Gallium oxide, as a new type of ultra-wide bandgap semiconductor, is expected to be used in power electronics and solar blind UV photodetectors. The main cause of research and development onβ-Ga2O3 is inspired by its...Gallium oxide, as a new type of ultra-wide bandgap semiconductor, is expected to be used in power electronics and solar blind UV photodetectors. The main cause of research and development onβ-Ga2O3 is inspired by its larger bandgap, higher breakdown field, bigger Baliga figure-of-merit (FOM), shorter absorption edge and lower cost compared to the third-generation semiconductors, such as SiC and GaN.展开更多
The oxidation behavior of a novel Ni-based single-crystal 4774DD1 superalloy for industrial gas turbine applications was investigated by the isothermal oxidation at 980℃ and discontinuous oxidation weight gain method...The oxidation behavior of a novel Ni-based single-crystal 4774DD1 superalloy for industrial gas turbine applications was investigated by the isothermal oxidation at 980℃ and discontinuous oxidation weight gain methods.The phase constitution and morphology of surface oxides and the characteristics of the crosssection oxide film were analyzed by XRD,SEM and EDS.Results show that the oxidation kinetics of the 4774DD1 superalloy follows the cubic law,indicating its weak oxidation resistance at this temperature.As the oxidation time increases,the composition of the oxide film evolves as following:One layer consisting of a bottom Al_(2)O_(3)sublayer and an upper(Al_(2)O_(3)+NiO)mixture sublayer after oxidized for 25 h.Then,two layers composed of an outermost small NiO discontinuous grain layer and an internal layer for 75 h.This internal layer is consisted of the bottom Al_(2)O_(3)sublayer,an intermediate narrow CrTaO_(4)sublayer,and an upper(Al_(2)O_(3)+NiO)mixture sublayer.Also two layers comprising an outermost relative continuous NiO layer with large grain size and an internal layer as the oxidation time increases to 125 h.This internal layer is composed of the upper(Al_(2)O_(3)+NiO)mixture sublayer,an intermediate continuous(CrTaO_(4)+NiWO_(4))mixture sublayer,and a bottom Al_(2)O_(3)sublayer.Finally,three layers consisting of an outermost(NiAl2O_(4)+NiCr2O_(4))mixture layer,an intermediate(CrTaO_(4)+NiWO_(4))mixture layer,and a bottom Al_(2)O_(3)layer for 200 h.展开更多
The magnetic properties of single crystals Si,Sr Ti O_(3),La Al O_(3),Mg O,and(La,Sr)(Al,Ta)O_(3)were investigated systematically.Three origins of the magnetizations of these crystals,namely,an intrinsic diamagnetic,a...The magnetic properties of single crystals Si,Sr Ti O_(3),La Al O_(3),Mg O,and(La,Sr)(Al,Ta)O_(3)were investigated systematically.Three origins of the magnetizations of these crystals,namely,an intrinsic diamagnetic,a paramagnetic,and a ferromagnetic contribution,have been found to influence the magnetic signals measured on the crystals,in some important application scenarios such crystals being served as substrates with the magnetic thin film epitaxially grown on.Quantitative analyses methodologies were developed and thorough investigations were performed on the crystals with the intrinsic materials parameters thus revealed,especially that the intrinsic diamagnetic susceptibility differential dχdia/d T were identified quantitatively for the first time in Sr Ti O_(3),La Al O_(3),Mg O,and(La,Sr)(Al,Ta)O_(3).The paramagnetic contribution is found to be the key in terms of the magnetic properties of the crystals,which in turn is in fact a consequence of the 3d impurities doping inside the crystal.All the intrinsic materials parameters are given in this paper as datasets,the datasets are openly available at https://www.doi.org/10.57760/sciencedb.j00113.00028.展开更多
ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown b...ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.展开更多
Kinetics of oxygen adsorption on single crystal Mn<sub>5</sub>Si<sub>3</sub> （111） surface and initial surface oxidation were investigated. Oxygen chemisorbs dissociatively at room temperatur...Kinetics of oxygen adsorption on single crystal Mn<sub>5</sub>Si<sub>3</sub> （111） surface and initial surface oxidation were investigated. Oxygen chemisorbs dissociatively at room temperature on Mn and Si atoms. A fast oxidation of Si atoms occurs followed by oxidation of Mn atoms at RT. The MnO<sub>2</sub> was reduced by Si atoms and the SiO was oxidized further to SiO<sub>2</sub> during the sample heating.展开更多
