A low on-resistance （Ron,sp） integrable silicon-on-insulator （SOI） n-channel lateral double-diffused metal-oxide-semiconductor （LDMOS） is proposed and its mechanism is investigated by simulation. The LDMOS has t...A low on-resistance （Ron,sp） integrable silicon-on-insulator （SOI） n-channel lateral double-diffused metal-oxide-semiconductor （LDMOS） is proposed and its mechanism is investigated by simulation. The LDMOS has two features： the integration of a planar gate and an extended trench gate （double gates （DGs））; and a buried P-layer in the N-drift region, which forms a triple reduced surface field （RESURF） （TR） structure. The triple RESURF not only modulates the electric field distribution, but also increases N-drift doping, resulting in a reduced specific on-resistance （Ron,sp） and an improved breakdown voltage （BV） in the off-state. The DGs form dual conduction channels and, moreover, the extended trench gate widens the vertical conduction area, both of which further reduce the Ron,sp. The BV and Ron,sp are 328 V and 8.8 mΩ·cm^2, respectively, for a DG TR metal-oxide semiconductor field-effect transistor （MOSFET） by simulation. Compared with a conventional SOI LDMOS, a DG TR MOSFET with the same dimensional device parameters as those of the DG TR MOSFET reduces Ron,sp by 59% and increases BV by 6%. The extended trench gate synchronously acts as an isolation trench between the high-voltage device and low-voltage circuitry in a high-voltage integrated circuit, thereby saving the chip area and simplifying the fabrication processes.展开更多
A 4H-SiC power MOSFET with specific on-resistance of 3.4 mΩ·cm^2 and breakdown voltage exceeding 1.5 kV is designed and fabricated.Numerical simulations are carried out to optimize the electric field strength in...A 4H-SiC power MOSFET with specific on-resistance of 3.4 mΩ·cm^2 and breakdown voltage exceeding 1.5 kV is designed and fabricated.Numerical simulations are carried out to optimize the electric field strength in gate oxide and at the surface of the semiconductor material in the edge termination region.Additional n-type implantation in JFET region is implemented to reduce the specific on-resistance.The typical leakage current is less than 1μA at VDS=1.4 kV.Drain–source current reaches 50 A at VDS=0.75 V and VGS=20 V corresponding to an on-resistance of 15 mΩ.The typical gate threshold voltage is 2.6 V.展开更多
A novel Step Oxide-Bypassed （SOB） trench VDMOS structure is designed based on the Oxide-Bypassed concept proposed by Liang Y C. This structure is suitable for breakdown voltage below 300V to obtain ultra-low specifi...A novel Step Oxide-Bypassed （SOB） trench VDMOS structure is designed based on the Oxide-Bypassed concept proposed by Liang Y C. This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance. The main feature of this structure is the various thicknesses of sidewall oxide,which modulate electric field distribution in the drift region and the charge compensation effect. As a result, the breakdown voltage is increased no less than 20% due to the more uniform electric field of the drift region,while the specific on-resistance was reduced by 40%-60% for the step oxide bypassed compared with the oxide-bypassed structure.展开更多
A new ultra-low specific on-resistance （Ron,sp） vertical double diffusion metal-oxide-semiconductor field-effect tran- sistor （VDMOS） with continuous electron accumulation （CEA） layer, denoted as CEA-VDMOS, is p...A new ultra-low specific on-resistance （Ron,sp） vertical double diffusion metal-oxide-semiconductor field-effect tran- sistor （VDMOS） with continuous electron accumulation （CEA） layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration （Am）. In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp. Especially, the two PNjunctions within the trench gate support a high gate--drain voltage in the off-state and on-state, re- spectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS （CSJ-VDMOS） at the same high breakdown voltage （BV）.展开更多
A low specific on-resistance SO1 LDMOS with a novel junction field plate （JFP） is proposed and investigated theo- retically. The most significant feature of the JFP LDMOS is a PP-N junction field plate instead of a ...A low specific on-resistance SO1 LDMOS with a novel junction field plate （JFP） is proposed and investigated theo- retically. The most significant feature of the JFP LDMOS is a PP-N junction field plate instead of a metal field plate. The unique structure not only yields charge compensation between the JFP and the drift region, but also modulates the surface electric field. In addition, a trench gate extends to the buffed oxide layer （BOX） and thus widens the vertical conduction area. As a result, the breakdown voltage （BV） is improved and the specific on-resistance （Ron,sp） is decreased significantly. It is demonstrated that the BV of 306 V and the Ron,sp of 7.43 mΩ.cm2 are obtained for the JFP LDMOS. Compared with those of the conventional LDMOS with the same dimensional parameters, the BV is improved by 34.8%, and the Ron,sp is decreased by 56.6% simultaneously. The proposed JFP LDMOS exhibits significant superiority in terms of the trade-off between BV and Ron,sp. The novel JFP technique offers an alternative technique to achieve high blocking voltage and large current capacity for power devices.展开更多
