Heavy ion irradiation effects on charge trapping memory(CTM)capacitors with TiN/Al_(2)O_(3)/HfO_(2)/Al_(2)O_(3)/HfO_(2)/SiO_(2)/p-Si structure have been investigated.The ion-induced interface charges and oxide trap ch...Heavy ion irradiation effects on charge trapping memory(CTM)capacitors with TiN/Al_(2)O_(3)/HfO_(2)/Al_(2)O_(3)/HfO_(2)/SiO_(2)/p-Si structure have been investigated.The ion-induced interface charges and oxide trap charges were calculated and analyzed by capacitance-voltage(C-V)characteristics.The C-V curves shift towards the negative direction after swift heavy ion irradiation,due to the net positive charges accumulating in the trapping layer.The memory window decreases with the increase of ion fluence at high voltage,which results from heavy ion-induced structural damage in the blocking layer.The mechanism of heavy ion irradiation effects on CTM capacitors is discussed in detail with energy band diagrams.The results may help to better understand the physical mechanism of heavy ion-induced degradation of CTM capacitors.展开更多
For cases in which a robot with installed solar cells and a sensor operates in a nuclear reactor building or in space for extravehicular activity, we require elastic and extensible solar cells. More than two different...For cases in which a robot with installed solar cells and a sensor operates in a nuclear reactor building or in space for extravehicular activity, we require elastic and extensible solar cells. More than two different types of sensing are also required, minimally with photovoltaics and built-in electricity. Magnetic compound fluid (MCF) rubber solar cells are made of rubber, so they are elastic and extensible as well as sensitive. To achieve flexibility and an effective photovoltaic effect, MCF rubber solar cells must include both soluble and insoluble rubbers, Fe<sub>3</sub>O<sub>4</sub>, TiO<sub>2</sub>, Na<sub>2</sub>WO<sub>4</sub>∙2H<sub>2</sub>O, etc. On the basis of this constitution, we propose a consummate fabrication process for MCF rubber solar cells. The characteristics of these cells result from the semiconductor-like role of the molecules of TiO<sub>2</sub>, Fe<sub>3</sub>O<sub>4</sub>, Ni, Na<sub>2</sub>WO<sub>4</sub>∙2H<sub>2</sub>O, polydimethylsiloxane (PDMS), natural rubber (NR), oleic acid, polyvinyl alcohol (PVA), water and magnetic cluster involved in the MCF rubber. Their tendencies can be deduced by synthesizing knowledge about the enhancement of the reverse-bias saturation current <em>I</em><sub><em>S</em></sub> and the diode ideality factor <em>N</em>, with conventional knowledge about the semiconductor affected by <em>γ</em>-irradiation and the attenuation of the photon energy of <em>γ</em>-rays.展开更多
The effect of irradiation on the strain sensitivity coefficient of strain sensing fiber Bragg gratings(FBGs) has been investigated through experiments. FBGs were fabricated in single mode fibers with 3 mol% Ge-concent...The effect of irradiation on the strain sensitivity coefficient of strain sensing fiber Bragg gratings(FBGs) has been investigated through experiments. FBGs were fabricated in single mode fibers with 3 mol% Ge-concentration in the core and with a H2-loading treatment. In experiments, the FBGs were subjected to γ-radiation exposures using a Co60 source at a dose-rate of 25 Gy/min up to a total dose of 10.5 kGy. The GeO defect in fiber absorbs photons to form a GeE' defect; the interaction with H2 is a probable reason for the γ-radiation sensitivity of gratings written in hydrogen loaded fibres. The effect mechanism of radiation on the strain sensitivity coefficient is similar to that of radiation on the temperature sensitivity coefficient. Radiation affects the effective index neff, which results in the change of the thermo-optic coefficient and the strain-optic coefficient. Irradiation can change the strain sensitivity coefficient of FBGs by 1.48%–2.71%, as well as changing the Bragg wavelength shift(BWS) by 22 pm–25 pm under a total dose of 10.5 kGy. Our research demonstrates that the effect of irradiation on the strain sensitivity coefficient of FBG is small and that strain sensing FBGs can work well in the radiation environment.展开更多
