We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition....We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.展开更多
An experimental investigation of the crystallographic,Raman and transport properties of the Ce_(1-x)(Nd_(0.74)Tm_(0.26))_xO_(2-x/2)(0.1≤x≤0.6) doped ceria system was performed with the aim of setting out correlation...An experimental investigation of the crystallographic,Raman and transport properties of the Ce_(1-x)(Nd_(0.74)Tm_(0.26))_xO_(2-x/2)(0.1≤x≤0.6) doped ceria system was performed with the aim of setting out correlations between structural features and ionic conductivity of the material.The chosen composition ensures that the average size of the Nd^(3+) and Tm^(3+) doping ions coincides with the one of Sm^(3+);even so,the studied system presents larger cell parameters and a wider compositional extent of the CeO_(2)-based solid solution than Sm-doped ceria.Moreover,the occurrence of two different activation energies to ionic conduction below and above ~750 K determines the existence of two distinct conduction regimes.The described experimental results agree with the formation below the threshold temperature of1 V_O2 Tm'_(Ce) trimers,which promote the incorporation of Nd'_(Ce) isolated defects into the CeO_(2)-based solid solution.In the high temperature range the dissociation of trimers induces the appearance of a lower activation energy;the extrapolation of its value at infinite dilution provides a result in good accordance with the expected binding energy of 1 V_ORE'_(Ce) dimers,pointing at their stability even in the high temperature conduction regime.展开更多
The grazing incidence X-ray reflectivity(GIXR) technique and atomic force microscopy(AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown...The grazing incidence X-ray reflectivity(GIXR) technique and atomic force microscopy(AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown AlGaN/GaN superlattice structures.The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AlGaN layer.The presence of a smooth interface is responsible for the observation of intensity oscillation in GIXR,which is well correlated to step flow observation in AFM images of the surface.The structure with a low Al mole fraction(x = 0.25) and thin well width has a rather smooth surface for the R,of AFM data value is 0.45 nm.展开更多
The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. ...The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11274153,11204124,and 51202108)the National Key Projects for Basic Research of China(Grant No.2010CB923404)
文摘We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge （001） by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.
基金financially supported by Compagnia di San Paolo, in the frame of the project COLEUS – ID ROL: 32604。
文摘An experimental investigation of the crystallographic,Raman and transport properties of the Ce_(1-x)(Nd_(0.74)Tm_(0.26))_xO_(2-x/2)(0.1≤x≤0.6) doped ceria system was performed with the aim of setting out correlations between structural features and ionic conductivity of the material.The chosen composition ensures that the average size of the Nd^(3+) and Tm^(3+) doping ions coincides with the one of Sm^(3+);even so,the studied system presents larger cell parameters and a wider compositional extent of the CeO_(2)-based solid solution than Sm-doped ceria.Moreover,the occurrence of two different activation energies to ionic conduction below and above ~750 K determines the existence of two distinct conduction regimes.The described experimental results agree with the formation below the threshold temperature of1 V_O2 Tm'_(Ce) trimers,which promote the incorporation of Nd'_(Ce) isolated defects into the CeO_(2)-based solid solution.In the high temperature range the dissociation of trimers induces the appearance of a lower activation energy;the extrapolation of its value at infinite dilution provides a result in good accordance with the expected binding energy of 1 V_ORE'_(Ce) dimers,pointing at their stability even in the high temperature conduction regime.
基金Project supported by the National Natural Science Foundation of China(No60876008)the Science and Technology Program of the Educational Office of Fujian Province,China(NoJA 10249)
文摘The grazing incidence X-ray reflectivity(GIXR) technique and atomic force microscopy(AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown AlGaN/GaN superlattice structures.The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AlGaN layer.The presence of a smooth interface is responsible for the observation of intensity oscillation in GIXR,which is well correlated to step flow observation in AFM images of the surface.The structure with a low Al mole fraction(x = 0.25) and thin well width has a rather smooth surface for the R,of AFM data value is 0.45 nm.
基金Project supported by the National High Technology Research and Development Program of China(No.2012AA03A115)
文摘The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode.