The impact of alkyl dimethyl betaine (ADB) on the collection capacity of sodium oleate (NaOl) at low temperatures was evaluated using flotation tests at various scales. The low-temperature synergistic mechanism of ADB...The impact of alkyl dimethyl betaine (ADB) on the collection capacity of sodium oleate (NaOl) at low temperatures was evaluated using flotation tests at various scales. The low-temperature synergistic mechanism of ADB and NaOl was explored by infrared spectroscopy, X-ray photoelectron spectroscopy, surface tension measurement, foam performance test, and flotation reagent size measurement.The flotation tests revealed that the collector mixed with octadecyl dimethyl betaine (ODB) and NaOl in a mass ratio of 4:96 exhibited the highest collection capacity. The combined collector could increase the scheelite recovery by 3.48% at low temperatures of 8–12℃. This is particularly relevant in the Luanchuan area, which has the largest scheelite concentrate output in China. The results confirmed that ODB enhanced the collection capability of NaOl by improving the dispersion and foaming performance. Betaine can be introduced as an additive to NaOl to improve the recovery of scheelite at low temperatures.展开更多
An integrable silicon-on-insulator （SOl） power lateral MOSFET with a trench gate and a recessed drain （TGRD MOSFET） is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide （...An integrable silicon-on-insulator （SOl） power lateral MOSFET with a trench gate and a recessed drain （TGRD MOSFET） is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide （BOX） and the recessed drain reduce the specific on-resistance （Ron, sp） by widening the vertical conduction area and shortening the extra current path. The trench gate is extended as a field plate improves the electric field distribution. Breakdown voltage （BV） of 97 V and Ron, sp of 0.985 mf2-cm2 （l/os = 5 V） are obtained for a TGRD MOSFET with 6.5/xm half-cell pitch. Compared with the trench gate SOI MOSFET （TG MOSFET） and the conventional MOSFET, Ron＇ sp of the TGRD MOSFET decreases by 46% and 83% at the same BV, respectively. Compared with the SOI MOSFET with a trench gate and a trench drain （TGTD MOSFET）, BV of the TGRD MOSFET increases by 37% at the same Ron,sp.展开更多
A low-energy plasma electrolytic oxidation(LePEO)technique is developed to simultaneously improve energy efficiency and anti-corrosion.Ionic liquids(1-butyl-3-methylimidazole tetrafluoroborate(BmimBF_(4)))as sustainab...A low-energy plasma electrolytic oxidation(LePEO)technique is developed to simultaneously improve energy efficiency and anti-corrosion.Ionic liquids(1-butyl-3-methylimidazole tetrafluoroborate(BmimBF_(4)))as sustainable corrosion inhibitors are chosen to investigate the corrosion inhibition behavior of ionic liquid(ILs)during the LePEO process for LA91 magnesium-lithium(Mg-Li)alloy.Results show that the ionic liquid BmimBF_(4)participates in the LePEO coating formation process,causing an increment in coating thickness and surface roughness.The low conductivity of the ionic liquid is responsible for the voltage and breakdown voltage increases during the LePEO with IL process(LePEO-IL).After adding BmimBF_(4),corrosion current density decreases from 1.159×10^(−4)A·cm^(−2)to 8.143×10^(−6)A·cm^(−2).The impedance modulus increases to 1.048×10^(4)Ω·cm^(−2)and neutral salt spray remains intact for 24 h.The superior corrosion resistance of the LePEO coating assisted by ionic liquid could be mainly attributed to its compact and thick barrier layer and physical absorption of ionic liquid.The ionic liquid-assisted LePEO technique provides a promising approach to reducing energy consumption and improving film performance.展开更多
A novel Ga N-based vertical heterostructure field effect transistor（HFET） with nonuniform doping superjunctions（non-SJ HFET） is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance（RonA...A novel Ga N-based vertical heterostructure field effect transistor（HFET） with nonuniform doping superjunctions（non-SJ HFET） is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance（RonA） at no expense of breakdown voltage（BV）.The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars,which is different from that of the conventional Ga N-based vertical HFET with uniform doping superjunctions（un-SJ HFET）.A physically intrinsic mechanism for the nonuniform doping superjunction（non-SJ） to further reduce RonA at no expense of BV is investigated and revealed in detail.The design,related to the structure parameters of non-SJ,is optimized to minimize the RonA on the basis of the same BV as that of un-SJ HFET.Optimized simulation results show that the reduction in RonA depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ.The maximum reduction of more than 51% in RonA could be achieved with a BV of 1890 V.These results could demonstrate the superiority of non-SJ HFET in minimizing RonA and provide a useful reference for further developing the Ga N-based vertical HFETs.展开更多
A 700 V triple RESURF nLDMOS with a low specific on-resistance of 100 mΩ.cm^2 is designed. Compared with a conventional double RESURF nLDMOS whose P-type layer is located on the surface of the drift region, the P-typ...A 700 V triple RESURF nLDMOS with a low specific on-resistance of 100 mΩ.cm^2 is designed. Compared with a conventional double RESURF nLDMOS whose P-type layer is located on the surface of the drift region, the P-type layer of a triple RESURF nLDMOS is located within it. The difference between the locations of the P-type layer means that a triple RESURF nLDMOS has about a 30% lower specific on-resistance at the same given breakdown voltage of 700 V. Detailed research of the influences of various parameters on breakdown voltage, specific on-resistance, as well as process tolerance is involved. The results may provide guiding principles for the design of triple RESURF nLDMOS.展开更多