This paper reports the high-energy proton irradiation effects on GaAs/Ge space solar cells. The solar cells were irradiated by protons with energy of 5-20MeV at fluence ranging from 1×109cm2 to 7×1013cm-2, a...This paper reports the high-energy proton irradiation effects on GaAs/Ge space solar cells. The solar cells were irradiated by protons with energy of 5-20MeV at fluence ranging from 1×109cm2 to 7×1013cm-2, and then their electric parameters were measured at AMO. It was shown that the Iac, Voc,. and Pmax degrade as the fluence increasing, respectively, but the degradation rates of L,, V0 and Pmax decrease as the proton energy increasing, and the degradation is relative to proton irradiation-induced defect with a level of E -0.41eV in irradiated GaAs/Ge cells.展开更多
Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions(209Bi, 9.5 Me V/u) with the fluences in a range of 1011ions/cm2–1012ions/cm2 at room temperature. Both pristine and irradiated ...Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions(209Bi, 9.5 Me V/u) with the fluences in a range of 1011ions/cm2–1012ions/cm2 at room temperature. Both pristine and irradiated samples are investigated by Raman spectroscopy. For pristine graphite films, the "blue shift" of 2D bond and the "red shift" of G bond with the decrease of thickness are found in the Raman spectra. For both irradiated graphene and thin graphite films, the disorder-induced D peak and D' peak are detected at the fluence above a threshold Φth. The thinner the film, the lower the Φthis. In this work, the graphite films thicker than 60 nm reveal defect free via the absence of a D bond signal under the swift heavy ion irradiation till the fluence of 2.6 × 1012ions/cm2. For graphite films thinner than 6 nm, the area ratios between D peak and G peak increase sharply with reducing film thickness. It concludes that it is much easier to induce defects in thinner films than in thicker ones by swift heavy ions. The intensities of the D peak and D' peak increase with increasing ion fluence, which predicts the continuous impacting of swift heavy ions can lead to the increasing of defects in samples. Different defect types are detected in graphite films of different thickness values. The main defect types are discussed via the various intensity ratios between the D peak and D' peak(HD/HD).展开更多
Room temperature irradiation effect of GaAs compound semiconductor by 100 keV Ar^+ ions hasbeen systematically studied by means of transmission electron microscopy. The dose dependence of the Arcion lrradlatlon and ro...Room temperature irradiation effect of GaAs compound semiconductor by 100 keV Ar^+ ions hasbeen systematically studied by means of transmission electron microscopy. The dose dependence of the Arcion lrradlatlon and room temperature annealing errects have been Investigated. The experimental results sho’vthat the structure of GaAs transforms from perrect crystalline through weakly snd severely damaged crystalline to amorphous states with the increase of the irradiation dose and the damaged states are changed during room temperature annealing.展开更多
The ligand exchange reaction is a typical reaction of ferrocenes. This reaction proceeds via the abstraction of a cyclopentadienyl ring by a Lewis acid followed by coordination of an aromatic compound to the resulting...The ligand exchange reaction is a typical reaction of ferrocenes. This reaction proceeds via the abstraction of a cyclopentadienyl ring by a Lewis acid followed by coordination of an aromatic compound to the resulting species. This reaction with conventional heating requires a long reaction time. Furthermore, the reactions with heterocycles are lower than those with the corresponding hydrocarbons, and do not produce any products in some cases. In this paper, the ligand exchange reaction of ferrocene and a heterocyclic aromatic compound during microwave irradiation and its effect are discussed. As a result, for some heterocycles, the decrease in the reaction time was confirmed. Furthermore, under the microwave irradiation conditions, the tendency in which the difference in their reactivities became low was confirmed.展开更多
The effect of microwave irradiation on the intermolecular and intramolecular Friedel-Crafts acylation of aromatic compounds was investigated. Microwave irradiation had no effect on the intermolecular reaction but had ...The effect of microwave irradiation on the intermolecular and intramolecular Friedel-Crafts acylation of aromatic compounds was investigated. Microwave irradiation had no effect on the intermolecular reaction but had an accelerating effect on the intramolecular reaction. This enhanced intramolecular reactivity that was attributed to the high probability of close proximity between the reaction sites.展开更多
