Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID eff...Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs.展开更多
In order to achieve a wider range of ionizing radiations detection,novel fluorescence sensing materials have been developed that utilize the fluorescence enhancement phenomenon caused by the intramolecular photoinduce...In order to achieve a wider range of ionizing radiations detection,novel fluorescence sensing materials have been developed that utilize the fluorescence enhancement phenomenon caused by the intramolecular photoinduced electron transfer(PET)effect.Two perylene diimide isomers PDI-P and PDI-B were designed and synthesized,and their molecular structures were characterized by high-resolution Fourier transform mass spectrometry(HRMS),nuclear magnetic resonance hydrogen and carbon spectroscopy(~1H and~(13)C NMR).The interaction between ionizing radiation and fluorescent molecules was simulated by HCl titration.The results show that combining PDIs and HCl can improve fluorescence through the retro-PET process.Despite the similarities in chemical structures,the fluorescent enhancement multiple of PDI-B with aromatic amine as electron donor is much higher than that of PDI-P with alkyl amine.In the direct irradiation experiments of ionizing radiation,the emission enhancement multiples of PDI-P and PDI-B are 2.01 and 45.4,respectively.Furthermore,density functional theory(DFT)and time-dependent density functional theory(TDDFT)calculations indicate that the HOMO and HOMO-1 energy ranges of PDI-P and PDI-B are 0.54 e V and 1.13 e V,respectively.A wider energy range has a stronger driving force on electrons,which is conducive to fluorescence quenching.Both femtosecond transient absorption spectroscopy(fs-TAS)and transient fluorescence spectroscopy(TFS)tests show that PDI-B has shorter charge separation lifetime and higher electron transfer rate constant.Although both isomers can significantly reduce LOD during PET process,PDI-B with aromatic amine has a wider detection range of 0.118—240 Gy due to its larger emission enhancement,which is a leap of three orders of magnitude.It breaks through the detection range of gamma radiation reported in existing studies,and provides theoretical support for the further study of sensitive and effective new materials for ionizing radiation detection.展开更多
Objective To investigate the fate and underlying mechanisms of G2 phase arrest in cancer cells elicited by ionizing radiation(IR).Methods Human melanoma A375 and 92-1 cells were treated with X-rays radiation or Aurora...Objective To investigate the fate and underlying mechanisms of G2 phase arrest in cancer cells elicited by ionizing radiation(IR).Methods Human melanoma A375 and 92-1 cells were treated with X-rays radiation or Aurora A inhibitor MLN8237(MLN)and/or p21 depletion by small interfering RNA(si RNA).Cell cycle distribution was determined using flow cytometry and a fluorescent ubiquitin-based cell cycle indicator(FUCCI)system combined with histone H3 phosphorylation at Ser10(p S10 H3)detection.Senescence was assessed using senescence-associated-β-galactosidase(SA-β-Gal),Ki67,andγH2AX staining.Protein expression levels were determined using western blotting.Results Tumor cells suffered severe DNA damage and underwent G2 arrest after IR treatment.The damaged cells did not successfully enter M phase nor were they stably blocked at G2 phase but underwent mitotic skipping and entered G1 phase as tetraploid cells,ultimately leading to senescence in G1.During this process,the p53/p21 pathway is hyperactivated.Accompanying p21 accumulation,Aurora A kinase levels declined sharply.MLN treatment confirmed that Aurora A kinase activity is essential for mitosis skipping and senescence induction.Conclusion Persistent p21 activation during IR-induced G2 phase blockade drives Aurora A kinase degradation,leading to senescence via mitotic skipping.展开更多
Nuclear safety is a global growing concern,where ionizing radiation(IR)is a major injury factor resulting in serious damage to organisms.The detection of IR is usually conducted with physical dosimeters;however,biolog...Nuclear safety is a global growing concern,where ionizing radiation(IR)is a major injury factor resulting in serious damage to organisms.The detection of IR is usually conducted with physical dosimeters;however,biological IR detection methods are deficient.Here,a living composite hydrogel consisting of engineered bacteria and gelatin/sodium alginate was 3D-printed for the biological detection of IR.Three strains of PrecA::egfp gene circuit-containing engineered Escherichia coli were constructed with IR-dependent fluorescence,and the DH5αstrain was finally selected due to its highest radiation response and fluorescence.Engineered bacteria were loaded in a series of gelatin/sodium alginate matrix hydrogels with different rheology,3D printability and bacterial applicability.A high-gelatin-content hydrogel containing 10%gelatin/1.25%sodium alginatewas optimal.The optimal living composite hydrogelwas 3D-printedwith the special bioink,which reported significant green fluorescence underγ-ray radiation.The living composite hydrogel provides a biological strategy for the detection of environmental ionizing radiation.展开更多
The total ionizing dose(TID) effect is a key cause for the degradation/failure of semiconductor device performance under energetic-particle irradiation. We developed a dynamic model of mobile particles and defects by ...The total ionizing dose(TID) effect is a key cause for the degradation/failure of semiconductor device performance under energetic-particle irradiation. We developed a dynamic model of mobile particles and defects by solving the rate equations and Poisson's equation simultaneously, to understand threshold voltage shifts induced by TID in silicon-based metal–oxide–semiconductor(MOS) devices. The calculated charged defect distribution and corresponding electric field under different TIDs are consistent with experiments. TID changes the electric field at the Si/SiO_(2) interface by inducing the accumulation of oxide charged defects nearby, thus shifting the threshold voltage accordingly. With increasing TID, the oxide charged defects increase to saturation, and the electric field increases following the universal 2/3 power law. Through analyzing the influence of TID on the interfacial electric field by different factors, we recommend that the radiation-hardened performance of devices can be improved by choosing a thin oxide layer with high permittivity and under high gate voltages.展开更多
