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Impact of Native Defects in the High Dielectric Constant Oxide HfSiO_4 on MOS Device Performance 被引量:2
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作者 董海宽 史力斌 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第1期92-95,共4页
Native dejects in HfSiO4 are investigated by first principles calculations. Transition levels of native detects can be accurately described by employing the nonlocal HSE06 hybrid functional. This methodology overcomes... Native dejects in HfSiO4 are investigated by first principles calculations. Transition levels of native detects can be accurately described by employing the nonlocal HSE06 hybrid functional. This methodology overcomes the band gap problem in traditional functionals. By band alignments among the Si, GaAs and HfSiO4. we are able to determine the position of defect levels in Si and GaAs relative to the HfSiO4 band gap. We evaluate the. possibility of these defects acting as fixed charge. Native defects lead to the change of valence and conduction band offsets. Gate leakage current is evaluated by the band offset. In addition, we also investigate diffusions of native defects, and discuss how they affect the MOS device performance. 展开更多
关键词 MOS SI of Impact of Native Defects in the High Dielectric constant Oxide HfSiO4 on MOS Device Performance GAAS in on
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Mechanism and kinetic properties of NO_3-initiated atmospheric degradation of DDT
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作者 Cai Liu Shanqing Li +3 位作者 Rui Gao Juan Dang Wenxing Wang Qingzhu Zhang 《Journal of Environmental Sciences》 SCIE EI CAS CSCD 2014年第3期601-607,共7页
In this article, the NO3 radical-initiated atmospheric oxidation degradation of DDT was theoretically investigated using molecular orbital theory calculations. All the calculations of intermediates, transition states ... In this article, the NO3 radical-initiated atmospheric oxidation degradation of DDT was theoretically investigated using molecular orbital theory calculations. All the calculations of intermediates, transition states and products were performed at the MPWB1K/6-311+G(3df,2p)//MPWB1K/6- 31+G(d,p) level of theory. Several energetically favorable reaction pathways were revealed. The formation mechanisms of secondary pollutants were presented and discussed. The rate constants were deduced over the temperature range of 273-333 K using canonical variational transition-state (CVT) theory with the small curvature tunneling (SCT) method. Our study shows that H abstraction from the alkyl group and NO3 addition to the Ca atom of the benzene ring are the dominant reaction pathways. The rate-temperature formula of the overall rate constants is k(T)(DDT+NO3) = (7.21 ~ 10-15)exp(-153.81/T) cm3/(mol.sec) over the possible atmospheric temperature range of 273-333 K. The atmospheric lifetime of DDT determined by NO3 radical is about 52.5 days, which indicates that it can be degraded in the gas phase within several months. 展开更多
关键词 DDT NO3 radicals atmospheric oxidation reaction mechanism rate constants
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