In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiat...In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals (nanoclusters) in buried oxides introduced by ion implantation.展开更多
The change of electrical performances of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) andSi bipolar junction transistor (BJT) was studied as a fumction of reactor fast neutron radiation fluence. Af...The change of electrical performances of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) andSi bipolar junction transistor (BJT) was studied as a fumction of reactor fast neutron radiation fluence. After neutron irradia-tion, the collector current Ic and the current gain β decrease, and the base current Ib increases generally for SiGe HBT. Thehigher the neuron irradiation fluence is, the larger Ib increases. For conventional Si BJT, Ic and Ib increase as wellas β decreases much larger than SiGe HBT at the same fluence. It is shown that SiGe HBT has a larger anti-radiationthreshold and better anti-radiation perrormance than Si BJT. The mechanism of performance changes induced by irradiationwas preliminarily discussed.展开更多
To understand the surface morphology evolution of fused silica induced by 10.6-μm CO2 laser irradiation at different parameters,this paper reports that optical microscopy,profilometry,and hydrophilicity tests are uti...To understand the surface morphology evolution of fused silica induced by 10.6-μm CO2 laser irradiation at different parameters,this paper reports that optical microscopy,profilometry,and hydrophilicity tests are utilized to characterize the surface structure and roughness of the laser irradiated area. The results show that three typical surface morphologies and two typical hydrophilicity test images are observed at different laser powers and pulse durations. The correlations between surface temperature and surface morphology as well as hydrophilicity behaviours are presented. The different hydrophilicity behaviours are related to surface structures of the laser-induced crater and thermal diffusion area. The thermal diffusion length monotonously increases with increasing laser power and pulse duration. The crater width is almost determined by the laser beam size. The crater depth is more sensitive to the laser power and pulse duration than the crater width.展开更多
This article presents a review pertains the laser irradiation effects and its possible mechanisms of action on spermatozoa functions in domestic animals. To improve artificial insemination, laser is sensitive and cost...This article presents a review pertains the laser irradiation effects and its possible mechanisms of action on spermatozoa functions in domestic animals. To improve artificial insemination, laser is sensitive and cost effective technique, when compared to other conventional methods. Laser may have both positive and negative effects on spermatozoa functions. Since the effects of light are mediated by reactive oxygen species, and the levels of these reactive oxygen species following irradiating spermatozoa with laser may be responsible for determining the effects of laser on sperm. Dose of laser may be regarded as of great significance and this dosage of laser may be responsible for determining its effects on spermatozoa. Optimum dosage of laser for improving seminal attributes may vary among various species and this need to be standardized in each of them. The beneficial effects include improving sperm livability, acrosomal integrity, hypo-osmotic swelling response, mitochondrial function and computer-aided sperm analysis parameters. The increase in cytochrome c oxidase activity, ATP levels and mitochondrial membrane potential, in laser irradiated cells may be responsible for enhanced sperm quality parameters. Improving fertility with laser irradiated spermatozoa has been reported in few species like boar and need to be elaborated in other species. In conclusion laser may be regarded as an easy, cheap and time saving technology for improving artificial insemination;in addition, laser may have various potential applications in the field of reproductive biotechnology as well as in livestock farms and veterinary polyclinics.展开更多
