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NMOS晶体管电荷共享导致的SRAM单元单粒子翻转恢复效应研究
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作者 高珊 李洋 +4 位作者 郝礼才 赵强 彭春雨 蔺智挺 吴秀龙 《中国集成电路》 2024年第6期48-55,共8页
基于Synopsys公司的三维器件模拟软件TCAD,本文研究了NMOS晶体管电荷共享导致SRAM单元的单粒子翻转恢复(SEUR)效应。分析了NMOS晶体管电荷共享导致SEUR效应的物理机制,系统研究了NMOS晶体管偏置(如电源电压、P阱偏置电压)和工艺参数(如P... 基于Synopsys公司的三维器件模拟软件TCAD,本文研究了NMOS晶体管电荷共享导致SRAM单元的单粒子翻转恢复(SEUR)效应。分析了NMOS晶体管电荷共享导致SEUR效应的物理机制,系统研究了NMOS晶体管偏置(如电源电压、P阱偏置电压)和工艺参数(如P+深阱掺杂浓度、P阱接触距离)对线性能量传输翻转恢复阈值(LETrec)以及单粒子翻转脉冲宽度(PWrec)的影响。研究发现:PWrec随着电源电压的增大而增大;PWrec和LETrec随着P阱偏置电压的增大而减小;LETrec随着P+深阱掺杂浓度的增大而增大;PWrec随着P阱接触与NMOS晶体管之间距离的增大而增大,而LETrec随着P阱接触与NMOS晶体管之间距离增大而减小。本文研究结论有助于优化SRAM单元抗单粒子效应设计,尤其是基于SEUR效应的SRAM单元的抗辐照加固设计提供了理论指导。 展开更多
关键词 单粒子翻转恢复效应 sram 电荷共享 工艺参数
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Virtex-5系列SRAM型FPGA单粒子效应重离子辐照试验技术研究
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作者 赖晓玲 郭阳明 +2 位作者 巨艇 朱启 贾亮 《计算机测量与控制》 2024年第1期304-311,共8页
针对SRAM型FPGA在空间辐射环境下易发生单粒子效应,影响星载设备正常工作甚至导致功能中断的问题,开展了SRAM型FPGA单粒子效应地面辐照试验方法研究,提出了配置存储器(CRAM)和块存储器(BRAM)的单粒子翻转效应测试方法,并以Xilinx公司工... 针对SRAM型FPGA在空间辐射环境下易发生单粒子效应,影响星载设备正常工作甚至导致功能中断的问题,开展了SRAM型FPGA单粒子效应地面辐照试验方法研究,提出了配置存储器(CRAM)和块存储器(BRAM)的单粒子翻转效应测试方法,并以Xilinx公司工业级Virtex-5系列SRAM型FPGA为测试对象,设计了单粒子效应测试系统,开展了重离子辐照试验,获取了器件的单粒子闩锁试验数据和CRAM、BRAM以及典型用户电路三模冗余前后的单粒子翻转试验数据;最后利用空间环境模拟软件进行了在轨翻转率分析,基于CREME96模型计算得到XC5VFX130T器件配置存储器GEO轨道的单粒子翻转概率为6.41×10^(-7)次/比特·天。 展开更多
关键词 sram型FPGA 单粒子效应 单粒子翻转 单粒子闩锁 重离子辐照试验
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基于数据残留时间的SRAM-PUF预选算法
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作者 陈泽亮 孔德珠 +2 位作者 尹爱国 陈泽福 张培勇 《电子学报》 EI CAS CSCD 北大核心 2024年第5期1478-1487,共10页
静态随机存取存储器(Static Random-Access Memory,SRAM)物理不可克隆函数(Physical Unclonable Function,PUF)利用参数设计完全相同的晶体管在制造过程中存在的工艺偏差,生成每块芯片无法克隆的密钥响应.由于SRAM-PUF内部错误分布的随... 静态随机存取存储器(Static Random-Access Memory,SRAM)物理不可克隆函数(Physical Unclonable Function,PUF)利用参数设计完全相同的晶体管在制造过程中存在的工艺偏差,生成每块芯片无法克隆的密钥响应.由于SRAM-PUF内部错误分布的随机性,密钥重构需要使用纠错码,而纠错电路的面积与其纠错能力呈正相关,为了降低SRAM-PUF错误分布,减小纠错电路面积,本文通过对SRAM数据残留特性的研究,提出一种数据残留预选算法,对SRAM单元进行筛选,提高PUF响应稳定性,使用区块择优算法筛选SRAM区块,减小响应的分散度,以更短的时间和资源消耗生成SRAM-PUF响应,测试结果表明,在不同温度(-40℃~80℃)和±10%电压波动下,256位SRAM-PUF响应拥有99.8%的稳定性及1.9×10^(-8)的误码率,相对于通用的临时多数表决(Temporal Majority Voting,TMV)算法提升了1.7%的稳定性,降低2.1×10^(5)倍误码率,与1000次TMV相比,时间复杂度从O(2000n)线性降低到O(900n).经过72小时老化测试后,采用数据残留算法预选的SRAM-PUF稳定性仅下降0.2%. 展开更多
关键词 物理不可克隆函数 sram 预选算法 数据残留 临时多数表决
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一种同步流水线SRAM读写控制模型
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作者 李铁虎 黄丹 +1 位作者 罗华军 祁宗 《微电子学》 CAS 北大核心 2024年第2期228-234,共7页
设计了一种同步流水线静态随机存储器读写控制系统的行为级模型。分析了存储器芯片的控制信号和工作时序要求,利用Verilog硬件描述语言对存储器芯片的读写系统进行了行为级建模。系统包括主机、总控制器和存储器三部分,其中总控制器又... 设计了一种同步流水线静态随机存储器读写控制系统的行为级模型。分析了存储器芯片的控制信号和工作时序要求,利用Verilog硬件描述语言对存储器芯片的读写系统进行了行为级建模。系统包括主机、总控制器和存储器三部分,其中总控制器又包括信号源发生器和数据收发控制器两个子模块。利用Modelsim软件对系统行为级模型进行了仿真验证,结果表明系统控制模型在非猝发(常规)、线性猝发、交织猝发三种工作模式下均可对存储器进行正确读写操作。该模型将主机端源控制信号数量减至最少,极大简化了读写控制流程;采用系统时钟双沿对数据采样传输,提升了系统的稳定性。 展开更多
关键词 sram 读写控制系统 VERILOG硬件描述语言 行为级模型
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双埋氧绝缘体上硅SRAM铀离子单粒子效应研究
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作者 王春林 高见头 +5 位作者 刘凡宇 陈思远 王娟娟 王天琦 李博 倪涛 《现代应用物理》 2024年第4期40-46,58,共8页
随着集成电路技术的进步,提高电路的单粒子翻转(single event upset,SEU)阈值变得愈发困难。双埋氧层绝缘体上硅(double silicon-on-insulator,DSOI)技术为单粒子加固技术提供了新方法。利用哈尔滨工业大学空间地面模拟装置(space envir... 随着集成电路技术的进步,提高电路的单粒子翻转(single event upset,SEU)阈值变得愈发困难。双埋氧层绝缘体上硅(double silicon-on-insulator,DSOI)技术为单粒子加固技术提供了新方法。利用哈尔滨工业大学空间地面模拟装置(space environment simulation and research infrastructure,SESRI)产生的铀离子对中国科学院微电子研究所研制的DSOI静态随机存取存储器(static random access memory,SRAM)开展了SEU效应研究。铀离子是目前可获得的线性能量传递(linear energy transfer,LET)最高的重离子。2种不同SEU加固能力的DSOI 4 kbit SRAM试验结果显示,通过对NMOS和PMOS的背栅实施独立偏压控制,可实现DSOI SRAM电路抗SEU能力的宽范围调制。最优条件下,使用LET为118 MeV·cm ^(2)·mg^(-1)的铀离子,累积注量为1×10^(7) cm^(-2)时,被测器件无SEU发生。 展开更多
