The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which ...The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated packaging.This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection.The research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on.展开更多
As Moore’s law deteriorates,the research and development of new materials system are crucial for transitioning into the post Moore era.Traditional semiconductor materials,such as silicon,have served as the cornerston...As Moore’s law deteriorates,the research and development of new materials system are crucial for transitioning into the post Moore era.Traditional semiconductor materials,such as silicon,have served as the cornerstone of modern technologies for over half a century.This has been due to extensive research and engineering on new techniques to continuously enrich silicon-based materials system and,subsequently,to develop better performed silicon-based devices.Meanwhile,in the emerging post Moore era,layered semiconductor materials,such as transition metal dichalcogenides(TMDs),have garnered considerable research interest due to their unique electronic and optoelectronic properties,which hold great promise for powering the new era of next generation electronics.As a result,techniques for engineering the properties of layered semiconductors have expanded the possibilities of layered semiconductor-based devices.However,there remain significant limitations in the synthesis and engineering of layered semiconductors,impeding the utilization of layered semiconductor-based devices for mass applications.As a practical alternative,heterogeneous integration between layered and traditional semiconductors provides valuable opportunities to combine the distinctive properties of layered semiconductors with well-developed traditional semiconductors materials system.Here,we provide an overview of the comparative coherence between layered and traditional semiconductors,starting with TMDs as the representation of layered semiconductors.We highlight the meaningful opportunities presented by the heterogeneous integration of layered semiconductors with traditional semiconductors,representing an optimal strategy poised to propel the emerging semiconductor research community and chip industry towards unprecedented advancements in the coming decades.展开更多
Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The chann...Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_(0.7)Ga_(0.3)As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.展开更多
Integration of the high-quality Ga Sb layer on an Si substrate is significant to improve the Ga Sb application in optoelectronic integration.In this work,a suitable ion implantation fluence of 5×10^(16)-cm^(-2)H ...Integration of the high-quality Ga Sb layer on an Si substrate is significant to improve the Ga Sb application in optoelectronic integration.In this work,a suitable ion implantation fluence of 5×10^(16)-cm^(-2)H ions for Ga Sb layer transfer is confirmed.Combining the strain change and the defect evolution,the blistering and exfoliation processes of Ga Sb during annealing is revealed in detail.With the direct wafer bonding,the Ga Sb layer is successfully transferred onto a(100)Si substrate covered by 500-nm thickness thermal oxide SiO_(2)layer.After being annealed at 200℃,the Ga Sb layer shows high crystalline quality with only 77 arcsec for the full width at half maximum(FWHM)of the x-ray rocking curve(XRC).展开更多
In this paper,the system on display panel(SoDP)architecture,the primary stage of heterogeneous integration system in display(HiSID),is introduced for the first time.In this architecture,the driving components of displ...In this paper,the system on display panel(SoDP)architecture,the primary stage of heterogeneous integration system in display(HiSID),is introduced for the first time.In this architecture,the driving components of display,which are supposed to be on the display flexible print circuit(FPC)in traditional architecture,are innovatively integrated onto the backside of display panel.Through the SoDP architecture,the simulated impact strain in the panel fan-out region can decrease about 30%compared to the traditional architecture,and SoDP provides more the 10 mm extra space in the in-plane Y-direction for holding a larger battery.Also,the SoDP is compatible with the current organic laser emitted diode(OLED)and system in package(SiP)processes.Besides the primary stage,this paper also presents a comprehensive and extensive analysis on the challenges of the manufacturability for the advanced stage of HiSID from four key technologies perspectives:device miniaturization,massive manufacturing,driving technology,and advanced heterogeneous integration.展开更多
The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal c...The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.展开更多
The research of three-dimensional integrated communication technology plays a key role in achieving the ubiquitous connectivity,ultra-high data rates,and emergency communications in the sixth generation(6G)networks.Ae...The research of three-dimensional integrated communication technology plays a key role in achieving the ubiquitous connectivity,ultra-high data rates,and emergency communications in the sixth generation(6G)networks.Aerial networking provides a prom⁃ising solution to flexible,scalable,low-cost and reliable coverage for wireless devices.The integration of aerial network and terrestrial network has been an inevitable paradigm in the 6G era.However,energy-efficient communications and networking among aerial net⁃work and terrestrial network face great challenges.This paper is dedicated to discussing green communications of the air-ground integrated heterogeneous network(AGIHN).We first provide a brief introduction to the characteristics of AGIHN in 6G networks.Further,we analyze the challenges of green AGIHN from the aspects of green terrestrial networks and green aerial networks.Finally,several solutions to and key technologies of the green AGIHN are discussed.展开更多
