词 complementary metal oxide semiconductor (cmos) technology read only memory (ROM) address decoder sense amplifier
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Visible-blind short-wavelength infrared photodetector with high responsivity based on hyperdoped silicon 被引量:2
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作者 XIAODONG QIU ZIJING WANG +2 位作者 XIAOTONG HOU XUEGONG YU DEREN YANG 《Photonics Research》 SCIE EI CSCD 2019年第3期351-358,共8页
Developing a low-cost, room-temperature operated and complementary metal-oxide-semiconductor(CMOS)compatible visible-blind short-wavelength infrared(SWIR) silicon photodetector is of interest for security,telecommunic... Developing a low-cost, room-temperature operated and complementary metal-oxide-semiconductor(CMOS)compatible visible-blind short-wavelength infrared(SWIR) silicon photodetector is of interest for security,telecommunications, and environmental sensing. Here, we present a silver-supersaturated silicon(Si:Ag)-based photodetector that exhibits a visible-blind and highly enhanced sub-bandgap photoresponse. The visible-blind response is caused by the strong surface-recombination-induced quenching of charge collection for short-wavelength excitation, and the enhanced sub-bandgap response is attributed to the deep-level electrontraps-induced band-bending and two-stage carrier excitation. The responsivity of the Si:Ag photodetector reaches 504 mA · W^(-1) at 1310 nm and 65 m A · W^(-1) at 1550 nm under-3 V bias, which stands on the stage as the highest level in the hyperdoped silicon devices previously reported. The high performance and mechanism understanding clearly demonstrate that the hyperdoped silicon shows great potential for use in optical interconnect and power-monitoring applications. 展开更多
关键词 Visible-blind short-wavelength infrared photodetector hyperdoped silicon complementary metal-oxide-semiconductor(cmos)
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