A wet etching process for backside via holes suitable for use on InP MMICs technologies is developed for indium phosphide substrate.PMMA is used to mount InP wafer onto glass carrier.Spattered Ta film is utilized as e...A wet etching process for backside via holes suitable for use on InP MMICs technologies is developed for indium phosphide substrate.PMMA is used to mount InP wafer onto glass carrier.Spattered Ta film is utilized as etch mask.HCl+H 3PO 4 solution realised a etch until a depth of 100μm.It is demonstrated that the wet etching backside process is controllable with large latitudes.展开更多
In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV and doses of 1017 el/cm2 (centimeter) and 2 × 1017 el/cm2 (cent...In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV and doses of 1017 el/cm2 (centimeter) and 2 × 1017 el/cm2 (centimeter). It is shown that alongside point defects (in the form of complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T > 300°C that binds accumulating radiation defects.展开更多
The viability of the indium phosphide(InP)Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling.The presence of theδ-doped layer could enh...The viability of the indium phosphide(InP)Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling.The presence of theδ-doped layer could enhance the current harmonic amplitude(A0)and the fundamental operating frequency(f0)of the InP Gunn diode beyond 300 GHz as compared with the conventional notch-doped structure for a 600-nm length device.With its superior electron transport properties,the notch-δ-doped InP Gunn diodes outperform the corresponding gallium arsenide(GaAs)diodes with up to 1.35 times higher in f0 and 2.4 times larger in A0 under DC biases.An optimized InP notch-δ-doped structure is estimated to be capable of generating 0.32-W radio-frequency(RF)power at 361 GHz.The Monte Carlo simulations predict a reduction of 44%in RF power,when the device temperature is increased from 300 K to 500 K;however,its operating frequency lies at 280 GHz which is within the low-THz band.This shows that the notch-δ-doped InP Gunn diode is a highly promising signal source for low-THz sensors,which are in a high demand in the autonomous vehicle industry.展开更多
采用原位磷注入合成法在高压单晶炉内合成富磷的磷化铟 (In P)熔体 ,并利用液封直拉法 (LEC)生长出了 1 0 0 mm In P掺硫单晶材料。对富磷单晶分别用快速扫描光荧光谱技术、腐蚀金相法和扫描电镜进行了研究。结果表明在富磷量足够大的...采用原位磷注入合成法在高压单晶炉内合成富磷的磷化铟 (In P)熔体 ,并利用液封直拉法 (LEC)生长出了 1 0 0 mm In P掺硫单晶材料。对富磷单晶分别用快速扫描光荧光谱技术、腐蚀金相法和扫描电镜进行了研究。结果表明在富磷量足够大的情况下 ,晶片上会出现孔洞 ,并对孔洞周围位错的形成原因及分布进行了分析。 1 0 0 mm In P单晶的平均位错密度也没有明显的增加 ,为今后生长更大尺寸的完整 In展开更多
采用高压垂直温度梯度凝固法(VGF)生长了非掺、掺硫和掺铁的4 inch直径(100)InP单晶,获得的单晶的平均位错密度均小于5000 cm^(-2)。对4 inch InP晶片上进行多点X-射线双晶衍射测试,其(004)X-射线双晶衍射峰的半峰宽约为30弧秒且分布均...采用高压垂直温度梯度凝固法(VGF)生长了非掺、掺硫和掺铁的4 inch直径(100)InP单晶,获得的单晶的平均位错密度均小于5000 cm^(-2)。对4 inch InP晶片上进行多点X-射线双晶衍射测试,其(004)X-射线双晶衍射峰的半峰宽约为30弧秒且分布均匀。与液封直拉法(LEC)相比,VGF-InP单晶生长过程的温度梯度很低,导致其孪晶出现的几率显著增加。然而大量晶体生长结果表明VGF-InP晶锭上出现孪晶后,通常晶体的生长方向仍为(100)方向,这确保从生长的4 inch VGF-InP(100)晶锭上仍能获得相当数量的2~4 inch(100)晶片。由于铁在InP中的分凝系数很小,掺Fe-InP单晶VGF生长过程中容易出现组份过冷,导致多晶生长。通过控制生长温度梯度及掺铁量,可获得较高的掺铁InP单晶成晶率。对VGF-InP单晶的电学性质、位错密度及位错的分布特点、晶体完整性等进行了研究。展开更多
The free electron concentration of as-grown liquid encapsulated Czochralski (LE C) InP measured by Hall effect is much higher than the concentration of net dono r impurity determined by glow discharge mass spectroscop...The free electron concentration of as-grown liquid encapsulated Czochralski (LE C) InP measured by Hall effect is much higher than the concentration of net dono r impurity determined by glow discharge mass spectroscopy.Evidence of the existe nce of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-do ped InP materials can be obseved with infrared absorption spectra.The concentra tion increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe concentration in Fe-doped semi-insulating (S I) InP.These results indicate that the hydrogen-indium vacancy complex is an im portant donor defect in as-grown LEC InP,and that it has significant influence on the compensation in Fe-doped SI InP展开更多
The electrical properties of annealed undoped n type InP are studied by temperature dependent Hall effect (TDH) and current voltage ( I V ) measurements for semiconducting and semi insulating samples,respectivel...The electrical properties of annealed undoped n type InP are studied by temperature dependent Hall effect (TDH) and current voltage ( I V ) measurements for semiconducting and semi insulating samples,respectively.Defect band conduction in annealed semiconducting InP can be observed from TDH measurement,which is similar to those of as grown unintentionally doped InP with low carrier concentration and moderate compensation.The I V curves of annealed undoped SI InP exhibit ohmic property in the applied field region up to the onset of breakdown.Such a result is different from that of as grown Fe doped SI InP which has a nonlinear region in I V curve explained by the theory of space charge limited current.展开更多
文摘A wet etching process for backside via holes suitable for use on InP MMICs technologies is developed for indium phosphide substrate.PMMA is used to mount InP wafer onto glass carrier.Spattered Ta film is utilized as etch mask.HCl+H 3PO 4 solution realised a etch until a depth of 100μm.It is demonstrated that the wet etching backside process is controllable with large latitudes.
