This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been ...This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.展开更多
The application of titanium dioxide(TiO_(2))in the photovoltaic(PV)field is gaining traction as this material can be deployed in doping-free heterojunction solar cells with the role of electron selective contact.For m...The application of titanium dioxide(TiO_(2))in the photovoltaic(PV)field is gaining traction as this material can be deployed in doping-free heterojunction solar cells with the role of electron selective contact.For modeling-based optimization of such contact,knowledge of the titanium oxide defect density of states(DOS)is crucial.In this paper,we report a method to extract the defect density through nondestructive optical measures,including the contribution given by small polaron optical transitions.The presence of both related to oxygen-vacancy defects and polarons is supported by the results of optical characterizations and the evaluation of previous observations resulting in a defect band fixed at 1 eV below the conduction band edge of the oxide.Solar cells employing pulsed laser deposited-TiO_(2)electron selective contacts were fabricated and characterized.The J-V curve of these cells showed,however,an S-shape,then a detailed analysis of the reasons for such behavior was carried out.We use a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances.A good matching between the experimental measurements and the adopted theoretical model was obtained.The extracted parameters are listed and analyzed to shed light on the reasons behind the low-performance cells.展开更多
ZnNiO thin films with different contents of Ni(0-10 at.%) were fabricated on quartz and Si(100) substrates by pulsed laser deposition(PLD).We measured the samples by X-ray diffraction(XRD),field-emission scanning elec...ZnNiO thin films with different contents of Ni(0-10 at.%) were fabricated on quartz and Si(100) substrates by pulsed laser deposition(PLD).We measured the samples by X-ray diffraction(XRD),field-emission scanning electron microscope(FE-SEM),X-ray photoelectron spectroscopy(XPS),ultraviolet-visible spectrometer(UV-VIS),and Hall testing.When the Ni contents were below 3 at.%,partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases,which enhanced the conductivity of the film.When the Ni contents were above 3 at.%,Ni ions were at the interstitial sites,and Ni-related clusters and defects were able to emerge in the films,resulting in a worsening of electrical and optical properties.A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature.展开更多
As the fundamental energy storage components in electronic systems,dielectric capacitors with high power densities were demanded.In this work,the anti-ferroelectric Pb_(0.89)La_(0.06)Sr_(0.05)(Zr_(0.95)Ti_(0.05))O_(3)...As the fundamental energy storage components in electronic systems,dielectric capacitors with high power densities were demanded.In this work,the anti-ferroelectric Pb_(0.89)La_(0.06)Sr_(0.05)(Zr_(0.95)Ti_(0.05))O_(3)(PLSZT)ceramics and thin film capacitor were successfully fabricated by a solid-state reaction route and pulsed laser deposition method,respectively.The ferroelectric,dielectric,energy-storage properties,and temperature stability of anti-ferroelectric PLSZT capacitor were investigated in detail.By compared with the PLSZT ceramic(energy storage density is 1.29 J/cm^(3) with an efficiency of 78.7%under 75 kV/cm),the anti-ferroelectric PLSZT thin film capacitors exhibited the enhanced energy storage density of 52.6 J/cm^(3) with efficiency of 67.7%under an electric field as high as 2068.9 kV/cm,and the enhanced energy-storage temperature stabilities from room temperature(RT)to more than 200℃ were demonstrated,and the oxygen defects mechanism and size effect were discussed.Moreover,the fast charging(~0.05 μs)and discharging(~0.15 μs)time were certified for the anti-ferroelectric PLSZT film capacitor.These findings broaden the horizon for PLSZT anti-ferroelectrics in high energy storage properties and show promising for manufacturing pulse power capacitor.展开更多
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2022YFA1603903 and 2021YFA0718700)the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0101340002)+3 种基金the National Natural Science Foundation of China(Grant Nos.61971415,51972012,11927808,119611410,11961141008,and 12274439)the Strategic Priority Research Program(B)of Chinese Academy of Sciences(Grant No.XDB25000000)Beijing Natural Science Foundation(Grant No.Z190008)Basic Research Youth Team of Chinese Academy of Sciences(Grant No.2022YSBR-048).