AIM: To examine the protection of ferulic acid(FA) against ionizing radiation(IR)-induced lens injury in rats, as well as the underlying mechanisms.METHODS: FA(50 mg/kg) was administered to rats for 4 consecutive days...AIM: To examine the protection of ferulic acid(FA) against ionizing radiation(IR)-induced lens injury in rats, as well as the underlying mechanisms.METHODS: FA(50 mg/kg) was administered to rats for 4 consecutive days before they were given 10 Gy γ-radiation, as well as for 3 consecutive days afterward. Two weeks after radiation, the eye tissues were collected. Histological alterations were evaluated by hematoxylineosin staining. Enzyme linked immunosorbent assay(ELISA) was utilized to assess the activities of glutathione reductase(GR) and superoxide dismutase(SOD), as well as the levels of glutathione(GSH) and malondialdehyde(MDA) in the lenses. The protein and m RNA levels of Bcl-2, caspase-3, Bax, heme oxygenase-1(HO-1), and glutamatecysteine ligase catalytic subunit(GCLC) were quantified using Western blot and quantitative reverse transcription polymerase chain reaction, respectively. With nuclear extracts, the nuclear factor erythroid-2 related factor(Nrf2) protein expressions in the nuclei were also measured.RESULTS: Rats exposed to IR showed lens histological alterations which could be alleviated by FA. FA treatment reversed apoptosis-related markers in IR-induced lens, as evidenced by lower levels of Bax and caspase-3 and higher level of Bcl-2. Furthermore, IR induced oxidative damage manifested by decreased GSH level, increased MDA level, and decreased SOD and GR activities. FA boosted nuclear translocation of Nrf2 and increased the expressions of HO-1 and GCLC to inhibit oxidative stress, as evidenced by an increase in GSH, a decrease in MDA, and an increase in GR and SOD activities.CONCLUSION: FA may work well in preventing and treating IR-induced cataract through promoting the Nrf2 signal pathway to attenuate oxidative damage and cell apoptosis.展开更多
The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to ...The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.展开更多
The quantification of ionizing energy deposition and non-ionizing energy deposition plays a critical role in precision neutron dosimetry and in the separation of the displacement damage effects and ionizing effects in...The quantification of ionizing energy deposition and non-ionizing energy deposition plays a critical role in precision neutron dosimetry and in the separation of the displacement damage effects and ionizing effects induced by neutron radiation on semiconductor devices. In this report, neutrons generated by the newly built China Spallation Neutron Source (CSNS) are simulated by Geant4 in semiconductor material silicon to calculate the ionizing and non-ionizing kerma factors. Furthermore, the integral method is applied to calculate neutron-induced ionizing at the CSNS and non-ionizing kerma factors according to the standard neutron nuclear database and the incident neutron spectrum. In addition, thermoluminescence dosimeters are utilized to measure the ionizing energy deposition and six series of bipolar junction transistors are used to measure the non-ionizing energy deposition based on their neutron damage constants. The calibrated kerma factors that were experimentally measured agreed well with the simulation and integral calculation results. This report describes a complete set of methods and fundamental data for the analysis of neutron-induced radiation effects at the CSNS on silicon-based semiconductor devices.展开更多
Machine learning methods have proven to be powerful in various research fields.In this paper,we show that research on radiation effects could benefit from such methods and present a machine learning-based scientific d...Machine learning methods have proven to be powerful in various research fields.In this paper,we show that research on radiation effects could benefit from such methods and present a machine learning-based scientific discovery approach.The total ionizing dose(TID)effects usually cause gain degradation of bipolar junction transistors(BJTs),leading to functional failures of bipolar integrated circuits.Currently,many experiments of TID effects on BJTs have been conducted at different laboratories worldwide,producing a large amount of experimental data which provides a wealth of information.However,it is difficult to utilize these data effectively.In this study,we proposed a new artificial neural network(ANN)approach to analyze the experimental data of TID effects on BJTs An ANN model was built and trained using data collected from different experiments.The results indicate that the proposed ANN model has advantages in capturing nonlinear correlations and predicting the data.The trained ANN model suggests that the TID hardness of a BJT tends to increase with base current I.A possible cause for this finding was analyzed and confirmed through irradiation experiments.展开更多
Objective:To discuss effect of ionizing radiation on transcription of colorectal cancer multidrug resistance(MDR) 1 gene of HCT-8 cells.Methods:Total RNA was extracted by guanidine thiocyanate one-step method.Northern...Objective:To discuss effect of ionizing radiation on transcription of colorectal cancer multidrug resistance(MDR) 1 gene of HCT-8 cells.Methods:Total RNA was extracted by guanidine thiocyanate one-step method.Northern blot was applied to detect transcription level of MDR1 gene.The expression of P-gp protein was detected by flow cytometry.Results:The expression of MDRl of normal colorectal cancer HCT-8 cells was low.It was increased by 8.35 times under stimulus with 2 Gy.When treated with low doses in advance,high expressed MDR was decreased significantly under 0.05,0.1 Gy,which was 69.00%,62.89%in 2 Cy group and 5.77 times,5.25 times in sham irradiation group.No obvious difference was detected between(0.2+2) Gy group and 2 Gy group.Compared with sham irradiation group,the percentage of P-gp positive cells after radiation of a high 2 Gy dose was increased significantly(P【0.01).When treated with high radiation dose following low radiation dose(0.05 Gy,0.1 Gy) in advance,the percentage of P-gp positive cells were also increased significantly.The percentage of P-gp positive cells were increased obviously in 0.2 Gy and 2 Gy groups.Compared with simple high radiation 2 Gy group,the percentage of P-gp positive cells was decreased significantly(P【0.05).Conclusions: Low radiation dose can reverse multidrug resistance of colorectal cancer cells caused by high radiation dose.展开更多
