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A novel one-time-programmable memory unit based on Schottky-type p-GaN diode
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作者 Chao Feng Xinyue Dai +4 位作者 Qimeng Jiang Sen Huang Jie Fan Xinhua Wang Xinyu Liu 《Journal of Semiconductors》 EI CAS CSCD 2024年第3期53-57,共5页
In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state throu... In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration. 展开更多
关键词 wide-bandgap semiconductor one-time programmable Schottky-type p-GaN diode read-only memory device
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Design of 32 kbit one-time programmable memory for microcontroller units 被引量:1
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作者 JEON Hwang-gon CHOI In-hwa +1 位作者 HA Pan-bong KIM Young-hee 《Journal of Central South University》 SCIE EI CAS 2012年第12期3475-3483,共9页
A 32 kbit OTP(one-time programmable)memory for MCUs(micro-controller units)used in remote controllers was designed.This OTP memory is used for program and data storage.It is required to apply 5.5V to BL(bit-line)and 1... A 32 kbit OTP(one-time programmable)memory for MCUs(micro-controller units)used in remote controllers was designed.This OTP memory is used for program and data storage.It is required to apply 5.5V to BL(bit-line)and 11V to WL(word-line)for a OTP cell of 0.35μm ETOX(EEPROM tunnel oxide)type by MagnaChip.We use 5V transistors on column data paths to reduce the area of column data paths since they require small areas.In addition,we secure device reliability by using HV(high-voltage)transistors in the WL driver.Furthermore,we change from a static logic to a dynamic logic used for the WL driver in the core circuit.Also,we optimize the WD(write data)switch circuit.Thus,we can implement them with a small-area design.In addition,we implement the address predecoder with a small-area logic circuit.The area of the designed 32 kbit OTP with 5V and HV devices is 674.725μm×258.75μm(=0.1745mm2)and is 56.3% smaller than that using 3.3V devices. 展开更多
关键词 one-time programmable memory micro controller unit EEPROM tunnel oxide small-area
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Design of 32-bit differential paired eFuse OTP memory in a form of two-dimensional array
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作者 KIM Yoon-kyu JANG Ji-hye +4 位作者 YOON Geon-soo LEE Dong-hoon HA Man-yeong HA Pan-bong KIM Young-hee 《Journal of Central South University》 SCIE EI CAS 2012年第12期3484-3491,共8页
A differential paired eFuse OTP(one-time programmable)memory cell which can be configured into a 2D(two-dimensional)eFuse cell array was proposed.The sensible resistance of a programmed eFuse link is a half smaller th... A differential paired eFuse OTP(one-time programmable)memory cell which can be configured into a 2D(two-dimensional)eFuse cell array was proposed.The sensible resistance of a programmed eFuse link is a half smaller than that of the single-ended counterpart and BL datum can be sensed without a reference voltage.With this 2D array of differential paired eFuse OTP memory cells,we design a 32-bit eFuse OTP memory IP.We use a sense amplifier based D F/F circuit as the BL(bit-line)SA(sense amplifier)and design a sensing margin test circuit with a variable pull-up load.It is confirmed by the function test that the designed 32-bit OTP memory IP functions normally on 30 sample dies. 展开更多
关键词 eFuse one-time programmable memory 2-dimensional array
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一次性可编程存储器的数据保持特性建模及分析
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作者 钟岱山 王美玉 +3 位作者 陈志涛 张有志 叶继兴 朱友华 《微电子学》 CAS 北大核心 2024年第2期346-350,共5页
基于300 mm 0.18μm MS 5 V工艺平台设计并流片了1k×16一次性可编程OTP器件,并对存储单元的结构、工作原理及工艺等可能影响数据保持寿命的因素进行了分析。根据Arrhenius寿命模型对不同样品设置了高温老化实验测试,收集数据并对OT... 基于300 mm 0.18μm MS 5 V工艺平台设计并流片了1k×16一次性可编程OTP器件,并对存储单元的结构、工作原理及工艺等可能影响数据保持寿命的因素进行了分析。根据Arrhenius寿命模型对不同样品设置了高温老化实验测试,收集数据并对OTP器件的保持特性进行建模。通过225℃、250℃和275℃条件下的高温老化加速实验,拟合样品最大数据保持时间曲线。在生产过程中可能出现的最差产品条件下,对1/(kT)与数据保持时间曲线进行数学拟合,计算在不同失效条件下的浮栅电荷泄漏的激活能和最大数据保持时间。 展开更多
关键词 一次性可编程存储器 嵌入式非易失性存储器 数据保持寿命 加速老化实验 Arrhenius模型 激活能
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基于电容结构的α-SiGe∶H膜电学退化特性
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作者 郑若成 吴素贞 +3 位作者 洪根深 王印权 徐海铭 吴建伟 《微纳电子技术》 北大核心 2020年第7期526-531,576,共7页
针对航天一次可编程(OTP)存储器高可靠应用需求,基于电容结构和肖特基接触模型,分析得出α-SiGe∶H膜退化前电流传输机制较好地符合热电子发射-扩散模型,并计算得到零偏α-SiGe∶H/TiW界面肖特基势垒高度为0.41 eV。通过实验发现,在电... 针对航天一次可编程(OTP)存储器高可靠应用需求,基于电容结构和肖特基接触模型,分析得出α-SiGe∶H膜退化前电流传输机制较好地符合热电子发射-扩散模型,并计算得到零偏α-SiGe∶H/TiW界面肖特基势垒高度为0.41 eV。通过实验发现,在电压应力作用下,α-SiGe∶H膜漏电随时间增大并逐渐饱和,且不同应力电压下对应饱和漏电大小及饱和点时间不同。分析应力下漏电增大与非晶网络弱键断裂造成的缺陷相关,漏电机制由初始的扩展态主导转变为由缺陷密度决定的局域态主导,漏电饱和归因于α-SiGe∶H膜中缺陷密度的饱和,采用近邻跳跃电导模型可以很好地拟合实测J-V曲线,并计算得到饱和缺陷密度为5×10^19 eV^-1·cm^-3。 展开更多
关键词 一次可编程(otp)存储器 α-SiGe∶H膜 肖特基接触 热电子发射-扩散模型 跳跃电导机制
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