This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bott...This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bottom 60-nm p-NiO layer fully covers theβ-Ga_(2)O_(3) wafer,while the geometry of the upper 60-nm p-NiO layer is 10μm larger than the square anode elec-trode.Compared with a single-layer JTE,the electric field concentration is inhibited by double-layer JTE structure effectively,resulting in the breakdown voltage being improved from 2020 to 2830 V.Moreover,double p-typed NiO layers allow more holes into the Ga_(2)O_(3) drift layer to reduce drift resistance.The specific on-resistance is reduced from 1.93 to 1.34 mΩ·cm^(2).The device with DL-JTE shows a power figure-of-merit(PFOM)of 5.98 GW/cm^(2),which is 2.8 times larger than that of the conven-tional single-layer JTE structure.These results indicate that the double-layer JTE structure provides a viable way of fabricating high-performance Ga_(2)O_(3) HJDs.展开更多
《Frontiers of Oral and Maxillofacial Medicine,口腔颌面医学前沿》(简称FOMM,ISSN 2664-777X FOMM,网址:https://fomm.amegroups.com)杂志由上海交通大学医学院附属第九人民医院、上海交通大学口腔医学院与AME出版社于2019年5月共...《Frontiers of Oral and Maxillofacial Medicine,口腔颌面医学前沿》(简称FOMM,ISSN 2664-777X FOMM,网址:https://fomm.amegroups.com)杂志由上海交通大学医学院附属第九人民医院、上海交通大学口腔医学院与AME出版社于2019年5月共同创办,是一本开放获取(open access)、经同行评审的国际口腔医学英文电子期刊.展开更多
《Frontiers of Oral and Maxillofacial Medicine,口腔颌面医学前沿》(简称FOMM,ISSN 2664-777X FOMM,网址:https://fomm.amegroups.com)杂志由上海交通大学医学院附属第九人民医院、上海交通大学口腔医学院与AME出版社于2019年5月共...《Frontiers of Oral and Maxillofacial Medicine,口腔颌面医学前沿》(简称FOMM,ISSN 2664-777X FOMM,网址:https://fomm.amegroups.com)杂志由上海交通大学医学院附属第九人民医院、上海交通大学口腔医学院与AME出版社于2019年5月共同创办,是一本开放获取(open access)、经同行评审的国际口腔医学英文电子期刊.展开更多
基金supported by the National Natural Science Foundation of China under Grant U21A20503.
文摘This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bottom 60-nm p-NiO layer fully covers theβ-Ga_(2)O_(3) wafer,while the geometry of the upper 60-nm p-NiO layer is 10μm larger than the square anode elec-trode.Compared with a single-layer JTE,the electric field concentration is inhibited by double-layer JTE structure effectively,resulting in the breakdown voltage being improved from 2020 to 2830 V.Moreover,double p-typed NiO layers allow more holes into the Ga_(2)O_(3) drift layer to reduce drift resistance.The specific on-resistance is reduced from 1.93 to 1.34 mΩ·cm^(2).The device with DL-JTE shows a power figure-of-merit(PFOM)of 5.98 GW/cm^(2),which is 2.8 times larger than that of the conven-tional single-layer JTE structure.These results indicate that the double-layer JTE structure provides a viable way of fabricating high-performance Ga_(2)O_(3) HJDs.
文摘《Frontiers of Oral and Maxillofacial Medicine,口腔颌面医学前沿》(简称FOMM,ISSN 2664-777X FOMM,网址:https://fomm.amegroups.com)杂志由上海交通大学医学院附属第九人民医院、上海交通大学口腔医学院与AME出版社于2019年5月共同创办,是一本开放获取(open access)、经同行评审的国际口腔医学英文电子期刊.
文摘《Frontiers of Oral and Maxillofacial Medicine,口腔颌面医学前沿》(简称FOMM,ISSN 2664-777X FOMM,网址:https://fomm.amegroups.com)杂志由上海交通大学医学院附属第九人民医院、上海交通大学口腔医学院与AME出版社于2019年5月共同创办,是一本开放获取(open access)、经同行评审的国际口腔医学英文电子期刊.