High-quality single crystals of A-site ordered perovskite oxides CaCu3Ru4O12 were synthesized by flux method with Cu O serving as a flux. The typical size of these single crystals was around 1 × 1 × 1 mm3 an...High-quality single crystals of A-site ordered perovskite oxides CaCu3Ru4O12 were synthesized by flux method with Cu O serving as a flux. The typical size of these single crystals was around 1 × 1 × 1 mm3 and the lattice constant was determined to be 7.430 ± 0.0009 ?A by using x-ray single crystal diffraction. The surfaces of the samples were identified to be(100) surface. The high quality of the single crystal samples was confirmed by the rocking curve data which have a full width at half maximum of approximately 0.02 degree. The x-ray photoelectron spectroscopy measurement was performed and the temperature-dependent specific heat, magnetic susceptibility, and electric resistivity were measured along the [100]direction of the single crystals. All these measurements showed that the physical properties of Ca Cu3Ru4O12 single crystals are similar to that of polycrystals. However, the single crystals have a lower Curie susceptibility tail and a smaller residual resistivity than polycrystals, which indicates that the amount of paramagnetic impurities can be controlled by tuning the number of defects in CaCu3Ru4O12 samples.展开更多
The oxidation behavior of the single crystal Ni-based superalloy TMS-82+ was studied under cyclic condition at 900 and 1 000 ℃ for 200 h in air. The oxidation kinetics for the superalloy at both exposure temperatures...The oxidation behavior of the single crystal Ni-based superalloy TMS-82+ was studied under cyclic condition at 900 and 1 000 ℃ for 200 h in air. The oxidation kinetics for the superalloy at both exposure temperatures was explained by the subparabolic relationship. The results show that increasing the exposure temperature from 900 to 1 000 ℃,the amounts of α-Al2O3,(Ni,Co)Al2O4 and NiCr2O4 increase,resulting in a higher mass gain. The oxides consist of(Ni,Co)O,CrTaO4,AlTaO4,Cr2O3,θ-,-α-Al2O3 and(Ni,Co)Al2O4 in the specimen at 900 ℃,but NiCr2O4 spinel forms for the specimen exposed at 1 000 ℃ except the above mentioned oxides. A continuous α-Al2O3 layer is responsible for a slow growth rate of the scale after an initial rapid oxidation of NiO.展开更多
A commercial epi-ready(201)β-Ga_(2)O_(3) wafer was investigated upon diamond sawing into pieces measuring 2.5×3 mm^(2).The defect structure and crystallinity in the cut samples has been studied by X-ray diffract...A commercial epi-ready(201)β-Ga_(2)O_(3) wafer was investigated upon diamond sawing into pieces measuring 2.5×3 mm^(2).The defect structure and crystallinity in the cut samples has been studied by X-ray diffraction and a selective wet etching technique.The density of defects was estimated from the average value of etch pits calculated,including near-edge regions,and was obtained close to 109 cm^(-2).Blocks with lattice orientation deviated by angles of 1-3 arcmin,as well as non-stoichiometric fractions with a relative strain about(1.0-1.5)×10^(-4)in the[201]direction,were found.Crystal perfection was shown to decrease significantly towards the cutting lines of the samples.To reduce the number of structural defects and increase the crystal perfection of the samples via increasing defect motion mobility,the thermal annealing was employed.Polygonization and formation of a mosaic structure coupled with dislocation wall appearance upon 3 h of annealing at 1100℃ was observed.The fractions characterized by non-stoichiometry phases and the block deviation disappeared.The annealing for 11 h improved the homogeneity and perfection in the crystals.The average density of the etch pits dropped down significantly to 8×10^(6) cm^(-2).展开更多
Metal oxide mesocrystals(MCs)and mesoporous single crystals(MSCs)exhibit superior carrier transport ability,high specific surface area,shortened photo-carrier diffusion lengths to interfaces and enhanced absorbance of...Metal oxide mesocrystals(MCs)and mesoporous single crystals(MSCs)exhibit superior carrier transport ability,high specific surface area,shortened photo-carrier diffusion lengths to interfaces and enhanced absorbance of the incident sunlight.These advanced features make metal oxide MCs and MSCs be a promising candidate material in photocatalysis,photoelectrocatalysis,dye sensitized solar cells(DSSCs)and perovskite solar cells(PSCs).Recently,remarkable advances of applying metal oxide MCs and MSCs in these areas have been achieved.Therefore,it is extremely important to deeply understand the influence of the unique properties of metal oxide MCs and MSCs on solar energy conversion systems.Herein,we presented a brief introduction on the synthesis and carrier transfer behavior of metal oxide MCs and MSCs.Then,the rational structure design and modification of metal oxide MCs and MSCs for photocatalysis,photoelectrocatalysis,DSSCs and PSCs are systematically discussed.Finally,the perspectives on extending the application of metal oxide MCs and MSCs are addressed.展开更多
文摘Gallium oxide, as a new type of ultra-wide bandgap semiconductor, is expected to be used in power electronics and solar blind UV photodetectors. The main cause of research and development onβ-Ga2O3 is inspired by its larger bandgap, higher breakdown field, bigger Baliga figure-of-merit (FOM), shorter absorption edge and lower cost compared to the third-generation semiconductors, such as SiC and GaN.
