Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhi...Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy(STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.展开更多
The soil chemistry of gallium, indium, and thallium is not well defined, particularly with emerging evidence that these elements have toxic properties and may influence food safety. The purpose of this investigation w...The soil chemistry of gallium, indium, and thallium is not well defined, particularly with emerging evidence that these elements have toxic properties and may influence food safety. The purpose of this investigation was to estimate the soil concentrations of gallium, indium, and thallium and determine if these elements have a soil chemistry like aluminum and therefore demonstrate significant concentration correlations with aluminum. Twenty-seven soil series were selected, and the elemental concentrations were determined using aqua regia digestion with analytical determination performed using inductively coupled plasma emission-mass spectroscopy. The concentrations of gallium, indium, and thallium generally compared with the known literature. Aluminum-gallium and aluminum-thallium exhibited significant concentration correlations across the soil horizons of the sampled soils. Aluminum, gallium, and thallium did demonstrate concentration increases in soil horizons having illuviation of phyllosilicates, implying these phyllosilicates have adsorption and isomorphic substitution behaviors involving these elements.展开更多
The anisotropic properties and applications ofβ-gallium oxide(β-Ga_(2)O_(3))are comprehensively reviewed.All the anisotropic properties are essentially resulted from the anisotropic crystal structure.The process flo...The anisotropic properties and applications ofβ-gallium oxide(β-Ga_(2)O_(3))are comprehensively reviewed.All the anisotropic properties are essentially resulted from the anisotropic crystal structure.The process flow of how to exfoliate nanoflakes from bulk material is introduced.Anisotropic optical properties,including optical bandgap,Raman and photolumines-cence characters are comprehensively reviewed.Three measurement configurations of angle-resolved polarized Raman spec-tra(ARPRS)are reviewed,with Raman intensity formulas calculated with Raman tensor elements.The method to obtain the Raman tensor elements of phonon modes through experimental fitting is also introduced.In addition,the anisotropy in elec-tron mobility and affinity are discussed.The applications,especially polarization photodetectors,based onβ-Ga_(2)O_(3)were summa-rized comprehensively.Three kinds of polarization detection mechanisms based on material dichroism,1D morphology and metal-grids are discussed in-depth.This review paper provides a framework for anisotropic optical and electric properties ofβ-Ga_(2)O_(3),as well as the applications based on these characters,and is expected to lead to a wider discussion on this topic.展开更多
In the era of accelerated development in artificial intelligence as well as explosive growth of information and data throughput,underlying hardware devices that can integrate perception and memory while simultaneously...In the era of accelerated development in artificial intelligence as well as explosive growth of information and data throughput,underlying hardware devices that can integrate perception and memory while simultaneously offering the bene-fits of low power consumption and high transmission rates are particularly valuable.Neuromorphic devices inspired by the human brain are considered to be one of the most promising successors to the efficient in-sensory process.In this paper,a homojunction-based multi-functional optoelectronic synapse(MFOS)is proposed and testified.It enables a series of basic electri-cal synaptic plasticity,including paired-pulse facilitation/depression(PPF/PPD)and long-term promotion/depression(LTP/LTD).In addition,the synaptic behaviors induced by electrical signals could be instead achieved through optical signals,where its sen-sitivity to optical frequency allows the MFOS to simulate high-pass filtering applications in situ and the perception capability integrated into memory endows it with the information acquisition and processing functions as a visual system.Meanwhile,the MFOS exhibits its performances of associative learning and logic gates following the illumination with two different wave-lengths.As a result,the proposed MFOS offers a solution for the realization of intelligent visual system and bionic electronic eye,and will provide more diverse application scenarios for future neuromorphic computing.展开更多
Liquid metal gallium has been widely used in numerous fields, from nuclear engineering, catalysts, and energy storage to electronics owing to its remarkable thermal and electrical properties along with low viscosity a...Liquid metal gallium has been widely used in numerous fields, from nuclear engineering, catalysts, and energy storage to electronics owing to its remarkable thermal and electrical properties along with low viscosity and nontoxicity. Compared with high-temperature liquid metals, room-temperature liquid metals, such as gallium(Ga), are emerging as promising alternatives for fabricating advanced energy storage devices, such as phase change materials, by harvesting the advantageous properties of their liquid state maintained without external energy input. However, the thermal and electrical properties of liquid metals at the phase transition are rather poorly studied, limiting their practical applications. In this study, we reported on the physical properties of the solid–liquid phase transition of Ga using a custom-designed, solid–liquid electrical and thermal measurement system. We observed that the electrical conductivity of Ga progressively decreases with an increase in temperature. However, the Seebeck coefficient of Ga increases from 0.2 to 2.1 μV/K, and thermal conductivity from 7.6 to 33 W/(K·m). These electrical and thermal properties of Ga at solid–liquid phase transition would be useful for practical applications.展开更多