The influence of combined total ionization dose(TID)and radiated electromagnetic interference(EMI)in a commercial analog-to-digital converter(ADC)was studied.The degradation of the direct-current response,the static p...The influence of combined total ionization dose(TID)and radiated electromagnetic interference(EMI)in a commercial analog-to-digital converter(ADC)was studied.The degradation of the direct-current response,the static parameters,and the dynamic parameters caused by the TID and EMI separately and synergistically is presented.The experimental results demonstrate that the increase in TID intensifies data error and the signal-tonoise ratio(SNR)degradation caused by radiated EMI.The cumulative distribution function of EMI failure with respect to data error and SNR with different TIDs was extracted.The decreasing trend of the threshold was acquired with a small sample size of five for each TID group.The result indicates that the ADC is more sensitive in a compound radiation environment.展开更多
Surveying ionizing radiations of the surrounding with a smartphone provides a low-cost and convenient utility for the general public. We developed a smartphone application(App) that uses the built-in camera with a CMO...Surveying ionizing radiations of the surrounding with a smartphone provides a low-cost and convenient utility for the general public. We developed a smartphone application(App) that uses the built-in camera with a CMOS sensor and a radiation signal extraction algorithm.After a calibration through a series of radiation exposures,the App could display radiation dose rate and cumulative dose in real time without requiring covering the camera lens. A smartphone with this App can be used as a fast survey tool for ionizing radiations.展开更多
Objective The expression patterns of ribosomal large subunit protein 23 a(RPL23 a)in mouse testes and GC-1 cells were analyzed to investigate the potential relationship between RPL23 a expression and spermatogonia apo...Objective The expression patterns of ribosomal large subunit protein 23 a(RPL23 a)in mouse testes and GC-1 cells were analyzed to investigate the potential relationship between RPL23 a expression and spermatogonia apoptosis upon exposure to X-ray.Methods Male mice and GC-1 cells were irradiated with X-ray,terminal dUTP nick end-labelling(TUNEL)was performed to detect apoptotic spermatogonia in vivo.Apoptotic rate and cell cycle phase of GC-1 cells were analyzed with flow cytometry.Protein interactions were detected by Immunoprecipitation and protein localization as studied by immunofluorescence.Immunoblotting and real-time PCR were applied to analyze to protein and gene expression.Results Ionizing radiation(IR)increased spermatogonia apoptosis,the expression of RPL11,MDM2 and p53,and decreased RPL23 a expression in mice spermatogonia in vivo and in vitro.RPL23 a knockdown weakened the interaction between RPL23 a and RPL11,leading to p53 accumulation.Moreover,knockdown and IR decreased RPL23 a that induces spermatogonia apoptosis via RPL23 a-RPL11-MDM2-p53 pathway in GC-1 cells.Conclusion These results suggested that IR reduced RPL23 a expression,leading to weakened the RPL23 a-RPL11 interactions,which may have activated p53,resulting in spermatogonia apoptosis.These results provide insights into environmental and clinical risks of radiotherapy following exposure to IR in male fertility.The graphical abstract was available in the web of www.besjournal.com.展开更多
Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator(PDSOI)NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly corre...Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator(PDSOI)NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling(BBT) has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide(BOX) contributes a lot to the latchup effect.展开更多
The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises(LFN) are measure...The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises(LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease,while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated.Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.展开更多
The influence of characteristics' measurement sequence on total ionizing dose effect in partially-depleted SOI nMOSFET is comprehensively studied. We find that measuring the front-gate curves has no influence on t...The influence of characteristics' measurement sequence on total ionizing dose effect in partially-depleted SOI nMOSFET is comprehensively studied. We find that measuring the front-gate curves has no influence on total ionizing dose effect.However, the back-gate curves' measurement has a great influence on total ionizing dose effect due to high electric field in the buried oxide during measuring. In this paper, we analyze their mechanisms and we find that there are three kinds of electrons tunneling mechanisms at the bottom corner of the shallow trench isolation and in the buried oxide during the backgate curves' measurement, which are: Fowler–Nordheim tunneling, trap-assisted tunneling, and charge-assisted tunneling.The tunneling electrons neutralize the radiation-induced positive trapped charges, which weakens the total ionizing dose effect. As the total ionizing dose level increases, the charge-assisted tunneling is enhanced by the radiation-induced positive trapped charges. Hence, the influence of the back-gate curves' measurement is enhanced as the total ionizing dose level increases. Different irradiation biases are compared with each other. An appropriate measurement sequence and voltage bias are proposed to eliminate the influence of measurement.展开更多