基金supported by the fund of State Key Laboratory of Long-life High Temperature Materials(Grant No.DTCC28EE200787)the Natural Science Basic Research Plan in Shaanxi Province of China(Grant No.2022JQ-553)+3 种基金the China Postdoctoral Science Foundation(Grant No.2021M692555)the Excellent Youth Foundation of Shaanxi Province of China(Grant No.2021JC-08)the Beilin district of Xi’an Science and Technology Project(Grant No.GX2123)the support from the Youth Innovation Team of Shaanxi Universities。
文摘The oxidation behavior of a novel Ni-based single-crystal 4774DD1 superalloy for industrial gas turbine applications was investigated by the isothermal oxidation at 980℃ and discontinuous oxidation weight gain methods.The phase constitution and morphology of surface oxides and the characteristics of the crosssection oxide film were analyzed by XRD,SEM and EDS.Results show that the oxidation kinetics of the 4774DD1 superalloy follows the cubic law,indicating its weak oxidation resistance at this temperature.As the oxidation time increases,the composition of the oxide film evolves as following:One layer consisting of a bottom Al_(2)O_(3)sublayer and an upper(Al_(2)O_(3)+NiO)mixture sublayer after oxidized for 25 h.Then,two layers composed of an outermost small NiO discontinuous grain layer and an internal layer for 75 h.This internal layer is consisted of the bottom Al_(2)O_(3)sublayer,an intermediate narrow CrTaO_(4)sublayer,and an upper(Al_(2)O_(3)+NiO)mixture sublayer.Also two layers comprising an outermost relative continuous NiO layer with large grain size and an internal layer as the oxidation time increases to 125 h.This internal layer is composed of the upper(Al_(2)O_(3)+NiO)mixture sublayer,an intermediate continuous(CrTaO_(4)+NiWO_(4))mixture sublayer,and a bottom Al_(2)O_(3)sublayer.Finally,three layers consisting of an outermost(NiAl2O_(4)+NiCr2O_(4))mixture layer,an intermediate(CrTaO_(4)+NiWO_(4))mixture layer,and a bottom Al_(2)O_(3)layer for 200 h.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61974161 and 11474324)。
文摘The magnetic properties of single crystals Si,Sr Ti O_(3),La Al O_(3),Mg O,and(La,Sr)(Al,Ta)O_(3)were investigated systematically.Three origins of the magnetizations of these crystals,namely,an intrinsic diamagnetic,a paramagnetic,and a ferromagnetic contribution,have been found to influence the magnetic signals measured on the crystals,in some important application scenarios such crystals being served as substrates with the magnetic thin film epitaxially grown on.Quantitative analyses methodologies were developed and thorough investigations were performed on the crystals with the intrinsic materials parameters thus revealed,especially that the intrinsic diamagnetic susceptibility differential dχdia/d T were identified quantitatively for the first time in Sr Ti O_(3),La Al O_(3),Mg O,and(La,Sr)(Al,Ta)O_(3).The paramagnetic contribution is found to be the key in terms of the magnetic properties of the crystals,which in turn is in fact a consequence of the 3d impurities doping inside the crystal.All the intrinsic materials parameters are given in this paper as datasets,the datasets are openly available at https://www.doi.org/10.57760/sciencedb.j00113.00028.
文摘ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.
文摘Kinetics of oxygen adsorption on single crystal Mn<sub>5</sub>Si<sub>3</sub> （111） surface and initial surface oxidation were investigated. Oxygen chemisorbs dissociatively at room temperature on Mn and Si atoms. A fast oxidation of Si atoms occurs followed by oxidation of Mn atoms at RT. The MnO<sub>2</sub> was reduced by Si atoms and the SiO was oxidized further to SiO<sub>2</sub> during the sample heating.