With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material para...With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material parameters in the material library,and the SBD turn-on and breakdown behavior are simulated.The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than Ga N SBD.Also,to solve the lattice mismatch problem in the real epitaxy,we add a Zn O layer as a transition layer.The simulations show that the device still has good properties after adding this layer.展开更多
The complexation of gallium with 2-hydroxy-5-T-butylphenol-4’-methoxy-azobenzene (HR) has been studied by atomic absorption and spectrophotometric methods. The optimal conditions for the formation and extraction of t...The complexation of gallium with 2-hydroxy-5-T-butylphenol-4’-methoxy-azobenzene (HR) has been studied by atomic absorption and spectrophotometric methods. The optimal conditions for the formation and extraction of the complex were found. The maximum light absorption of the complex in n-butanol is in the range of 450 - 470 nm. The molar absorption coefficient is (3.3 - 4.2)<span style="white-space:nowrap;"><span style="white-space:nowrap;">⋅</span></span>10<sup>4</sup>. The stability constant of the gallium coordination compound in n-butanol is <em>β</em><sub>l</sub> = 4.2<span style="white-space:nowrap;"><span style="white-space:nowrap;">⋅</span></span>10<sup>10</sup>. The developed technique allows to determine the gallium content within n × 10<sup><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span>1</sup> - n × 10<sup><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span>4</sup>%. The selective and sensitive technique for the extraction-atomic absorption determination of gallium in soils has been developed.展开更多
Until very recently, gallium oxide(Ga_2O_3) has aroused more and more interests in the area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field of 8 MV/cm and decent intrinsic e...Until very recently, gallium oxide(Ga_2O_3) has aroused more and more interests in the area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field of 8 MV/cm and decent intrinsic electron mobility limit of250 cm2/(V·s), yielding a high Baliga's figures-of-merit(FOM) of more than 3000, which is several times higher than GaN and SiC.In addition to its excellent material properties, potential low-cost and large size substrate through melt-grown methodology also endows β-Ga_2O_3 more potential for future low-cost power devices. This article focuses on reviewing the most recent advances ofβ-Ga_2O_3 based power devices. It will be starting with a brief introduction to the material properties of β-Ga_2O_3 and then the growth techniques of its native substrate, followed by the thin film epitaxial growth. The performance of state-of-art β-Ga_2O_3 devices, including diodes and FETs are fully discussed and compared. Finally, potential solutions to the challenges of β-Ga_2O_3 are also discussed and explored.展开更多
Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and ...Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.展开更多
Due to the remarkable growth rate compared to another growth methods for gallium nitride(GaN)growth,hydride vapor phase epitaxy(HVPE)is now the only method for mass product GaN substrates.In this review,commercial HVP...Due to the remarkable growth rate compared to another growth methods for gallium nitride(GaN)growth,hydride vapor phase epitaxy(HVPE)is now the only method for mass product GaN substrates.In this review,commercial HVPE systems and the GaN crystals grown by them are demonstrated.This article also illustrates some innovative attempts to develop homebuilt HVPE systems.Finally,the prospects for the further development of HVPE for GaN crystal growth in the future are also discussed.展开更多
Zinc concentrate with high gallium content is one of the main resources of gallium.The gallium presents in the form of isomorphism in tetrahedron coordination with sulfur in sphalerite.The research was to investigate ...Zinc concentrate with high gallium content is one of the main resources of gallium.The gallium presents in the form of isomorphism in tetrahedron coordination with sulfur in sphalerite.The research was to investigate the amenability of zinc concentrate with high gallium to pressure oxygen leaching.The particle size,sulfuric acid concentration,oxygen partial pressure,additive amount,and time of reaction were studied.The extraction yields of gallium and zinc are 86%and 98%,respectively.The optimal condition is 100 g of zinc concentrate with particle size smaller than 38 lm,sulfuric acid concentration150 g L-1,leaching temperature 150℃,leaching time120 min,oxygen partial pressure 0.7 MPa,additive amount of 0.2 wt%.展开更多
Tetrahydrofuran ring can be opened with acyl chlorides or anhydrides catalyzed by gallium triiodides to afford iodo esters under mild conditions in good yields.
Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, an...Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga_2O_3 is regarded as the most promising candidate for UV detection.Furthermore, the bandgap of Ga_2O_3 is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga_2O_3 to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga_2O_3 photodetectors based on single crystal or amorphous Ga_2O_3 are mainly focused on metal–semiconductor–metal and Schottky photodiodes.In this work, the recent achievements of Ga_2O_3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga_2O_3 and amorphous Ga_2O_3 thin film are analyzed and compared. Finally, the prospects of Ga_2O_3 UV photodetectors are forecast.展开更多
Gallium oxide, as a new type of ultra-wide bandgap semiconductor, is expected to be used in power electronics and solar blind UV photodetectors. The main cause of research and development onβ-Ga2O3 is inspired by its...Gallium oxide, as a new type of ultra-wide bandgap semiconductor, is expected to be used in power electronics and solar blind UV photodetectors. The main cause of research and development onβ-Ga2O3 is inspired by its larger bandgap, higher breakdown field, bigger Baliga figure-of-merit (FOM), shorter absorption edge and lower cost compared to the third-generation semiconductors, such as SiC and GaN.展开更多
Selective separation of gallium from aluminum by ion flotation using sodium dodecyl sulfate(SDS) as an anionic surfactant and fluoride as an inorganic ligand was investigated. The experimental results were analyzed us...Selective separation of gallium from aluminum by ion flotation using sodium dodecyl sulfate(SDS) as an anionic surfactant and fluoride as an inorganic ligand was investigated. The experimental results were analyzed using the stability constants and speciation diagrams of fluoride metal complexes. The presence of fluoride in the solution has a positive influence upon the separation of gallium from aluminum. The results show that increasing the fluoride concentration makes a more effective separation of gallium from aluminum because of a simultaneous increase in the complexion of aluminum with fluoride and a change in the electrical charge of the aluminum(ALF_4^-). The dehydration model of LIU and DOYLE was also applied to compare the ion flotation and the selectivity coefficients of gallium over aluminum with experimental results.展开更多
Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequenc...Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment increased.Transmittance of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported.展开更多
The aim of this work was to obtain an experimental magnesium alloy by remelting standard AZ63A alloy with addition of gallium ligatures and ZrO_(2) particles.This allowed reinforcement of alloy and increase its hardne...The aim of this work was to obtain an experimental magnesium alloy by remelting standard AZ63A alloy with addition of gallium ligatures and ZrO_(2) particles.This allowed reinforcement of alloy and increase its hardness and Young’s modulus.The chemical analysis of this alloy shows two types of structures which are evenly distributed in volume.Thus we can conclude that reinforcing effect is the result of formation of intermetallic phase Mg_(5)-Ga_(2).展开更多
In recent years magnesium alloys have been studied intensively with a view to their potential use in bioresorbable medical implants.In the present work the microstructure and the corrosion properties of a new bioresor...In recent years magnesium alloys have been studied intensively with a view to their potential use in bioresorbable medical implants.In the present work the microstructure and the corrosion properties of a new bioresorbable Mg-4 wt%Ga-4 wt%Zn alloy and its variants with low Ca,Nd or Y additions were investigated.These alloys are of interest due to the efficacy of gallium as an element inhibiting bone resorption,osteoporosis,Paget's disease,and other illnesses.A severe plastic deformation technique of equal channel angular pressing(ECAP)was shown to provide the alloys with favorable mechanical properties.In addition,a desirable low rate of degradation in a simulated body fluid(Hanks'solution)was achieved.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.11874304 and 11574253)。
文摘Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy(STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.