Objective To investigate the function of primary cilia in regulating the cellular response to temozolomide(TMZ)and ionizing radiation(IR)in glioblastoma(GBM).Methods GBM cells were treated with TMZ or X-ray/carbon ion...Objective To investigate the function of primary cilia in regulating the cellular response to temozolomide(TMZ)and ionizing radiation(IR)in glioblastoma(GBM).Methods GBM cells were treated with TMZ or X-ray/carbon ion.The primary cilia were examined by immunostaining with Arl13 b andγ-tubulin,and the cellular resistance ability was measured by cell viability assay or survival fraction assay.Combining with cilia ablation by IFT88 depletion or chloral hydrate and induction by lithium chloride,the autophagy was measured by acridine orange staining assay.The DNA damage repair ability was estimated by the kinetic curve ofγH2 AX foci,and the DNAdependent protein kinase(DNA-PK)activation was detected by immunostaining assay.Results Primary cilia were frequently preserved in GBM,and the induction of ciliogenesis decreased cell proliferation.TMZ and IR promoted ciliogenesis in dose-and time-dependent manners,and the suppression of ciliogenesis significantly enhanced the cellular sensitivity to TMZ and IR.The inhibition of ciliogenesis elevated the lethal effects of TMZ and IR via the impairment of autophagy and DNA damage repair.The interference of ciliogenesis reduced DNA-PK activation,and the knockdown of DNA-PK led to cilium formation and elongation.Conclusion Primary cilia play a vital role in regulating the cellular sensitivity to TMZ and IR in GBM cells through mediating autophagy and DNA damage repair.展开更多
Objective To explore the role of p21 in ionizing radiation-induced changes in protein levels during the G2/M transition and long-term G2 arrest.Methods Protein expression levels were assessed by western blot in the hu...Objective To explore the role of p21 in ionizing radiation-induced changes in protein levels during the G2/M transition and long-term G2 arrest.Methods Protein expression levels were assessed by western blot in the human uveal melanoma 92-1 cells after treatment with ionizing radiation.Depletion of p21 was carried out by employing the siR NA technique.Cell cycle distribution was determined by flow cytometry combined with histone H3 phosphorylation at Ser28,an M-phase marker.Senescence was assessed by senescenceassociated-β-galactosidase(SA-β-gal) staining combined with Ki67 staining,a cell proliferation marker.Results Accompanying increased p21,the protein levels of G2/M transition genes declined significantly in 92-1 cells irradiated with 5 Gy of X-rays.Furthermore,these irradiated cells were blocked at the G2 phase followed by cellular senescence.Depletion of p21 rescued radiation-induced G2 arrest as demonstrated by the upregulation of G2/M transition kinases,as well as the high expression of histone H3 phosphorylated at Ser28.Knockdown of p21 resulted in entry into mitosis of irradiated 92-1 cells.However,cells with serious DNA damage failed to undergo cytokinesis,leading to the accumulation of multinucleated cells.Conclusion Our results indicated that p21 was responsible for the downregulation of G2/M transition regulatory proteins and the bypass of mitosis induced by irradiation.Downregulation of p21 by siR NA resulted in G2-arrested cells entering into mitosis with serious DNA damage.This is the first report on elucidating the role of p21 in the bypass of mitosis.展开更多
The influence of an ionizing laser on the pump-probe spectra of^(87)Rb over the transition 5^(2)S_(1/2),F=2→5^(2)P_(3/2),F'=3 is experimentally studied in an operating magneto-optical trap.These spectral features...The influence of an ionizing laser on the pump-probe spectra of^(87)Rb over the transition 5^(2)S_(1/2),F=2→5^(2)P_(3/2),F'=3 is experimentally studied in an operating magneto-optical trap.These spectral features,including gain peak,a dispersion-like structure and absorption peak,become weak as the intensity of the ionizing laser increases.Moreover,the profiles of the absorption peak and gain peak vary as the ionizing laser intensity changes.Such results indicate that there is more than one component in the two features and that each component has different dependences on the number of^(87)Rb atoms.展开更多
基金This work was supported by the special fund of the State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(No.SKLIPR2011).
文摘Simulating the total ionizing dose(TID)of an electrical system using transistor-level models can be difficult and expensive,particularly for digital-integrated circuits(ICs).In this study,a method for modeling TID effects in complementary metaloxide semiconductor(CMOS)digital ICs based on the input/output buffer information specification(IBIS)was proposed.The digital IC was first divided into three parts based on its internal structure:the input buffer,output buffer,and functional area.Each of these three parts was separately modeled.Using the IBIS model,the transistor V-I characteristic curves of the buffers were processed,and the physical parameters were extracted and modeled using VHDL-AMS.In the functional area,logic functions were modeled in VHDL according to the data sheet.A golden digital IC model was developed by combining the input buffer,output buffer,and functional area models.Furthermore,the golden ratio was reconstructed based on TID experimental data,enabling the assessment of TID effects on the threshold voltage,carrier mobility,and time series of the digital IC.TID experiments were conducted using a CMOS non-inverting multiplexer,NC7SZ157,and the results were compared with the simulation results,which showed that the relative errors were less than 2%at each dose point.This confirms the practicality and accuracy of the proposed modeling method.The TID effect model for digital ICs developed using this modeling technique includes both the logical function of the IC and changes in electrical properties and functional degradation impacted by TID,which has potential applications in the design of radiation-hardening tolerance in digital ICs.
