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The microstructures investigation in laser weld bonding AZ31B Mg alloy to 6061A1 alloy joint 被引量:3
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作者 王红阳 任大鑫 刘黎明 《China Welding》 EI CAS 2013年第1期21-26,共6页
Adhesive is used in the laser weld bonding Mg to A1 alloys process, in order to improve the property of laser welding joint. The effect of adhesive on the microstrnctures in laser weld bonding AZ31B Mg alloy to 6061Al... Adhesive is used in the laser weld bonding Mg to A1 alloys process, in order to improve the property of laser welding joint. The effect of adhesive on the microstrnctures in laser weld bonding AZ31B Mg alloy to 6061Al alloy are observed by scanning electron microscopy and transmission electron microscope. The results show that the decomposition of the adhesive makes influence on the crystal structure of the Mg fusion zone, which forms the C-Mn precipitates. The morphology of Mg-Al intermetallics is changed, when the adhesive decomposition gas bubble floats out of the fusion zone. Dislocations are formed at the bottom of Al fusion zone with the effect of adhesive decomposition and pulse laser power. 展开更多
关键词 adhesive welding laser weld bonding INTERMETALLICS
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A Single Mode Hybrid Ⅲ-Ⅴ/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection
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作者 王海玲 郑婉华 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第12期77-80,共4页
A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP... A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation. 展开更多
关键词 InP is with Chip Silicon On-Chip laser Based on Flip-Chip bonding Technology for Optical Interconnection A Single Mode Hybrid mode for
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Er^3+,Yb^3+:glass-Co^2+:MgAl2O4 diffusion bonded passively Q-switched laser
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作者 邹岩 惠勇凌 +4 位作者 蔡瑾鹭 郭娜 姜梦华 雷訇 李强 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第9期214-222,共9页
A Co^2+:spinel passively Q-switched erbium-ytterbium-phosphate glass bonded laser pumped at 940 nm is reported.A pulse energy of 210 μJ, a peak power over 70 kW, and beam quality M-2 parameter of 1.2 are obtained u... A Co^2+:spinel passively Q-switched erbium-ytterbium-phosphate glass bonded laser pumped at 940 nm is reported.A pulse energy of 210 μJ, a peak power over 70 kW, and beam quality M-2 parameter of 1.2 are obtained under a pump power of 235 mW. An unbonded laser output experiment with the same dimension of the active material and the saturable absorber as the bonded laser output experiment is carried out. The reason why the output in the bonded laser is improved is determined. 展开更多
关键词 phosphate glass passively Q-switched bonded laser 940 nm pumped
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Theoretical study on non-sequential double ionization of carbon disulfide with different bond lengths in linearly polarizedlaser fields
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作者 Kai-Li Song Wei-Wei Yu +4 位作者 Shuai Ben Tong-Tong Xu Hong-Dan Zhang Pei-Ying Guo Jing Guo 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第2期176-182,共7页
By using a two-dimensional Monte-Carlo classical ensemble method, we investigate the double ionization(DI) process of the CS_2 molecule with different bond lengths in an 800-nm intense laser field. The double ioniza... By using a two-dimensional Monte-Carlo classical ensemble method, we investigate the double ionization(DI) process of the CS_2 molecule with different bond lengths in an 800-nm intense laser field. The double ionization probability presents a "knee" structure with equilibrium internuclear distance R = 2.9245 a.u.(a.u. is short for atomic unit). As the bond length of CS increases, the DI probability is enhanced and the "knee" structure becomes less obvious. In addition,the momentum distribution of double ionized electrons is also investigated, which shows the momentum mostly distributed in the first and third quadrants with equilibrium internuclear distance R = 2.9245 a.u. As the bond length of CS increases,the electron momentum becomes evenly distributed in the four quadrants. Furthermore, the energy distributions and the corresponding trajectories of the double-ionized electrons versus time are also demonstrated, which show that the bond length of CS in the CS_2 molecule plays a key role in the DI process. 展开更多
关键词 intense laser field non-sequential double ionization classical ensemble method the bond length
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A Comparative Study of Epi-up and Epi-Down Bonding of High Power 980 nm Single-Mode Semiconductor Lasers
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作者 Martin Hai Hu Lawrence C Hughes +2 位作者 Hong Ky Nguyen Catherine G. Caneau Chung-En Zah 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期319-320,共2页