Diamond like carbon films, prepared by RF glow discharge on glass substrates, were irradiated by γ rays. The as deposited and irradiated films were characterized by Raman spectroscopy, electrical resistivity, and inf...Diamond like carbon films, prepared by RF glow discharge on glass substrates, were irradiated by γ rays. The as deposited and irradiated films were characterized by Raman spectroscopy, electrical resistivity, and infrared transmittance. It is shown that the irradiation of the γ rays can lead to the breaking of SP 3 C H and SP 2 C H bonds, slight increasing of SP 3 C C bonds, and induced hydrogen recombination with H 2 molecules, subsequently diffusing to the surface of the films. When the γ rays irradiation dose reached 10×10 4 Gy, the numbers of SP 3 C H bonds was decreased by about 50%, the resistivity of irradiated DLC films was increased, and the diamond like character of the films became more obvious. The structure of DLC films was modified when irradiated by γ rays. The irradiation mechanisms are briefly discussed.展开更多
AlGaN/GaN high electron mobility transistors(HEMTs) were exposed to 1 MeV neutron irradiation at a neutron fluence of 1 × 10 15 cm 2.The dc characteristics of the devices,such as the drain saturation current and ...AlGaN/GaN high electron mobility transistors(HEMTs) were exposed to 1 MeV neutron irradiation at a neutron fluence of 1 × 10 15 cm 2.The dc characteristics of the devices,such as the drain saturation current and the maximum transconductance,decreased after neutron irradiation.The gate leakage currents increased obviously after neutron irradiation.However,the rf characteristics,such as the cut-off frequency and the maximum frequency,were hardly affected by neutron irradiation.The AlGaN/GaN heterojunctions have been employed for the better understanding of the degradation mechanism.It is shown in the Hall measurements and capacitance-voltage tests that the mobility and concentration of two-dimensional electron gas(2DEG) decreased after neutron irradiation.There was no evidence of the full-width at half-maximum of X-ray diffraction(XRD) rocking curve changing after irradiation,so the dislocation was not influenced by neutron irradiation.It is concluded that the point defects induced in AlGaN and GaN by neutron irradiation are the dominant mechanisms responsible for performance degradations of AlGaN/GaN HEMT devices.展开更多
Most irradiation studies in the hydrogen bonded ferroelectrics have been concentrated on the transient defects induced by ionising radiation,such as ultraviolet(UV) light,where the defects are closely related to the o...Most irradiation studies in the hydrogen bonded ferroelectrics have been concentrated on the transient defects induced by ionising radiation,such as ultraviolet(UV) light,where the defects are closely related to the optical properties.But heavy ion beam irradiation effects have rarely been studied.The structural,optical,and non-linear optical properties of the doped crystals were analyzed with the characterization studies,such as powder XRD,UV-Visible and second harmonic generation(SHG) measurements,respectively.The results for doped KDP crystal were compared with the results of the pure KDP crystals.The experiment results showed that Li3+ irradiation leads to the development of a well-defined surface H peak in dye doped KDP crystals.The stability of KDP single crystal was improved by doping organic dyes.The nano-islands of dye in KDP were likely to be dissolved and enhance the non-linear optical properties of these materials.展开更多
Six amorphous alloys (Alloy 1: Fe<sub>56</sub>Co<sub>24</sub>Nb<sub>4</sub>B<sub>13</sub>Si<sub>2</sub>Cu<sub>1</sub>, Alloy 2: Fe<sub>68.5...Six amorphous alloys (Alloy 1: Fe<sub>56</sub>Co<sub>24</sub>Nb<sub>4</sub>B<sub>13</sub>Si<sub>2</sub>Cu<sub>1</sub>, Alloy 2: Fe<sub>68.5</sub>Co<sub>5</sub>Nb<sub>3</sub>Cu<sub>1</sub>Si<sub>15.5</sub>B<sub>7</sub>, Alloy 3: Fe<sub>75.3</sub>Ni<sub>0.8</sub>Cr<sub>0.9</sub>Si<sub>8.7</sub>B<sub>14.3</sub>, Alloy 4: Fe<sub>56</sub>Co<sub>24</sub>Cr<sub>10</sub>Nb<sub>4</sub>B<sub>3</sub>Si<sub>1</sub>Cu<sub>2</sub>, Alloy 5: Fe<sub>72.9</sub>Nb<sub>3</sub>Cu<sub>1</sub>Si<sub>16.2</sub>B<sub>6.9</sub>, Alloy 6: Fe<sub>83.3</sub>Si<sub>8.6</sub>Nb<sub>5.5</sub>B<sub>1.4</sub>Cu<sub>1.2</sub>) were selected in terms of their composition and magnetostriction constants and uniformly irradiated in a high radiation environment in Hall A of the Thomas Jefferson National Accelerator Facility. The 2 GeV electron beam irradiation-induced effects were characterized by Mӧssbauer spectroscopy. The microstructural changes were related to the evolution of the hyperfine magnetic field distributions and isomer shifts. In particular, the occurrence of stress centers in the amorphous materials was evidenced.展开更多
