Indium phosphide(InP)colloidal quantum dots(QDs)have been drawn significant attention as a potentially less toxic alternative to cadmium-based QDs over the past two decades.The advances in their colloidal synthesis me...Indium phosphide(InP)colloidal quantum dots(QDs)have been drawn significant attention as a potentially less toxic alternative to cadmium-based QDs over the past two decades.The advances in their colloidal synthesis methods have allowed for the synthesis of a wide variety of compositions,heterojunctions,dopants,and ligands that enabled spectral tunability from blue to near-infrared,narrow emission linewidths,and perfect quantum yields approaching unity.Furthermore,it has higher covalency compared to cadmium chalcogenides leading to improved optical stability.The state-of-the-art InP QDs with appealing optical and electronic properties have excelled in many applications such as light-emitting diodes,luminescent solar concentrators(LSCs),and solar cells with high potential for commercialization.This review focuses on the history,recent development,and future aspect of synthesis and application of colloidal InP QDs.展开更多
This article reports on the development of a simple two-step lithography process for double barrier quantum well(DBQW)InGaAs/AlAs resonant tunneling diode(RTD)on a semi-insulating indium phosphide(InP)substrate using ...This article reports on the development of a simple two-step lithography process for double barrier quantum well(DBQW)InGaAs/AlAs resonant tunneling diode(RTD)on a semi-insulating indium phosphide(InP)substrate using an air-bridge technology.This approach minimizes processing steps,and therefore the processing time as well as the required resources.It is particularly suited for material qualification of new epitaxial layer designs.A DC performance comparison between the proposed process and the conventional process shows approximately the same results.We expect that this novel technique will aid in the recent and continuing rapid advances in RTD technology.展开更多
The viability of the indium phosphide(InP)Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling.The presence of theδ-doped layer could enh...The viability of the indium phosphide(InP)Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling.The presence of theδ-doped layer could enhance the current harmonic amplitude(A0)and the fundamental operating frequency(f0)of the InP Gunn diode beyond 300 GHz as compared with the conventional notch-doped structure for a 600-nm length device.With its superior electron transport properties,the notch-δ-doped InP Gunn diodes outperform the corresponding gallium arsenide(GaAs)diodes with up to 1.35 times higher in f0 and 2.4 times larger in A0 under DC biases.An optimized InP notch-δ-doped structure is estimated to be capable of generating 0.32-W radio-frequency(RF)power at 361 GHz.The Monte Carlo simulations predict a reduction of 44%in RF power,when the device temperature is increased from 300 K to 500 K;however,its operating frequency lies at 280 GHz which is within the low-THz band.This shows that the notch-δ-doped InP Gunn diode is a highly promising signal source for low-THz sensors,which are in a high demand in the autonomous vehicle industry.展开更多
Optical frequency combs have emerged as an important tool enabling diverse applications from test-and-measurement,including spectroscopy,metrology,precision distance measurement,sensing,as well as optical and microwav...Optical frequency combs have emerged as an important tool enabling diverse applications from test-and-measurement,including spectroscopy,metrology,precision distance measurement,sensing,as well as optical and microwave waveform synthesis,signal processing,and communications.Several techniques exist to generate optical frequency combs,such as mode-locked lasers,Kerr micro-resonators,and electro-optic modulation.Important characteristics of optical frequency combs include the number of comb lines,their spacing,spectral shape and/or flatness,and intensity noise.While mode-locked lasers and Kerr micro-resonators can be used to obtain a large number of comb lines compared to electro-optic modulation,the latter provides increased flexibility in tuning the comb spacing.For some applications in optical communications and microwave photonics,a high degree of integration may be more desirable over a very large number of comb lines.In this paper,we review recent progress on integrated electro-optic frequency comb generators,including those based on indium phosphide,lithium niobate,and silicon photonics.展开更多
Luminescent solar concentrators (LSC) absorb large-area solar radiation and guide down-converted emission to solar cells for electricity production. Quantum dots (QDs) have been widely engineered at device and quantum...Luminescent solar concentrators (LSC) absorb large-area solar radiation and guide down-converted emission to solar cells for electricity production. Quantum dots (QDs) have been widely engineered at device and quantum dot levels for LSCs. Here, we demonstrate cascaded energy transfer and exciton recycling at nanoassembly level for LSCs. The graded structure composed of different sized toxic-heavy-metal-free InP/ZnS core/shell QDs incorporated on copper doped InP QDs, facilitating exciton routing toward narrow band gap QDs at a high nonradiative energy transfer efficiency of 66%. At the final stage of non-radiative energy transfer, the photogenerated holes make ultrafast electronic transitions to copper-induced mid-gap states for radiative recombination in the near-infrared. The exciton recycling facilitates a photoluminescence quantum yield increase of 34% and 61% in comparison with semi-graded and ungraded energy profiles, respectively. Thanks to the suppressed reabsorption and enhanced photoluminescence quantum yield, the graded LSC achieved an optical quantum efficiency of 22.2%. Hence, engineering at nanoassembly level combined with nonradiative energy transfer and exciton funneling offer promise for efficient solar energy harvesting.展开更多
文摘Indium phosphide(InP)colloidal quantum dots(QDs)have been drawn significant attention as a potentially less toxic alternative to cadmium-based QDs over the past two decades.The advances in their colloidal synthesis methods have allowed for the synthesis of a wide variety of compositions,heterojunctions,dopants,and ligands that enabled spectral tunability from blue to near-infrared,narrow emission linewidths,and perfect quantum yields approaching unity.Furthermore,it has higher covalency compared to cadmium chalcogenides leading to improved optical stability.The state-of-the-art InP QDs with appealing optical and electronic properties have excelled in many applications such as light-emitting diodes,luminescent solar concentrators(LSCs),and solar cells with high potential for commercialization.This review focuses on the history,recent development,and future aspect of synthesis and application of colloidal InP QDs.