基金financial support from the National Natural Science Foundation of China(Grant No.21801016)the Science and Technology on Applied Physical Chemistry Laboratory(Grant No.6142602220304)。
文摘In order to achieve a wider range of ionizing radiations detection,novel fluorescence sensing materials have been developed that utilize the fluorescence enhancement phenomenon caused by the intramolecular photoinduced electron transfer(PET)effect.Two perylene diimide isomers PDI-P and PDI-B were designed and synthesized,and their molecular structures were characterized by high-resolution Fourier transform mass spectrometry(HRMS),nuclear magnetic resonance hydrogen and carbon spectroscopy(~1H and~(13)C NMR).The interaction between ionizing radiation and fluorescent molecules was simulated by HCl titration.The results show that combining PDIs and HCl can improve fluorescence through the retro-PET process.Despite the similarities in chemical structures,the fluorescent enhancement multiple of PDI-B with aromatic amine as electron donor is much higher than that of PDI-P with alkyl amine.In the direct irradiation experiments of ionizing radiation,the emission enhancement multiples of PDI-P and PDI-B are 2.01 and 45.4,respectively.Furthermore,density functional theory(DFT)and time-dependent density functional theory(TDDFT)calculations indicate that the HOMO and HOMO-1 energy ranges of PDI-P and PDI-B are 0.54 e V and 1.13 e V,respectively.A wider energy range has a stronger driving force on electrons,which is conducive to fluorescence quenching.Both femtosecond transient absorption spectroscopy(fs-TAS)and transient fluorescence spectroscopy(TFS)tests show that PDI-B has shorter charge separation lifetime and higher electron transfer rate constant.Although both isomers can significantly reduce LOD during PET process,PDI-B with aromatic amine has a wider detection range of 0.118—240 Gy due to its larger emission enhancement,which is a leap of three orders of magnitude.It breaks through the detection range of gamma radiation reported in existing studies,and provides theoretical support for the further study of sensitive and effective new materials for ionizing radiation detection.
基金supported by the Science and Technology Research Project of Gansu Province[20JR5RA555 and145RTSA012]the Natural Science Foundation of Shaanxi Province[2020JQ-541]+1 种基金the National Natural Science Foundation of China[31870851 and 12175289]the Youth Innovation Promotion Association CAS[2021415]
文摘Objective To investigate the fate and underlying mechanisms of G2 phase arrest in cancer cells elicited by ionizing radiation(IR).Methods Human melanoma A375 and 92-1 cells were treated with X-rays radiation or Aurora A inhibitor MLN8237(MLN)and/or p21 depletion by small interfering RNA(si RNA).Cell cycle distribution was determined using flow cytometry and a fluorescent ubiquitin-based cell cycle indicator(FUCCI)system combined with histone H3 phosphorylation at Ser10(p S10 H3)detection.Senescence was assessed using senescence-associated-β-galactosidase(SA-β-Gal),Ki67,andγH2AX staining.Protein expression levels were determined using western blotting.Results Tumor cells suffered severe DNA damage and underwent G2 arrest after IR treatment.The damaged cells did not successfully enter M phase nor were they stably blocked at G2 phase but underwent mitotic skipping and entered G1 phase as tetraploid cells,ultimately leading to senescence in G1.During this process,the p53/p21 pathway is hyperactivated.Accompanying p21 accumulation,Aurora A kinase levels declined sharply.MLN treatment confirmed that Aurora A kinase activity is essential for mitosis skipping and senescence induction.Conclusion Persistent p21 activation during IR-induced G2 phase blockade drives Aurora A kinase degradation,leading to senescence via mitotic skipping.
基金supported by the Special Program for Capability Promotion
文摘Nuclear safety is a global growing concern,where ionizing radiation(IR)is a major injury factor resulting in serious damage to organisms.The detection of IR is usually conducted with physical dosimeters;however,biological IR detection methods are deficient.Here,a living composite hydrogel consisting of engineered bacteria and gelatin/sodium alginate was 3D-printed for the biological detection of IR.Three strains of PrecA::egfp gene circuit-containing engineered Escherichia coli were constructed with IR-dependent fluorescence,and the DH5αstrain was finally selected due to its highest radiation response and fluorescence.Engineered bacteria were loaded in a series of gelatin/sodium alginate matrix hydrogels with different rheology,3D printability and bacterial applicability.A high-gelatin-content hydrogel containing 10%gelatin/1.25%sodium alginatewas optimal.The optimal living composite hydrogelwas 3D-printedwith the special bioink,which reported significant green fluorescence underγ-ray radiation.The living composite hydrogel provides a biological strategy for the detection of environmental ionizing radiation.