In this paper we present experimentaI results on irradiation effects of C_(60) fims induced by 2.0 GeV^(136)Xe.The C_(60) fims were prepared by vacuum evaporation at a temperature close to 450℃ onto Al foils.The C_(6...In this paper we present experimentaI results on irradiation effects of C_(60) fims induced by 2.0 GeV^(136)Xe.The C_(60) fims were prepared by vacuum evaporation at a temperature close to 450℃ onto Al foils.The C_(60) layers on Al foils were arranged as a foil stack with the intention of using them to search for preliminary information concerning the overall depth distribution of damage following 2.0 GeV Xe ions irradiations.To展开更多
Yttria-stabilized zirconia(YSZ) is irradiated with 2.0-MeV Au2+ions and 30-keV He+ions. Three types of He, Au,Au + He(successively) ion irradiation are performed. The maximum damage level of a sequential dual ion beam...Yttria-stabilized zirconia(YSZ) is irradiated with 2.0-MeV Au2+ions and 30-keV He+ions. Three types of He, Au,Au + He(successively) ion irradiation are performed. The maximum damage level of a sequential dual ion beam implanted sample is smaller than single Au ion implanted sample. A comparable volume swelling is found in a sequential dual ion beam irradiated sample and it is also found in a single Au ion implanted sample. Both effects can be explained by the partial reorganization of the dislocation network into weakly damaged regions in the dual ion beam implanted YSZ. A vacancy-assisted helium trapping/diffusion mechanism in the dual ion beam irradiated condition is discussed. No phase transformation or amorphization behavior happens in all types of ion irradiated YSZ.展开更多
基金the National Natural Science Foundation of China(Grant Nos.12105340,12035019,and12075290)the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020412)。
文摘Heavy ion irradiation effects on charge trapping memory(CTM)capacitors with TiN/Al_(2)O_(3)/HfO_(2)/Al_(2)O_(3)/HfO_(2)/SiO_(2)/p-Si structure have been investigated.The ion-induced interface charges and oxide trap charges were calculated and analyzed by capacitance-voltage(C-V)characteristics.The C-V curves shift towards the negative direction after swift heavy ion irradiation,due to the net positive charges accumulating in the trapping layer.The memory window decreases with the increase of ion fluence at high voltage,which results from heavy ion-induced structural damage in the blocking layer.The mechanism of heavy ion irradiation effects on CTM capacitors is discussed in detail with energy band diagrams.The results may help to better understand the physical mechanism of heavy ion-induced degradation of CTM capacitors.
文摘For cases in which a robot with installed solar cells and a sensor operates in a nuclear reactor building or in space for extravehicular activity, we require elastic and extensible solar cells. More than two different types of sensing are also required, minimally with photovoltaics and built-in electricity. Magnetic compound fluid (MCF) rubber solar cells are made of rubber, so they are elastic and extensible as well as sensitive. To achieve flexibility and an effective photovoltaic effect, MCF rubber solar cells must include both soluble and insoluble rubbers, Fe<sub>3</sub>O<sub>4</sub>, TiO<sub>2</sub>, Na<sub>2</sub>WO<sub>4</sub>∙2H<sub>2</sub>O, etc. On the basis of this constitution, we propose a consummate fabrication process for MCF rubber solar cells. The characteristics of these cells result from the semiconductor-like role of the molecules of TiO<sub>2</sub>, Fe<sub>3</sub>O<sub>4</sub>, Ni, Na<sub>2</sub>WO<sub>4</sub>∙2H<sub>2</sub>O, polydimethylsiloxane (PDMS), natural rubber (NR), oleic acid, polyvinyl alcohol (PVA), water and magnetic cluster involved in the MCF rubber. Their tendencies can be deduced by synthesizing knowledge about the enhancement of the reverse-bias saturation current <em>I</em><sub><em>S</em></sub> and the diode ideality factor <em>N</em>, with conventional knowledge about the semiconductor affected by <em>γ</em>-irradiation and the attenuation of the photon energy of <em>γ</em>-rays.