High performance electro-optic modulator,as the key device of integrated ultra-wideband optical systems,have be-come the focus of research.Meanwhile,the organic-based hybrid electro-optic modulators,which make full us...High performance electro-optic modulator,as the key device of integrated ultra-wideband optical systems,have be-come the focus of research.Meanwhile,the organic-based hybrid electro-optic modulators,which make full use of the advant-ages of organic electro-optic(OEO)materials(e.g.high electro-optic coefficient,fast response speed,high bandwidth,easy pro-cessing/integration and low cost)have attracted considerable attention.In this paper,we introduce a series of high-perform-ance OEO materials that exhibit good properties in electro-optic activity and thermal stability.In addition,the recent progress of organic-based hybrid electro-optic devices is reviewed,including photonic crystal-organic hybrid(PCOH),silicon-organic hy-brid(SOH)and plasmonic-organic hybrid(POH)modulators.A high-performance integrated optical platform based on OEO ma-terials is a promising solution for growing high speeds and low power consumption in compact sizes.展开更多
With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore&#...With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's Law.New material systems and new device architectures are considered promising strategies for this challenge.Two-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength range.To this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic integration.In this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon photonics.Firstly,the basic op-tical properties of 2D materials and heterostructures are summarized in the first part.Then,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in detail.Finally,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.展开更多
The heterogeneous integration of photonic integrated circuits(PICs)with a diverse range of optoelectronic materials has emerged as a transformative approach,propelling photonic chips toward larger scales,superior perf...The heterogeneous integration of photonic integrated circuits(PICs)with a diverse range of optoelectronic materials has emerged as a transformative approach,propelling photonic chips toward larger scales,superior performance,and advanced integration levels.Notably,two-dimensional(2D)materials,such as graphene,transition metal dichalcogenides(TMDCs),black phosphorus(BP),and hexagonal boron nitride(hBN),exhibit remarkable device performance and integration capabilities,offering promising potential for large-scale implementation in PICs.In this paper,we first present a comprehensive review of recent progress,systematically categorizing the integration of photonic circuits with 2D materials based on their types while also emphasizing their unique advantages.Then,we discuss the integration approaches of 2D materials with PICs.We also summarize the technical challenges in the heterogeneous integration of 2D materials in photonics and envision their immense potential for future applications in PICs.展开更多
The emergence of artificial intelligence has represented great potential in solving a wide range of complex problems.However,traditional general-purpose chips based on von Neumann architectures face the“memory wall”...The emergence of artificial intelligence has represented great potential in solving a wide range of complex problems.However,traditional general-purpose chips based on von Neumann architectures face the“memory wall”problem when applied in artificial intelligence applications.Based on the efficiency of the human brain,many intelligent neuromorphic chips have been proposed to emulate its working mechanism and neuron-synapse structure.With the emergence of spiking-based neuromorphic chips,the computation and energy efficiency of such devices could be enhanced by integrating a variety of features inspired by the biological brain.Aligning with the rapid development of neuromorphic chips,it is of great importance to quickly initiate the investigation of the electromagnetic interference and signal integrity issues related to neuromorphic chips for both CMOS-based and memristor-based artificial intelligence integrated circuits.Here,this paper provides a review of neuromorphic circuit design and algorithms in terms of electromagnetic issues and opportunities with a focus on signal integrity issues,modeling,and optimization.Moreover,the heterogeneous structures of neuromorphic circuits and other circuits,such as memory arrays and sensors using different integration technologies,are also reviewed,and locations where signal integrity might be compromised are discussed.Finally,we provide future trends in electromagnetic interference and signal integrity and outline prospects for upcoming neuromorphic devices.展开更多
The majority of microelectromechanical system(MEMS)devices must be combined with integrated circuits(ICs)for operation in larger electronic systems.While MEMS transducers sense or control physical,optical or chemical ...The majority of microelectromechanical system(MEMS)devices must be combined with integrated circuits(ICs)for operation in larger electronic systems.While MEMS transducers sense or control physical,optical or chemical quantities,ICs typically provide functionalities related to the signals of these transducers,such as analog-to-digital conversion,amplification,filtering and information processing as well as communication between the MEMS transducer and the outside world.Thus,the vast majority of commercial MEMS products,such as accelerometers,gyroscopes and micro-mirror arrays,are integrated and packaged together with ICs.There are a variety of possible methods of integrating and packaging MEMS and IC components,and the technology of choice strongly depends on the device,the field of application and the commercial requirements.In this review paper,traditional as well as innovative and emerging approaches to MEMS and IC integration are reviewed.These include approaches based on the hybrid integration of multiple chips(multi-chip solutions)as well as system-on-chip solutions based on wafer-level monolithic integration and heterogeneous integration techniques.These are important technological building blocks for the‘More-Than-Moore’paradigm described in the International Technology Roadmap for Semiconductors.In this paper,the various approaches are categorized in a coherent manner,their merits are discussed,and suitable application areas and implementations are critically investigated.The implications of the different MEMS and IC integration approaches for packaging,testing and final system costs are reviewed.展开更多
