The microstructure change in thin NiFe/Cu/NiFe films during the magnetization process was observed by the Lorentz electronmicroscopy. TWo types of films were prepared: (1) one NiFe layer with anisotropy and the other ...The microstructure change in thin NiFe/Cu/NiFe films during the magnetization process was observed by the Lorentz electronmicroscopy. TWo types of films were prepared: (1) one NiFe layer with anisotropy and the other layer without, and (2) both NiFe layershave anisotropy normal each other. The domain wall migration and magnetization rotation processes in each of NiFe layers could be observed separately. The presence of magnetic anisotropy in the magnetic layer effectively controls the behavior of magnetic domains. Theinteraction between the two NiFe layers of the film could be observed not so strong in the present experiment.展开更多
Exchange bias effect has been widely employed for various magnetic devices.The experimentally reported magnitude of exchange bias field is often smaller than that predicted theoretically,which is considered to be due ...Exchange bias effect has been widely employed for various magnetic devices.The experimentally reported magnitude of exchange bias field is often smaller than that predicted theoretically,which is considered to be due to the partly pinned spins of ferromagnetic layer by antiferromagnetic layer.However,mapping the distribution of pinned spins is challenging.In this work,we directly image the reverse domain nucleation and domain wall movement process in the exchange biased Co Fe B/Ir Mn bilayers by Lorentz transmission electron microscopy.From the in-situ experiments,we obtain the distribution mapping of the pinning strength,showing that only 1/6 of the ferromagnetic layer at the interface is strongly pinned by the antiferromagnetic layer.Our results prove the existence of an inhomogeneous pinning effect in exchange bias systems.展开更多
A novel method was reported to measure the remnant magnetic field in Lorentz mode in a FEI Tecnai F20 transmission electron microscope equipped with a Lorentz lens. The movement of the circle Bloch line of the cross-t...A novel method was reported to measure the remnant magnetic field in Lorentz mode in a FEI Tecnai F20 transmission electron microscope equipped with a Lorentz lens. The movement of the circle Bloch line of the cross-tie wall in Permalloy is used to measure the remnant magnetic field by tilting the specimen and adjusting the objective lens current. The remnant magnetic field is estimated to be about 17 Oe, in a direction opposite to that of the objective lens magnetic field. The remnant magnetic field can be compensated by adjusting the value of the objective lens current.展开更多
Magnetic skyrmions in multilayer structures are considered as a new direction for the next generation of storage due to their small size,strong anti-interference ability,high current-driven mobility,and compatibility ...Magnetic skyrmions in multilayer structures are considered as a new direction for the next generation of storage due to their small size,strong anti-interference ability,high current-driven mobility,and compatibility with existing spintronic technology.In this work,we present a tunable room temperature skyrmion platform based on multilayer stacks of MgO/FeNiB/Mo.We systematically studied the creation of magnetic skyrmions in MgO/FeNiB/Mo multilayer structures with perpendicular magnetic anisotropy(PMA).In these structures,the magnetic anisotropy changes from PMA to in-plane magnetic anisotropy(IMA)as the thickness of FeNiB layer increases.By adjusting the applied magnetic field and electric current,stable and high-density skyrmions can be obtained in the material system.The discovery of this material broadens the exploration of new materials for skyrmion and promotes the development of spintronic devices based on skyrmions.展开更多
High performance of the generation,stabilization and manipulation of magnetic skyrmions prompts the application of topological multilayers in spintronic devices.Skyrmions in synthetic antiferromagnets(SAF)have been co...High performance of the generation,stabilization and manipulation of magnetic skyrmions prompts the application of topological multilayers in spintronic devices.Skyrmions in synthetic antiferromagnets(SAF)have been considered as a promising alternative to overcome the limitations of ferromagnetic skyrmions,such as the skyrmion Hall effect and stray magnetic field.Here,by using the Lorentz transmission electron microscopy,the interconversion between the single domain,labyrinth domain and skyrmion state can be observed by the combined manipulation of electric current and magnetic field in a Hall balance(a SAF with the core structure of[Co/Pt]_(4)/NiO/[Co/Pt]_(4)showing perpendicular magnetic anisotropy).Furthermore,high-density room temperature skyrmions can be stabilized at zero field while the external stimulus is removed and the skyrmion density is tunable.The generation and manipulation method of skyrmions in Hall balance in this study opens up a promising way to engineer SAF-skyrmion-based memory devices.展开更多