Epi-up and epi-down bonding of high power 980nm lasers have been studied in terms of bonding process, thermal behavior, optical performances, thermal stress effects and long-term laser reliability. We demonstrated tha... Epi-up and epi-down bonding of high power 980nm lasers have been studied in terms of bonding process, thermal behavior, optical performances, thermal stress effects and long-term laser reliability. We demonstrated that epi-down bonding can offer lower thermal resistance and improved optical performances without significantly degrading the long-term laser reliability. 展开更多
关键词 down in of A Comparative Study of Epi-up and Epi-Down bonding of High Power 980 nm Single-Mode Semiconductor lasers NM for that mode
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Investigation of hybrid microring lasers adhesively bonded on silicon wafer 被引量:4
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作者 Shao-Shuai Sui Ming-Ying Tang +3 位作者 Yue-De Yang Jin-Long Xiao Yun Du Yong-Zhen Huang 《Photonics Research》 SCIE EI 2015年第6期289-295,共7页
Thermal characteristics are numerically investigated for the hybrid AlGaInAs/InP on silicon microring lasers with different ring radii and widths. Low threshold current and low active region temperature rise are expec... Thermal characteristics are numerically investigated for the hybrid AlGaInAs/InP on silicon microring lasers with different ring radii and widths. Low threshold current and low active region temperature rise are expected for a microring laser with a narrow ring width. Based on the thermal analysis and the 3D simulation for mode characteristics, a hybrid AlGaInAs/InP on silicon microring lasers with an inner n-electrode laterally confined by the p-electrode metallic layer is fabricated using an adhesive bonding technique. A threshold current of 4 mA is achieved for a hybrid microring laser with a radius of 20 μm and a ring width of 3.5 μm at 12°C, and the corresponding threshold current density is as low as 1 kA∕cm^2. The influence of the location of silicon waveguide on output performance is studied experimentally for improving the output coupling efficiency. Furthermore,continuous-wave electrically injected lasing up to 55°C is realized for a hybrid microring laser with a radiusof 30 μm and a ring width of 3 μm. 展开更多
关键词 Investigation of hybrid microring lasers adhesively bonded on silicon wafer INP MODE
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Ka-band broadband filtering packaging antenna based on through-glass vias (TGVs) 被引量:1
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作者 Zhen FANG Jihua ZHANG +8 位作者 Libin GAO Hongwei CHEN Wenlei LI Tianpeng LIANG Xudong CAI Xingzhou CAI Weicong JIA Huan GUO Yong LI 《Frontiers of Information Technology & Electronic Engineering》 SCIE EI CSCD 2023年第6期916-926,共11页
This work presents a novel design of Ka-band(33 GHz)filtering packaging antenna(FPA)that features broadband and great filtering response,and is based on glass packaging material and through-glass via(TGV)technologies.... This work presents a novel design of Ka-band(33 GHz)filtering packaging antenna(FPA)that features broadband and great filtering response,and is based on glass packaging material and through-glass via(TGV)technologies.Compared to traditional packaging materials(printed circuit board,low temperature co-fired ceramic,Si,etc.),TGVs are more suitable for miniaturization(millimeter-wave three-dimensional(3D)packaging devices)and have superior microwave performance.Glass substrate can realize 3D high-density interconnection through bonding technology,while the coefficient of thermal expansion(CTE)matches that of silicon.Furthermore,the stacking of glass substrate enables high-density interconnections and is compatible with micro-electro-mechanical system technology.The proposed antenna radiation patch is composed of a patch antenna and a bandpass filter(BPF)whose reflection coefficients are almost complementary.The BPF unit has three pairs ofλg/4 slots(defect microstrip structure,DMS)and twoλg/2 U-shaped slots(defect ground structure,DGS).The proposed antenna achieves large bandwidth and high radiation efficiency,which may be related to the stacking of glass substrate and TGV feed.In addition,the introduction of four radiation nulls can effectively improve the suppression level in the stopband.To demonstrate the performance of the proposed design,a 33-GHz broadband filtering antenna is optimized,debugged,and measured.The antenna could achieve|S11|<-10 dB in 29.4‒36.4 GHz,and yield an impedance matching bandwidth up to 21.2%,with the stopband suppression level at higher than 16.5 dB.The measurement results of the proposed antenna are a realized gain of~6.5 dBi and radiation efficiency of~89%. 展开更多
关键词 Filtering packaging antenna(FPA) Through-glass vias(TGVs) 3D packaging devices laser bonding
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