As we enter the post-Moore era,heterogeneous optoelectronic integrated circuits(OEICs)are attracting significant attention as an alternative approach to scaling to smaller-sized transistors.Two-dimensional(2D)material...As we enter the post-Moore era,heterogeneous optoelectronic integrated circuits(OEICs)are attracting significant attention as an alternative approach to scaling to smaller-sized transistors.Two-dimensional(2D)materials,offering a range of intriguing optoelectronic properties as semiconductors,semimetals,and insulators,provide great potential for developing nextgeneration heterogeneous OEICs.For instance,Fermi levels of 2D materials can be tuned by applying electrical voltages,while their atomically thin geometries are inherently suited for the fabrication of planar devices without suffering from lattice mismatch.Since the first graphene-on-silicon OEICs were demonstrated in 2011,2D-material heterogeneous OEICs have significantly progressed.To date,researchers have a better understanding of the importance of interface states on the optical properties of chip-integrated 2D materials.Moreover,there has been impressive progress towards the use of 2D materials for waveguide-integrated lasers,modulators,and photodetectors.In this review,we summarize the history,status,and trend of integrated optoelectronics with 2D materials.展开更多
Semiconductor mode-locked lasers(MLLs)can provide coherent optical frequency combs(OFCs)with high repetition rates and output power,which have been recognized as potential multi-wavelength sources used in optical comm...Semiconductor mode-locked lasers(MLLs)can provide coherent optical frequency combs(OFCs)with high repetition rates and output power,which have been recognized as potential multi-wavelength sources used in optical communication field due to their compactness,high-efficiency,and low-cost properties.In this article,we have reviewed recent development of semiconductor MLL-based frequency comb generation.Different approaches of semiconductor MLLs for OFC generation are synoptically summarized based on various material platforms.The representative progress of III-V semiconductor MLLs on III-V platform and especially on Si substrates is both discussed for the applications in integrated silicon photonics.展开更多
Interposers with through-silicon vias(TSVs)play a key role in the three-dimensional integration and packaging of integrated circuits and microelectromechanical systems.In the current practice of fabricating interposer...Interposers with through-silicon vias(TSVs)play a key role in the three-dimensional integration and packaging of integrated circuits and microelectromechanical systems.In the current practice of fabricating interposers,solder balls are placed next to the vias;however,this approach requires a large foot print for the input/output(I/O)connections.Therefore,in this study,we investigate the possibility of placing the solder balls directly on top of the vias,thereby enabling a smaller pitch between the solder balls and an increased density of the I/O connections.To reach this goal,inkjet printing(that is,piezo and super inkjet)was used to successfully fill and planarize hollow metal TSVs with a dielectric polymer.The under bump metallization(UBM)pads were also successfully printed with inkjet technology on top of the polymer-filled vias,using either Ag or Au inks.The reliability of the TSV interposers was investigated by a temperature cycling stress test(−40℃ to+125℃).The stress test showed no impact on DC resistance of the TSVs;however,shrinkage and delamination of the polymer was observed,along with some micro-cracks in the UBM pads.For proof of concept,SnAgCu-based solder balls were jetted on the UBM pads.展开更多
In the post-Moore era,the development of active phased array antennas will inevitably trend towards active array microsystems.In this paper,the characteristics and composition of the active array antenna are briefly d...In the post-Moore era,the development of active phased array antennas will inevitably trend towards active array microsystems.In this paper,the characteristics and composition of the active array antenna are briefly described.Owing to the high efficiency,low profile,and light weight of the active array microsystems,the application prospects and advantages in the engineering of multi-functional airborne radar,spaceborne radar,and communication systems are analyzed.Moreover,according to the characteristics of the post-Moore era of integrated circuits,scientific and technological problems in the active array microsystems are presented,including multi-scale,multi-signal,and multi-physics field coupling.The challenges are also discussed,such as new architectures and algorithms,miniaturization of passive components,novel materials and processes,ultra-wideband technology,and new interdisciplinary technological applications.This paper is expected to inspire in-depth research on active array microsystems.展开更多
基金Project supported in part by the National Key Research and Development Program of China(Grant No.2021YFB2206504)the National Natural Science Foundation of China(Grant No.62235017)the China Postdoctoral Science Foundation(Grant No.2021M703125).