基金Project supported by the Science Challenge Project of China (Grant No.TZ2018004)the National Natural Science Foundation of China (Grant Nos.11975018 and 11775254)+1 种基金the National MCF Energy R&D Program of China (Grant No.2018YEF0308100)the outstanding member of Youth Innovation Promotion Association CAS (Grant No.Y202087)。
文摘The total ionizing dose(TID) effect is a key cause for the degradation/failure of semiconductor device performance under energetic-particle irradiation. We developed a dynamic model of mobile particles and defects by solving the rate equations and Poisson's equation simultaneously, to understand threshold voltage shifts induced by TID in silicon-based metal–oxide–semiconductor(MOS) devices. The calculated charged defect distribution and corresponding electric field under different TIDs are consistent with experiments. TID changes the electric field at the Si/SiO_(2) interface by inducing the accumulation of oxide charged defects nearby, thus shifting the threshold voltage accordingly. With increasing TID, the oxide charged defects increase to saturation, and the electric field increases following the universal 2/3 power law. Through analyzing the influence of TID on the interfacial electric field by different factors, we recommend that the radiation-hardened performance of devices can be improved by choosing a thin oxide layer with high permittivity and under high gate voltages.
基金Supported by Medical Science Foundation of Military for Young Scholars (No.19QNP064)Natural Science Foundation of Jiangsu Province (No.BK20191233)Jiangsu Funding Program for Excellent Postdoctoral Talent (No.2022ZB702)。
文摘AIM: To examine the protection of ferulic acid(FA) against ionizing radiation(IR)-induced lens injury in rats, as well as the underlying mechanisms.METHODS: FA(50 mg/kg) was administered to rats for 4 consecutive days before they were given 10 Gy γ-radiation, as well as for 3 consecutive days afterward. Two weeks after radiation, the eye tissues were collected. Histological alterations were evaluated by hematoxylineosin staining. Enzyme linked immunosorbent assay(ELISA) was utilized to assess the activities of glutathione reductase(GR) and superoxide dismutase(SOD), as well as the levels of glutathione(GSH) and malondialdehyde(MDA) in the lenses. The protein and m RNA levels of Bcl-2, caspase-3, Bax, heme oxygenase-1(HO-1), and glutamatecysteine ligase catalytic subunit(GCLC) were quantified using Western blot and quantitative reverse transcription polymerase chain reaction, respectively. With nuclear extracts, the nuclear factor erythroid-2 related factor(Nrf2) protein expressions in the nuclei were also measured.RESULTS: Rats exposed to IR showed lens histological alterations which could be alleviated by FA. FA treatment reversed apoptosis-related markers in IR-induced lens, as evidenced by lower levels of Bax and caspase-3 and higher level of Bcl-2. Furthermore, IR induced oxidative damage manifested by decreased GSH level, increased MDA level, and decreased SOD and GR activities. FA boosted nuclear translocation of Nrf2 and increased the expressions of HO-1 and GCLC to inhibit oxidative stress, as evidenced by an increase in GSH, a decrease in MDA, and an increase in GR and SOD activities.CONCLUSION: FA may work well in preventing and treating IR-induced cataract through promoting the Nrf2 signal pathway to attenuate oxidative damage and cell apoptosis.
基金Project supported by the National Natural Science Foundation of China(Grant No.12004329)Open Project of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(Grant No.SKLIPR2115)+1 种基金Postgraduate Research and Practice Innovation Program of Jiangsu Province(Grant No.SJCX22_1704)Innovative Science and Technology Platform Project of Cooperation between Yangzhou City and Yangzhou University,China(Grant Nos.YZ202026301 and YZ202026306)。
文摘The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.
基金supported by the National Natural Science Foundation of China(Nos.11690040 and 11690043)the Foundation of State Key Laboratory of China(Nos.SKLIPR1801Z and 6142802180304)
文摘The quantification of ionizing energy deposition and non-ionizing energy deposition plays a critical role in precision neutron dosimetry and in the separation of the displacement damage effects and ionizing effects induced by neutron radiation on semiconductor devices. In this report, neutrons generated by the newly built China Spallation Neutron Source (CSNS) are simulated by Geant4 in semiconductor material silicon to calculate the ionizing and non-ionizing kerma factors. Furthermore, the integral method is applied to calculate neutron-induced ionizing at the CSNS and non-ionizing kerma factors according to the standard neutron nuclear database and the incident neutron spectrum. In addition, thermoluminescence dosimeters are utilized to measure the ionizing energy deposition and six series of bipolar junction transistors are used to measure the non-ionizing energy deposition based on their neutron damage constants. The calibrated kerma factors that were experimentally measured agreed well with the simulation and integral calculation results. This report describes a complete set of methods and fundamental data for the analysis of neutron-induced radiation effects at the CSNS on silicon-based semiconductor devices.
