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Challenges of Process Technology in 32nm Technology Node 被引量:1
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作者 吴汉明 王国华 +1 位作者 黄如 王阳元 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第9期1637-1653,共17页
According to the international technology roadmap for semiconductors (ITRS),32nm technology node will be introduced around 2009. Scaling of CMOS logic devices from 45 to 32nm node has come across significant barrier... According to the international technology roadmap for semiconductors (ITRS),32nm technology node will be introduced around 2009. Scaling of CMOS logic devices from 45 to 32nm node has come across significant barriers. Overcoming these pitch-scaling induced barriers requires integrating the most advanced process technologies into product manufacturing. This paper reviews and discusses new technology applications that could be potentially integrated into 32nm node in the following areas:extension of immersion lithography,mobility enhancement substrate technology,metal/ high-k (MHK) gate stack, ultra-shallow junction (USJ) and other strain enhancement engineering methods, including stress proximity effect (SPT), dual stress liner (DSL), stress memorization technique (SMT), high aspect ratio process (HARP) for STI and PMD,embedded SiGe (for pFET) and SiC (for nFET) source/drain (S/D) using selective epitaxial growth (SEG) method,metallization for middle of line (MOL) and back-end of line (BEOL) ,and ultra low-k (ULK) integration. 展开更多
关键词 CMOS technology 32nm technology node mobility enhancement metal gate/high k dielectrics ultra low k dielectrics
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A Novel 4T nMOS-Only SRAM Cell in 32nm Technology Node
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作者 张万成 吴南健 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第10期1917-1921,共5页
This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator (SO1) technology node. It consists of two access transistors and two pull-down tran... This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator (SO1) technology node. It consists of two access transistors and two pull-down transistors. The pull-down transistors have larger channel length than the access transistors. Due to the significant short channel effect of small-size MOS transistors, the access transistors have much larger leakage current than the pull-down transistors,enabling the SRAM cell to maintain logic "1" while in standby. The storage node voltages of the cell are fed back to the back-gates of the access transistors,enabling the stable "read" operation of the cell. The use of back-gate feedback also helps to im- prove the static noise margin (SNM) of the cell. The proposed SRAM cell has smaller area than conventional bulk 6T SRAM cells and 4T SRAM cells. The speed and power dissipation of the SRAM cell are simulated and discussed. The SRAM cell can operate with a 0. 5V supply voltage. 展开更多
关键词 SRAM cell SOI 4T-SRAM 32nm technology node
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DC Gain Analysis of Scaled CMOS Op Amp in Sub-100 nm Technology Nodes:A Research Based on Channel Length Modulation Effect
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作者 程嘉 蒋建飞 蔡琪玉 《Journal of Shanghai Jiaotong university(Science)》 EI 2009年第5期613-619,共7页
Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field ... Metal-oxide-semiconductor field effect transistor(MOSFET) intrinsic gain degradation caused by channel length modulation(CLM) effect is examined.A simplified model based on Berkeley short-channel insulator-gate field effect transistor model version 4(BSIM4) current expression for sub-100 nm MOSFET intrinsic gain is deduced,which only needs a few technology parameters.With this transistor intrinsic gain model,complementary metal-oxide-semiconductor(CMOS) operational amplifier(op amp) DC gain could be predicted.A two-stage folded cascode op amp is used as an example in this work.Non-minimum length device is used to improve the op amp DC gain.An improvement of 20 dB is proved when using doubled channel length design.Optimizing transistor bias condition and using advanced technology with thinner gate dielectric thickness and shallower source/drain junction depth can also increase the op amp DC gain.After these,a full op amp DC gain scaling roadmap is proposed,from 130 nm technology node to 32 nm technology node.Five scaled op amps are built and their DC gains in simulation roll down from 69.6 to 41.1 dB.Simulation shows transistors biased at higher source-drain voltage will have more impact on the op amp DC gain scaling over technology.The prediction based on our simplified gain model agrees with SPICE simulation results. 展开更多
关键词 analog circuits complementary metal-oxide-semiconductor (CMOS) analog integrated circuits MODELING operational amplifiers simulation technology node
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AN EFFECTIVE DETAILED ROUTING ALGORITHM CONSIDERING ADVANCED TECHNOLOGY NODES
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作者 Xiqiong Bai Dixiu Xiao +4 位作者 Jianli Chen Wenxing Zhu Yadong Zhang Taotao Lu Lifeng Wu 《Annals of Applied Mathematics》 2020年第1期31-47,共17页
Detailed routing has become much challenging in modern circuit designs due to the extreme scaling of chip size and the complicated design rules.In this paper,we give an effective algorithm for detailed routing conside... Detailed routing has become much challenging in modern circuit designs due to the extreme scaling of chip size and the complicated design rules.In this paper,we give an effective algorithm for detailed routing considering advanced technology nodes.First,we present a valid pin-access candidates generation technology for handling complex pin shapes.Then,we propose a tree-based nets components selection algorithm to decide connecting order for multiple nets components.Finally,combined with global routing results and advanced technology nodes,an initial routing results optimization algorithm is presented to achieve the final detailed routing results.Experimental results on industry benchmarks show that,our proposed algorithm not only achieves 100%routability on real industrial cases in a reasonable runtime,but also optimizes total wirelength,total vias and other advanced technology nodes simultaneously. 展开更多
关键词 detailed routing advanced technology nodes pin-access total vias
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Challenges of 22 nm and beyond CMOS technology 被引量:8
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作者 HUANG Ru WU HanMing +8 位作者 KANG JinFeng XIAO DeYuan SHI XueLong AN Xia TIAN Yu WANG RunSheng ZHANG LiangLiang ZHANG Xing WANG YangYuan 《Science in China(Series F)》 2009年第9期1491-1533,共43页
It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technol... It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new device architectures, high K/metal gate (HK/MG) stack and integration technology, mobility enhancement technologies, source/drain engineering and advanced copper interconnect technology with ultra-low-k process. 展开更多
关键词 CMOS technology 22 nm technology node device architectures metal gate^high K dielectrics ultra low K dielectrics
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