文摘The performance of optical interconnection has improved dramatically in recent years.Silicon-based optoelectronic heterogeneous integration is the key enabler to achieve high performance optical interconnection,which not only provides the optical gain which is absent from native Si substrates and enables complete photonic functionalities on chip,but also improves the system performance through advanced heterogeneous integrated packaging.This paper reviews recent progress of silicon-based optoelectronic heterogeneous integration in high performance optical interconnection.The research status,development trend and application of ultra-low loss optical waveguides,high-speed detectors,high-speed modulators,lasers and 2D,2.5D,3D and monolithic integration are focused on.
基金supported by National Key R&D Program of China(2020YFB2008704)the National Natural Science Foundation of China(62004114 and 62174098)+1 种基金Beijing Municipal Science and Technology Commission(Z221100005822011)The Tsinghua-Foshan Innovation Special Fund(2021THFS0215)。
文摘As Moore’s law deteriorates,the research and development of new materials system are crucial for transitioning into the post Moore era.Traditional semiconductor materials,such as silicon,have served as the cornerstone of modern technologies for over half a century.This has been due to extensive research and engineering on new techniques to continuously enrich silicon-based materials system and,subsequently,to develop better performed silicon-based devices.Meanwhile,in the emerging post Moore era,layered semiconductor materials,such as transition metal dichalcogenides(TMDs),have garnered considerable research interest due to their unique electronic and optoelectronic properties,which hold great promise for powering the new era of next generation electronics.As a result,techniques for engineering the properties of layered semiconductors have expanded the possibilities of layered semiconductor-based devices.However,there remain significant limitations in the synthesis and engineering of layered semiconductors,impeding the utilization of layered semiconductor-based devices for mass applications.As a practical alternative,heterogeneous integration between layered and traditional semiconductors provides valuable opportunities to combine the distinctive properties of layered semiconductors with well-developed traditional semiconductors materials system.Here,we provide an overview of the comparative coherence between layered and traditional semiconductors,starting with TMDs as the representation of layered semiconductors.We highlight the meaningful opportunities presented by the heterogeneous integration of layered semiconductors with traditional semiconductors,representing an optimal strategy poised to propel the emerging semiconductor research community and chip industry towards unprecedented advancements in the coming decades.
基金the National Natural Science Foundation of China(Grant No.61434006).
文摘Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_(0.7)Ga_(0.3)As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.
基金the National Key Research and Development Program of China(Grant No.2017YFE0131300)the National Natural Science Foundation of China(Grant Nos.U1732268,61874128,11622545,61851406,11705262,61875220,and 61804157)+6 种基金the Frontier Science Key Program of Chinese Academy of Sciences(Grant Nos.QYZDYSSW-JSC032 and ZDBS-LY-JSC009)the Chinese–Austrian Cooperative Research and Development Project(Grant No.GJHZ201950)the Shanghai Science and Technology Innovation Action Plan Program,China(Grant No.17511106202)the Program of Shanghai Academic Research Leader,China(Grant No.19XD1404600)the Shanghai Youth Top Talent Program,Shanghai Sailing Program,China(Grant Nos.19YF1456200 and 19YF1456400)the K.C.Wong Education Foundation,China(Grant No.GJTD2019-11)the NCBiR within the Polish–China(Grant No.WPC/130/NIR-Si/2018)。
文摘Integration of the high-quality Ga Sb layer on an Si substrate is significant to improve the Ga Sb application in optoelectronic integration.In this work,a suitable ion implantation fluence of 5×10^(16)-cm^(-2)H ions for Ga Sb layer transfer is confirmed.Combining the strain change and the defect evolution,the blistering and exfoliation processes of Ga Sb during annealing is revealed in detail.With the direct wafer bonding,the Ga Sb layer is successfully transferred onto a(100)Si substrate covered by 500-nm thickness thermal oxide SiO_(2)layer.After being annealed at 200℃,the Ga Sb layer shows high crystalline quality with only 77 arcsec for the full width at half maximum(FWHM)of the x-ray rocking curve(XRC).