文摘The soil chemistry of gallium, indium, and thallium is not well defined, particularly with emerging evidence that these elements have toxic properties and may influence food safety. The purpose of this investigation was to estimate the soil concentrations of gallium, indium, and thallium and determine if these elements have a soil chemistry like aluminum and therefore demonstrate significant concentration correlations with aluminum. Twenty-seven soil series were selected, and the elemental concentrations were determined using aqua regia digestion with analytical determination performed using inductively coupled plasma emission-mass spectroscopy. The concentrations of gallium, indium, and thallium generally compared with the known literature. Aluminum-gallium and aluminum-thallium exhibited significant concentration correlations across the soil horizons of the sampled soils. Aluminum, gallium, and thallium did demonstrate concentration increases in soil horizons having illuviation of phyllosilicates, implying these phyllosilicates have adsorption and isomorphic substitution behaviors involving these elements.
基金supported by the National Natural Science Foundation of China(Grant No.61505109)Youth Innovative Talents Attracting and Cultivating Plan of Colleges and Universities in Shandong Province(No.21)+1 种基金Youth Innovation Team of colleges and universities in Shandong Province(Grant No.2022KJ223)Shandong Provincial Natural Science Foundation(Grant No.ZR2021QF020).
文摘The anisotropic properties and applications ofβ-gallium oxide(β-Ga_(2)O_(3))are comprehensively reviewed.All the anisotropic properties are essentially resulted from the anisotropic crystal structure.The process flow of how to exfoliate nanoflakes from bulk material is introduced.Anisotropic optical properties,including optical bandgap,Raman and photolumines-cence characters are comprehensively reviewed.Three measurement configurations of angle-resolved polarized Raman spec-tra(ARPRS)are reviewed,with Raman intensity formulas calculated with Raman tensor elements.The method to obtain the Raman tensor elements of phonon modes through experimental fitting is also introduced.In addition,the anisotropy in elec-tron mobility and affinity are discussed.The applications,especially polarization photodetectors,based onβ-Ga_(2)O_(3)were summa-rized comprehensively.Three kinds of polarization detection mechanisms based on material dichroism,1D morphology and metal-grids are discussed in-depth.This review paper provides a framework for anisotropic optical and electric properties ofβ-Ga_(2)O_(3),as well as the applications based on these characters,and is expected to lead to a wider discussion on this topic.
基金supported by the National Natural Science Foundation of China under Grant(62174068,61625404).
文摘In the era of accelerated development in artificial intelligence as well as explosive growth of information and data throughput,underlying hardware devices that can integrate perception and memory while simultaneously offering the bene-fits of low power consumption and high transmission rates are particularly valuable.Neuromorphic devices inspired by the human brain are considered to be one of the most promising successors to the efficient in-sensory process.In this paper,a homojunction-based multi-functional optoelectronic synapse(MFOS)is proposed and testified.It enables a series of basic electri-cal synaptic plasticity,including paired-pulse facilitation/depression(PPF/PPD)and long-term promotion/depression(LTP/LTD).In addition,the synaptic behaviors induced by electrical signals could be instead achieved through optical signals,where its sen-sitivity to optical frequency allows the MFOS to simulate high-pass filtering applications in situ and the perception capability integrated into memory endows it with the information acquisition and processing functions as a visual system.Meanwhile,the MFOS exhibits its performances of associative learning and logic gates following the illumination with two different wave-lengths.As a result,the proposed MFOS offers a solution for the realization of intelligent visual system and bionic electronic eye,and will provide more diverse application scenarios for future neuromorphic computing.
