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Discretely-supported nanoimprint lithography for patterning the high-spatial-frequency stepped surface 被引量:3
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作者 Chunhui Wang Yu Fan +4 位作者 Jinyou Shao Zhengjie Yang Jiaxing Sun Hongmiao Tian Xiangming Li 《Nano Research》 SCIE EI CSCD 2021年第8期2606-2612,共7页
Non-planar morphology is a common feature of devices applied in various physical fields,such as light or fluid,which pose a great challenge for surface nano-patterning to improve their performance.The present study pr... Non-planar morphology is a common feature of devices applied in various physical fields,such as light or fluid,which pose a great challenge for surface nano-patterning to improve their performance.The present study proposes a discretely-supported nanoimprint.lithography(NIL)technique to fabricate nanostructures on the extremely non-planar surface,namely high-spatial-frequency stepped surface.The designed discretely imprinting template implanted a discretely-supported intermediate buffer layer made of sparse pillars arrays.This allowed the simultaneous generation of air-cushion-like buffer and reliable support to the thin structured layer in the template.The resulting low bending stiffness and distributed concentrated load of the template jointly overcome the contact difficulty with a stepped surface,and enable the template to encase the stepped protrusion as tight as possible.Based on the proposed discretely-supported NIL,nanostructures were fabricated on the luminous interface of light emitting diodes chips that covered with micrometer step electrodes pad.About 96%of the utilized indium tin oxide transparent current spreading layer surface on top of the light emitting diode(LED)chips was coated with nanoholes array,with an increase by more than 40%in the optical output power.The excellent ability of nanopatterning a non-planar substrate could potentially lead innovate design and development of high performance device based on discretely-supported NIL. 展开更多
关键词 nanoimprint lithography non-planar surface discretely-supported template NANOPATTERNING semiconductor light emitting devices
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