文摘In this paper,the system on display panel(SoDP)architecture,the primary stage of heterogeneous integration system in display(HiSID),is introduced for the first time.In this architecture,the driving components of display,which are supposed to be on the display flexible print circuit(FPC)in traditional architecture,are innovatively integrated onto the backside of display panel.Through the SoDP architecture,the simulated impact strain in the panel fan-out region can decrease about 30%compared to the traditional architecture,and SoDP provides more the 10 mm extra space in the in-plane Y-direction for holding a larger battery.Also,the SoDP is compatible with the current organic laser emitted diode(OLED)and system in package(SiP)processes.Besides the primary stage,this paper also presents a comprehensive and extensive analysis on the challenges of the manufacturability for the advanced stage of HiSID from four key technologies perspectives:device miniaturization,massive manufacturing,driving technology,and advanced heterogeneous integration.
基金supported by the funding from National Natural Science Foundation of China(Grants No.61851406,61874128,and U1732268)Frontier Science Key Program of CAS(Grant No.QYZDY-SSWJSC032)+2 种基金Program of Shanghai Academic Research Leader(Grant No.19XD1404600)K.C.Wong Education Foundation(Grant No.GJTD-2019-11)Shenzhen Science and Technology Innovation Program(Grant No.JCYJ20190806142614541).
文摘The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.
基金This work was supported by National Natural Science Foundation of Chi⁃na under Grant Nos.61901051 and 61932005.
文摘The research of three-dimensional integrated communication technology plays a key role in achieving the ubiquitous connectivity,ultra-high data rates,and emergency communications in the sixth generation(6G)networks.Aerial networking provides a prom⁃ising solution to flexible,scalable,low-cost and reliable coverage for wireless devices.The integration of aerial network and terrestrial network has been an inevitable paradigm in the 6G era.However,energy-efficient communications and networking among aerial net⁃work and terrestrial network face great challenges.This paper is dedicated to discussing green communications of the air-ground integrated heterogeneous network(AGIHN).We first provide a brief introduction to the characteristics of AGIHN in 6G networks.Further,we analyze the challenges of green AGIHN from the aspects of green terrestrial networks and green aerial networks.Finally,several solutions to and key technologies of the green AGIHN are discussed.
基金the National Natural Science Foundation of China(No.62175267)the Beijing Municipal Natural Science Foundation(No.4192061)+1 种基金the Fundamental Research Funds for the Central Universities(2020MDJC13)the Beijing Talents Foundation(2018000021223ZK45)for the financial support.
文摘High performance electro-optic modulator,as the key device of integrated ultra-wideband optical systems,have be-come the focus of research.Meanwhile,the organic-based hybrid electro-optic modulators,which make full use of the advant-ages of organic electro-optic(OEO)materials(e.g.high electro-optic coefficient,fast response speed,high bandwidth,easy pro-cessing/integration and low cost)have attracted considerable attention.In this paper,we introduce a series of high-perform-ance OEO materials that exhibit good properties in electro-optic activity and thermal stability.In addition,the recent progress of organic-based hybrid electro-optic devices is reviewed,including photonic crystal-organic hybrid(PCOH),silicon-organic hy-brid(SOH)and plasmonic-organic hybrid(POH)modulators.A high-performance integrated optical platform based on OEO ma-terials is a promising solution for growing high speeds and low power consumption in compact sizes.
基金supported by the National Natural Science Foundation of China(Nos.52221001,U19A2090,62090035,52172140,51902098,62175061)the Key Program of the Hunan Provincial Science and Technology Department(Nos.2019XK2001,2020XK2001)+3 种基金the International Science and Technology Innovation Cooperation Base of Hunan Province(No.2018WK4004)the Outstanding Scholarship Program of Hunan Province(No.2021JJ10021)the Science and Technology Innovation Program of Hunan Province(No.2021RC3061)the Natural Science Foundation of Hunan Province(Nos.2022JJ30167,2021JJ20016).