An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench（HK TG VDMOS） is proposed in this paper.The HK TG VDMOS features a hi...An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench（HK TG VDMOS） is proposed in this paper.The HK TG VDMOS features a high-k（HK） trench below the trench gate.Firstly,the extended HK trench not only causes an assistant depletion of the n-drift region,but also optimizes the electric field,which therefore reduces Ron,sp and increases the breakdown voltage（BV）.Secondly,the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration.Thirdly,compared with the superjunction（SJ） vertical double-diffused metal-oxide semiconductor（VDMOS）,the new device is simplified in fabrication by etching and filling the extended trench.The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩ·cm2 is obtained by simulation;its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%,in comparison with those of the conventional trench gate VDMOS（TG VDMOS） and conventional superjunction trench gate VDMOS（SJ TG CDMOS）.展开更多
Fast-charging and low temperature operation are of vital importance for the further development of lithium-ion batteries(LIBs),which is hindered by the utilization of conventional carbonate-based electrolytes due to t...Fast-charging and low temperature operation are of vital importance for the further development of lithium-ion batteries(LIBs),which is hindered by the utilization of conventional carbonate-based electrolytes due to their slow kinetics,narrow operating temperature and voltage range.Herein,an acetonitrile(AN)-based localized high-concentration electrolyte(LHCE)is proposed to retain liquid state and high ionic conductivity at ultra-low temperatures while possessing high oxidation stability.We originally reveal the excellent thermal shielding effect of non-solvating diluent to prevent the aggregation of Li^(+) solvates as temperature drops,maintaining the merits of fast Li transport and facile desolvation as at room temperature,which bestows the graphite electrode with remarkable low temperature performance(264 mA h g^(-1) at-20 C).Remarkably,an extremely high capacity retention of 97%is achieved for high-voltage high-energy graphite||NCM batteries after 250 cycles at-20 C,and a high capacity of 110 mA h g^(-1)(71%of its room-temperature capacity)is retained at-30°C.The study unveils the key role of the non-solvating diluents and provides instructive guidance in designing electrolytes towards fast-charging and low temperature LIBs.展开更多
Electrolyte design holds the greatest opportunity for the development of batteries that are capable of sub-zero temperature operation.To get the most energy storage out of the battery at low temperatures,improvements ...Electrolyte design holds the greatest opportunity for the development of batteries that are capable of sub-zero temperature operation.To get the most energy storage out of the battery at low temperatures,improvements in electrolyte chemistry need to be coupled with optimized electrode materials and tailored electrolyte/electrode interphases.Herein,this review critically outlines electrolytes’limiting factors,including reduced ionic conductivity,large de-solvation energy,sluggish charge transfer,and slow Li-ion transportation across the electrolyte/electrode interphases,which affect the low-temperature performance of Li-metal batteries.Detailed theoretical derivations that explain the explicit influence of temperature on battery performance are presented to deepen understanding.Emerging improvement strategies from the aspects of electrolyte design and electrolyte/electrode interphase engineering are summarized and rigorously compared.Perspectives on future research are proposed to guide the ongoing exploration for better low-temperature Li-metal batteries.展开更多
In this study,the extruded Mg-Zn-Mn-Ce-Ca alloy tube with a low compression anisotropy along the ED,45ED and TD was prepared.The effect of the second phases,initial texture and deformation behavior on this low mechani...In this study,the extruded Mg-Zn-Mn-Ce-Ca alloy tube with a low compression anisotropy along the ED,45ED and TD was prepared.The effect of the second phases,initial texture and deformation behavior on this low mechanical anisotropy was investigated.The results revealed that the alloy tube contains the high content(Mg1-xZnx)11Ce phase and the low content of Mg12Ce phase.These second phases are respectively incoherent and coherent with the Mg matrix,and their influence can be ignored.Additionally,the alloy tube exhibited a weak basal fiber texture,where the c-axis was aligned along the 0°∼30°tilt from TD to ED.Such a texture made the initial deformation(at 1.0%∼1.6%strain)of the three samples controlled by comparable basalslip.As deformation progressed(1.6∼9.0%strain),larger amounts of ETWs nucleated and gradually approached saturation in the three samples,re-orienting the c-axis to a 0°∼±30°deviation with respect to the loading directions.Meanwhile,the prismatic and pyramidal<c+a>slips replaced the dominant deformation progressively until fracture.Eventually,the similar deformation mechanisms determined by the weak initial texture in the three samples contribute to the comparable strain hardening rates,resulting in the low compressive anisotropy of the alloy tube.展开更多