关键词 绝缘体上硅 双埋氧层绝缘体上硅 静态随机存储器 单粒子效应 单粒子翻转
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基于Back-n白光中子实验装置的SRAM翻转截面测量
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作者 刘毓萱 秋妍妍 +4 位作者 谭志新 易晗 贺永宁 赵小龙 樊瑞睿 《现代应用物理》 2024年第2期103-107,共5页
本文主要研究静态随机存取存储器(static random-access memory,SRAM)的单粒子效应翻转截面的测量方法。基于宽能谱白光中子束流,采用了一种操作更方便的SRAM翻转截面测量方法。在SRAM前面放置聚乙烯中子慢化材料改变入射到SRAM表面上... 本文主要研究静态随机存取存储器(static random-access memory,SRAM)的单粒子效应翻转截面的测量方法。基于宽能谱白光中子束流,采用了一种操作更方便的SRAM翻转截面测量方法。在SRAM前面放置聚乙烯中子慢化材料改变入射到SRAM表面上的中子能谱,利用模拟计算得到改变后的中子能谱。利用奇异值分解法求解翻转率的矩阵方程得到SRAM的翻转截面。结果表明在4~15 MeV的能量范围内,使用反角白光中子源测试的SRAM翻转截面信息和参考文献中使用单能中子源测试拟合的SRAM翻转截面信息基本吻合。 展开更多
关键词 中子能谱 准单能中子源 单粒子效应 sram翻转截面 奇异值分解
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Machine learning-assisted efficient design of Cu-based shape memory alloy with specific phase transition temperature 被引量:2
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作者 Mengwei Wu Wei Yong +2 位作者 Cunqin Fu Chunmei Ma Ruiping Liu 《International Journal of Minerals,Metallurgy and Materials》 SCIE EI CAS CSCD 2024年第4期773-785,共13页
The martensitic transformation temperature is the basis for the application of shape memory alloys(SMAs),and the ability to quickly and accurately predict the transformation temperature of SMAs has very important prac... The martensitic transformation temperature is the basis for the application of shape memory alloys(SMAs),and the ability to quickly and accurately predict the transformation temperature of SMAs has very important practical significance.In this work,machine learning(ML)methods were utilized to accelerate the search for shape memory alloys with targeted properties(phase transition temperature).A group of component data was selected to design shape memory alloys using reverse design method from numerous unexplored data.Component modeling and feature modeling were used to predict the phase transition temperature of the shape memory alloys.The experimental results of the shape memory alloys were obtained to verify the effectiveness of the support vector regression(SVR)model.The results show that the machine learning model can obtain target materials more efficiently and pertinently,and realize the accurate and rapid design of shape memory alloys with specific target phase transition temperature.On this basis,the relationship between phase transition temperature and material descriptors is analyzed,and it is proved that the key factors affecting the phase transition temperature of shape memory alloys are based on the strength of the bond energy between atoms.This work provides new ideas for the controllable design and performance optimization of Cu-based shape memory alloys. 展开更多
关键词 machine learning support vector regression shape memory alloys martensitic transformation temperature
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Fabrication and integration of photonic devices for phase-change memory and neuromorphic computing 被引量:1
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作者 Wen Zhou Xueyang Shen +2 位作者 Xiaolong Yang Jiangjing Wang Wei Zhang 《International Journal of Extreme Manufacturing》 SCIE EI CAS CSCD 2024年第2期2-27,共26页