基金the support provided by A*STAR and the Industry Alignment Fund through the Pharos “Hybrid thermoelectric materials for ambient applications” Program (No.1527200021)。
文摘Liquid metal gallium has been widely used in numerous fields, from nuclear engineering, catalysts, and energy storage to electronics owing to its remarkable thermal and electrical properties along with low viscosity and nontoxicity. Compared with high-temperature liquid metals, room-temperature liquid metals, such as gallium(Ga), are emerging as promising alternatives for fabricating advanced energy storage devices, such as phase change materials, by harvesting the advantageous properties of their liquid state maintained without external energy input. However, the thermal and electrical properties of liquid metals at the phase transition are rather poorly studied, limiting their practical applications. In this study, we reported on the physical properties of the solid–liquid phase transition of Ga using a custom-designed, solid–liquid electrical and thermal measurement system. We observed that the electrical conductivity of Ga progressively decreases with an increase in temperature. However, the Seebeck coefficient of Ga increases from 0.2 to 2.1 μV/K, and thermal conductivity from 7.6 to 33 W/(K·m). These electrical and thermal properties of Ga at solid–liquid phase transition would be useful for practical applications.
文摘With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material parameters in the material library,and the SBD turn-on and breakdown behavior are simulated.The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than Ga N SBD.Also,to solve the lattice mismatch problem in the real epitaxy,we add a Zn O layer as a transition layer.The simulations show that the device still has good properties after adding this layer.
文摘The complexation of gallium with 2-hydroxy-5-T-butylphenol-4’-methoxy-azobenzene (HR) has been studied by atomic absorption and spectrophotometric methods. The optimal conditions for the formation and extraction of the complex were found. The maximum light absorption of the complex in n-butanol is in the range of 450 - 470 nm. The molar absorption coefficient is (3.3 - 4.2)<span style="white-space:nowrap;"><span style="white-space:nowrap;">⋅</span></span>10<sup>4</sup>. The stability constant of the gallium coordination compound in n-butanol is <em>β</em><sub>l</sub> = 4.2<span style="white-space:nowrap;"><span style="white-space:nowrap;">⋅</span></span>10<sup>10</sup>. The developed technique allows to determine the gallium content within n × 10<sup><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span>1</sup> - n × 10<sup><span style="white-space:nowrap;"><span style="white-space:nowrap;">−</span></span>4</sup>%. The selective and sensitive technique for the extraction-atomic absorption determination of gallium in soils has been developed.
文摘Until very recently, gallium oxide(Ga_2O_3) has aroused more and more interests in the area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field of 8 MV/cm and decent intrinsic electron mobility limit of250 cm2/(V·s), yielding a high Baliga's figures-of-merit(FOM) of more than 3000, which is several times higher than GaN and SiC.In addition to its excellent material properties, potential low-cost and large size substrate through melt-grown methodology also endows β-Ga_2O_3 more potential for future low-cost power devices. This article focuses on reviewing the most recent advances ofβ-Ga_2O_3 based power devices. It will be starting with a brief introduction to the material properties of β-Ga_2O_3 and then the growth techniques of its native substrate, followed by the thin film epitaxial growth. The performance of state-of-art β-Ga_2O_3 devices, including diodes and FETs are fully discussed and compared. Finally, potential solutions to the challenges of β-Ga_2O_3 are also discussed and explored.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241)the Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
文摘Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.
基金supported by the National Key Research and Development Plan (No. 2017YFB0404201)the National Science Foundation of China (Nos. 61774147, 61874108)
文摘Due to the remarkable growth rate compared to another growth methods for gallium nitride(GaN)growth,hydride vapor phase epitaxy(HVPE)is now the only method for mass product GaN substrates.In this review,commercial HVPE systems and the GaN crystals grown by them are demonstrated.This article also illustrates some innovative attempts to develop homebuilt HVPE systems.Finally,the prospects for the further development of HVPE for GaN crystal growth in the future are also discussed.
基金supported by the National Basic Research Program of China (No. 2010CB630905)
文摘Zinc concentrate with high gallium content is one of the main resources of gallium.The gallium presents in the form of isomorphism in tetrahedron coordination with sulfur in sphalerite.The research was to investigate the amenability of zinc concentrate with high gallium to pressure oxygen leaching.The particle size,sulfuric acid concentration,oxygen partial pressure,additive amount,and time of reaction were studied.The extraction yields of gallium and zinc are 86%and 98%,respectively.The optimal condition is 100 g of zinc concentrate with particle size smaller than 38 lm,sulfuric acid concentration150 g L-1,leaching temperature 150℃,leaching time120 min,oxygen partial pressure 0.7 MPa,additive amount of 0.2 wt%.