A new high voltage trench lateral double-diffused metal–oxide semiconductor （LDMOS） with ultra-low specific onresistance （R on,sp ） is proposed. The structure features a dual gate （DG LDMOS）： a planar gate and...A new high voltage trench lateral double-diffused metal–oxide semiconductor （LDMOS） with ultra-low specific onresistance （R on,sp ） is proposed. The structure features a dual gate （DG LDMOS）： a planar gate and a trench gate inset in the oxide trench. Firstly, the dual gate can provide a dual conduction channel and reduce R on,sp dramatically. Secondly, the oxide trench in the drift region modulates the electric field distribution and reduces the cell pitch but still can maintain comparable breakdown voltage （BV）. Simulation results show that the cell pitch of the DG LDMOS can be reduced by 50% in comparison with that of conventional LDMOS at the equivalent BV; furthermore, R on,sp of the DG LDMOS can be reduced by 67% due to the smaller cell pitch and the dual gate.展开更多
In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loo...In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loop with the dynamic strength control(DSC),is proposed in this paper,which overcomes trade-offs inherent in conventional structures.The presented design addresses and resolves the large signal stability issue,which has been previously overlooked in the event-driven charge pump structure.This breakthrough allows for the full exploitation of the charge-pump structure's poten-tial,particularly in enhancing transient recovery.Moreover,a dynamic error amplifier is utilized to attain precise regulation of the steady-state output voltage,leading to favorable static characteristics.A prototype chip has been fabricated in 65 nm CMOS technology.The measurement results show that the proposed OCL-LDO achieves a 410 nA low quiescent current(IQ)and can recover within 30 ns under 200 mA/10 ns loading change.展开更多
A rice low temperature-induced albino variant was determined by the recessive ltia1 and ltia2 genes.LTIA1 and LTIA2 encode highly conserved mini-ribonucleasesⅢlocated in chloroplasts and expressed in aerial parts of ...A rice low temperature-induced albino variant was determined by the recessive ltia1 and ltia2 genes.LTIA1 and LTIA2 encode highly conserved mini-ribonucleasesⅢlocated in chloroplasts and expressed in aerial parts of the plant.At low temperature,LTIA1 and LTIA2 redundantly affect chlorophyll levels,non-photochemical quenching,photosynthetic quantum yield of PSⅡand seedling growth.LTIA1 and LTIA2 proteins are involved in splicing of atp F and the biogenesis of 16S and 23S rRNA in chloroplasts.Presence/absence variation of LTIA1,the ancestral copy,was found only in japonica but that of LTIA2 in all rice subgroups.Accessions with LTIA2 presence tended to be distributed more remote from the equator compared to those with LTIA2 absence.LTIA2 duplicated from LTIA1 at the early stage of divergence of the AA genome Oryza species but deleted againin O.nivara.In cultivated rice,absence of LTIA2 is derived from O.nivara.LTIA1 absence occurred more recently in japonica.展开更多
Emulsification is one of the important mechanisms of surfactant flooding. To improve oil recovery for low permeability reservoirs, a highly efficient emulsification oil flooding system consisting of anionic surfactant...Emulsification is one of the important mechanisms of surfactant flooding. To improve oil recovery for low permeability reservoirs, a highly efficient emulsification oil flooding system consisting of anionic surfactant sodium alkyl glucosyl hydroxypropyl sulfonate(APGSHS) and zwitterionic surfactant octadecyl betaine(BS-18) is proposed. The performance of APGSHS/BS-18 mixed surfactant system was evaluated in terms of interfacial tension, emulsification capability, emulsion size and distribution, wettability alteration, temperature-resistance and salt-resistance. The emulsification speed was used to evaluate the emulsification ability of surfactant systems, and the results show that mixed surfactant systems can completely emulsify the crude oil into emulsions droplets even under low energy conditions. Meanwhile,the system exhibits good temperature and salt resistance. Finally, the best oil recovery of 25.45% is achieved for low permeability core by the mixed surfactant system with a total concentration of 0.3 wt%while the molar ratio of APGSHS:BS-18 is 4:6. The current study indicates that the anionic/zwitterionic mixed surfactant system can improve the oil flooding efficiency and is potential candidate for application in low permeability reservoirs.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 609 76060)the National Key Laboratory of Analogue Integrated Circuit (Grant No. 9140C090304110C0905)
文摘A low on-resistance （Ron,sp） integrable silicon-on-insulator （SOI） n-channel lateral double-diffused metal-oxide-semiconductor （LDMOS） is proposed and its mechanism is investigated by simulation. The LDMOS has two features： the integration of a planar gate and an extended trench gate （double gates （DGs））; and a buried P-layer in the N-drift region, which forms a triple reduced surface field （RESURF） （TR） structure. The triple RESURF not only modulates the electric field distribution, but also increases N-drift doping, resulting in a reduced specific on-resistance （Ron,sp） and an improved breakdown voltage （BV） in the off-state. The DGs form dual conduction channels and, moreover, the extended trench gate widens the vertical conduction area, both of which further reduce the Ron,sp. The BV and Ron,sp are 328 V and 8.8 mΩ·cm^2, respectively, for a DG TR metal-oxide semiconductor field-effect transistor （MOSFET） by simulation. Compared with a conventional SOI LDMOS, a DG TR MOSFET with the same dimensional device parameters as those of the DG TR MOSFET reduces Ron,sp by 59% and increases BV by 6%. The extended trench gate synchronously acts as an isolation trench between the high-voltage device and low-voltage circuitry in a high-voltage integrated circuit, thereby saving the chip area and simplifying the fabrication processes.
