Deep dielectric charging/discharging,caused by high energy electrons,is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures.The Jovian p...Deep dielectric charging/discharging,caused by high energy electrons,is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures.The Jovian planets,including Saturn,Uranus,Neptune and Jupiter’s moons,are believed to have robust electron radiation belts at relativistic energies.In particular,Jupiter is thought to have caused at least 42 internal electrostatic discharge events during the Voyager 1 flyby.With the development of deep space exploration,there is an increased focus on the deep dielectric charging effects in the orbits of Jovian planets.In this paper,GEANT4,a Monte Carlo toolkit,and radiation-induced conductivity(RIC)are used to calculate deep dielectric charging effects for Jovian planets.The results are compared with the criteria for preventing deep dielectric charging effects in Earth orbit.The findings show that effective criteria used in Earth orbit are not always appropriate for preventing deep dielectric charging effects in Jovian orbits.Generally,Io,Europa,Saturn(R_S=6),Uranus(L=4.73)and Ganymede missions should have a thicker shield or higher dielectric conductivity,while Neptune(L=7.4)and Callisto missions can have a thinner shield thickness or a lower dielectric conductivity.Moreover,dielectrics grounded with double metal layers and thinner dielectrics can also decrease the likelihood of discharges.展开更多
Spatio-temporal distribution of individual filament in a square superlattice pattern, which consists of large and small spots （filaments）, is studied in atmospheric dielectric barrier discharges. The spatial distrib...Spatio-temporal distribution of individual filament in a square superlattice pattern, which consists of large and small spots （filaments）, is studied in atmospheric dielectric barrier discharges. The spatial distributions of the two discharges for individual large filament along the direction perpendicular to the electrode are estimated by the distributions of light signals along the electrode. It is found that the discharge at the rising edge of the applied voltage is with a wider column, weaker current, and longer current pulse duration in comparison with that at the falling edge展开更多
The deep dielectric charging effect monitor(DDCEM)has been designed to study the internal charging effect by measuring the charging currents and potentials inside the spacecraft.It is equipped on three Chinese navigat...The deep dielectric charging effect monitor(DDCEM)has been designed to study the internal charging effect by measuring the charging currents and potentials inside the spacecraft.It is equipped on three Chinese navigation satellites in a circular medium earth orbit(MEO)with 22000 km average height and 55°inclinations.Numerical simulation based on the Geant4-RIC method was used to evaluate the data of DDCEM.The data during May to November 2019 on one of the three satellites show that the charging currents of DDCEM were negatively enhanced when the satellite moved into the outer radiation belt.The currents reached the negative maximum during a significant electron enhancement in September 2019.Positive currents were also detected besides negative currents that were caused by the deposition of electrons in the sensor.The causation of positive currents in the space environment may be that the low-energy electrons cannot penetrate the satellite skin and make it charging to negative potential,the reference ground of DDCEM that is connected to the satellite skin drops below zero by the low-energy electrons so that the output currents turn to positive.Ground experiment was used to simulate the causation of positive currents and the result verified our theory.展开更多
The effect of the different re-oxidation annealing （ROA） processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric c...The effect of the different re-oxidation annealing （ROA） processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance-voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 ℃ for 30 min, while a large num- ber of effective dielectric charges are generated. The components at the SiO2/SiC interface are analyzed by X-ray photoelectron spectroscopy （XPS） testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process.展开更多
Output voltage drifting was observed in MEMS gyroscopes. Other than the quadrature error, frequency mismatch and quality factor, the dielectric parasitic charge was thought to be a major determinant. We studied the me...Output voltage drifting was observed in MEMS gyroscopes. Other than the quadrature error, frequency mismatch and quality factor, the dielectric parasitic charge was thought to be a major determinant. We studied the mechanism and variation of the parasitic charge in the MEMS gyroscopes, and analyzed the effect of the parasitic charge on the output stability. This phenomenon was extremely obvious in the Pyrex encapsulated MEMS gyroscopes. Due to the DC voltage required for the electrostatic actuation, the parasitic charge in the dielectric layer would accumulate and induce a residual voltage. This voltage had an impact on the resonant frequency of the gyroscopes, so as to affect the output stability. The theoretical studies were also confirmed by our experimental results. It was shown that the parasitic charge was harmful to the output stability of MEMS gyroscopes.展开更多