基金Project supported by the National Natural Science Foundation of China(Grant No.61007040)
文摘The effect of irradiation on the strain sensitivity coefficient of strain sensing fiber Bragg gratings(FBGs) has been investigated through experiments. FBGs were fabricated in single mode fibers with 3 mol% Ge-concentration in the core and with a H2-loading treatment. In experiments, the FBGs were subjected to γ-radiation exposures using a Co60 source at a dose-rate of 25 Gy/min up to a total dose of 10.5 kGy. The GeO defect in fiber absorbs photons to form a GeE' defect; the interaction with H2 is a probable reason for the γ-radiation sensitivity of gratings written in hydrogen loaded fibres. The effect mechanism of radiation on the strain sensitivity coefficient is similar to that of radiation on the temperature sensitivity coefficient. Radiation affects the effective index neff, which results in the change of the thermo-optic coefficient and the strain-optic coefficient. Irradiation can change the strain sensitivity coefficient of FBGs by 1.48%–2.71%, as well as changing the Bragg wavelength shift(BWS) by 22 pm–25 pm under a total dose of 10.5 kGy. Our research demonstrates that the effect of irradiation on the strain sensitivity coefficient of FBG is small and that strain sensing FBGs can work well in the radiation environment.
基金supported by Visiting Scholar Foundation of Key LaboratoryMinistry of Education,China and Initiative Foundation of Scaence and Technology,Beijing
文摘This paper reports the high-energy proton irradiation effects on GaAs/Ge space solar cells. The solar cells were irradiated by protons with energy of 5-20MeV at fluence ranging from 1×109cm2 to 7×1013cm-2, and then their electric parameters were measured at AMO. It was shown that the Iac, Voc,. and Pmax degrade as the fluence increasing, respectively, but the degradation rates of L,, V0 and Pmax decrease as the proton energy increasing, and the degradation is relative to proton irradiation-induced defect with a level of E -0.41eV in irradiated GaAs/Ge cells.
基金supported by the National Natural Science Foundation of China(Grant Nos.11179003,10975164,10805062,11005134,and 11275237)
文摘Graphene and thin graphite films deposited on SiO2/Si are irradiated by swift heavy ions(209Bi, 9.5 Me V/u) with the fluences in a range of 1011ions/cm2–1012ions/cm2 at room temperature. Both pristine and irradiated samples are investigated by Raman spectroscopy. For pristine graphite films, the "blue shift" of 2D bond and the "red shift" of G bond with the decrease of thickness are found in the Raman spectra. For both irradiated graphene and thin graphite films, the disorder-induced D peak and D' peak are detected at the fluence above a threshold Φth. The thinner the film, the lower the Φthis. In this work, the graphite films thicker than 60 nm reveal defect free via the absence of a D bond signal under the swift heavy ion irradiation till the fluence of 2.6 × 1012ions/cm2. For graphite films thinner than 6 nm, the area ratios between D peak and G peak increase sharply with reducing film thickness. It concludes that it is much easier to induce defects in thinner films than in thicker ones by swift heavy ions. The intensities of the D peak and D' peak increase with increasing ion fluence, which predicts the continuous impacting of swift heavy ions can lead to the increasing of defects in samples. Different defect types are detected in graphite films of different thickness values. The main defect types are discussed via the various intensity ratios between the D peak and D' peak(HD/HD).
文摘Room temperature irradiation effect of GaAs compound semiconductor by 100 keV Ar^+ ions hasbeen systematically studied by means of transmission electron microscopy. The dose dependence of the Arcion lrradlatlon and room temperature annealing errects have been Investigated. The experimental results sho’vthat the structure of GaAs transforms from perrect crystalline through weakly snd severely damaged crystalline to amorphous states with the increase of the irradiation dose and the damaged states are changed during room temperature annealing.
文摘The ligand exchange reaction is a typical reaction of ferrocenes. This reaction proceeds via the abstraction of a cyclopentadienyl ring by a Lewis acid followed by coordination of an aromatic compound to the resulting species. This reaction with conventional heating requires a long reaction time. Furthermore, the reactions with heterocycles are lower than those with the corresponding hydrocarbons, and do not produce any products in some cases. In this paper, the ligand exchange reaction of ferrocene and a heterocyclic aromatic compound during microwave irradiation and its effect are discussed. As a result, for some heterocycles, the decrease in the reaction time was confirmed. Furthermore, under the microwave irradiation conditions, the tendency in which the difference in their reactivities became low was confirmed.
文摘The effect of microwave irradiation on the intermolecular and intramolecular Friedel-Crafts acylation of aromatic compounds was investigated. Microwave irradiation had no effect on the intermolecular reaction but had an accelerating effect on the intramolecular reaction. This enhanced intramolecular reactivity that was attributed to the high probability of close proximity between the reaction sites.