In the past decade,there has been tremendous progress in integrating chalcogenide phase-change materials(PCMs)on the silicon photonic platform for non-volatile memory to neuromorphic in-memory computing applications.I... In the past decade,there has been tremendous progress in integrating chalcogenide phase-change materials(PCMs)on the silicon photonic platform for non-volatile memory to neuromorphic in-memory computing applications.In particular,these non von Neumann computational elements and systems benefit from mass manufacturing of silicon photonic integrated circuits(PICs)on 8-inch wafers using a 130 nm complementary metal-oxide semiconductor line.Chip manufacturing based on deep-ultraviolet lithography and electron-beam lithography enables rapid prototyping of PICs,which can be integrated with high-quality PCMs based on the wafer-scale sputtering technique as a back-end-of-line process.In this article,we present an overview of recent advances in waveguide integrated PCM memory cells,functional devices,and neuromorphic systems,with an emphasis on fabrication and integration processes to attain state-of-the-art device performance.After a short overview of PCM based photonic devices,we discuss the materials properties of the functional layer as well as the progress on the light guiding layer,namely,the silicon and germanium waveguide platforms.Next,we discuss the cleanroom fabrication flow of waveguide devices integrated with thin films and nanowires,silicon waveguides and plasmonic microheaters for the electrothermal switching of PCMs and mixed-mode operation.Finally,the fabrication of photonic and photonic–electronic neuromorphic computing systems is reviewed.These systems consist of arrays of PCM memory elements for associative learning,matrix-vector multiplication,and pattern recognition.With large-scale integration,the neuromorphic photonic computing paradigm holds the promise to outperform digital electronic accelerators by taking the advantages of ultra-high bandwidth,high speed,and energy-efficient operation in running machine learning algorithms. 展开更多
关键词 nanofabrication silicon photonics phase-change materials non-volatile photonic memory neuromorphic photonic computing
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Astrocytic endothelin-1 overexpression impairs learning and memory ability in ischemic stroke via altered hippocampal neurogenesis and lipid metabolism 被引量:5
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作者 Jie Li Wen Jiang +9 位作者 Yuefang Cai Zhenqiu Ning Yingying Zhou Chengyi Wang Sookja Ki Chung Yan Huang Jingbo Sun Minzhen Deng Lihua Zhou Xiao Cheng 《Neural Regeneration Research》 SCIE CAS CSCD 2024年第3期650-656,共7页
Vascular etiology is the second most prevalent cause of cognitive impairment globally.Endothelin-1,which is produced and secreted by endothelial cells and astrocytes,is implicated in the pathogenesis of stroke.However... Vascular etiology is the second most prevalent cause of cognitive impairment globally.Endothelin-1,which is produced and secreted by endothelial cells and astrocytes,is implicated in the pathogenesis of stroke.However,the way in which changes in astrocytic endothelin-1 lead to poststroke cognitive deficits following transient middle cerebral artery occlusion is not well understood.Here,using mice in which astrocytic endothelin-1 was overexpressed,we found that the selective overexpression of endothelin-1 by astrocytic cells led to ischemic stroke-related dementia(1 hour of ischemia;7 days,28 days,or 3 months of reperfusion).We also revealed that astrocytic endothelin-1 overexpression contributed to the role of neural stem cell proliferation but impaired neurogenesis in the dentate gyrus of the hippocampus after middle cerebral artery occlusion.Comprehensive proteome profiles and western blot analysis confirmed that levels of glial fibrillary acidic protein and peroxiredoxin 6,which were differentially expressed in the brain,were significantly increased in mice with astrocytic endothelin-1 overexpression in comparison