The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with ...The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.展开更多
多路同步的高电压脉冲有广泛应用前景。为此,对基于可饱和脉冲变压器的多路同步技术路线进行了详细阐述,并开展了实验验证。在此基础之上,提出了多次级可饱和脉冲变压器多路同步控制的新型LC发生器。在该发生器中,可饱和脉冲变压器先后...多路同步的高电压脉冲有广泛应用前景。为此,对基于可饱和脉冲变压器的多路同步技术路线进行了详细阐述,并开展了实验验证。在此基础之上,提出了多次级可饱和脉冲变压器多路同步控制的新型LC发生器。在该发生器中,可饱和脉冲变压器先后承4重功能,极大地减小了系统的复杂程度。实验中,初级输入电压为910V时,输出电压幅值达到110 k V,系统总的升压倍数达121倍。此外,引入半导体断路开关,可使实验中输出脉冲的上升沿在20 ns以内。同时将半导体断路开关与电感储能型脉冲形成线相结合,提出了低阻抗方波脉冲的产生方案。研究结果表明:提出的技术方案确实可行,对脉冲功率技术向固态化、小型紧凑化以及可重复频率运行方向发展具有较大的探索意义。展开更多
基金National Natural Science Foundation of China(61974116)。
文摘The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.
文摘多路同步的高电压脉冲有广泛应用前景。为此,对基于可饱和脉冲变压器的多路同步技术路线进行了详细阐述,并开展了实验验证。在此基础之上,提出了多次级可饱和脉冲变压器多路同步控制的新型LC发生器。在该发生器中,可饱和脉冲变压器先后承4重功能,极大地减小了系统的复杂程度。实验中,初级输入电压为910V时,输出电压幅值达到110 k V,系统总的升压倍数达121倍。此外,引入半导体断路开关,可使实验中输出脉冲的上升沿在20 ns以内。同时将半导体断路开关与电感储能型脉冲形成线相结合,提出了低阻抗方波脉冲的产生方案。研究结果表明:提出的技术方案确实可行,对脉冲功率技术向固态化、小型紧凑化以及可重复频率运行方向发展具有较大的探索意义。