文摘With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's Law.New material systems and new device architectures are considered promising strategies for this challenge.Two-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength range.To this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic integration.In this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon photonics.Firstly,the basic op-tical properties of 2D materials and heterostructures are summarized in the first part.Then,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in detail.Finally,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.
文摘The heterogeneous integration of photonic integrated circuits(PICs)with a diverse range of optoelectronic materials has emerged as a transformative approach,propelling photonic chips toward larger scales,superior performance,and advanced integration levels.Notably,two-dimensional(2D)materials,such as graphene,transition metal dichalcogenides(TMDCs),black phosphorus(BP),and hexagonal boron nitride(hBN),exhibit remarkable device performance and integration capabilities,offering promising potential for large-scale implementation in PICs.In this paper,we first present a comprehensive review of recent progress,systematically categorizing the integration of photonic circuits with 2D materials based on their types while also emphasizing their unique advantages.Then,we discuss the integration approaches of 2D materials with PICs.We also summarize the technical challenges in the heterogeneous integration of 2D materials in photonics and envision their immense potential for future applications in PICs.
文摘The emergence of artificial intelligence has represented great potential in solving a wide range of complex problems.However,traditional general-purpose chips based on von Neumann architectures face the“memory wall”problem when applied in artificial intelligence applications.Based on the efficiency of the human brain,many intelligent neuromorphic chips have been proposed to emulate its working mechanism and neuron-synapse structure.With the emergence of spiking-based neuromorphic chips,the computation and energy efficiency of such devices could be enhanced by integrating a variety of features inspired by the biological brain.Aligning with the rapid development of neuromorphic chips,it is of great importance to quickly initiate the investigation of the electromagnetic interference and signal integrity issues related to neuromorphic chips for both CMOS-based and memristor-based artificial intelligence integrated circuits.Here,this paper provides a review of neuromorphic circuit design and algorithms in terms of electromagnetic issues and opportunities with a focus on signal integrity issues,modeling,and optimization.Moreover,the heterogeneous structures of neuromorphic circuits and other circuits,such as memory arrays and sensors using different integration technologies,are also reviewed,and locations where signal integrity might be compromised are discussed.Finally,we provide future trends in electromagnetic interference and signal integrity and outline prospects for upcoming neuromorphic devices.
基金The work was partially funded by the Swedish Research Council,by the European 7^(th)Framework Programme under grant agreement FP7-NEMIAC(No.288670)by the European Research Council through the ERC Advanced Grant xMEMs(No.267528)and the ERC Starting Grant M&M’s(No.277879).
文摘The majority of microelectromechanical system(MEMS)devices must be combined with integrated circuits(ICs)for operation in larger electronic systems.While MEMS transducers sense or control physical,optical or chemical quantities,ICs typically provide functionalities related to the signals of these transducers,such as analog-to-digital conversion,amplification,filtering and information processing as well as communication between the MEMS transducer and the outside world.Thus,the vast majority of commercial MEMS products,such as accelerometers,gyroscopes and micro-mirror arrays,are integrated and packaged together with ICs.There are a variety of possible methods of integrating and packaging MEMS and IC components,and the technology of choice strongly depends on the device,the field of application and the commercial requirements.In this review paper,traditional as well as innovative and emerging approaches to MEMS and IC integration are reviewed.These include approaches based on the hybrid integration of multiple chips(multi-chip solutions)as well as system-on-chip solutions based on wafer-level monolithic integration and heterogeneous integration techniques.These are important technological building blocks for the‘More-Than-Moore’paradigm described in the International Technology Roadmap for Semiconductors.In this paper,the various approaches are categorized in a coherent manner,their merits are discussed,and suitable application areas and implementations are critically investigated.The implications of the different MEMS and IC integration approaches for packaging,testing and final system costs are reviewed.