文摘This paper presents high quality YBa_(2)Cu_(3)O_(7-δ)(YBCO)thin films on LaAlO_(3)substrate for microwave devices prepared by pulsed laser deposition(PLD).The double-sided YBCO films cover a large area and have been optimized for key parameters relevant to microwave device applications,such as surface morphology and surface resistance(R_(s)).This was achieved by improving the target quality and increasing the oxygen pressure during deposition,respectively.To evaluate the suitability of the YBCO films for microwave devices,a pair of microwave filters based on microstrip fabricated on films from this work and a commercial company were compared.The results show that the YBCO films in this work could completely meet the requirements for microwave devices.
文摘The application of titanium dioxide(TiO_(2))in the photovoltaic(PV)field is gaining traction as this material can be deployed in doping-free heterojunction solar cells with the role of electron selective contact.For modeling-based optimization of such contact,knowledge of the titanium oxide defect density of states(DOS)is crucial.In this paper,we report a method to extract the defect density through nondestructive optical measures,including the contribution given by small polaron optical transitions.The presence of both related to oxygen-vacancy defects and polarons is supported by the results of optical characterizations and the evaluation of previous observations resulting in a defect band fixed at 1 eV below the conduction band edge of the oxide.Solar cells employing pulsed laser deposited-TiO_(2)electron selective contacts were fabricated and characterized.The J-V curve of these cells showed,however,an S-shape,then a detailed analysis of the reasons for such behavior was carried out.We use a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances.A good matching between the experimental measurements and the adopted theoretical model was obtained.The extracted parameters are listed and analyzed to shed light on the reasons behind the low-performance cells.
基金Project supported by the National Natural Science Foundation of China (No. 51072181)the Doctoral Fund of Ministry of Education of China (No. 20090101110044)
文摘ZnNiO thin films with different contents of Ni(0-10 at.%) were fabricated on quartz and Si(100) substrates by pulsed laser deposition(PLD).We measured the samples by X-ray diffraction(XRD),field-emission scanning electron microscope(FE-SEM),X-ray photoelectron spectroscopy(XPS),ultraviolet-visible spectrometer(UV-VIS),and Hall testing.When the Ni contents were below 3 at.%,partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases,which enhanced the conductivity of the film.When the Ni contents were above 3 at.%,Ni ions were at the interstitial sites,and Ni-related clusters and defects were able to emerge in the films,resulting in a worsening of electrical and optical properties.A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature.
基金financially supported by National Natural Science Foundation of China(NSFC)(Grant Nos.51702055,62073084,11904056,and 51604087)the Guangdong Provincial Natural Science Foundation of China(Grant No.2016A030313718)+1 种基金the Science and Technology Program of Guangdong Province of China(Grant Nos.2016A010104018 and 2017A010104022)Special Funds for the Cultivation of Guangdong College Students’Scientific and Technological Innovation(Climbing Program Special Funds,Grant No.pdjh2020a0174,pdjh2019a0147).
文摘As the fundamental energy storage components in electronic systems,dielectric capacitors with high power densities were demanded.In this work,the anti-ferroelectric Pb_(0.89)La_(0.06)Sr_(0.05)(Zr_(0.95)Ti_(0.05))O_(3)(PLSZT)ceramics and thin film capacitor were successfully fabricated by a solid-state reaction route and pulsed laser deposition method,respectively.The ferroelectric,dielectric,energy-storage properties,and temperature stability of anti-ferroelectric PLSZT capacitor were investigated in detail.By compared with the PLSZT ceramic(energy storage density is 1.29 J/cm^(3) with an efficiency of 78.7%under 75 kV/cm),the anti-ferroelectric PLSZT thin film capacitors exhibited the enhanced energy storage density of 52.6 J/cm^(3) with efficiency of 67.7%under an electric field as high as 2068.9 kV/cm,and the enhanced energy-storage temperature stabilities from room temperature(RT)to more than 200℃ were demonstrated,and the oxygen defects mechanism and size effect were discussed.Moreover,the fast charging(~0.05 μs)and discharging(~0.15 μs)time were certified for the anti-ferroelectric PLSZT film capacitor.These findings broaden the horizon for PLSZT anti-ferroelectrics in high energy storage properties and show promising for manufacturing pulse power capacitor.