基金funded by Horizon 2020 Future and Emerging Technologies ChipAI project under the grant agreement 828841.
文摘This article reports on the development of a simple two-step lithography process for double barrier quantum well(DBQW)InGaAs/AlAs resonant tunneling diode(RTD)on a semi-insulating indium phosphide(InP)substrate using an air-bridge technology.This approach minimizes processing steps,and therefore the processing time as well as the required resources.It is particularly suited for material qualification of new epitaxial layer designs.A DC performance comparison between the proposed process and the conventional process shows approximately the same results.We expect that this novel technique will aid in the recent and continuing rapid advances in RTD technology.
文摘The viability of the indium phosphide(InP)Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling.The presence of theδ-doped layer could enhance the current harmonic amplitude(A0)and the fundamental operating frequency(f0)of the InP Gunn diode beyond 300 GHz as compared with the conventional notch-doped structure for a 600-nm length device.With its superior electron transport properties,the notch-δ-doped InP Gunn diodes outperform the corresponding gallium arsenide(GaAs)diodes with up to 1.35 times higher in f0 and 2.4 times larger in A0 under DC biases.An optimized InP notch-δ-doped structure is estimated to be capable of generating 0.32-W radio-frequency(RF)power at 361 GHz.The Monte Carlo simulations predict a reduction of 44%in RF power,when the device temperature is increased from 300 K to 500 K;however,its operating frequency lies at 280 GHz which is within the low-THz band.This shows that the notch-δ-doped InP Gunn diode is a highly promising signal source for low-THz sensors,which are in a high demand in the autonomous vehicle industry.
基金This research was supported in part by the Natural Sciences and Engineering Research Council of Canada and the Fonds du Québec–Nature et Technologies.
文摘Optical frequency combs have emerged as an important tool enabling diverse applications from test-and-measurement,including spectroscopy,metrology,precision distance measurement,sensing,as well as optical and microwave waveform synthesis,signal processing,and communications.Several techniques exist to generate optical frequency combs,such as mode-locked lasers,Kerr micro-resonators,and electro-optic modulation.Important characteristics of optical frequency combs include the number of comb lines,their spacing,spectral shape and/or flatness,and intensity noise.While mode-locked lasers and Kerr micro-resonators can be used to obtain a large number of comb lines compared to electro-optic modulation,the latter provides increased flexibility in tuning the comb spacing.For some applications in optical communications and microwave photonics,a high degree of integration may be more desirable over a very large number of comb lines.In this paper,we review recent progress on integrated electro-optic frequency comb generators,including those based on indium phosphide,lithium niobate,and silicon photonics.
基金This project has received funding from the European Research Council(ERC)under the European Union Horizon 2020 Research and Innovation Programme(grant agreement no.639846).
文摘Luminescent solar concentrators (LSC) absorb large-area solar radiation and guide down-converted emission to solar cells for electricity production. Quantum dots (QDs) have been widely engineered at device and quantum dot levels for LSCs. Here, we demonstrate cascaded energy transfer and exciton recycling at nanoassembly level for LSCs. The graded structure composed of different sized toxic-heavy-metal-free InP/ZnS core/shell QDs incorporated on copper doped InP QDs, facilitating exciton routing toward narrow band gap QDs at a high nonradiative energy transfer efficiency of 66%. At the final stage of non-radiative energy transfer, the photogenerated holes make ultrafast electronic transitions to copper-induced mid-gap states for radiative recombination in the near-infrared. The exciton recycling facilitates a photoluminescence quantum yield increase of 34% and 61% in comparison with semi-graded and ungraded energy profiles, respectively. Thanks to the suppressed reabsorption and enhanced photoluminescence quantum yield, the graded LSC achieved an optical quantum efficiency of 22.2%. Hence, engineering at nanoassembly level combined with nonradiative energy transfer and exciton funneling offer promise for efficient solar energy harvesting.