基金supported by the National Natural Science Foundation of China(62161160335,62175179,61922034,61805164,61805175)the Science and Technology Plan Project of Shenzhen(JCYJ20190808120801661)Hong Kong Research Grants Council(RGC)Research Grants(N_CUHK423/21)。
文摘As we enter the post-Moore era,heterogeneous optoelectronic integrated circuits(OEICs)are attracting significant attention as an alternative approach to scaling to smaller-sized transistors.Two-dimensional(2D)materials,offering a range of intriguing optoelectronic properties as semiconductors,semimetals,and insulators,provide great potential for developing nextgeneration heterogeneous OEICs.For instance,Fermi levels of 2D materials can be tuned by applying electrical voltages,while their atomically thin geometries are inherently suited for the fabrication of planar devices without suffering from lattice mismatch.Since the first graphene-on-silicon OEICs were demonstrated in 2011,2D-material heterogeneous OEICs have significantly progressed.To date,researchers have a better understanding of the importance of interface states on the optical properties of chip-integrated 2D materials.Moreover,there has been impressive progress towards the use of 2D materials for waveguide-integrated lasers,modulators,and photodetectors.In this review,we summarize the history,status,and trend of integrated optoelectronics with 2D materials.
基金supported by the National Natural Science Foundation of China(61975230 and 62008308)the National Key Research and Development Program of China(2021YFB2800400)Ting Wang was supported by the Youth Innovation Promotion Association of the Chinese Academy of Sciences(2018011)。
文摘Semiconductor mode-locked lasers(MLLs)can provide coherent optical frequency combs(OFCs)with high repetition rates and output power,which have been recognized as potential multi-wavelength sources used in optical communication field due to their compactness,high-efficiency,and low-cost properties.In this article,we have reviewed recent development of semiconductor MLL-based frequency comb generation.Different approaches of semiconductor MLLs for OFC generation are synoptically summarized based on various material platforms.The representative progress of III-V semiconductor MLLs on III-V platform and especially on Si substrates is both discussed for the applications in integrated silicon photonics.
基金This work is supported by ENIAC-JU Project Prominent Grant No 324189 and Tekes Grant No.40336/12 and Vinnova Grants Nos.2012-04301,2012-04287,and 2012-04314MM is supported by the Academy of Finland Grant Nos.288945 and 294119The work of Silex and KTH was funded in part through an Industrial Ph.D.grant from the Swedish Foundation for Strategic Research(SSF),Grant No.ID14-0033.
文摘Interposers with through-silicon vias(TSVs)play a key role in the three-dimensional integration and packaging of integrated circuits and microelectromechanical systems.In the current practice of fabricating interposers,solder balls are placed next to the vias;however,this approach requires a large foot print for the input/output(I/O)connections.Therefore,in this study,we investigate the possibility of placing the solder balls directly on top of the vias,thereby enabling a smaller pitch between the solder balls and an increased density of the I/O connections.To reach this goal,inkjet printing(that is,piezo and super inkjet)was used to successfully fill and planarize hollow metal TSVs with a dielectric polymer.The under bump metallization(UBM)pads were also successfully printed with inkjet technology on top of the polymer-filled vias,using either Ag or Au inks.The reliability of the TSV interposers was investigated by a temperature cycling stress test(−40℃ to+125℃).The stress test showed no impact on DC resistance of the TSVs;however,shrinkage and delamination of the polymer was observed,along with some micro-cracks in the UBM pads.For proof of concept,SnAgCu-based solder balls were jetted on the UBM pads.
基金Project supported by the National Natural Science Foundation of China(No.92373115)the Natural Science Foundation of Anhui Province,China(No.2308085MF193)+2 种基金the Major Natural Science Project of Anhui Provincial Education Department,China(No.KJ2021ZD0003)the Key Research and Development Project of Anhui Province,China(No.2023n06020026)the Innovation and Entrepreneurship of Anhui Province,China(No.Z020118060)。
文摘In the post-Moore era,the development of active phased array antennas will inevitably trend towards active array microsystems.In this paper,the characteristics and composition of the active array antenna are briefly described.Owing to the high efficiency,low profile,and light weight of the active array microsystems,the application prospects and advantages in the engineering of multi-functional airborne radar,spaceborne radar,and communication systems are analyzed.Moreover,according to the characteristics of the post-Moore era of integrated circuits,scientific and technological problems in the active array microsystems are presented,including multi-scale,multi-signal,and multi-physics field coupling.The challenges are also discussed,such as new architectures and algorithms,miniaturization of passive components,novel materials and processes,ultra-wideband technology,and new interdisciplinary technological applications.This paper is expected to inspire in-depth research on active array microsystems.