基金supported by Beijing Municipal Natural Science Foundation-Quantitative Research on Mitigating Deep Dielectric Charging Effects in Jupiter orbits(No.3184048)National Key Scientific Instrument and Equipment Development Projects,China(No.2012YQ03014207)。
文摘Deep dielectric charging/discharging,caused by high energy electrons,is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures.The Jovian planets,including Saturn,Uranus,Neptune and Jupiter’s moons,are believed to have robust electron radiation belts at relativistic energies.In particular,Jupiter is thought to have caused at least 42 internal electrostatic discharge events during the Voyager 1 flyby.With the development of deep space exploration,there is an increased focus on the deep dielectric charging effects in the orbits of Jovian planets.In this paper,GEANT4,a Monte Carlo toolkit,and radiation-induced conductivity(RIC)are used to calculate deep dielectric charging effects for Jovian planets.The results are compared with the criteria for preventing deep dielectric charging effects in Earth orbit.The findings show that effective criteria used in Earth orbit are not always appropriate for preventing deep dielectric charging effects in Jovian orbits.Generally,Io,Europa,Saturn(R_S=6),Uranus(L=4.73)and Ganymede missions should have a thicker shield or higher dielectric conductivity,while Neptune(L=7.4)and Callisto missions can have a thinner shield thickness or a lower dielectric conductivity.Moreover,dielectrics grounded with double metal layers and thinner dielectrics can also decrease the likelihood of discharges.
基金supported by National Natural Science Foundation of China (No.10775037)Natural Science Foundation of Hebei Province of China (No.A2008000564) Natural Science Foundation of Hebei University 2008Q17, China
文摘Spatio-temporal distribution of individual filament in a square superlattice pattern, which consists of large and small spots （filaments）, is studied in atmospheric dielectric barrier discharges. The spatial distributions of the two discharges for individual large filament along the direction perpendicular to the electrode are estimated by the distributions of light signals along the electrode. It is found that the discharge at the rising edge of the applied voltage is with a wider column, weaker current, and longer current pulse duration in comparison with that at the falling edge
基金supported by the National Natural Science Foundation of China (Grant No. 41374181)the Beijing Municipal Natural Science Foundation (Grant No. 3184048)
文摘The deep dielectric charging effect monitor(DDCEM)has been designed to study the internal charging effect by measuring the charging currents and potentials inside the spacecraft.It is equipped on three Chinese navigation satellites in a circular medium earth orbit(MEO)with 22000 km average height and 55°inclinations.Numerical simulation based on the Geant4-RIC method was used to evaluate the data of DDCEM.The data during May to November 2019 on one of the three satellites show that the charging currents of DDCEM were negatively enhanced when the satellite moved into the outer radiation belt.The currents reached the negative maximum during a significant electron enhancement in September 2019.Positive currents were also detected besides negative currents that were caused by the deposition of electrons in the sensor.The causation of positive currents in the space environment may be that the low-energy electrons cannot penetrate the satellite skin and make it charging to negative potential,the reference ground of DDCEM that is connected to the satellite skin drops below zero by the low-energy electrons so that the output currents turn to positive.Ground experiment was used to simulate the causation of positive currents and the result verified our theory.
基金Project supported by the National Natural Science Foundation of China(Nos.51272202,61234006,61274079)
文摘The effect of the different re-oxidation annealing （ROA） processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance-voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 ℃ for 30 min, while a large num- ber of effective dielectric charges are generated. The components at the SiO2/SiC interface are analyzed by X-ray photoelectron spectroscopy （XPS） testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process.
基金supported by the National Natural Science Foundation of China(No.61504130)
文摘Output voltage drifting was observed in MEMS gyroscopes. Other than the quadrature error, frequency mismatch and quality factor, the dielectric parasitic charge was thought to be a major determinant. We studied the mechanism and variation of the parasitic charge in the MEMS gyroscopes, and analyzed the effect of the parasitic charge on the output stability. This phenomenon was extremely obvious in the Pyrex encapsulated MEMS gyroscopes. Due to the DC voltage required for the electrostatic actuation, the parasitic charge in the dielectric layer would accumulate and induce a residual voltage. This voltage had an impact on the resonant frequency of the gyroscopes, so as to affect the output stability. The theoretical studies were also confirmed by our experimental results. It was shown that the parasitic charge was harmful to the output stability of MEMS gyroscopes.