with wild-type mice 28 days after ischemic stroke.Moreover,the levels of the enriched differentially expressed proteins were closely related to lipid metabolism,as indicated by Kyoto Encyclopedia of Genes and Genomes pathway analysis.Liquid chromatography-mass spectrometry nontargeted metabolite profiling of brain tissues showed that astrocytic endothelin-1 overexpression altered lipid metabolism products such as glycerol phosphatidylcholine,sphingomyelin,and phosphatidic acid.Overall,this study demonstrates that astrocytic endothelin-1 overexpression can impair hippocampal neurogenesis and that it is correlated with lipid metabolism in poststroke cognitive dysfunction. 展开更多
关键词 astrocytic endothelin-1 dentate gyrus differentially expressed proteins HIPPOCAMPUS ischemic stroke learning and memory deficits lipid metabolism neural stem cells NEUROGENESIS proliferation
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基于原补码实现的位串行SRAM存内计算
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作者 徐伟栋 娄冕 +2 位作者 李立 张凯 龚龙庆 《北京理工大学学报》 EI CAS CSCD 北大核心 2024年第10期1095-1104,共10页
针对目前大多数存内计算无法独立处理非卷积计算的问题,提出了一种将转置8T单元与基于向量的位串行存内运算相结合的通用混合型存内计算.采用原码一位乘、补码加法和溢出激活处理,可支持任意位宽的整数/小数及正/负数的乘累加操作,也可... 针对目前大多数存内计算无法独立处理非卷积计算的问题,提出了一种将转置8T单元与基于向量的位串行存内运算相结合的通用混合型存内计算.采用原码一位乘、补码加法和溢出激活处理,可支持任意位宽的整数/小数及正/负数的乘累加操作,也可单独完成池化和激活操作,为从神经网络到信号处理等软件算法的发展提供了必要的灵活性和可编程性,减少了数据在总线上的传输.提出的存内计算在1.2V和500MHz条件下对8位运算的吞吐量为71.3GOPs,能效为20.63TOPS/W,支持灵活位宽的卷积操作,同时减少了数据移动,提高了能效和整体性能. 展开更多
关键词 存内计算 深度神经网络 静态随机存取存储器 能效
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大容量SRAM的时序设计
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作者 李斌 曾健平 +1 位作者 陈君 徐磊 《工业控制计算机》 2024年第11期11-13,共3页
随着集成电路技术的迅速发展,SRAM的容量越来越大,其时序也愈发难以控制。对SRAM的六管BitCell结构进行了分析,详细介绍了SRAM的工作原理和设计思路,并且给出了设计的SRAM版图布局,重点分析和解决了大容量SRAM面临的时序挑战。
关键词 sram 时序电路 大容量
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Promotion of structural plasticity in area V2 of visual cortex prevents against object recognition memory deficits in aging and Alzheimer's disease rodents
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作者 Irene Navarro-Lobato Mariam Masmudi-Martín +8 位作者 Manuel F.López-Aranda Juan F.López-Téllez Gloria Delgado Pablo Granados-Durán Celia Gaona-Romero Marta Carretero-Rey Sinforiano Posadas María E.Quiros-Ortega Zafar U.Khan 《Neural Regeneration Research》 SCIE CAS CSCD 2024年第8期1835-1841,共7页
Memory deficit,which is often associated with aging and many psychiatric,neurological,and neurodegenerative diseases,has been a challenging issue for treatment.Up till now,all potential drug candidates have failed to ... Memory deficit,which is often associated with aging and many psychiatric,neurological,and neurodegenerative diseases,has been a challenging issue for treatment.Up till now,all potential drug candidates have failed to produce satisfa ctory effects.Therefore,in the search for a solution,we found that a treatment with the gene corresponding to the RGS14414protein in visual area V2,a brain area connected with brain circuits of the ventral stream and the medial temporal lobe,which is crucial for object recognition memory(ORM),can induce enhancement of ORM.In this study,we demonstrated that the same treatment with RGS14414in visual area V2,which is relatively unaffected in neurodegenerative diseases such as Alzheimer s disease,produced longlasting enhancement of ORM in young animals and prevent ORM deficits in rodent models of aging and Alzheimer’s disease.Furthermore,we found that the prevention of memory deficits was mediated through the upregulation of neuronal arbo rization and spine density,as well as an increase in brain-derived neurotrophic factor(BDNF).A knockdown of BDNF gene in RGS14414-treated aging rats and Alzheimer s disease model mice caused complete loss in the upregulation of neuronal structural plasticity and in the prevention of ORM deficits.These findings suggest that BDNF-mediated neuronal structural plasticity in area V2 is crucial in the prevention of memory deficits in RGS14414-treated rodent models of aging and Alzheimer’s disease.Therefore,our findings of RGS14414gene-mediated activation of neuronal circuits in visual area V2 have therapeutic relevance in the treatment of memory deficits. 展开更多
