We study the photoemission process of graded-doping CaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, whic...We study the photoemission process of graded-doping CaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, which results in the enhancement of quantum efficiency. The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated. To prevent negative differential mobility from appearing, the surface doping concentration needs to be optimized, and it is calculated to be 3.19×10^17 cm-3. The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 60871012)the Research Fund of Nanjing University of Science and Technology (Grant No. 2010ZYTS032)
文摘We study the photoemission process of graded-doping CaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, which results in the enhancement of quantum efficiency. The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated. To prevent negative differential mobility from appearing, the surface doping concentration needs to be optimized, and it is calculated to be 3.19×10^17 cm-3. The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.