基金supported by the National Natural Science Foundation of China (Nos. 11690040 and 11690043)。
文摘Machine learning methods have proven to be powerful in various research fields.In this paper,we show that research on radiation effects could benefit from such methods and present a machine learning-based scientific discovery approach.The total ionizing dose(TID)effects usually cause gain degradation of bipolar junction transistors(BJTs),leading to functional failures of bipolar integrated circuits.Currently,many experiments of TID effects on BJTs have been conducted at different laboratories worldwide,producing a large amount of experimental data which provides a wealth of information.However,it is difficult to utilize these data effectively.In this study,we proposed a new artificial neural network(ANN)approach to analyze the experimental data of TID effects on BJTs An ANN model was built and trained using data collected from different experiments.The results indicate that the proposed ANN model has advantages in capturing nonlinear correlations and predicting the data.The trained ANN model suggests that the TID hardness of a BJT tends to increase with base current I.A possible cause for this finding was analyzed and confirmed through irradiation experiments.
文摘Objective:To discuss effect of ionizing radiation on transcription of colorectal cancer multidrug resistance(MDR) 1 gene of HCT-8 cells.Methods:Total RNA was extracted by guanidine thiocyanate one-step method.Northern blot was applied to detect transcription level of MDR1 gene.The expression of P-gp protein was detected by flow cytometry.Results:The expression of MDRl of normal colorectal cancer HCT-8 cells was low.It was increased by 8.35 times under stimulus with 2 Gy.When treated with low doses in advance,high expressed MDR was decreased significantly under 0.05,0.1 Gy,which was 69.00%,62.89%in 2 Cy group and 5.77 times,5.25 times in sham irradiation group.No obvious difference was detected between(0.2+2) Gy group and 2 Gy group.Compared with sham irradiation group,the percentage of P-gp positive cells after radiation of a high 2 Gy dose was increased significantly(P【0.01).When treated with high radiation dose following low radiation dose(0.05 Gy,0.1 Gy) in advance,the percentage of P-gp positive cells were also increased significantly.The percentage of P-gp positive cells were increased obviously in 0.2 Gy and 2 Gy groups.Compared with simple high radiation 2 Gy group,the percentage of P-gp positive cells was decreased significantly(P【0.05).Conclusions: Low radiation dose can reverse multidrug resistance of colorectal cancer cells caused by high radiation dose.
文摘The influence of combined total ionization dose(TID)and radiated electromagnetic interference(EMI)in a commercial analog-to-digital converter(ADC)was studied.The degradation of the direct-current response,the static parameters,and the dynamic parameters caused by the TID and EMI separately and synergistically is presented.The experimental results demonstrate that the increase in TID intensifies data error and the signal-tonoise ratio(SNR)degradation caused by radiated EMI.The cumulative distribution function of EMI failure with respect to data error and SNR with different TIDs was extracted.The decreasing trend of the threshold was acquired with a small sample size of five for each TID group.The result indicates that the ADC is more sensitive in a compound radiation environment.
基金supported in part by Fundamental Research Funds for the Central Universities(No.FRF-TP-15-114A1)the National Natural Science Foundation of China(No.11505300&11605008)
文摘Surveying ionizing radiations of the surrounding with a smartphone provides a low-cost and convenient utility for the general public. We developed a smartphone application(App) that uses the built-in camera with a CMOS sensor and a radiation signal extraction algorithm.After a calibration through a series of radiation exposures,the App could display radiation dose rate and cumulative dose in real time without requiring covering the camera lens. A smartphone with this App can be used as a fast survey tool for ionizing radiations.
基金the National Natural Science Foundation of China[31902339]the Foundation for Youth Doctor of Gansu Province[2021QB-026]+2 种基金the Youth Talent Program of“Fuxi”[Gaufx-03Y02]the Scientific Research Start-up Funds for Openly-Recruited Doctors of Gansu Agricultural University[2017RCZX-13]the Special Funds for Discipline Construction of Gansu Agricultural University[GAU-XKJS-2018-067]。
文摘Objective The expression patterns of ribosomal large subunit protein 23 a(RPL23 a)in mouse testes and GC-1 cells were analyzed to investigate the potential relationship between RPL23 a expression and spermatogonia apoptosis upon exposure to X-ray.Methods Male mice and GC-1 cells were irradiated with X-ray,terminal dUTP nick end-labelling(TUNEL)was performed to detect apoptotic spermatogonia in vivo.Apoptotic rate and cell cycle phase of GC-1 cells were analyzed with flow cytometry.Protein interactions were detected by Immunoprecipitation and protein localization as studied by immunofluorescence.Immunoblotting and real-time PCR were applied to analyze to protein and gene expression.Results Ionizing radiation(IR)increased spermatogonia apoptosis,the expression of RPL11,MDM2 and p53,and decreased RPL23 a expression in mice spermatogonia in vivo and in vitro.RPL23 a knockdown weakened the interaction between RPL23 a and RPL11,leading to p53 accumulation.Moreover,knockdown and IR decreased RPL23 a that induces spermatogonia apoptosis via RPL23 a-RPL11-MDM2-p53 pathway in GC-1 cells.Conclusion These results suggested that IR reduced RPL23 a expression,leading to weakened the RPL23 a-RPL11 interactions,which may have activated p53,resulting in spermatogonia apoptosis.These results provide insights into environmental and clinical risks of radiotherapy following exposure to IR in male fertility.The graphical abstract was available in the web of www.besjournal.com.
基金Project supported by Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)
文摘Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator(PDSOI)NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling(BBT) has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide(BOX) contributes a lot to the latchup effect.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61574048 and 61204112the Science and Technology Research Project of Guangdong Province under Grant Nos 2015B090912002 and 2014A030313656the Pearl River S&T Nova Program of Guangzhou
文摘The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises(LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease,while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated.Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.