文摘In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV and doses of 1017 el/cm2 (centimeter) and 2 × 1017 el/cm2 (centimeter). It is shown that alongside point defects (in the form of complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T > 300°C that binds accumulating radiation defects.
文摘The viability of the indium phosphide(InP)Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling.The presence of theδ-doped layer could enhance the current harmonic amplitude(A0)and the fundamental operating frequency(f0)of the InP Gunn diode beyond 300 GHz as compared with the conventional notch-doped structure for a 600-nm length device.With its superior electron transport properties,the notch-δ-doped InP Gunn diodes outperform the corresponding gallium arsenide(GaAs)diodes with up to 1.35 times higher in f0 and 2.4 times larger in A0 under DC biases.An optimized InP notch-δ-doped structure is estimated to be capable of generating 0.32-W radio-frequency(RF)power at 361 GHz.The Monte Carlo simulations predict a reduction of 44%in RF power,when the device temperature is increased from 300 K to 500 K;however,its operating frequency lies at 280 GHz which is within the low-THz band.This shows that the notch-δ-doped InP Gunn diode is a highly promising signal source for low-THz sensors,which are in a high demand in the autonomous vehicle industry.
文摘采用原位磷注入合成法在高压单晶炉内合成富磷的磷化铟 (In P)熔体 ,并利用液封直拉法 (LEC)生长出了 1 0 0 mm In P掺硫单晶材料。对富磷单晶分别用快速扫描光荧光谱技术、腐蚀金相法和扫描电镜进行了研究。结果表明在富磷量足够大的情况下 ,晶片上会出现孔洞 ,并对孔洞周围位错的形成原因及分布进行了分析。 1 0 0 mm In P单晶的平均位错密度也没有明显的增加 ,为今后生长更大尺寸的完整 In
文摘采用高压垂直温度梯度凝固法(VGF)生长了非掺、掺硫和掺铁的4 inch直径(100)InP单晶,获得的单晶的平均位错密度均小于5000 cm^(-2)。对4 inch InP晶片上进行多点X-射线双晶衍射测试,其(004)X-射线双晶衍射峰的半峰宽约为30弧秒且分布均匀。与液封直拉法(LEC)相比,VGF-InP单晶生长过程的温度梯度很低,导致其孪晶出现的几率显著增加。然而大量晶体生长结果表明VGF-InP晶锭上出现孪晶后,通常晶体的生长方向仍为(100)方向,这确保从生长的4 inch VGF-InP(100)晶锭上仍能获得相当数量的2~4 inch(100)晶片。由于铁在InP中的分凝系数很小,掺Fe-InP单晶VGF生长过程中容易出现组份过冷,导致多晶生长。通过控制生长温度梯度及掺铁量,可获得较高的掺铁InP单晶成晶率。对VGF-InP单晶的电学性质、位错密度及位错的分布特点、晶体完整性等进行了研究。
文摘The free electron concentration of as-grown liquid encapsulated Czochralski (LE C) InP measured by Hall effect is much higher than the concentration of net dono r impurity determined by glow discharge mass spectroscopy.Evidence of the existe nce of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-do ped InP materials can be obseved with infrared absorption spectra.The concentra tion increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe concentration in Fe-doped semi-insulating (S I) InP.These results indicate that the hydrogen-indium vacancy complex is an im portant donor defect in as-grown LEC InP,and that it has significant influence on the compensation in Fe-doped SI InP
文摘The electrical properties of annealed undoped n type InP are studied by temperature dependent Hall effect (TDH) and current voltage ( I V ) measurements for semiconducting and semi insulating samples,respectively.Defect band conduction in annealed semiconducting InP can be observed from TDH measurement,which is similar to those of as grown unintentionally doped InP with low carrier concentration and moderate compensation.The I V curves of annealed undoped SI InP exhibit ohmic property in the applied field region up to the onset of breakdown.Such a result is different from that of as grown Fe doped SI InP which has a nonlinear region in I V curve explained by the theory of space charge limited current.