基金the National Natural Science Foundation of China !298720I0the NSF of she-hang Provincethe Laboratory of Organometallic Ch
文摘Tetrahydrofuran ring can be opened with acyl chlorides or anhydrides catalyzed by gallium triiodides to afford iodo esters under mild conditions in good yields.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61521064,61522408,61574169,61334007,61474136,and 61574166)the Ministry of Science and Technology of China(Grant Nos.2018YFB0406504,2016YFA0201803,2016YFA0203800,and 2017YFB0405603)+1 种基金the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Grant Nos.QYZDB-SSW-JSC048 and QYZDY-SSW-JSC001)the Beijing Municipal Science and Technology Project,China(Grant No.Z171100002017011)
文摘Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga_2O_3 is regarded as the most promising candidate for UV detection.Furthermore, the bandgap of Ga_2O_3 is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga_2O_3 to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga_2O_3 photodetectors based on single crystal or amorphous Ga_2O_3 are mainly focused on metal–semiconductor–metal and Schottky photodiodes.In this work, the recent achievements of Ga_2O_3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga_2O_3 and amorphous Ga_2O_3 thin film are analyzed and compared. Finally, the prospects of Ga_2O_3 UV photodetectors are forecast.
文摘Gallium oxide, as a new type of ultra-wide bandgap semiconductor, is expected to be used in power electronics and solar blind UV photodetectors. The main cause of research and development onβ-Ga2O3 is inspired by its larger bandgap, higher breakdown field, bigger Baliga figure-of-merit (FOM), shorter absorption edge and lower cost compared to the third-generation semiconductors, such as SiC and GaN.
基金the Iran National Elites FoundationIranian Mines&Mining Industries Development&the Renovation and Geological Survey of Iran for financial support
文摘Selective separation of gallium from aluminum by ion flotation using sodium dodecyl sulfate(SDS) as an anionic surfactant and fluoride as an inorganic ligand was investigated. The experimental results were analyzed using the stability constants and speciation diagrams of fluoride metal complexes. The presence of fluoride in the solution has a positive influence upon the separation of gallium from aluminum. The results show that increasing the fluoride concentration makes a more effective separation of gallium from aluminum because of a simultaneous increase in the complexion of aluminum with fluoride and a change in the electrical charge of the aluminum(ALF_4^-). The dehydration model of LIU and DOYLE was also applied to compare the ion flotation and the selectivity coefficients of gallium over aluminum with experimental results.
基金partially supported by the Scientific Research (No. 16K06268)the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan
文摘Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment increased.Transmittance of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported.
基金the program“Research and development of arc welding and solid-state welding technologies for airspace,on-ground and floating high-speed vehicles”of the National Academy of Sciences of Ukraine(2012–2015)R&D project for young scientist of Paton Welding Institute of NASU(2014–2015).
文摘The aim of this work was to obtain an experimental magnesium alloy by remelting standard AZ63A alloy with addition of gallium ligatures and ZrO_(2) particles.This allowed reinforcement of alloy and increase its hardness and Young’s modulus.The chemical analysis of this alloy shows two types of structures which are evenly distributed in volume.Thus we can conclude that reinforcing effect is the result of formation of intermetallic phase Mg_(5)-Ga_(2).
基金The authors gratefully acknowledge financial support from the Ministry of Science and Higher Education of the Russian Federation under the Increasing Competitiveness Program of NUST"MISiS"(No.K2-2019-008)implemented according to the governmental decree N 211 dated 16 March 2013.
文摘In recent years magnesium alloys have been studied intensively with a view to their potential use in bioresorbable medical implants.In the present work the microstructure and the corrosion properties of a new bioresorbable Mg-4 wt%Ga-4 wt%Zn alloy and its variants with low Ca,Nd or Y additions were investigated.These alloys are of interest due to the efficacy of gallium as an element inhibiting bone resorption,osteoporosis,Paget's disease,and other illnesses.A severe plastic deformation technique of equal channel angular pressing(ECAP)was shown to provide the alloys with favorable mechanical properties.In addition,a desirable low rate of degradation in a simulated body fluid(Hanks'solution)was achieved.