文摘The influence of characteristics' measurement sequence on total ionizing dose effect in partially-depleted SOI nMOSFET is comprehensively studied. We find that measuring the front-gate curves has no influence on total ionizing dose effect.However, the back-gate curves' measurement has a great influence on total ionizing dose effect due to high electric field in the buried oxide during measuring. In this paper, we analyze their mechanisms and we find that there are three kinds of electrons tunneling mechanisms at the bottom corner of the shallow trench isolation and in the buried oxide during the backgate curves' measurement, which are: Fowler–Nordheim tunneling, trap-assisted tunneling, and charge-assisted tunneling.The tunneling electrons neutralize the radiation-induced positive trapped charges, which weakens the total ionizing dose effect. As the total ionizing dose level increases, the charge-assisted tunneling is enhanced by the radiation-induced positive trapped charges. Hence, the influence of the back-gate curves' measurement is enhanced as the total ionizing dose level increases. Different irradiation biases are compared with each other. An appropriate measurement sequence and voltage bias are proposed to eliminate the influence of measurement.
基金supported by the National Natural Sciences Foundation of China[31870851 and 31471953]the Nonprofit Central Research Institute Fund of Chinese Academy of Medical Sciences[2019PT320005]+1 种基金the Science and Technology Research Project of Gansu Province[145RTSA012 and 20JR5RA555]the Youth Innovation Promotion Association CAS[2021415]
文摘Objective To investigate the function of primary cilia in regulating the cellular response to temozolomide(TMZ)and ionizing radiation(IR)in glioblastoma(GBM).Methods GBM cells were treated with TMZ or X-ray/carbon ion.The primary cilia were examined by immunostaining with Arl13 b andγ-tubulin,and the cellular resistance ability was measured by cell viability assay or survival fraction assay.Combining with cilia ablation by IFT88 depletion or chloral hydrate and induction by lithium chloride,the autophagy was measured by acridine orange staining assay.The DNA damage repair ability was estimated by the kinetic curve ofγH2 AX foci,and the DNAdependent protein kinase(DNA-PK)activation was detected by immunostaining assay.Results Primary cilia were frequently preserved in GBM,and the induction of ciliogenesis decreased cell proliferation.TMZ and IR promoted ciliogenesis in dose-and time-dependent manners,and the suppression of ciliogenesis significantly enhanced the cellular sensitivity to TMZ and IR.The inhibition of ciliogenesis elevated the lethal effects of TMZ and IR via the impairment of autophagy and DNA damage repair.The interference of ciliogenesis reduced DNA-PK activation,and the knockdown of DNA-PK led to cilium formation and elongation.Conclusion Primary cilia play a vital role in regulating the cellular sensitivity to TMZ and IR in GBM cells through mediating autophagy and DNA damage repair.
基金supported by the National Natural Science Foundation of China[No.U1232125,31270895]the International Science&Technology Cooperation Program of China[No.2015DFR30940]
文摘Objective To explore the role of p21 in ionizing radiation-induced changes in protein levels during the G2/M transition and long-term G2 arrest.Methods Protein expression levels were assessed by western blot in the human uveal melanoma 92-1 cells after treatment with ionizing radiation.Depletion of p21 was carried out by employing the siR NA technique.Cell cycle distribution was determined by flow cytometry combined with histone H3 phosphorylation at Ser28,an M-phase marker.Senescence was assessed by senescenceassociated-β-galactosidase(SA-β-gal) staining combined with Ki67 staining,a cell proliferation marker.Results Accompanying increased p21,the protein levels of G2/M transition genes declined significantly in 92-1 cells irradiated with 5 Gy of X-rays.Furthermore,these irradiated cells were blocked at the G2 phase followed by cellular senescence.Depletion of p21 rescued radiation-induced G2 arrest as demonstrated by the upregulation of G2/M transition kinases,as well as the high expression of histone H3 phosphorylated at Ser28.Knockdown of p21 resulted in entry into mitosis of irradiated 92-1 cells.However,cells with serious DNA damage failed to undergo cytokinesis,leading to the accumulation of multinucleated cells.Conclusion Our results indicated that p21 was responsible for the downregulation of G2/M transition regulatory proteins and the bypass of mitosis induced by irradiation.Downregulation of p21 by siR NA resulted in G2-arrested cells entering into mitosis with serious DNA damage.This is the first report on elucidating the role of p21 in the bypass of mitosis.
基金the National Natural Science Foundation of China under Grant No 11074299Tsinghua University Initative Scientific Research Program under Grant No 20101081779.
文摘The influence of an ionizing laser on the pump-probe spectra of^(87)Rb over the transition 5^(2)S_(1/2),F=2→5^(2)P_(3/2),F'=3 is experimentally studied in an operating magneto-optical trap.These spectral features,including gain peak,a dispersion-like structure and absorption peak,become weak as the intensity of the ionizing laser increases.Moreover,the profiles of the absorption peak and gain peak vary as the ionizing laser intensity changes.Such results indicate that there is more than one component in the two features and that each component has different dependences on the number of^(87)Rb atoms.