文摘In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals (nanoclusters) in buried oxides introduced by ion implantation.
文摘The change of electrical performances of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) andSi bipolar junction transistor (BJT) was studied as a fumction of reactor fast neutron radiation fluence. After neutron irradia-tion, the collector current Ic and the current gain β decrease, and the base current Ib increases generally for SiGe HBT. Thehigher the neuron irradiation fluence is, the larger Ib increases. For conventional Si BJT, Ic and Ib increase as wellas β decreases much larger than SiGe HBT at the same fluence. It is shown that SiGe HBT has a larger anti-radiationthreshold and better anti-radiation perrormance than Si BJT. The mechanism of performance changes induced by irradiationwas preliminarily discussed.
基金supported by the National High Technology Research and Development Program of China (Grant No. 2008AA8040508)the Foundation for Young Scholars of University of Electronic Science and Technology of China (Grant No. L08010401JX0806)
文摘To understand the surface morphology evolution of fused silica induced by 10.6-μm CO2 laser irradiation at different parameters,this paper reports that optical microscopy,profilometry,and hydrophilicity tests are utilized to characterize the surface structure and roughness of the laser irradiated area. The results show that three typical surface morphologies and two typical hydrophilicity test images are observed at different laser powers and pulse durations. The correlations between surface temperature and surface morphology as well as hydrophilicity behaviours are presented. The different hydrophilicity behaviours are related to surface structures of the laser-induced crater and thermal diffusion area. The thermal diffusion length monotonously increases with increasing laser power and pulse duration. The crater width is almost determined by the laser beam size. The crater depth is more sensitive to the laser power and pulse duration than the crater width.
文摘This article presents a review pertains the laser irradiation effects and its possible mechanisms of action on spermatozoa functions in domestic animals. To improve artificial insemination, laser is sensitive and cost effective technique, when compared to other conventional methods. Laser may have both positive and negative effects on spermatozoa functions. Since the effects of light are mediated by reactive oxygen species, and the levels of these reactive oxygen species following irradiating spermatozoa with laser may be responsible for determining the effects of laser on sperm. Dose of laser may be regarded as of great significance and this dosage of laser may be responsible for determining its effects on spermatozoa. Optimum dosage of laser for improving seminal attributes may vary among various species and this need to be standardized in each of them. The beneficial effects include improving sperm livability, acrosomal integrity, hypo-osmotic swelling response, mitochondrial function and computer-aided sperm analysis parameters. The increase in cytochrome c oxidase activity, ATP levels and mitochondrial membrane potential, in laser irradiated cells may be responsible for enhanced sperm quality parameters. Improving fertility with laser irradiated spermatozoa has been reported in few species like boar and need to be elaborated in other species. In conclusion laser may be regarded as an easy, cheap and time saving technology for improving artificial insemination;in addition, laser may have various potential applications in the field of reproductive biotechnology as well as in livestock farms and veterinary polyclinics.
文摘Diamond like carbon films, prepared by RF glow discharge on glass substrates, were irradiated by γ rays. The as deposited and irradiated films were characterized by Raman spectroscopy, electrical resistivity, and infrared transmittance. It is shown that the irradiation of the γ rays can lead to the breaking of SP 3 C H and SP 2 C H bonds, slight increasing of SP 3 C C bonds, and induced hydrogen recombination with H 2 molecules, subsequently diffusing to the surface of the films. When the γ rays irradiation dose reached 10×10 4 Gy, the numbers of SP 3 C H bonds was decreased by about 50%, the resistivity of irradiated DLC films was increased, and the diamond like character of the films became more obvious. The structure of DLC films was modified when irradiated by γ rays. The irradiation mechanisms are briefly discussed.