关键词 behavioral performance brain-derived neurotrophic factor cognitive dysfunction episodic memory memory circuit activation memory deficits memory enhancement object recognition memory prevention of memory loss regulator of G protein signaling
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基于ALO-BP神经网络的SRAM读时序预测
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作者 柴永剑 张立军 +2 位作者 严雨灵 谢东东 马利军 《电子设计工程》 2024年第8期82-86,91,共6页
针对芯片设计中的后仿流程采用的时序分析用时过长,且传统回归模型预测出的时序值精确度较低等问题,提出一种基于蚁狮优化(Ant Lion Optimizer,ALO)算法的反向传播(Back Propagation,BP)神经网络的读时序预测方法。对14 nm SRAM芯片进... 针对芯片设计中的后仿流程采用的时序分析用时过长,且传统回归模型预测出的时序值精确度较低等问题,提出一种基于蚁狮优化(Ant Lion Optimizer,ALO)算法的反向传播(Back Propagation,BP)神经网络的读时序预测方法。对14 nm SRAM芯片进行表征,生成对应的liberty文件,提取其中的典型特征和时序参数并进行量化和归一化处理,形成相应的训练测试集。利用BP神经网络的自适应学习能力对数据集进行仿真训练,确定最优隐含层数;针对训练过程中对网络初始值非常依赖这一问题,采用蚁狮优化算法寻找均方误差最小时的网络初始权值,同时对比多种预测方法,对仿真方法和结果进行分析。实验结果表明,该模型收敛速度快、预测精度高,能对读时序进行有效预测。 展开更多
关键词 sram BP神经网络 ALO算法 读时序
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Between the City and Images:An Analysis of Mainstream Media’s Paths of Constructing the Cultural Memory of a City:Taking Chengdu Radio and Television’s“Hi Chengdu”as an Example 被引量:1
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作者 Ding Ran Shi Lei 《Contemporary Social Sciences》 2024年第2期97-111,共15页
Mainstream media play a crucial role in constructing the cultural memory of a city.This study used 319 short videos released by“Hi Chengdu,”a new media product of Chengdu Radio and Television,as samples.Based on the... Mainstream media play a crucial role in constructing the cultural memory of a city.This study used 319 short videos released by“Hi Chengdu,”a new media product of Chengdu Radio and Television,as samples.Based on the grounded theory,a research framework encompassing“content,technology,and discourse”was established to explore the paths through which mainstream media construct the cultural memory.Regarding content,this paper emphasized temporal and spatial contexts and urban spaces,delving deep into the themes of the cultural memory and vehicles for it.In terms of technology,this paper discussed the practice of leveraging audio/visual-mode discourse to stitch together the impressions of a city and evoke emotional resonance to create a“flow”of memory.As for discourse,this paper looked at the performance of a communication ritual to frame concepts and shape urban identity.It is essential to break free from conventional thinking and leverage local culture as the primary driving force to further boost a city’s productivity,in order to excel in cultural communication. 展开更多
关键词 the cultural memory of a city short videos the grounded theory Chengdu Radio and Television “Hi Chengdu”
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The Effect of the Menstrual Cycle on Cognitive Performance: Spatial Reasoning, Visual & Numerical Memory
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作者 Anusha Asim Rifah Maryam +4 位作者 Zahra Sultan Areej Shahid Fatima Yousaf Ishika Khandelwal Isra Allana 《Journal of Behavioral and Brain Science》 2024年第10期276-296,共21页