文摘The microstructure change in thin NiFe/Cu/NiFe films during the magnetization process was observed by the Lorentz electronmicroscopy. TWo types of films were prepared: (1) one NiFe layer with anisotropy and the other layer without, and (2) both NiFe layershave anisotropy normal each other. The domain wall migration and magnetization rotation processes in each of NiFe layers could be observed separately. The presence of magnetic anisotropy in the magnetic layer effectively controls the behavior of magnetic domains. Theinteraction between the two NiFe layers of the film could be observed not so strong in the present experiment.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0201102)the National Natural Science Foundation of China(Grant No.51571208)+3 种基金the Instrument Developing Project of Chinese Academy of Sciences(Grant No.YZ201536)the Program for Key Science and Technology Innovation Team of Zhejiang Province,China(Grant No.2013TD08)the K C Wong Education Foundation(Grant No.rczx0800)the K C Wong Magna Fund in Ningbo University
文摘Exchange bias effect has been widely employed for various magnetic devices.The experimentally reported magnitude of exchange bias field is often smaller than that predicted theoretically,which is considered to be due to the partly pinned spins of ferromagnetic layer by antiferromagnetic layer.However,mapping the distribution of pinned spins is challenging.In this work,we directly image the reverse domain nucleation and domain wall movement process in the exchange biased Co Fe B/Ir Mn bilayers by Lorentz transmission electron microscopy.From the in-situ experiments,we obtain the distribution mapping of the pinning strength,showing that only 1/6 of the ferromagnetic layer at the interface is strongly pinned by the antiferromagnetic layer.Our results prove the existence of an inhomogeneous pinning effect in exchange bias systems.
基金supported by National Natural Science Foundation of China(No.10776037)
文摘A novel method was reported to measure the remnant magnetic field in Lorentz mode in a FEI Tecnai F20 transmission electron microscope equipped with a Lorentz lens. The movement of the circle Bloch line of the cross-tie wall in Permalloy is used to measure the remnant magnetic field by tilting the specimen and adjusting the objective lens current. The remnant magnetic field is estimated to be about 17 Oe, in a direction opposite to that of the objective lens magnetic field. The remnant magnetic field can be compensated by adjusting the value of the objective lens current.
基金Project supported by the National Basic Research Program of China (Grant No.2015CB921403)the National Key Research and Development Program of China (Grant No.2016YFA0300804)+2 种基金the National Natural Science Foundation of China (Grant Nos.51871236,11874408,51431009,92263202,and 51971240)the Science Center of the National Science Foundation of China (Grant No.52088101)the Strategic Priority Research Program (B,Grant No.XDB33030200)of the Chinese Academy of Sciences (CAS)。
文摘Magnetic skyrmions in multilayer structures are considered as a new direction for the next generation of storage due to their small size,strong anti-interference ability,high current-driven mobility,and compatibility with existing spintronic technology.In this work,we present a tunable room temperature skyrmion platform based on multilayer stacks of MgO/FeNiB/Mo.We systematically studied the creation of magnetic skyrmions in MgO/FeNiB/Mo multilayer structures with perpendicular magnetic anisotropy(PMA).In these structures,the magnetic anisotropy changes from PMA to in-plane magnetic anisotropy(IMA)as the thickness of FeNiB layer increases.By adjusting the applied magnetic field and electric current,stable and high-density skyrmions can be obtained in the material system.The discovery of this material broadens the exploration of new materials for skyrmion and promotes the development of spintronic devices based on skyrmions.
基金supported by the Science Center of the National Science Foundation of China(Grant No.52088101)the National Natural Science Foundation of China(Grant Nos.11874408,52130103,51901025,and 11904025)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB33030100)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.CAS Y201903)。
文摘High performance of the generation,stabilization and manipulation of magnetic skyrmions prompts the application of topological multilayers in spintronic devices.Skyrmions in synthetic antiferromagnets(SAF)have been considered as a promising alternative to overcome the limitations of ferromagnetic skyrmions,such as the skyrmion Hall effect and stray magnetic field.Here,by using the Lorentz transmission electron microscopy,the interconversion between the single domain,labyrinth domain and skyrmion state can be observed by the combined manipulation of electric current and magnetic field in a Hall balance(a SAF with the core structure of[Co/Pt]_(4)/NiO/[Co/Pt]_(4)showing perpendicular magnetic anisotropy).Furthermore,high-density room temperature skyrmions can be stabilized at zero field while the external stimulus is removed and the skyrmion density is tunable.The generation and manipulation method of skyrmions in Hall balance in this study opens up a promising way to engineer SAF-skyrmion-based memory devices.