基金supported by the National Science and Technology Major Project(No.2017YFB0102302)。
文摘A 4H-SiC power MOSFET with specific on-resistance of 3.4 mΩ·cm^2 and breakdown voltage exceeding 1.5 kV is designed and fabricated.Numerical simulations are carried out to optimize the electric field strength in gate oxide and at the surface of the semiconductor material in the edge termination region.Additional n-type implantation in JFET region is implemented to reduce the specific on-resistance.The typical leakage current is less than 1μA at VDS=1.4 kV.Drain–source current reaches 50 A at VDS=0.75 V and VGS=20 V corresponding to an on-resistance of 15 mΩ.The typical gate threshold voltage is 2.6 V.
文摘A novel Step Oxide-Bypassed （SOB） trench VDMOS structure is designed based on the Oxide-Bypassed concept proposed by Liang Y C. This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance. The main feature of this structure is the various thicknesses of sidewall oxide,which modulate electric field distribution in the drift region and the charge compensation effect. As a result, the breakdown voltage is increased no less than 20% due to the more uniform electric field of the drift region,while the specific on-resistance was reduced by 40%-60% for the step oxide bypassed compared with the oxide-bypassed structure.
基金supported by the National Natural Science Foundation of China(Grant Nos.61176069 and 61376079)the Fundamental Research Funds for the Central Universities,China(Grant No.ZYGX2014Z006)
文摘A new ultra-low specific on-resistance （Ron,sp） vertical double diffusion metal-oxide-semiconductor field-effect tran- sistor （VDMOS） with continuous electron accumulation （CEA） layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration （Am）. In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp. Especially, the two PNjunctions within the trench gate support a high gate--drain voltage in the off-state and on-state, re- spectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS （CSJ-VDMOS） at the same high breakdown voltage （BV）.
基金supported by the National Natural Science Foundation of China(Grant No.61376079)the Postdoctoral Science Foundation of China(GrantNo.2012T50771)the Postdoctoral Science Foundation of Chongqing City,China(Grant No.XM2012004)
文摘A low specific on-resistance SO1 LDMOS with a novel junction field plate （JFP） is proposed and investigated theo- retically. The most significant feature of the JFP LDMOS is a PP-N junction field plate instead of a metal field plate. The unique structure not only yields charge compensation between the JFP and the drift region, but also modulates the surface electric field. In addition, a trench gate extends to the buffed oxide layer （BOX） and thus widens the vertical conduction area. As a result, the breakdown voltage （BV） is improved and the specific on-resistance （Ron,sp） is decreased significantly. It is demonstrated that the BV of 306 V and the Ron,sp of 7.43 mΩ.cm2 are obtained for the JFP LDMOS. Compared with those of the conventional LDMOS with the same dimensional parameters, the BV is improved by 34.8%, and the Ron,sp is decreased by 56.6% simultaneously. The proposed JFP LDMOS exhibits significant superiority in terms of the trade-off between BV and Ron,sp. The novel JFP technique offers an alternative technique to achieve high blocking voltage and large current capacity for power devices.