基金Project supported by the National Basic Research Program of China(Grant No.2012CB821404)the National Natural Science Foundation of China(Grant Nos.51172166 and 61106005)+1 种基金the National Science Fund for Talent Training in Basic Science of China(Grant No.J1210061)the Doctoral Fund of Ministry of Education of China(Grant No.20110141110007)
文摘High-quality single crystals of A-site ordered perovskite oxides CaCu3Ru4O12 were synthesized by flux method with Cu O serving as a flux. The typical size of these single crystals was around 1 × 1 × 1 mm3 and the lattice constant was determined to be 7.430 ± 0.0009 ?A by using x-ray single crystal diffraction. The surfaces of the samples were identified to be(100) surface. The high quality of the single crystal samples was confirmed by the rocking curve data which have a full width at half maximum of approximately 0.02 degree. The x-ray photoelectron spectroscopy measurement was performed and the temperature-dependent specific heat, magnetic susceptibility, and electric resistivity were measured along the [100]direction of the single crystals. All these measurements showed that the physical properties of Ca Cu3Ru4O12 single crystals are similar to that of polycrystals. However, the single crystals have a lower Curie susceptibility tail and a smaller residual resistivity than polycrystals, which indicates that the amount of paramagnetic impurities can be controlled by tuning the number of defects in CaCu3Ru4O12 samples.
文摘The oxidation behavior of the single crystal Ni-based superalloy TMS-82+ was studied under cyclic condition at 900 and 1 000 ℃ for 200 h in air. The oxidation kinetics for the superalloy at both exposure temperatures was explained by the subparabolic relationship. The results show that increasing the exposure temperature from 900 to 1 000 ℃,the amounts of α-Al2O3,(Ni,Co)Al2O4 and NiCr2O4 increase,resulting in a higher mass gain. The oxides consist of(Ni,Co)O,CrTaO4,AlTaO4,Cr2O3,θ-,-α-Al2O3 and(Ni,Co)Al2O4 in the specimen at 900 ℃,but NiCr2O4 spinel forms for the specimen exposed at 1 000 ℃ except the above mentioned oxides. A continuous α-Al2O3 layer is responsible for a slow growth rate of the scale after an initial rapid oxidation of NiO.
基金funded by the Russian Science Foundation,project#23-29-10196。
文摘A commercial epi-ready(201)β-Ga_(2)O_(3) wafer was investigated upon diamond sawing into pieces measuring 2.5×3 mm^(2).The defect structure and crystallinity in the cut samples has been studied by X-ray diffraction and a selective wet etching technique.The density of defects was estimated from the average value of etch pits calculated,including near-edge regions,and was obtained close to 109 cm^(-2).Blocks with lattice orientation deviated by angles of 1-3 arcmin,as well as non-stoichiometric fractions with a relative strain about(1.0-1.5)×10^(-4)in the[201]direction,were found.Crystal perfection was shown to decrease significantly towards the cutting lines of the samples.To reduce the number of structural defects and increase the crystal perfection of the samples via increasing defect motion mobility,the thermal annealing was employed.Polygonization and formation of a mosaic structure coupled with dislocation wall appearance upon 3 h of annealing at 1100℃ was observed.The fractions characterized by non-stoichiometry phases and the block deviation disappeared.The annealing for 11 h improved the homogeneity and perfection in the crystals.The average density of the etch pits dropped down significantly to 8×10^(6) cm^(-2).
基金supported by Youth Innovation Promotion Association of the Chinese Academy of Sciences(No.2020192)。
文摘Metal oxide mesocrystals(MCs)and mesoporous single crystals(MSCs)exhibit superior carrier transport ability,high specific surface area,shortened photo-carrier diffusion lengths to interfaces and enhanced absorbance of the incident sunlight.These advanced features make metal oxide MCs and MSCs be a promising candidate material in photocatalysis,photoelectrocatalysis,dye sensitized solar cells(DSSCs)and perovskite solar cells(PSCs).Recently,remarkable advances of applying metal oxide MCs and MSCs in these areas have been achieved.Therefore,it is extremely important to deeply understand the influence of the unique properties of metal oxide MCs and MSCs on solar energy conversion systems.Herein,we presented a brief introduction on the synthesis and carrier transfer behavior of metal oxide MCs and MSCs.Then,the rational structure design and modification of metal oxide MCs and MSCs for photocatalysis,photoelectrocatalysis,DSSCs and PSCs are systematically discussed.Finally,the perspectives on extending the application of metal oxide MCs and MSCs are addressed.