The menstrual cycle has been a topic of interest in relation to behavior and cognition for many years, with historical beliefs associating it with cognitive impairment. However, recent research has challenged these be... The menstrual cycle has been a topic of interest in relation to behavior and cognition for many years, with historical beliefs associating it with cognitive impairment. However, recent research has challenged these beliefs and suggested potential positive effects of the menstrual cycle on cognitive performance. Despite these emerging findings, there is still a lack of consensus regarding the impact of the menstrual cycle on cognition, particularly in domains such as spatial reasoning, visual memory, and numerical memory. Hence, this study aimed to explore the relationship between the menstrual cycle and cognitive performance in these specific domains. Previous studies have reported mixed findings, with some suggesting no significant association and others indicating potential differences across the menstrual cycle. To contribute to this body of knowledge, we explored the research question of whether the menstrual cycles have a significant effect on cognition, particularly in the domains of spatial reasoning, visual and numerical memory in a regionally diverse sample of menstruating females. A total of 30 menstruating females from mixed geographical backgrounds participated in the study, and a repeated measures design was used to assess their cognitive performance in two phases of the menstrual cycle: follicular and luteal. The results of the study revealed that while spatial reasoning was not significantly related to the menstrual cycle (p = 0.256), both visual and numerical memory had significant positive associations (p < 0.001) with the luteal phase. However, since the effect sizes were very small, the importance of this relationship might be commonly overestimated. Future studies could thus entail designs with larger sample sizes, including neuro-biological measures of menstrual stages, and consequently inform competent interventions and support systems. 展开更多
关键词 Menstrual Health Menstrual Cycle MENSTRUATION Mental Health COGNITION Spatial Reasoning Visual memory Numerical memory
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The Impact of Opioid Drugs on Memory and Other Cognitive Functions: A Review
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作者 Mason T. Bennett Yuliya Modna Dev Kumar Shah 《Journal of Biosciences and Medicines》 2024年第4期264-287,共24页
Background and Purpose: Opioids, used for centuries to alleviate pain, have become a double-edged sword. While effective, they come with a host of adverse effects, including memory and cognition impairment. This revie... Background and Purpose: Opioids, used for centuries to alleviate pain, have become a double-edged sword. While effective, they come with a host of adverse effects, including memory and cognition impairment. This review delves into the impact of opioid drugs on cognitive functions, explores underlying mechanisms, and investigates their prevalence in both medical care and illicit drug use. The ultimate goal is to find ways to mitigate their potential harm and address the ongoing opioid crisis. Methods: We sourced data from PubMed and Google Scholar, employing search combinations like “opioids,” “memory,” “cognition,” “amnesia,” “cognitive function,” “executive function,” and “inhibition.” Our focus was on English-language articles spanning from the inception of these databases up to the present. Results: The literature consistently reveals that opioid use, particularly at high doses, adversely affects memory and other cognitive functions. Longer deliberation times, impaired