基金financially supported by the National Natural Science Foundation of China (Nos.51904339 and No.51974364)the Key Laboratory of Hunan Province for Clean and Efficient Utilization of Strategic Calcium-containing Mineral Resources,China (No.2018TP1002)the Co-Innovation Centre for Clean and Efficient Utilization of Strategic Metal Mineral Resources,and the Postgraduate Independent Exploration and Innovation Project of Central South University,China (No.2018zzts224)。
文摘The impact of alkyl dimethyl betaine (ADB) on the collection capacity of sodium oleate (NaOl) at low temperatures was evaluated using flotation tests at various scales. The low-temperature synergistic mechanism of ADB and NaOl was explored by infrared spectroscopy, X-ray photoelectron spectroscopy, surface tension measurement, foam performance test, and flotation reagent size measurement.The flotation tests revealed that the collector mixed with octadecyl dimethyl betaine (ODB) and NaOl in a mass ratio of 4:96 exhibited the highest collection capacity. The combined collector could increase the scheelite recovery by 3.48% at low temperatures of 8–12℃. This is particularly relevant in the Luanchuan area, which has the largest scheelite concentrate output in China. The results confirmed that ODB enhanced the collection capability of NaOl by improving the dispersion and foaming performance. Betaine can be introduced as an additive to NaOl to improve the recovery of scheelite at low temperatures.
基金supported by the National Natural Science Foundation of China(Nos.60976060,61176069)the National Key Laboratory of AnalogIntegrated Circuit(NLAIC),China(No.9140C090304110C0905)the State Key Laboratory of Electronic Thin Films and Integrated Devices,China(No.CXJJ201004)
文摘An integrable silicon-on-insulator （SOl） power lateral MOSFET with a trench gate and a recessed drain （TGRD MOSFET） is proposed to reduce the on-resistance. Both of the trench gate extended to the buried oxide （BOX） and the recessed drain reduce the specific on-resistance （Ron, sp） by widening the vertical conduction area and shortening the extra current path. The trench gate is extended as a field plate improves the electric field distribution. Breakdown voltage （BV） of 97 V and Ron, sp of 0.985 mf2-cm2 （l/os = 5 V） are obtained for a TGRD MOSFET with 6.5/xm half-cell pitch. Compared with the trench gate SOI MOSFET （TG MOSFET） and the conventional MOSFET, Ron＇ sp of the TGRD MOSFET decreases by 46% and 83% at the same BV, respectively. Compared with the SOI MOSFET with a trench gate and a trench drain （TGTD MOSFET）, BV of the TGRD MOSFET increases by 37% at the same Ron,sp.
基金supported by the Natural Science Founda-tion of Beijing(Grant No.2182017,2202017).
文摘A low-energy plasma electrolytic oxidation(LePEO)technique is developed to simultaneously improve energy efficiency and anti-corrosion.Ionic liquids(1-butyl-3-methylimidazole tetrafluoroborate(BmimBF_(4)))as sustainable corrosion inhibitors are chosen to investigate the corrosion inhibition behavior of ionic liquid(ILs)during the LePEO process for LA91 magnesium-lithium(Mg-Li)alloy.Results show that the ionic liquid BmimBF_(4)participates in the LePEO coating formation process,causing an increment in coating thickness and surface roughness.The low conductivity of the ionic liquid is responsible for the voltage and breakdown voltage increases during the LePEO with IL process(LePEO-IL).After adding BmimBF_(4),corrosion current density decreases from 1.159×10^(−4)A·cm^(−2)to 8.143×10^(−6)A·cm^(−2).The impedance modulus increases to 1.048×10^(4)Ω·cm^(−2)and neutral salt spray remains intact for 24 h.The superior corrosion resistance of the LePEO coating assisted by ionic liquid could be mainly attributed to its compact and thick barrier layer and physical absorption of ionic liquid.The ionic liquid-assisted LePEO technique provides a promising approach to reducing energy consumption and improving film performance.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574112,61334002,61474091,and 61574110)the Natural Science Basic Research Plan in Shaanxi Province,China(Grant No.605119425012)
文摘A novel Ga N-based vertical heterostructure field effect transistor（HFET） with nonuniform doping superjunctions（non-SJ HFET） is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance（RonA） at no expense of breakdown voltage（BV）.The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars,which is different from that of the conventional Ga N-based vertical HFET with uniform doping superjunctions（un-SJ HFET）.A physically intrinsic mechanism for the nonuniform doping superjunction（non-SJ） to further reduce RonA at no expense of BV is investigated and revealed in detail.The design,related to the structure parameters of non-SJ,is optimized to minimize the RonA on the basis of the same BV as that of un-SJ HFET.Optimized simulation results show that the reduction in RonA depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ.The maximum reduction of more than 51% in RonA could be achieved with a BV of 1890 V.These results could demonstrate the superiority of non-SJ HFET in minimizing RonA and provide a useful reference for further developing the Ga N-based vertical HFETs.
