InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy （ME）. Scanning electron microscopy observations show that the interface between the ...InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy （ME）. Scanning electron microscopy observations show that the interface between the epilayers and substrates is flat, indicating the good quality of the epilayers, and the thickness of the epilayers is 40 μm. Photoconductors were fabricated using InAs0.052Sb0.948 thick epilayers grown by ME. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10μm. The peak detectivity Dλp reached 5.4 × 10^9 cm-Hz^1/2.W^-1 for the immersed detectors. The detectivity D^＊ was 9.3 × 10^8 and 1.3 × 10^8 cm.Hz^1/2.W^-1 at the wavelength of 8 and 9 μm, respectively. The good performance of the uncooled InAsSb detectors was experimentally validated.展开更多
We present a scheme for the anti-control of chaos in the p-Ge photoconductor system by using a chaotic laser to irradiate and disturb this system. The numerical simulations show that this scheme can be effectively use...We present a scheme for the anti-control of chaos in the p-Ge photoconductor system by using a chaotic laser to irradiate and disturb this system. The numerical simulations show that this scheme can be effectively used to control periodic states in this t^Ge system into chaotic states. Moreover, the different chaos states with different chaotic orbits can be obtained by appropriately adjusting the disturbance intensity and disturbance frequency, and by increasing this intensity or reducing this frequency, this p-Ge system gradually evolves to fully developed chaotic states.展开更多
The chaotic behaviours in the p-Ge photoconductor system are studied by changing the photo-excitation coefficient and the routes and parameter conditions are given for chaos generation in this system. A scheme for con...The chaotic behaviours in the p-Ge photoconductor system are studied by changing the photo-excitation coefficient and the routes and parameter conditions are given for chaos generation in this system. A scheme for controlling chaos in the p-Ge photoconductor is presented by adding an ac bias current. Numerical simulations show that this scheme can be effectively used to control chaotic states into stable period states for this system. Moreover, the different period states with diifferent period numbers can be obtained by appropriately adjusting the amplitude, frequency, and initial phase of the additional ac current.展开更多
An AlN photoconductor for X-ray detection has been fabricated,and its response to X-ray irradiation intensity is studied.The photoconductor has a very low leakage current,less than 0.1 nA at an applied voltage of 100 ...An AlN photoconductor for X-ray detection has been fabricated,and its response to X-ray irradiation intensity is studied.The photoconductor has a very low leakage current,less than 0.1 nA at an applied voltage of 100 V in the absence of X-ray irradiation.The photocurrent measurement results clearly reveal that the photocurrent is proportional to the square root of the X-ray irradiation intensity,and under relatively high irradiation the photocurrent can reach values one order of magnitude larger than the dark current when a voltage of 100 V is applied across the AlN photoconductor.By using the ABC model the dependence of the photocurrent on the X-ray irradiation intensity is analyzed,and a reasonable interpretation of the physical mechanism is obtained.展开更多
A series of N, N′ dialkyl (and aryl) perylene 3,4:9, 10 bis (dicarboximide) compounds were prepared and purified, and their photoelectric properties as organic photoconductors were explored. It is found that N, N′...A series of N, N′ dialkyl (and aryl) perylene 3,4:9, 10 bis (dicarboximide) compounds were prepared and purified, and their photoelectric properties as organic photoconductors were explored. It is found that N, N′ dimethyl perylene 3,4:9, 10 bis (dicarboximide) and perylene 3,4:9,10 tetracarboxylic acid bisbenzimidazole show excellent photoconductivities, their charge acceptance reaches 700 V and 485 V, and the photosensitivity is 45 lx·s and 10 lx·s with dark decays 70 and 60 V/s respectively. The introduction of chlorine atoms can improve their photoelectric properties. SEM analyses also show that the dispersion of pigment in OPC could affect its photosensitivity.展开更多
基金financially supported by the National Natural Science Foundation of China (No. 60777022)the Fundamental Research Funds for the Central Universities
文摘InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy （ME）. Scanning electron microscopy observations show that the interface between the epilayers and substrates is flat, indicating the good quality of the epilayers, and the thickness of the epilayers is 40 μm. Photoconductors were fabricated using InAs0.052Sb0.948 thick epilayers grown by ME. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10μm. The peak detectivity Dλp reached 5.4 × 10^9 cm-Hz^1/2.W^-1 for the immersed detectors. The detectivity D^＊ was 9.3 × 10^8 and 1.3 × 10^8 cm.Hz^1/2.W^-1 at the wavelength of 8 and 9 μm, respectively. The good performance of the uncooled InAsSb detectors was experimentally validated.
文摘We present a scheme for the anti-control of chaos in the p-Ge photoconductor system by using a chaotic laser to irradiate and disturb this system. The numerical simulations show that this scheme can be effectively used to control periodic states in this t^Ge system into chaotic states. Moreover, the different chaos states with different chaotic orbits can be obtained by appropriately adjusting the disturbance intensity and disturbance frequency, and by increasing this intensity or reducing this frequency, this p-Ge system gradually evolves to fully developed chaotic states.
基金Project supported by Scientific and Technological Development Plan Program of Jilin Province,China (Grant No.20090309)
文摘The chaotic behaviours in the p-Ge photoconductor system are studied by changing the photo-excitation coefficient and the routes and parameter conditions are given for chaos generation in this system. A scheme for controlling chaos in the p-Ge photoconductor is presented by adding an ac bias current. Numerical simulations show that this scheme can be effectively used to control chaotic states into stable period states for this system. Moreover, the different period states with diifferent period numbers can be obtained by appropriately adjusting the amplitude, frequency, and initial phase of the additional ac current.
基金supported by the National Natural Science Foundation of China(Nos.51072196,51072195)
文摘An AlN photoconductor for X-ray detection has been fabricated,and its response to X-ray irradiation intensity is studied.The photoconductor has a very low leakage current,less than 0.1 nA at an applied voltage of 100 V in the absence of X-ray irradiation.The photocurrent measurement results clearly reveal that the photocurrent is proportional to the square root of the X-ray irradiation intensity,and under relatively high irradiation the photocurrent can reach values one order of magnitude larger than the dark current when a voltage of 100 V is applied across the AlN photoconductor.By using the ABC model the dependence of the photocurrent on the X-ray irradiation intensity is analyzed,and a reasonable interpretation of the physical mechanism is obtained.
文摘A series of N, N′ dialkyl (and aryl) perylene 3,4:9, 10 bis (dicarboximide) compounds were prepared and purified, and their photoelectric properties as organic photoconductors were explored. It is found that N, N′ dimethyl perylene 3,4:9, 10 bis (dicarboximide) and perylene 3,4:9,10 tetracarboxylic acid bisbenzimidazole show excellent photoconductivities, their charge acceptance reaches 700 V and 485 V, and the photosensitivity is 45 lx·s and 10 lx·s with dark decays 70 and 60 V/s respectively. The introduction of chlorine atoms can improve their photoelectric properties. SEM analyses also show that the dispersion of pigment in OPC could affect its photosensitivity.