decision-making, impulsivity, and behavioral disorders are common consequences. Chronic high-dose opioid use is associated with conditions such as amnesiac syndrome (OAS), post-operative cognitive dysfunction (POCD), neonatal abstinence syndrome (NAS), depression, anxiety, sedation, and addiction. Alarming trends show increased opioid use over recent decades, amplifying the risk of these outcomes. Conclusion: Opioids cast a shadow over memory and cognitive function. These effects range from amnesiac effects, lessened cognitive function, depression, and more. Contributing factors include over-prescription, misuse, misinformation, and prohibition policies. Focusing on correct informational campaigns, removing punitive policies, and focusing on harm reduction strategies have been shown to lessen the abuse and use of opioids and thus helping to mitigate the adverse effects of these drugs. Further research into the impacts of opioids on cognitive abilities is also needed as they are well demonstrated in the literature, but the mechanism is not often completely understood. 展开更多
关键词 OPIOIDS memory COGNITION PAIN
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基于RS和BCH码的SRAM-PUF密钥提取方法及性能分析
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作者 周昱 于宗光 《计算机工程》 CAS CSCD 北大核心 2024年第7期187-193,共7页
物理不可克隆函数(PUF)是芯片制造过程中随机偏差形成的唯一和不可复制的物理指纹,使用这个特征可以鉴别各个芯片,然而PUF芯片因环境变化会影响输出,导致在认证应用时可能失败。介绍了模糊提取器的密钥提取方法,通过在静态随机存取存储... 物理不可克隆函数(PUF)是芯片制造过程中随机偏差形成的唯一和不可复制的物理指纹,使用这个特征可以鉴别各个芯片,然而PUF芯片因环境变化会影响输出,导致在认证应用时可能失败。介绍了模糊提取器的密钥提取方法,通过在静态随机存取存储器(SRAM)-PUF芯片中加入里德-所罗门(RS)硬解码,在认证系统中加入BCH软解码模块,纠正PUF在一定范围内变化来确保通过认证,并对SRAM-PUF电路在三温下进行实验分析。实验结果表明,SRAM-PUF电路的PUF点分布有较好的均衡性,在常温时可靠性接近100%,在低温条件下可靠性范围为98.84%~100%,在高温条件下,可靠性范围为97.77%~99%,当RS码和BCH码设计的纠错能力大于PUF可靠性时能够通过认证。 展开更多
关键词 物理不可克隆函数 静态随机存取存储器 模糊提取器 里德-所罗门码 BCH码
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Enhanced Memory-Safe Linux Security Modules (eLSMs) for Improving Security of Docker Containers for Data Centers
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作者 Juan Martinez Delbugio Vijay K. Madisetti 《Journal of Software Engineering and Applications》 2024年第5期259-269,共11页
The adoption of Docker containers has revolutionized software deployment by providing a lightweight and efficient way to isolate applications in data centers. However, securing these containers, especially when handli... The adoption of Docker containers has revolutionized software deployment by providing a lightweight and efficient way to isolate applications in data centers. However, securing these containers, especially when handling sensitive data, poses significant challenges. Traditional Linux Security Modules (LSMs) such as SELinux and AppArmor have limitations in providing fine-grained access control to files within containers. This paper presents a novel approach using eBPF (extended Berkeley Packet Filter) to implement a LSM that focuses on file-oriented access control within Docker containers. The module allows the specification of policies that determine which programs can access sensitive files, providing enhanced security without relying solely on the host operating system’s major LSM. 展开更多
关键词 DOCKER LSM MAC RUST memory Safe Languages
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Design and implementation of dual-mode configurable memory architecture for CNN accelerator
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作者 山蕊 LI Xiaoshuo +1 位作者 GAO Xu HUO Ziqing 《High Technology Letters》 EI CAS 2024年第2期211-220,共10页