基金supported by the National Natural Science Foundation of China(No.60906038)the Pre-Research Foundation,China(No. 9140A08010309DZ02)the Science-Technology Foundation for Young Scientist of University of Electronic Science and Technology of China(No.L08010301JX0830)
文摘A 700 V triple RESURF nLDMOS with a low specific on-resistance of 100 mΩ.cm^2 is designed. Compared with a conventional double RESURF nLDMOS whose P-type layer is located on the surface of the drift region, the P-type layer of a triple RESURF nLDMOS is located within it. The difference between the locations of the P-type layer means that a triple RESURF nLDMOS has about a 30% lower specific on-resistance at the same given breakdown voltage of 700 V. Detailed research of the influences of various parameters on breakdown voltage, specific on-resistance, as well as process tolerance is involved. The results may provide guiding principles for the design of triple RESURF nLDMOS.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 61176069 )the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062)
文摘An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench（HK TG VDMOS） is proposed in this paper.The HK TG VDMOS features a high-k（HK） trench below the trench gate.Firstly,the extended HK trench not only causes an assistant depletion of the n-drift region,but also optimizes the electric field,which therefore reduces Ron,sp and increases the breakdown voltage（BV）.Secondly,the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration.Thirdly,compared with the superjunction（SJ） vertical double-diffused metal-oxide semiconductor（VDMOS）,the new device is simplified in fabrication by etching and filling the extended trench.The HK TG VDMOS with BV = 172 V and Ron,sp = 0.85 mΩ·cm2 is obtained by simulation;its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%,in comparison with those of the conventional trench gate VDMOS（TG VDMOS） and conventional superjunction trench gate VDMOS（SJ TG CDMOS）.
基金supported by the National Natural Science Foundation of China (No.92372123)the Natural Science Foundation of Guangdong Province (No.2022B1515020005)the Department of Science and Technology of Guangdong Province (No.2020B0101030005)
文摘Fast-charging and low temperature operation are of vital importance for the further development of lithium-ion batteries(LIBs),which is hindered by the utilization of conventional carbonate-based electrolytes due to their slow kinetics,narrow operating temperature and voltage range.Herein,an acetonitrile(AN)-based localized high-concentration electrolyte(LHCE)is proposed to retain liquid state and high ionic conductivity at ultra-low temperatures while possessing high oxidation stability.We originally reveal the excellent thermal shielding effect of non-solvating diluent to prevent the aggregation of Li^(+) solvates as temperature drops,maintaining the merits of fast Li transport and facile desolvation as at room temperature,which bestows the graphite electrode with remarkable low temperature performance(264 mA h g^(-1) at-20 C).Remarkably,an extremely high capacity retention of 97%is achieved for high-voltage high-energy graphite||NCM batteries after 250 cycles at-20 C,and a high capacity of 110 mA h g^(-1)(71%of its room-temperature capacity)is retained at-30°C.The study unveils the key role of the non-solvating diluents and provides instructive guidance in designing electrolytes towards fast-charging and low temperature LIBs.
基金The work described in this paper was fully supported by a Grant from the City University of Hong Kong(Project No.9610641).
文摘Electrolyte design holds the greatest opportunity for the development of batteries that are capable of sub-zero temperature operation.To get the most energy storage out of the battery at low temperatures,improvements in electrolyte chemistry need to be coupled with optimized electrode materials and tailored electrolyte/electrode interphases.Herein,this review critically outlines electrolytes’limiting factors,including reduced ionic conductivity,large de-solvation energy,sluggish charge transfer,and slow Li-ion transportation across the electrolyte/electrode interphases,which affect the low-temperature performance of Li-metal batteries.Detailed theoretical derivations that explain the explicit influence of temperature on battery performance are presented to deepen understanding.Emerging improvement strategies from the aspects of electrolyte design and electrolyte/electrode interphase engineering are summarized and rigorously compared.Perspectives on future research are proposed to guide the ongoing exploration for better low-temperature Li-metal batteries.
基金supported by the National Natural Science Foundation of China(Nos.51974082,51901037)State Key Laboratory of Baiyunobo Rare Earth Resource Research and Comprehensive Utilization(No.2021H2279)Programme of Introducing Talents of Discipline Innovation to Universities 2.0(the 111 Project 2.0 of China,No.BP0719037).