基金Project supported by the Major Program and Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033)
文摘AlGaN/GaN high electron mobility transistors(HEMTs) were exposed to 1 MeV neutron irradiation at a neutron fluence of 1 × 10 15 cm 2.The dc characteristics of the devices,such as the drain saturation current and the maximum transconductance,decreased after neutron irradiation.The gate leakage currents increased obviously after neutron irradiation.However,the rf characteristics,such as the cut-off frequency and the maximum frequency,were hardly affected by neutron irradiation.The AlGaN/GaN heterojunctions have been employed for the better understanding of the degradation mechanism.It is shown in the Hall measurements and capacitance-voltage tests that the mobility and concentration of two-dimensional electron gas(2DEG) decreased after neutron irradiation.There was no evidence of the full-width at half-maximum of X-ray diffraction(XRD) rocking curve changing after irradiation,so the dislocation was not influenced by neutron irradiation.It is concluded that the point defects induced in AlGaN and GaN by neutron irradiation are the dominant mechanisms responsible for performance degradations of AlGaN/GaN HEMT devices.
文摘Most irradiation studies in the hydrogen bonded ferroelectrics have been concentrated on the transient defects induced by ionising radiation,such as ultraviolet(UV) light,where the defects are closely related to the optical properties.But heavy ion beam irradiation effects have rarely been studied.The structural,optical,and non-linear optical properties of the doped crystals were analyzed with the characterization studies,such as powder XRD,UV-Visible and second harmonic generation(SHG) measurements,respectively.The results for doped KDP crystal were compared with the results of the pure KDP crystals.The experiment results showed that Li3+ irradiation leads to the development of a well-defined surface H peak in dye doped KDP crystals.The stability of KDP single crystal was improved by doping organic dyes.The nano-islands of dye in KDP were likely to be dissolved and enhance the non-linear optical properties of these materials.
文摘Six amorphous alloys (Alloy 1: Fe<sub>56</sub>Co<sub>24</sub>Nb<sub>4</sub>B<sub>13</sub>Si<sub>2</sub>Cu<sub>1</sub>, Alloy 2: Fe<sub>68.5</sub>Co<sub>5</sub>Nb<sub>3</sub>Cu<sub>1</sub>Si<sub>15.5</sub>B<sub>7</sub>, Alloy 3: Fe<sub>75.3</sub>Ni<sub>0.8</sub>Cr<sub>0.9</sub>Si<sub>8.7</sub>B<sub>14.3</sub>, Alloy 4: Fe<sub>56</sub>Co<sub>24</sub>Cr<sub>10</sub>Nb<sub>4</sub>B<sub>3</sub>Si<sub>1</sub>Cu<sub>2</sub>, Alloy 5: Fe<sub>72.9</sub>Nb<sub>3</sub>Cu<sub>1</sub>Si<sub>16.2</sub>B<sub>6.9</sub>, Alloy 6: Fe<sub>83.3</sub>Si<sub>8.6</sub>Nb<sub>5.5</sub>B<sub>1.4</sub>Cu<sub>1.2</sub>) were selected in terms of their composition and magnetostriction constants and uniformly irradiated in a high radiation environment in Hall A of the Thomas Jefferson National Accelerator Facility. The 2 GeV electron beam irradiation-induced effects were characterized by Mӧssbauer spectroscopy. The microstructural changes were related to the evolution of the hyperfine magnetic field distributions and isomer shifts. In particular, the occurrence of stress centers in the amorphous materials was evidenced.
文摘In this paper we present experimentaI results on irradiation effects of C_(60) fims induced by 2.0 GeV^(136)Xe.The C_(60) fims were prepared by vacuum evaporation at a temperature close to 450℃ onto Al foils.The C_(60) layers on Al foils were arranged as a foil stack with the intention of using them to search for preliminary information concerning the overall depth distribution of damage following 2.0 GeV Xe ions irradiations.To
基金supported by the National Basic Research and Development Program of China(Grant Nos.2010CB832904 and 2010CB832902)the National Natural Science Foundation of China(Grant No.91226202)
文摘Yttria-stabilized zirconia(YSZ) is irradiated with 2.0-MeV Au2+ions and 30-keV He+ions. Three types of He, Au,Au + He(successively) ion irradiation are performed. The maximum damage level of a sequential dual ion beam implanted sample is smaller than single Au ion implanted sample. A comparable volume swelling is found in a sequential dual ion beam irradiated sample and it is also found in a single Au ion implanted sample. Both effects can be explained by the partial reorganization of the dislocation network into weakly damaged regions in the dual ion beam implanted YSZ. A vacancy-assisted helium trapping/diffusion mechanism in the dual ion beam irradiated condition is discussed. No phase transformation or amorphization behavior happens in all types of ion irradiated YSZ.