With the rapid development of deep learning algorithms,the computational complexity and functional diversity are increasing rapidly.However,the gap between high computational density and insufficient memory bandwidth ... With the rapid development of deep learning algorithms,the computational complexity and functional diversity are increasing rapidly.However,the gap between high computational density and insufficient memory bandwidth under the traditional von Neumann architecture is getting worse.Analyzing the algorithmic characteristics of convolutional neural network(CNN),it is found that the access characteristics of convolution(CONV)and fully connected(FC)operations are very different.Based on this feature,a dual-mode reronfigurable distributed memory architecture for CNN accelerator is designed.It can be configured in Bank mode or first input first output(FIFO)mode to accommodate the access needs of different operations.At the same time,a programmable memory control unit is designed,which can effectively control the dual-mode configurable distributed memory architecture by using customized special accessing instructions and reduce the data accessing delay.The proposed architecture is verified and tested by parallel implementation of some CNN algorithms.The experimental results show that the peak bandwidth can reach 13.44 GB·s^(-1)at an operating frequency of 120 MHz.This work can achieve 1.40,1.12,2.80 and 4.70 times the peak bandwidth compared with the existing work. 展开更多
关键词 distributed memory structure neural network accelerator reconfigurable arrayprocessor configurable memory structure
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Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance
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作者 Yang Feng Zhaohui Sun +6 位作者 Yueran Qi Xuepeng Zhan Junyu Zhang Jing Liu Masaharu Kobayashi Jixuan Wu Jiezhi Chen 《Journal of Semiconductors》 EI CAS CSCD 2024年第1期33-37,共5页
With the rapid development of machine learning,the demand for high-efficient computing becomes more and more urgent.To break the bottleneck of the traditional Von Neumann architecture,computing-in-memory(CIM)has attra... With the rapid development of machine learning,the demand for high-efficient computing becomes more and more urgent.To break the bottleneck of the traditional Von Neumann architecture,computing-in-memory(CIM)has attracted increasing attention in recent years.In this work,to provide a feasible CIM solution for the large-scale neural networks(NN)requiring continuous weight updating in online training,a flash-based computing-in-memory with high endurance(10^(9) cycles)and ultrafast programming speed is investigated.On the one hand,the proposed programming scheme of channel hot electron injection(CHEI)and hot hole injection(HHI)demonstrate high linearity,symmetric potentiation,and a depression process,which help to improve the training speed and accuracy.On the other hand,the low-damage programming scheme and memory window(MW)optimizations can suppress cell degradation effectively with improved computing accuracy.Even after 109 cycles,the leakage current(I_(off))of cells remains sub-10pA,ensuring the large-scale computing ability of memory.Further characterizations are done on read disturb to demonstrate its robust reliabilities.By processing CIFAR-10 tasks,it is evident that~90%accuracy can be achieved after 109 cycles in both ResNet50 and VGG16 NN.Our results suggest that flash-based CIM has great potential to overcome the limitations of traditional Von Neumann architectures and enable high-performance NN online training,which pave the way for further development of artificial intelligence(AI)accelerators. 展开更多
关键词 NOR flash memory computing-in-memory ENDURANCE neural network online training
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