文摘In this study,the extruded Mg-Zn-Mn-Ce-Ca alloy tube with a low compression anisotropy along the ED,45ED and TD was prepared.The effect of the second phases,initial texture and deformation behavior on this low mechanical anisotropy was investigated.The results revealed that the alloy tube contains the high content(Mg1-xZnx)11Ce phase and the low content of Mg12Ce phase.These second phases are respectively incoherent and coherent with the Mg matrix,and their influence can be ignored.Additionally,the alloy tube exhibited a weak basal fiber texture,where the c-axis was aligned along the 0°∼30°tilt from TD to ED.Such a texture made the initial deformation(at 1.0%∼1.6%strain)of the three samples controlled by comparable basalslip.As deformation progressed(1.6∼9.0%strain),larger amounts of ETWs nucleated and gradually approached saturation in the three samples,re-orienting the c-axis to a 0°∼±30°deviation with respect to the loading directions.Meanwhile,the prismatic and pyramidal<c+a>slips replaced the dominant deformation progressively until fracture.Eventually,the similar deformation mechanisms determined by the weak initial texture in the three samples contribute to the comparable strain hardening rates,resulting in the low compressive anisotropy of the alloy tube.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61176069)the National Key Laboratory of Analog Integrated Circuit,China (Grant No. 9140C090304110C0905)the Innovation Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices,China (Grant No. CXJJ201004)
文摘A new high voltage trench lateral double-diffused metal–oxide semiconductor （LDMOS） with ultra-low specific onresistance （R on,sp ） is proposed. The structure features a dual gate （DG LDMOS）： a planar gate and a trench gate inset in the oxide trench. Firstly, the dual gate can provide a dual conduction channel and reduce R on,sp dramatically. Secondly, the oxide trench in the drift region modulates the electric field distribution and reduces the cell pitch but still can maintain comparable breakdown voltage （BV）. Simulation results show that the cell pitch of the DG LDMOS can be reduced by 50% in comparison with that of conventional LDMOS at the equivalent BV; furthermore, R on,sp of the DG LDMOS can be reduced by 67% due to the smaller cell pitch and the dual gate.
基金supported by the National Natural Science Foundation of China under Grant 62274189the Natural Science Foundation of Guangdong Province,China,under Grant 2022A1515011054the Key Area R&D Program of Guangdong Province under Grant 2022B0701180001.
文摘In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loop with the dynamic strength control(DSC),is proposed in this paper,which overcomes trade-offs inherent in conventional structures.The presented design addresses and resolves the large signal stability issue,which has been previously overlooked in the event-driven charge pump structure.This breakthrough allows for the full exploitation of the charge-pump structure's poten-tial,particularly in enhancing transient recovery.Moreover,a dynamic error amplifier is utilized to attain precise regulation of the steady-state output voltage,leading to favorable static characteristics.A prototype chip has been fabricated in 65 nm CMOS technology.The measurement results show that the proposed OCL-LDO achieves a 410 nA low quiescent current(IQ)and can recover within 30 ns under 200 mA/10 ns loading change.
基金supported by Zhejiang Provincial Natural Science Foundation of China (LD24C130002)Scientific Research Foundation of China Jiliang University。
文摘A rice low temperature-induced albino variant was determined by the recessive ltia1 and ltia2 genes.LTIA1 and LTIA2 encode highly conserved mini-ribonucleasesⅢlocated in chloroplasts and expressed in aerial parts of the plant.At low temperature,LTIA1 and LTIA2 redundantly affect chlorophyll levels,non-photochemical quenching,photosynthetic quantum yield of PSⅡand seedling growth.LTIA1 and LTIA2 proteins are involved in splicing of atp F and the biogenesis of 16S and 23S rRNA in chloroplasts.Presence/absence variation of LTIA1,the ancestral copy,was found only in japonica but that of LTIA2 in all rice subgroups.Accessions with LTIA2 presence tended to be distributed more remote from the equator compared to those with LTIA2 absence.LTIA2 duplicated from LTIA1 at the early stage of divergence of the AA genome Oryza species but deleted againin O.nivara.In cultivated rice,absence of LTIA2 is derived from O.nivara.LTIA1 absence occurred more recently in japonica.
基金financially supported by National Natural Science Foundation of China(No.22302229)Beijing Municipal Excellent Talent Training Funds Youth Advanced Individual Project(No.2018000020124G163)。
文摘Emulsification is one of the important mechanisms of surfactant flooding. To improve oil recovery for low permeability reservoirs, a highly efficient emulsification oil flooding system consisting of anionic surfactant sodium alkyl glucosyl hydroxypropyl sulfonate(APGSHS) and zwitterionic surfactant octadecyl betaine(BS-18) is proposed. The performance of APGSHS/BS-18 mixed surfactant system was evaluated in terms of interfacial tension, emulsification capability, emulsion size and distribution, wettability alteration, temperature-resistance and salt-resistance. The emulsification speed was used to evaluate the emulsification ability of surfactant systems, and the results show that mixed surfactant systems can completely emulsify the crude oil into emulsions droplets even under low energy conditions. Meanwhile,the system exhibits good temperature and salt resistance. Finally, the best oil recovery of 25.45% is achieved for low permeability core by the mixed surfactant system with a total concentration of 0.3 wt%while the molar ratio of APGSHS:BS-18 is 4:6. The current study indicates that the anionic/zwitterionic mixed surfactant system can improve the oil flooding efficiency and is potential candidate for application in low permeability reservoirs.
