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Characterization of Sub-100nm MOSFETs with High K Gate Dielectric
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作者 朱晖文 刘晓彦 +2 位作者 沈超 康晋锋 韩汝琦 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第9期1107-1111,共5页
The short-channel performance of typical 70nm MOSFETs with high K gate dielectric is widely studied by using a two dimensional(2-D) device simulator.The short-channel performance is degraded from the fringing field a... The short-channel performance of typical 70nm MOSFETs with high K gate dielectric is widely studied by using a two dimensional(2-D) device simulator.The short-channel performance is degraded from the fringing field and lower the source/drain junction resistance.The sidewall material is found very useful to eliminate the fringing-induced berrier lowing effect. 展开更多
关键词 high k materials gate dielectrics MOSFET
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